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WO2011136570A2 - Apparatus and method for manufacturing silicon nanopowder - Google Patents

Apparatus and method for manufacturing silicon nanopowder Download PDF

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Publication number
WO2011136570A2
WO2011136570A2 PCT/KR2011/003110 KR2011003110W WO2011136570A2 WO 2011136570 A2 WO2011136570 A2 WO 2011136570A2 KR 2011003110 W KR2011003110 W KR 2011003110W WO 2011136570 A2 WO2011136570 A2 WO 2011136570A2
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WIPO (PCT)
Prior art keywords
plasma
gas
silicon
antenna
baffle
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French (fr)
Korean (ko)
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WO2011136570A3 (en
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홍순일
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NEST CORP
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NEST CORP
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • B01J19/087—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy
    • B01J19/088—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy giving rise to electric discharges
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • B01J2219/0873—Materials to be treated
    • B01J2219/0875—Gas
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer

Definitions

  • Embodiments of the present invention relate to a silicon nanopowder manufacturing apparatus and method. More specifically, the present invention relates to a silicon nanopowder manufacturing apparatus and method for supplying as high power as possible in forming a nanopowder using plasma to facilitate plasma generation and to form high quality nanoparticles.
  • ICP inductive coupled plasma
  • CCP capacitive coupled plasma
  • MEMS micro-electromechanical system
  • the crystals since the crystals must be formed as small nanoparticles, when the particles bonded to the substrate through the plasma are combined with the grains before the crystals are formed, the nanoparticles cannot be easily formed when the grains become large.
  • Embodiment of the present invention is to supply a high power as possible in forming the nano-powder using the plasma to facilitate the generation of plasma and to form high-quality nanoparticles.
  • a silicon nano powder manufacturing apparatus comprising: a synthetic container having a space formed therein; A plasma gas inlet for introducing a plasma gas into the synthesis vessel; A plasma antenna for supplying power to make the plasma gas into a plasma; A plasma gas inlet for introducing a silicon process gas into the synthesis vessel; A baffle having a plurality of holes through which the decomposed particles pass after the silicon process gas is decomposed by the plasma; And a stage for fixing the substrate through which the particles passing through the baffle are bonded to each other to form crystalline particles.
  • the plasma gas may be an inert gas.
  • the silicon nano-powder manufacturing apparatus may further include a coalescence prevention gas inlet for introducing a coalescence prevention gas between the baffle and the stage.
  • the plasma antenna has a shape in which the synthetic container is wound in a ring shape
  • the silicon nanopowder manufacturing apparatus may further include an antenna moving part including a member for moving the plasma antenna up and down.
  • the plasma antenna may have a hollow tube shape to fill a coolant therein to be cooled, and both ends of the plasma antenna may be open upward to inject coolant.
  • the baffle may include a conductive material and may be grounded to the ground of a power source that supplies the plasma power.
  • the silicon nano-powder manufacturing method may further include an agglomeration preventing gas inflow step of introducing agglomeration preventing gas between the baffle and the stage.
  • the silicon nanopowder manufacturing method may further include moving the plasma antenna.
  • FIG. 1 is a view showing a silicon nano powder manufacturing apparatus according to an embodiment of the present invention.
  • FIG 2 is a diagram illustrating the plasma antenna 130 and the antenna moving unit 180.
  • FIG 3 is a diagram illustrating a case in which the refrigerant is filled in the plasma antenna 130.
  • FIG. 4 is a diagram illustrating the shape of the baffle 150.
  • FIG. 5 is a flowchart illustrating a method of manufacturing silicon nanopowder according to another embodiment of the present invention.
  • first, second, A, B, (a), and (b) may be used. These terms are only for distinguishing the components from other components, and the nature, order or order of the components are not limited by the terms. If a component is described as being “connected”, “coupled” or “connected” to another component, that component may be directly connected to or connected to that other component, but there may be another configuration between each component. It is to be understood that the elements may be “connected”, “coupled” or “connected”.
  • FIG. 1 is a view showing a silicon nano powder manufacturing apparatus according to an embodiment of the present invention.
  • the apparatus for manufacturing silicon nanopowder may include a synthetic container 110, a plasma gas inlet 120, a plasma antenna 130, a process gas inlet 140, and a baffle ( 150, a stage 160, agglomeration preventing gas inlet 170, an antenna moving unit 180, and a pump unit 190.
  • Synthetic container 110 is formed a space where the nano-powder is made inside.
  • the plasma gas inlet unit 120 introduces plasma gas into the synthesis vessel 110.
  • the plasma antenna 130 supplies power for making plasma gas introduced into the synthesis container 110 into plasma.
  • the process gas inlet 140 introduces the silicon process gas into the synthesis vessel 110.
  • the baffle 150 has a plurality of holes through which the decomposed particles pass after the silicon process gas is decomposed by the plasma.
  • the stage 160 has a substrate where particles passing through the baffle 150 are bonded to each other to form crystalline particles.
  • the aggregation preventing gas inlet 170 introduces the aggregation preventing gas between the baffle 150 and the stage 160.
  • the antenna moving unit 180 allows the plasma antenna 130 to move up and down.
  • the pump unit 190 adjusts the degree of vacuum inside the synthesis container 110.
  • Synthetic vessel 110 may be manufactured in the form of a tube so that a space in which the reaction is made to produce the nano-powder is formed.
  • the synthetic container 110 may be made of a material of quartz or ceramic, and may be made transparent so that the inside is visible.
  • the pump unit 190 may include two low vacuum pumps and a high vacuum pump to adjust the degree of vacuum of low or high vacuum according to working conditions. According to the embodiment, it may be configured only with a low vacuum pump.
  • the low vacuum pump may use a dry pump, and the high vacuum pump may use a turbo pump.
  • the plasma gas inlet unit 120 introduces a gas for plasma formation into the synthesis vessel 110.
  • An inert gas may be used as the gas for plasma, and argon (Ar), helium (He), krypton (Kr), xenon (Xe), or the like may be used.
  • Inflow of inert gas is about 100 sccm (Standard Cubic Centimeter per Minute) ⁇ 10,000sccm.
  • the plasma gas inlet 120 may be located on the upper surface of the synthesis vessel 110, but the present invention is not limited thereto.
  • the plasma antenna 130 supplies electric power to make the plasma gas introduced into the synthesis container 110 into plasma.
  • the plasma antenna 130 may have a shape in which the synthetic container 110 is wound in a ring shape as shown in FIG. 1.
  • an RF antenna is used as the plasma antenna 130 and plasma of an inert gas is generated by a force of a magnetic field or an electric field inside the synthesis vessel 110 induced by an applied RF power.
  • the internal pressure is controlled by the pump unit 190 and the pressure maintains 10mt ⁇ 10torr.
  • the supplied high frequency power can use 100W ⁇ 10KW.
  • FIG 2 is a diagram illustrating the plasma antenna 130 and the antenna moving unit 180.
  • the antenna moving unit 180 may be fixed to the synthesis container 110, and the plasma antenna 130 may be fixed by the antenna support unit.
  • the antenna support is coupled to the antenna moving part 180 to move up and down.
  • the antenna support part is provided with a tubular connection part while supporting the antenna to maintain the inserted shape with the antenna moving part 180, but the external force is increased by making enough friction force between the tubular connection part and the antenna moving part 180. Do not move unless it is applied.
  • a hole may be formed in the connecting portion and the plasma antenna 130 may be fixed by using a fastening chain in the portion.
  • the method of allowing the plasma antenna 130 to be coupled to the antenna moving unit 180 to move may be implemented in various ways.
  • FIG 3 is a diagram illustrating a case in which the refrigerant is filled in the plasma antenna 130.
  • the plasma antenna 130 may generate a lot of heat when applying RF power. There may be a problem in that a lot of power cannot be applied because heat is generated in the plasma antenna 130.
  • the plasma antenna 130 may have a hollow tube shape so that a refrigerant is filled therein to enable cooling.
  • both ends of the plasma antenna 130 may be open upward to inject the refrigerant, and any refrigerant may be used as a material used as a water-cooled refrigerant such as water.
  • a refrigerant pump (not shown) and a heat exchanger (not shown) are further provided to connect the refrigerant pump to one end of the plasma antenna 130, and then connect the refrigerant pump and the heat exchanger, and then heat exchange again. By connecting the other end of the plasma antenna 130 to circulate the refrigerant to circulate the refrigerant to maximize the cooling effect.
  • the process gas inlet unit 140 introduces the silicon process gas into the synthesis container 110.
  • Silane SiH 4
  • the flow rate of silane may be set to 1sccm ⁇ 1,000sccm.
  • the process gas inlet 140 and the plasma gas inlet 120 may be configured separately, but by forming an integrated gas inlet, the integrated gas inlet may be used for both inlet and plasma gas inlet.
  • the integrated case is illustrated.
  • FIG. 4 is a diagram illustrating the shape of the baffle 150.
  • the baffle 150 has a plurality of holes through which the decomposed particles pass after the silicon process gas is decomposed by the plasma. If the structure of the baffle 150 is absent, the area where the particles decomposed by the plasma descends increases, so that a thin film may be formed of particles decomposed by the plasma on the substrate (for example, a wafer) on the stage 160. Big. Therefore, a baffle 150 having a plurality of holes is used so that the thin film is not formed but is formed in powder form. The nanoparticles formed may reach the lower stage 160 through the baffle 150 having a hole having a uniform diameter of 3 mm to 10 mm.
  • the baffle 150 may include a conductive material and may be grounded with the ground of the power source for supplying plasma power.
  • grounding is performed by being connected to the ground acid of the RF power source, thereby preventing the plasma formed between the upper antenna regions from descending.
  • the intended process conditions may not be changed by initially fixing the position of the plasma antenna 130. Therefore, there is an effect of enabling high quality nano powder formation.
  • the silicon nanopowder manufacturing apparatus of the present invention may include an agglomeration preventing gas inlet 170 for introducing an agglomeration preventing gas between the baffle 150 and the stage 160.
  • an inert gas may be used, and the aggregation preventing gas may be introduced in a side direction in which particles decomposed by the plasma descend.
  • the agglomeration prevention gas serves to cool down the decomposition particles that are decomposed by the plasma. As such, by cooling the decomposition particles, the particles are prevented from sticking together before the crystals are formed to maintain the decomposition particles in a small state, thereby forming high quality nanopowders.
  • the stage 160 has a substrate where particles passing through the baffle 150 are bonded to each other to form crystalline particles.
  • the size of the nanoparticles formed in the substrate can be controlled by the ratio of the amount of the gas and the process gas flowing in.
  • the ratio of the amount of plasma gas and process gas may be set between 10: 1 and 10,000: 1.
  • the power can vary between 100W and 10,000W.
  • Si particles in which the process gas is decomposed by plasma may be bonded to each other to form crystalline particles having a lattice structure on the substrate.
  • the size of the crystalline particles formed may have a size of several nm to several hundred nm, which is called silicon nanoparticles (nano powder).
  • the in-situ clean can be performed using a gas containing NF 3 or other Flourine without exposing the synthetic vessel (reactor) to the outside.
  • the gas inflow is 10sccm ⁇ 1,000 sccm
  • the pressure is 10mt ⁇ 5torr
  • the power can be used 100W ⁇ 5,000W. It can also be mixed with an inert gas and used.
  • FIG. 5 is a flowchart illustrating a method of manufacturing silicon nanopowder according to another embodiment of the present invention.
  • Silicon nanopowder manufacturing method the step of introducing a plasma gas into the synthesis vessel (S502), the step of supplying power to make the plasma gas into a plasma using a plasma antenna (S504)
  • the silicon process gas is introduced into the synthesis vessel, in which the silicon process gas is decomposed by plasma (S508), and the decomposed particles pass through the holes of the baffle to form crystalline particles on the substrate ( S510) is made.
  • the anti-aggregation gas inflow step of introducing an anti-agglomeration gas between the baffle and the stage may be further included.
  • the method may further include a step of moving the plasma antenna before the gas for plasma is introduced.
  • Figure 7 is a photograph observing the formed nanoparticles with a transmission electron microscope.
  • the present invention is a useful invention for generating the nanopowder using plasma to generate the effect of supplying as high power as possible to facilitate the generation of plasma and the formation of high quality nanoparticles.

