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WO2011046347A3 - 식각 마스크 패턴 형성용 페이스트 및 이를 이용한 태양전지의 제조방법 - Google Patents

식각 마스크 패턴 형성용 페이스트 및 이를 이용한 태양전지의 제조방법 Download PDF

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Publication number
WO2011046347A3
WO2011046347A3 PCT/KR2010/006970 KR2010006970W WO2011046347A3 WO 2011046347 A3 WO2011046347 A3 WO 2011046347A3 KR 2010006970 W KR2010006970 W KR 2010006970W WO 2011046347 A3 WO2011046347 A3 WO 2011046347A3
Authority
WO
WIPO (PCT)
Prior art keywords
forming
mask pattern
etching mask
solar cell
paste
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2010/006970
Other languages
English (en)
French (fr)
Other versions
WO2011046347A2 (ko
Inventor
김민서
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LG Chem Ltd
Original Assignee
LG Chem Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by LG Chem Ltd filed Critical LG Chem Ltd
Priority to US13/501,686 priority Critical patent/US9660128B2/en
Priority to EP10823586.2A priority patent/EP2489703B1/en
Priority to JP2012534106A priority patent/JP5884243B2/ja
Priority to CN201080055944.9A priority patent/CN102648245B/zh
Publication of WO2011046347A2 publication Critical patent/WO2011046347A2/ko
Publication of WO2011046347A3 publication Critical patent/WO2011046347A3/ko
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D5/00—Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects produced; Filling pastes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41M—PRINTING, DUPLICATING, MARKING, OR COPYING PROCESSES; COLOUR PRINTING
    • B41M1/00—Inking and printing with a printer's forme
    • B41M1/12—Stencil printing; Silk-screen printing
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D7/00—Features of coating compositions, not provided for in group C09D5/00; Processes for incorporating ingredients in coating compositions
    • C09D7/40—Additives
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

본 발명은 식각 마스크 패턴 형성용 페이스트 및 이를 이용한 실리콘 태양전지의 제조방법을 개시한다. 본 발명의 식각 마스크 패턴 형성용 페이스트 조성물은 실리콘 태양전지의 선택적 에미터 제조에 사용되며, 무기물 분말, 유기 용매, 바인더 수지, 및 가소제를 포함하는 것을 특징으로 한다. 본 발명의 페이스트 조성물로 형성된 식각 마스크 패턴은 기판과의 접착력이 우수하여 에지-컬(edge-curl) 현상을 방지할 수 있고 그에 따라 선택적 에미터 형성을 위한 에치-백 공정에서 에칭에 견디는 성능이 우수하여 안정적인 에미터 형성을 가능하게 한다.
PCT/KR2010/006970 2009-10-13 2010-10-12 식각 마스크 패턴 형성용 페이스트 및 이를 이용한 태양전지의 제조방법 Ceased WO2011046347A2 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US13/501,686 US9660128B2 (en) 2009-10-13 2010-10-12 Paste for preparing mask patterns and manufacturing method of solar cell using the same
EP10823586.2A EP2489703B1 (en) 2009-10-13 2010-10-12 Method for manufacturing a solar cell using a paste for forming an etching mask pattern
JP2012534106A JP5884243B2 (ja) 2009-10-13 2010-10-12 太陽電池の製造方法
CN201080055944.9A CN102648245B (zh) 2009-10-13 2010-10-12 用于制备掩模图案的糊剂和使用该糊剂制备太阳能电池的方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020090097297A KR101206250B1 (ko) 2009-10-13 2009-10-13 식각 마스크 패턴 형성용 페이스트 및 이의 스크린 인쇄법을 이용한 실리콘 태양전지의 제조방법
KR10-2009-0097297 2009-10-13

Publications (2)

Publication Number Publication Date
WO2011046347A2 WO2011046347A2 (ko) 2011-04-21
WO2011046347A3 true WO2011046347A3 (ko) 2011-09-09

Family

ID=43876691

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2010/006970 Ceased WO2011046347A2 (ko) 2009-10-13 2010-10-12 식각 마스크 패턴 형성용 페이스트 및 이를 이용한 태양전지의 제조방법

Country Status (7)

Country Link
US (1) US9660128B2 (ko)
EP (1) EP2489703B1 (ko)
JP (1) JP5884243B2 (ko)
KR (1) KR101206250B1 (ko)
CN (1) CN102648245B (ko)
TW (1) TWI431078B (ko)
WO (1) WO2011046347A2 (ko)

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JP6243898B2 (ja) 2012-04-19 2017-12-06 インテヴァック インコーポレイテッド 太陽電池製造のための２重マスク装置
KR101487578B1 (ko) * 2012-04-25 2015-01-29 주식회사 엘지화학 태양전지용 잉크 조성물 및 이를 이용한 태양전지 제조방법
SG11201406893XA (en) 2012-04-26 2014-11-27 Intevac Inc System architecture for vacuum processing
US10062600B2 (en) 2012-04-26 2018-08-28 Intevac, Inc. System and method for bi-facial processing of substrates
CN106688088B (zh) 2014-08-05 2020-01-10 因特瓦克公司 注入掩膜及对齐
KR102133174B1 (ko) * 2019-01-21 2020-07-14 한밭대학교 산학협력단 태양전지 및 이의 제조 방법
ES3044087T3 (en) * 2019-12-18 2025-11-26 Lg Energy Solution Ltd Method of manufacturing an electrode using an inorganic layer coating tape therefor
CN114937714B (zh) * 2022-06-14 2024-05-03 西安理工大学 大动态响应范围紫外光电探测器及其制作方法

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Also Published As

Publication number Publication date
JP2013507785A (ja) 2013-03-04
EP2489703B1 (en) 2018-07-25
CN102648245A (zh) 2012-08-22
EP2489703A2 (en) 2012-08-22
EP2489703A4 (en) 2017-03-22
TWI431078B (zh) 2014-03-21
CN102648245B (zh) 2016-04-13
WO2011046347A2 (ko) 2011-04-21
US20130034928A1 (en) 2013-02-07
JP5884243B2 (ja) 2016-03-15
TW201130929A (en) 2011-09-16
KR101206250B1 (ko) 2012-11-28
KR20110040141A (ko) 2011-04-20
US9660128B2 (en) 2017-05-23

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