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Abstract

The present invention relates to an apparatus and method for manufacturing silicon nanopowder. The present invention relates to an apparatus and method for manufacturing silicon nanopowder, characterized in that the apparatus comprises: a synthesis container having a space therein; a plasma-gas-feeding part enabling plasma gas to be fed into the synthesis container; a plasma antenna supplying power in order to convert plasma gas into plasma; a plasma-gas-feeding part enabling silicon process gas to be fed into the synthesis container; a baffle having a plurality of apertures through which particles, produced by the decomposition of the silicon process gas by means of the plasma, pass; and a stage in which a substrate, on which crystalline particles are formed by combining the particles passing through the baffle, is fixed.

Description

실리콘 나노분말 제조장치 및 방법Silicon nano powder manufacturing apparatus and method

본 발명의 실시예는 실리콘 나노분말 제조장치 및 방법에 관한 것이다. 더욱 상세하게는, 플라즈마를 이용하여 나노분말을 형성함에 있어서 가능한 한 높은 전력을 공급하여 플라즈마의 발생을 원활히 하고 고품질의 나노입자가 형성될 수 있도록 하는 실리콘 나노분말 제조장치 및 방법에 관한 것이다.Embodiments of the present invention relate to a silicon nanopowder manufacturing apparatus and method. More specifically, the present invention relates to a silicon nanopowder manufacturing apparatus and method for supplying as high power as possible in forming a nanopowder using plasma to facilitate plasma generation and to form high quality nanoparticles.

일반적으로 유도 결합형 플라즈마(ICP: Inductive Coupled Plasma)와 용량 결합형 프라즈마(CCP: Capacitive Coupled Plasma)는 반도체, MEMS(Micro-Electro Mechanical System) 공정의 기능성 또는 내마모성 코팅과 같은 공정에 널리 쓰이는 기술이다.In general, inductive coupled plasma (ICP) and capacitive coupled plasma (CCP) are widely used in processes such as functional or wear-resistant coating of semiconductors and micro-electromechanical system (MEMS) processes. .

상기의 플라즈마를 실리콘 나노분말 결정을 생성하기 위한 공정에 적용함에 있어서 가능하면 주어진 조건 하에서 높은 전력을 제공하고 서브스트레이트 상에 박막이 형성되지 않고 나노분말을 형성할 수 있어야 한다.In applying the above plasma to a process for producing silicon nanopowder crystals, it should be possible to provide a high power under given conditions and to form nanopowders without forming a thin film on the substrate if possible.

그리고, 작은 나노입자로서 결정을 형성해야 하므로 플라즈마를 통하여 서브스트레이트로 결합되는 입자가 결정을 형성하기 전에 미리 알갱이끼리 결합되어 알갱이가 커진 상태가 되면 나노분말이 용이하게 형성할 수 없는 문제가 있다.In addition, since the crystals must be formed as small nanoparticles, when the particles bonded to the substrate through the plasma are combined with the grains before the crystals are formed, the nanoparticles cannot be easily formed when the grains become large.

또한 작업 조건에 따라 RF 전력을 공급하는 공급원의 안테나 위치가 고정되어 있어서 작업조건에 알맞게 조절할 수 없는 문제점이 있다.In addition, there is a problem in that the antenna position of the source for supplying the RF power is fixed according to the working conditions, so that it cannot be adjusted according to the working conditions.

본 발명의 실시예는 플라즈마를 이용하여 나노분말을 형성함에 있어서 가능한 한 높은 전력을 공급하여 플라즈마의 발생을 원활히 하고 고품질의 나노입자가 형성될 수 있도록 하고자 한다.Embodiment of the present invention is to supply a high power as possible in forming the nano-powder using the plasma to facilitate the generation of plasma and to form high-quality nanoparticles.

본 발명의 일 실시예에 따르면, 실리콘 나노분말 제조장치에 있어서, 내부에 공간이 형성된 합성용기; 플라즈마용 가스를 상기 합성용기 내부로 유입하는 플라즈마가스 유입부; 상기 플라즈마용 가스를 플라즈마로 만드는 전력을 공급하는 플라즈마 안테나; 실리콘 공정가스를 상기 합성용기 내부로 유입하는 플라즈마가스 유입부; 상기 실리콘 공정가스가 상기 플라즈마에 의해 분해된 후 분해된 입자가 통과되는 다수의 구멍을 구비한 배플; 및 상기 배플을 통과한 입자가 서로 결합하여 결정질 입자가 형성되는 서브스트레이트를 고정하는 스테이지를 포함하는 것을 특징으로 하는 실리콘 나노분말 제조장치를 제공한다.According to an embodiment of the present invention, a silicon nano powder manufacturing apparatus comprising: a synthetic container having a space formed therein; A plasma gas inlet for introducing a plasma gas into the synthesis vessel; A plasma antenna for supplying power to make the plasma gas into a plasma; A plasma gas inlet for introducing a silicon process gas into the synthesis vessel; A baffle having a plurality of holes through which the decomposed particles pass after the silicon process gas is decomposed by the plasma; And a stage for fixing the substrate through which the particles passing through the baffle are bonded to each other to form crystalline particles.

상기 플라즈마용 가스는 불활성 가스일 수 있다.The plasma gas may be an inert gas.

여기서, 상기 실리콘 나노분말 제조장치는, 상기 배플과 상기 스테이지 사이에 뭉침현상 방지 가스를 유입하는 뭉침방지 가스 유입부를 추가로 포함할 수 있다.Here, the silicon nano-powder manufacturing apparatus may further include a coalescence prevention gas inlet for introducing a coalescence prevention gas between the baffle and the stage.

상기 플라즈마 안테나는 상기 합성용기를 링 모양으로 감은 형태를 하며, 상기 실리콘 나노분말 제조장치는 상기 플라즈마 안테나를 위아래로 움직일 수 있도록 하는 부재를 구비한 안테나 이동부를 추가로 포함할 수 있다.The plasma antenna has a shape in which the synthetic container is wound in a ring shape, and the silicon nanopowder manufacturing apparatus may further include an antenna moving part including a member for moving the plasma antenna up and down.

상기 플라즈마 안테나는 냉각 가능하도록 내부에 냉매가 채워지도록 속이 비어있는 튜브형상을 하고 상기 플라즈마 안테나의 양끝단은 냉매를 주입할 수 있도록 위쪽을 향하여 개방되어 있을 수 있다.The plasma antenna may have a hollow tube shape to fill a coolant therein to be cooled, and both ends of the plasma antenna may be open upward to inject coolant.

상기 배플은 전도성 물질을 포함하고 상기 플라즈마 전력을 공급하는 전력원의 그라운드와 접지될 수 있다.The baffle may include a conductive material and may be grounded to the ground of a power source that supplies the plasma power.

본 발명의 다른 실시예에 따르면, 실리콘 나노분말 제조방법에 있어서, 플라즈마용 가스를 합성용기 내부로 유입하는 단계; 플라즈마 안테나를 이용하여 상기 플라즈마용 가스를 플라즈마로 만드는 전력을 공급하는 단계; 실리콘 공정가스가 상기 합성용기 내부로 유입되는 단계; 상기 실리콘 공정가스가 상기 플라즈마에 의해 분해되어 상기 분해된 입자가 배플의 구멍을 통과하여 서브스트레이트 상에서 결정질 입자를 형성하는 단계를 포함하는 것을 특징으로 하는 실리콘 나노분말 제조방법을 제공한다.According to another embodiment of the invention, in the silicon nano powder manufacturing method, the step of introducing a gas for plasma into the synthesis vessel; Supplying power to make the plasma gas into a plasma by using a plasma antenna; Introducing a silicon process gas into the synthesis vessel; The silicon process gas is decomposed by the plasma to provide the silicon nano-powder manufacturing method comprising the step of forming the crystalline particles on the substrate through the decomposed particles through the holes of the baffle.

여기서, 상기 실리콘 나노분말 제조방법은, 상기 배플과 상기 스테이지 사이에 뭉침현상 방지 가스를 유입하는 뭉침방지 가스 유입단계를 추가로 포함할 수 있다.Here, the silicon nano-powder manufacturing method may further include an agglomeration preventing gas inflow step of introducing agglomeration preventing gas between the baffle and the stage.

또한, 상기 실리콘 나노분말 제조방법은, 상기 플라즈마 안테나를 움직이는 단계를 추가로 포함할 수 있다.In addition, the silicon nanopowder manufacturing method may further include moving the plasma antenna.

본 발명에 의하면, 플라즈마를 이용하여 나노분말을 형성함에 있어서 가능한 한 높은 전력을 공급하여 플라즈마의 발생을 원활히 하고 고품질의 나노입자가 형성될 수 있도록 하는 효과가 있다.According to the present invention, there is an effect of supplying as high power as possible to form nanopowders using plasma to facilitate the generation of plasma and to form high quality nanoparticles.

도 1은 본 발명의 일 실시예에 따른 실리콘 나노분말 제조장치를 도시한 도면이다.1 is a view showing a silicon nano powder manufacturing apparatus according to an embodiment of the present invention.

도 2는 플라즈마 안테나(130) 및 안테나 이동부(180)를 도시한 도면이다.2 is a diagram illustrating the plasma antenna 130 and the antenna moving unit 180.

도 3은 플라즈마 안테나(130)에 냉매를 채울 수 있도록 만든 경우를 도시한 도면이다.3 is a diagram illustrating a case in which the refrigerant is filled in the plasma antenna 130.

도 4는 배플(150)의 형상을 예시한 도면이다.4 is a diagram illustrating the shape of the baffle 150.

도 5는 본 발명의 다른 실시예에 따른 실리콘 나노분말 제조방법을 도시한 흐름도이다.5 is a flowchart illustrating a method of manufacturing silicon nanopowder according to another embodiment of the present invention.

도 6은 형성된 나노파티클을 주사전자현미경으로 관찰한 사진이다.6 is a photograph observing the formed nanoparticles with a scanning electron microscope.

도 7은 형성된 나노파티클을 투과전자현미경으로 관찰한 사진이다.7 is a photograph of the formed nanoparticles observed with a transmission electron microscope.

이하, 본 발명의 일부 실시예들을 예시적인 도면을 통해 상세하게 설명한다. 각 도면의 구성요소들에 참조부호를 부가함에 있어서, 동일한 구성요소들에 대해서는 비록 다른 도면상에 표시되더라도 가능한 한 동일한 부호를 가지도록 하고 있음에 유의해야 한다. 또한, 본 발명의 실시예를 설명함에 있어, 관련된 공지 구성 또는 기능에 대한 구체적인 설명이 본 발명의 요지를 흐릴 수 있다고 판단되는 경우에는 그 상세한 설명은 생략한다.Hereinafter, some embodiments of the present invention will be described in detail through exemplary drawings. In adding reference numerals to the components of each drawing, it should be noted that the same reference numerals are assigned to the same components as much as possible even though they are shown in different drawings. In describing the embodiments of the present invention, when it is determined that the detailed description of the related well-known configuration or function may obscure the gist of the present invention, the detailed description thereof will be omitted.

또한, 본 발명의 실시예의 구성 요소를 설명하는 데 있어서, 제 1, 제 2, A, B, (a), (b) 등의 용어를 사용할 수 있다. 이러한 용어는 그 구성 요소를 다른 구성 요소와 구별하기 위한 것일 뿐, 그 용어에 의해 해당 구성 요소의 본질이나 차례 또는 순서 등이 한정되지 않는다. 어떤 구성 요소가 다른 구성요소에 "연결", "결합" 또는 "접속"된다고 기재된 경우, 그 구성 요소는 그 다른 구성요소에 직접적으로 연결되거나 또는 접속될 수 있지만, 각 구성 요소 사이에 또 다른 구성 요소가 "연결", "결합" 또는 "접속"될 수도 있다고 이해되어야 할 것이다.In addition, in describing the components of the embodiment of the present invention, terms such as first, second, A, B, (a), and (b) may be used. These terms are only for distinguishing the components from other components, and the nature, order or order of the components are not limited by the terms. If a component is described as being "connected", "coupled" or "connected" to another component, that component may be directly connected to or connected to that other component, but there may be another configuration between each component. It is to be understood that the elements may be "connected", "coupled" or "connected".

도 1은 본 발명의 일 실시예에 따른 실리콘 나노분말 제조장치를 도시한 도면이다.1 is a view showing a silicon nano powder manufacturing apparatus according to an embodiment of the present invention.

도 1에 도시하듯이 본 발명의 일 실시예에 따른 실리콘 나노분말 제조장치는 합성용기(110), 플라즈마가스 유입부(120), 플라즈마 안테나(130), 공정가스 유입부(140), 배플(150), 스테이지(160), 뭉침방지 가스 유입부(170), 안테나 이동부(180) 및 펌프부(190)를 포함한다.As shown in FIG. 1, the apparatus for manufacturing silicon nanopowder according to an exemplary embodiment of the present invention may include a synthetic container 110, a plasma gas inlet 120, a plasma antenna 130, a process gas inlet 140, and a baffle ( 150, a stage 160, agglomeration preventing gas inlet 170, an antenna moving unit 180, and a pump unit 190.

합성용기(110)는 내부에 나노분말이 제조가 이루어지는 공간이 형성된다.Synthetic container 110 is formed a space where the nano-powder is made inside.

플라즈마가스 유입부(120)는 플라즈마용 가스를 합성용기(110) 내부로 유입한다. The plasma gas inlet unit 120 introduces plasma gas into the synthesis vessel 110.

플라즈마 안테나(130)는 합성용기(110)의 내부에 유입된 플라즈마용 가스를 플라즈마로 만드는 전력을 공급한다.The plasma antenna 130 supplies power for making plasma gas introduced into the synthesis container 110 into plasma.

공정가스 유입부(140)는 실리콘 공정가스를 합성용기(110) 내부로 유입시킨다.The process gas inlet 140 introduces the silicon process gas into the synthesis vessel 110.

배플(150)은 실리콘 공정가스가 플라즈마에 의해 분해된 후 분해된 입자가 통과되는 다수의 구멍을 구비한다.The baffle 150 has a plurality of holes through which the decomposed particles pass after the silicon process gas is decomposed by the plasma.

스테이지(160)는 배플(150)을 통과한 입자가 서로 결합하여 결정질이 형성되는 서브스트레이트가 위치한다.The stage 160 has a substrate where particles passing through the baffle 150 are bonded to each other to form crystalline particles.

뭉침방지 가스 유입부(170)는 배플(150)과 스테이지(160) 사이에 뭉침현상 방지 가스를 유입한다.The aggregation preventing gas inlet 170 introduces the aggregation preventing gas between the baffle 150 and the stage 160.

안테나 이동부(180)는 플라즈마 안테나(130)를 위아래로 움직일 수 있도록 한다.The antenna moving unit 180 allows the plasma antenna 130 to move up and down.

펌프부(190)는 합성용기(110) 내부의 진공 정도를 조절한다.The pump unit 190 adjusts the degree of vacuum inside the synthesis container 110.

도 1을 참조하면서 일 실시예에 따른 실리콘 나노분말 제조장치를 상세히 설명한다.Referring to Figure 1 will be described in detail a silicon nanopowder manufacturing apparatus according to an embodiment.

합성용기(110)는 내부에 나노분말의 제조가 이루어지는 반응이 발생하는 공간이 형성되도록 튜브형태로 제작될 수 있다. 또, 합성용기(110)는 석영(Quartz)이나 세라믹의 재질로 만들 수 있으며, 내부가 들여다보이도록 투명하게 만들 수 있다.Synthetic vessel 110 may be manufactured in the form of a tube so that a space in which the reaction is made to produce the nano-powder is formed. In addition, the synthetic container 110 may be made of a material of quartz or ceramic, and may be made transparent so that the inside is visible.

합성용기(110)는 펌프부(190)를 이용하여 내부를 진공상태로 만든다. 펌프부(190)는 저진공펌프 및 고진공펌프 두가지를 구비하여 작업 조건에 따라 저진공 또는 고진공의 진공 정도를 조절하도록 할 수 있다. 실시예에 따라서는 저진공펌프만으로 구성할 수도 있다.Synthetic container 110 to make a vacuum inside the pump unit 190. The pump unit 190 may include two low vacuum pumps and a high vacuum pump to adjust the degree of vacuum of low or high vacuum according to working conditions. According to the embodiment, it may be configured only with a low vacuum pump.

저진공펌프로는 드라이펌프(Dry Pump)를 사용할 수 있으며, 고진공펌프로는 터보펌프(Turbo Pump)를 사용할 수 있다.The low vacuum pump may use a dry pump, and the high vacuum pump may use a turbo pump.

플라즈마가스 유입부(120)는 플라즈마 형성을 위한 가스를 합성용기(110) 내부로 유입한다. 플라즈마용 가스로는 불활성 가스가 사용될 수 있으며, 아르곤(Ar), 헬륨(He), 크립톤(Kr), 제논(Xe) 등을 사용할 수 있다. 불활성 가스의 유입량은 약 100sccm(Standard Cubic Centimeter per Minute) ~ 10,000sccm이 되도록 한다.The plasma gas inlet unit 120 introduces a gas for plasma formation into the synthesis vessel 110. An inert gas may be used as the gas for plasma, and argon (Ar), helium (He), krypton (Kr), xenon (Xe), or the like may be used. Inflow of inert gas is about 100 sccm (Standard Cubic Centimeter per Minute) ~ 10,000sccm.

한편, 플라즈마가스 유입부(120)의 위치는 합성용기(110)의 상부면에 위치할 수 있으나 본 발명이 이에 한정되지는 않는다.On the other hand, the plasma gas inlet 120 may be located on the upper surface of the synthesis vessel 110, but the present invention is not limited thereto.

플라즈마 안테나(130)는 합성용기(110) 내부에 유입된 플라즈마용 가스를 플라즈마로 만드는 전력을 공급한다. 플라즈마 안테나(130)는 도 1에 도시된 바와 같이 합성용기(110)를 링 모양으로 감은 형태를 할 수 있다.The plasma antenna 130 supplies electric power to make the plasma gas introduced into the synthesis container 110 into plasma. The plasma antenna 130 may have a shape in which the synthetic container 110 is wound in a ring shape as shown in FIG. 1.

본 실시예에서는 플라즈마 안테나(130)로 RF안테나를 사용하며 인가된 RF 전력에 의해 유도된 합성용기(110) 내부의 자기장 또는 전기장의 힘에 의하여 불활성 가스의 플라즈마가 발생한다. 이때 내부 압력은 펌프부(190)에 의하여 조절되며 그 압력은 10mt~10torr을 유지한다. 공급되는 고주파 전력은 100W ~ 10KW를 사용할 수 있다.In this embodiment, an RF antenna is used as the plasma antenna 130 and plasma of an inert gas is generated by a force of a magnetic field or an electric field inside the synthesis vessel 110 induced by an applied RF power. At this time, the internal pressure is controlled by the pump unit 190 and the pressure maintains 10mt ~ 10torr. The supplied high frequency power can use 100W ~ 10KW.

도 2는 플라즈마 안테나(130) 및 안테나 이동부(180)를 도시한 도면이다.2 is a diagram illustrating the plasma antenna 130 and the antenna moving unit 180.

안테나 이동부(180)는 합성용기(110)에 고정될 수 있으며, 플라즈마 안테나(130)는 안테나 지지부에 의해 고정될 수 있다. 안테나 지지부는 안테나 이동부(180)에 결합되어 위아래로 움직일 수 있도록 한다.The antenna moving unit 180 may be fixed to the synthesis container 110, and the plasma antenna 130 may be fixed by the antenna support unit. The antenna support is coupled to the antenna moving part 180 to move up and down.

안테나 지지부는 안테나를 지지하면서 관형태의 연결부를 구비하여 안테나 이동부(180)와 삽입된 형태를 유지하되, 관형태의 연결부와 안테나 이동부(180) 사이에는 마찰력이 충분하도록 만들어서 외부의 힘이 가해지지 않는 한 움직이지 않도록 한다. 플라즈마 안테나(130)를 안테나 이동부(180)에 고정하는 방법은 연결부에 구멍을 뚫고 그 부분에 조임쇄를 이용하여 플라즈마 안테나(130)를 고정하도록 할 수도 있다. 플라즈마 안테나(130)를 안테나 이동부(180)에 결합하여 움직일 수 있도록 하는 방법은 이외에도 다양한 방법으로 구현할 수 있다.The antenna support part is provided with a tubular connection part while supporting the antenna to maintain the inserted shape with the antenna moving part 180, but the external force is increased by making enough friction force between the tubular connection part and the antenna moving part 180. Do not move unless it is applied. In the method of fixing the plasma antenna 130 to the antenna moving unit 180, a hole may be formed in the connecting portion and the plasma antenna 130 may be fixed by using a fastening chain in the portion. The method of allowing the plasma antenna 130 to be coupled to the antenna moving unit 180 to move may be implemented in various ways.

도 3은 플라즈마 안테나(130)에 냉매를 채울 수 있도록 만든 경우를 도시한 도면이다.3 is a diagram illustrating a case in which the refrigerant is filled in the plasma antenna 130.

플라즈마 안테나(130)는 RF 전력을 인가하는 경우 많은 열을 발생할 수 있다. 플라즈마 안테나(130)에 열이 발생함으로 인하여 많은 전력을 인가하지 못하는 문제가 있을 수 있다.The plasma antenna 130 may generate a lot of heat when applying RF power. There may be a problem in that a lot of power cannot be applied because heat is generated in the plasma antenna 130.

도 3에 도시하듯이, 플라즈마 안테나(130)는 냉각 가능하도록 내부에 냉매가 채워지도록 속이 비어있는 튜브형상을 할 수 있다. 또한, 플라즈마 안테나(130)의 양끝단은 냉매를 주입할 수 있도록 위쪽을 향하여 개방되어 있을 수 있으며, 냉매로는 물과 같은 수냉식 냉매로 쓰이는 물질이면 어느 것이나 가능하다. 또한, 냉각효과를 극대화하기 위해 냉매펌프(미도시) 및 열교환기(미도시)를 추가로 구비하여 플라즈마 안테나(130)의 한쪽 끝단에 냉매펌프를 연결하고 냉매펌프와 열교환기를 연결한 후 다시 열교환기를 플라즈마 안테나(130)의 다른쪽 끝단을 연결함으로써 냉매를 순환시켜 냉매를 순환하도록 하여 냉각효과를 극대화할 수 있다.As shown in FIG. 3, the plasma antenna 130 may have a hollow tube shape so that a refrigerant is filled therein to enable cooling. In addition, both ends of the plasma antenna 130 may be open upward to inject the refrigerant, and any refrigerant may be used as a material used as a water-cooled refrigerant such as water. In addition, in order to maximize the cooling effect, a refrigerant pump (not shown) and a heat exchanger (not shown) are further provided to connect the refrigerant pump to one end of the plasma antenna 130, and then connect the refrigerant pump and the heat exchanger, and then heat exchange again. By connecting the other end of the plasma antenna 130 to circulate the refrigerant to circulate the refrigerant to maximize the cooling effect.

공정가스 유입부(140)는 실리콘 공정가스를 합성용기(110) 내부로 유입시킨다. 유입되는 공정가스로는 실란(SiH4)가 사용될 수 있다. 이때 실란의 유입량은 1sccm ~ 1,000sccm으로 설정할 수 있다.The process gas inlet unit 140 introduces the silicon process gas into the synthesis container 110. Silane (SiH 4 ) may be used as the incoming process gas. At this time, the flow rate of silane may be set to 1sccm ~ 1,000sccm.

한편, 공정가스 유입부(140)와 플라즈마가스 유입부(120)는 별개로 구성될 수도 있지만 일체화된 가스유입부를 구성하여 일체화된 가스유입부가 유입 및 플라즈마 가스 유입 두가지 목적 모두에 사용될 수 있으며, 본 실시예에서는 일체화된 경우를 예시하였다.On the other hand, the process gas inlet 140 and the plasma gas inlet 120 may be configured separately, but by forming an integrated gas inlet, the integrated gas inlet may be used for both inlet and plasma gas inlet. In the embodiment, the integrated case is illustrated.

도 4는 배플(150)의 형상을 예시한 도면이다.4 is a diagram illustrating the shape of the baffle 150.

도 4에 도시한 바와 같이, 배플(150)은 실리콘 공정가스가 플라즈마에 의해 분해된 후 분해된 입자가 통과되는 다수의 구멍을 구비한다. 배플(150)의 구조가 없으면 플라즈마에 의해 분해된 입자가 내려오는 영역이 넓어짐에 따라 스테이지(160) 상의 서브스트레이트(예를 들어, 웨이퍼)에 플라즈마에 의해 분해된 입자로 박막이 형성될 소지가 크다. 따라서, 박막이 형성되지 않고 분말형태로 형성되도록 다수의 구멍을 구비하는 배플(150)을 사용한다. 형성되는 나노 파티클은 3mm ~ 10mm 규격의 균일한 직경을 가지는 구멍이 형성된 배플(150)을 통하여 하부의 스테이지(160)에 도달할 수 있다. As shown in FIG. 4, the baffle 150 has a plurality of holes through which the decomposed particles pass after the silicon process gas is decomposed by the plasma. If the structure of the baffle 150 is absent, the area where the particles decomposed by the plasma descends increases, so that a thin film may be formed of particles decomposed by the plasma on the substrate (for example, a wafer) on the stage 160. Big. Therefore, a baffle 150 having a plurality of holes is used so that the thin film is not formed but is formed in powder form. The nanoparticles formed may reach the lower stage 160 through the baffle 150 having a hole having a uniform diameter of 3 mm to 10 mm.

한편, 배플(150)은 전도성 물질을 포함하여 만들 수 있으며, 플라즈마 전력을 공급하는 전력원의 그라운드와 접지되도록 할 수 있다.Meanwhile, the baffle 150 may include a conductive material and may be grounded with the ground of the power source for supplying plasma power.

도 1에 도시한 바와 같이 RF 전력원의 접지산과 연결되도록 함으로써 접지하며, 이로 인하여 상부의 안테나 영역 사이에 형성된 플라즈마가 아래로 내려오지 않도록 할 수 있다. 이와 같이 함으로써 당초에 플라즈마 안테나(130)의 위치를 고정함으로써 의도한 공정조건이 변화되지 않을 수 있다. 따라서, 고품질의 나노 분말 형성을 가능하게 하는 효과가 있다.As shown in FIG. 1, grounding is performed by being connected to the ground acid of the RF power source, thereby preventing the plasma formed between the upper antenna regions from descending. In this manner, the intended process conditions may not be changed by initially fixing the position of the plasma antenna 130. Therefore, there is an effect of enabling high quality nano powder formation.

본 발명의 실리콘 나노분말 제조장치는 배플(150)과 스테이지(160) 사이에 뭉침현상 방지 가스를 유입하는 뭉침방지 가스 유입부(170)를 포함할 수 있다.The silicon nanopowder manufacturing apparatus of the present invention may include an agglomeration preventing gas inlet 170 for introducing an agglomeration preventing gas between the baffle 150 and the stage 160.

뭉침현상 방지 가스는 불활성 가스를 사용할 수 있으며, 플라즈마에 의해 분해된 입자가 내려오는 옆 방향으로 뭉침현상 방지 가스가 유입될 수 있다. 뭉침현상 방지 가스는 플라즈마에 의해 분해되어 내려오는 분해입자를 식혀주는 역할을 한다. 이와 같이 분해입자를 식혀줌으로써 결정을 형성하기 전에 알갱이끼리 달라붙는 것을 방지하여 분해입자가 작은 상태를 유지하도록 해주어 고품질의 나노분말을 형성할 수 있도록 하는 효과가 있다.As the aggregation preventing gas, an inert gas may be used, and the aggregation preventing gas may be introduced in a side direction in which particles decomposed by the plasma descend. The agglomeration prevention gas serves to cool down the decomposition particles that are decomposed by the plasma. As such, by cooling the decomposition particles, the particles are prevented from sticking together before the crystals are formed to maintain the decomposition particles in a small state, thereby forming high quality nanopowders.

스테이지(160)는 배플(150)을 통과한 입자가 서로 결합하여 결정질이 형성되는 서브스트레이트가 위치한다. 서브스트레이트에 형성되는 나노입자의 크기는 유입되는 플라즈마용 가스와 공정가스의 양의 비율로 조절할 수 있다. 플라즈마용 가스와 공정가스의 양의 비율은 10:1 ~ 10,000:1 사이에서 정해질 수 있다. 전력은 100W ~ 10,000W 사이에서 가변될 수 있다.The stage 160 has a substrate where particles passing through the baffle 150 are bonded to each other to form crystalline particles. The size of the nanoparticles formed in the substrate can be controlled by the ratio of the amount of the gas and the process gas flowing in. The ratio of the amount of plasma gas and process gas may be set between 10: 1 and 10,000: 1. The power can vary between 100W and 10,000W.

한편, 공정가스가 플라즈마에 의해 분해된 Si 입자들이 서로 결합하여 격자구조를 갖는 결정질 입자를 서브스트레이트 상에 형성될 수 있다. 형성되는 결정질 입자의 크기는 수 nm ~ 수백 nm 의 크기를 가질 수 있으며, 이를 실리콘 나노파티클(나노분말)이라 한다.Meanwhile, Si particles in which the process gas is decomposed by plasma may be bonded to each other to form crystalline particles having a lattice structure on the substrate. The size of the crystalline particles formed may have a size of several nm to several hundred nm, which is called silicon nanoparticles (nano powder).

나노 파티클 공정 진행 후에 합성용기(리액터)를 외부에 노출시키지 않고도 NF3나 다른 Flourine을 포함한 가스를 이용하여 인슈트 세정(In-situ clean)을 수행할 수 있다. 이때 가스 유입량은 10sccm ~ 1,000 sccm 이고 압력은 10mt ~ 5torr 이며, 전력은 100W ~ 5,000W를 사용할 수 있다. 불활성 가스와 혼합하여 사용할 수도 있다.After the nanoparticle process, the in-situ clean can be performed using a gas containing NF 3 or other Flourine without exposing the synthetic vessel (reactor) to the outside. At this time, the gas inflow is 10sccm ~ 1,000 sccm, the pressure is 10mt ~ 5torr, the power can be used 100W ~ 5,000W. It can also be mixed with an inert gas and used.

도 5는 본 발명의 다른 실시예에 따른 실리콘 나노분말 제조방법을 도시한 흐름도이다.5 is a flowchart illustrating a method of manufacturing silicon nanopowder according to another embodiment of the present invention.

본 발명의 다른 실시예에 따른 실리콘 나노분말 제조방법을 도 1 내지 도 5를 함께 참조하면서 설명한다.The silicon nanopowder manufacturing method according to another embodiment of the present invention will be described with reference to FIGS. 1 to 5.

본 발명의 다른 실시예에 따른 실리콘 나노분말 제조방법은, 플라즈마용 가스를 합성용기 내부로 유입하는 단계(S502), 플라즈마 안테나를 이용하여 플라즈마용 가스를 플라즈마로 만드는 전력을 공급하는 단계(S504), 실리콘 공정가스가 합성용기 내부로 유입되는 단계(S506), 실리콘 공정가스가 플라즈마에 의해 분해되는 단계(S508), 분해된 입자가 배플의 구멍을 통과하여 서브스트레이트 상에서 결정질 입자를 형성하는 단계(S510)를 포함하여 이루어진다.Silicon nanopowder manufacturing method according to another embodiment of the present invention, the step of introducing a plasma gas into the synthesis vessel (S502), the step of supplying power to make the plasma gas into a plasma using a plasma antenna (S504) In step S506, the silicon process gas is introduced into the synthesis vessel, in which the silicon process gas is decomposed by plasma (S508), and the decomposed particles pass through the holes of the baffle to form crystalline particles on the substrate ( S510) is made.

본 발명의 다른 실시예에 따른 실리콘 나노분말 제조방법에서 배플과 스테이지 사이에 뭉침현상 방지 가스를 유입하는 뭉침방지 가스 유입단계를 추가로 포함할 수 있다.In the silicon nanopowder manufacturing method according to another embodiment of the present invention, the anti-aggregation gas inflow step of introducing an anti-agglomeration gas between the baffle and the stage may be further included.

또한, 본 발명의 다른 실시예에 따른 실리콘 나노분말 제조방법에서 플라즈마용 가스 유입 전에 플라즈마 안테나를 움직이는 단계를 추가로 포함할 수 있다.In addition, in the method of manufacturing silicon nanopowder according to another embodiment of the present invention, the method may further include a step of moving the plasma antenna before the gas for plasma is introduced.

도 6은 형성된 나노파티클을 주사전자현미경으로 관찰한 사진이고, 도 7은 형성된 나노파티클을 투과전자현미경으로 관찰한 사진이다.6 is a photograph observing the formed nanoparticles with a scanning electron microscope, Figure 7 is a photograph observing the formed nanoparticles with a transmission electron microscope.

이상에서, 본 발명의 실시예를 구성하는 모든 구성 요소들이 하나로 결합되거나 결합되어 동작하는 것으로 설명되었다고 해서, 본 발명이 반드시 이러한 실시예에 한정되는 것은 아니다. 즉, 그 모든 구성 요소들이 하나 이상으로 선택적으로 결합하여 동작할 수도 있다.In the above description, all elements constituting the embodiments of the present invention are described as being combined or operating in combination, but the present invention is not necessarily limited to the embodiments. That is, all of the components may operate selectively in combination with one or more of them.

또한, 이상에서 기재된 "포함하다", "구성하다" 또는 "가지다" 등의 용어는, 이와 명시적으로 상반되는 기재가 없는 한, 해당 구성 요소가 내재될 수 있음을 의미하는 것이므로, 다른 구성 요소를 제외하는 것이 아니라 다른 구성 요소를 더 포함할 수 있는 것으로 해석되어야 한다. 기술적이거나 과학적인 용어를 포함한 모든 용어들은, 다르게 정의되지 않는 한, 본 발명이 속하는 기술 분야에서 통상의 지식을 가진 자에 의해 일반적으로 이해되는 것과 동일한 의미를 가진다. 사전에 정의된 용어와 같이 일반적으로 사용되는 용어들은 관련 기술의 문맥 상의 의미와 일치하는 것으로 해석되어야 하며, 본 발명에서 명백하게 정의하지 않는 한, 이상적이거나 과도하게 형식적인 의미로 해석되지 않는다.In addition, the terms "comprise", "comprise", or "having" described above mean that the corresponding component may be embedded unless otherwise stated, and thus, other components. It should be construed that it may further include other components rather than to exclude them. All terms, including technical and scientific terms, have the same meanings as commonly understood by one of ordinary skill in the art unless otherwise defined. Terms commonly used, such as terms defined in a dictionary, should be interpreted to coincide with the contextual meaning of the related art, and shall not be construed in an ideal or excessively formal sense unless explicitly defined in the present invention.

이상의 설명은 본 발명의 기술 사상을 예시적으로 설명한 것에 불과한 것으로서, 본 발명이 속하는 기술 분야에서 통상의 지식을 가진 자라면 본 발명의 본질적인 특성에서 벗어나지 않는 범위에서 다양한 수정 및 변형이 가능할 것이다. 따라서, 본 발명에 개시된 실시예들은 본 발명의 기술 사상을 한정하기 위한 것이 아니라 설명하기 위한 것이고, 이러한 실시예에 의하여 본 발명의 기술 사상의 범위가 한정되는 것은 아니다. 본 발명의 보호 범위는 아래의 청구범위에 의하여 해석되어야 하며, 그와 동등한 범위 내에 있는 모든 기술 사상은 본 발명의 권리범위에 포함되는 것으로 해석되어야 할 것이다.The above description is merely illustrative of the technical idea of the present invention, and those skilled in the art to which the present invention pertains may make various modifications and changes without departing from the essential characteristics of the present invention. Therefore, the embodiments disclosed in the present invention are not intended to limit the technical idea of the present invention but to describe the present invention, and the scope of the technical idea of the present invention is not limited by these embodiments. The protection scope of the present invention should be interpreted by the following claims, and all technical ideas within the equivalent scope should be interpreted as being included in the scope of the present invention.

이상에서 설명한 바와 같이 본 발명은 플라즈마를 이용하여 나노분말을 형성함에 있어서 가능한 한 높은 전력을 공급하여 플라즈마의 발생을 원활히 하고 고품질의 나노입자가 형성될 수 있도록 하는 효과를 발생하는 유용한 발명이다.As described above, the present invention is a useful invention for generating the nanopowder using plasma to generate the effect of supplying as high power as possible to facilitate the generation of plasma and the formation of high quality nanoparticles.

CROSS-REFERENCE TO RELATED APPLICATIONCROSS-REFERENCE TO RELATED APPLICATION

본 특허출원은 2010년 4월 30일에 한국에 출원한 특허출원번호 제10-2010-0041089호에 대해 미국 특허법 119(a)조(35 U.S.C § 119(a))에 따라 우선권을 주장하면, 그 모든 내용은 참고문헌으로 본 특허출원에 병합된다. 아울러, 본 특허출원은 미국 이외에 국가에 대해서도 위와 동일한 동일한 이유로 우선권을 주장하면 그 모든 내용은 참고문헌으로 본 특허출원에 병합된다. This patent application claims priority under No. 119 (a) (35 USC § 119 (a)) of the US Patent Act No. 10-2010-0041089 filed with Korea on April 30, 2010. All of which is incorporated herein by reference. In addition, if this patent application claims priority for the same reason as above for a country other than the United States, all the contents thereof are incorporated into this patent application by reference.

Claims (9)

실리콘 나노분말 제조장치에 있어서,In the silicon nano powder manufacturing apparatus, 내부에 공간이 형성된 합성용기;A synthetic container having a space formed therein; 플라즈마용 가스를 상기 합성용기 내부로 유입하는 플라즈마가스 유입부;A plasma gas inlet for introducing a plasma gas into the synthesis vessel; 상기 플라즈마용 가스를 플라즈마로 만드는 전력을 공급하는 플라즈마 안테나;A plasma antenna for supplying power to make the plasma gas into a plasma; 실리콘 공정가스를 상기 합성용기 내부로 유입하는 플라즈마가스 유입부;A plasma gas inlet for introducing a silicon process gas into the synthesis vessel; 상기 실리콘 공정가스가 상기 플라즈마에 의해 분해된 후 분해된 입자가 통과되는 다수의 구멍을 구비한 배플; 및A baffle having a plurality of holes through which the decomposed particles pass after the silicon process gas is decomposed by the plasma; And 상기 배플을 통과한 입자가 서로 결합하여 결정질 입자가 형성되는 서브스트레이트를 고정하는 스테이지The stage that the particles passing through the baffle are bonded to each other to fix the substrate to form crystalline particles 를 포함하는 것을 특징으로 하는 실리콘 나노분말 제조장치.Silicon nano powder manufacturing apparatus comprising a. 제1항에 있어서,The method of claim 1, 상기 플라즈마용 가스는 불활성 가스인 것을 특징으로 하는 실리콘 나노분말 제조장치.The plasma gas is a silicon nano powder manufacturing apparatus, characterized in that the inert gas. 제1항에 있어서,The method of claim 1, 상기 실리콘 나노분말 제조장치는, 상기 배플과 상기 스테이지 사이에 뭉침현상 방지 가스를 유입하는 뭉침방지 가스 유입부를 추가로 포함하는 것을 특징으로 하는 실리콘 나노분말 제조장치.The silicon nano-powder manufacturing apparatus, silicon nano-powder manufacturing apparatus further comprises an agglomeration preventing gas inlet for introducing agglomeration preventing gas between the baffle and the stage. 제1항에 있어서,The method of claim 1, 상기 플라즈마 안테나는 상기 합성용기를 링 모양으로 감은 형태를 하며,The plasma antenna has a form in which the synthetic container is wound in a ring shape, 상기 실리콘 나노분말 제조장치는 상기 플라즈마 안테나를 위아래로 움직일 수 있도록 하는 부재를 구비한 안테나 이동부를 추가로 포함하는 것을 특징으로 하는 실리콘 나노분말 제조장치.The silicon nano powder manufacturing apparatus further comprises an antenna moving unit having a member for moving the plasma antenna up and down. 제1항에 있어서,The method of claim 1, 상기 플라즈마 안테나는, 냉각 가능하도록 내부에 냉매가 채워지도록 속이 비어있는 튜브형상을 하고 상기 플라즈마 안테나의 양끝단은 냉매를 주입할 수 있도록 위쪽을 향하여 개방되어 있는 것을 특징으로 하는 실리콘 나노분말 제조장치.The plasma antenna is a silicon nano-powder manufacturing apparatus, characterized in that the hollow tube shape so that the refrigerant is filled in the inside to be cooled, and both ends of the plasma antenna is opened upward to inject the refrigerant. 제1항에 있어서,The method of claim 1, 상기 배플은 전도성 물질을 포함하고 상기 플라즈마 전력을 공급하는 전력원의 그라운드와 접지되는 것을 특징으로 하는 실리콘 나노분말 제조장치.The baffle comprises a conductive material and the silicon nanopowder manufacturing apparatus, characterized in that the ground and ground of the power source for supplying the plasma power. 실리콘 나노분말 제조방법에 있어서,In the silicon nano powder manufacturing method, 플라즈마용 가스를 합성용기 내부로 유입하는 단계;Introducing a plasma gas into the synthesis vessel; 플라즈마 안테나를 이용하여 상기 플라즈마용 가스를 플라즈마로 만드는 전력을 공급하는 단계;Supplying power to make the plasma gas into a plasma by using a plasma antenna; 실리콘 공정가스가 상기 합성용기 내부로 유입되는 단계;Introducing a silicon process gas into the synthesis vessel; 상기 실리콘 공정가스가 상기 플라즈마에 의해 분해되어 상기 분해된 입자가 배플의 구멍을 통과하여 서브스트레이트 상에서 결정질 입자를 형성하는 단계The silicon process gas is decomposed by the plasma so that the decomposed particles pass through holes in the baffle to form crystalline particles on the substrate. 를 포함하는 것을 특징으로 하는 실리콘 나노분말 제조방법.Silicon nano powder manufacturing method comprising a. 제7항에 있어서,The method of claim 7, wherein 상기 실리콘 나노분말 제조방법은, 상기 배플과 상기 스테이지 사이에 뭉침현상 방지 가스를 유입하는 뭉침방지 가스 유입단계를 추가로 포함하는 것을 특징으로 하는 실리콘 나노분말 제조방법.The silicon nanopowder manufacturing method may further include an agglomeration preventing gas inflow step of introducing agglomeration preventing gas between the baffle and the stage. 제7항에 있어서,The method of claim 7, wherein 상기 실리콘 나노분말 제조방법은, 상기 플라즈마 안테나를 움직이는 단계를 추가로 포함하는 것을 특징으로 하는 실리콘 나노분말 제조방법.The silicon nanopowder manufacturing method further comprises the step of moving the plasma antenna silicon nanopowder manufacturing method, characterized in that.
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