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WO2010041850A3 - 전자빔 후처리를 이용한 투명성 산화 전극 제조 방법 - Google Patents

전자빔 후처리를 이용한 투명성 산화 전극 제조 방법 Download PDF

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Publication number
WO2010041850A3
WO2010041850A3 PCT/KR2009/005676 KR2009005676W WO2010041850A3 WO 2010041850 A3 WO2010041850 A3 WO 2010041850A3 KR 2009005676 W KR2009005676 W KR 2009005676W WO 2010041850 A3 WO2010041850 A3 WO 2010041850A3
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WO
WIPO (PCT)
Prior art keywords
transparent anode
manufacturing
electron beam
treatment
present
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2009/005676
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English (en)
French (fr)
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WO2010041850A2 (ko
WO2010041850A9 (ko
Inventor
김용환
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INFOVION CO Ltd
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INFOVION CO Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by INFOVION CO Ltd filed Critical INFOVION CO Ltd
Priority to US13/122,964 priority Critical patent/US20110195196A1/en
Publication of WO2010041850A2 publication Critical patent/WO2010041850A2/ko
Publication of WO2010041850A9 publication Critical patent/WO2010041850A9/ko
Publication of WO2010041850A3 publication Critical patent/WO2010041850A3/ko
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/004—Details
    • H01G9/04—Electrodes or formation of dielectric layers thereon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/46—Sputtering by ion beam produced by an external ion source
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5806—Thermal treatment
    • C23C14/582—Thermal treatment using electron bombardment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/138—Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing Of Electric Cables (AREA)
  • Physical Vapour Deposition (AREA)
  • Electroluminescent Light Sources (AREA)
  • Treatments Of Macromolecular Shaped Articles (AREA)

Abstract

본 발명은 전자빔 후처리를 이용한 투명성 산화 전극 제조 방법에 관한 것이다. 상기 투명성 산화 전극 제조 방법은, (a) 기판상에 투명성 산화 전극용 박막을 형성하는 단계; 및 (b) 상기 투명성 산화 전극용 박막의 표면에 전자빔을 조사하는 단계;를 구비하며, (a) 단계이후 추가의 열처리 공정을 수행하지 않는 것을 특징으로 한다. 본 발명에 따른 투명성 산화 전극 제조 방법은 후처리로서 고온의 열처리 공정을 수행하지 않고 저온의 전자빔 조사 공정을 수행함으로써, 유리, 파이렉스, 석영 뿐 만 아니라 기판이 열에 약한 폴리머 재질인 경우에도 특성이 우수한 투명성 산화 전극을 제조할 수 있게 된다.
PCT/KR2009/005676 2008-10-06 2009-10-05 전자빔 후처리를 이용한 투명성 산화 전극 제조 방법 Ceased WO2010041850A2 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US13/122,964 US20110195196A1 (en) 2008-10-06 2009-10-05 Method for manufacturing transparent oxide electrode using electron beam post-treatment

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020080097530A KR101025932B1 (ko) 2008-10-06 2008-10-06 전자빔 후처리를 이용한 투명성 산화 전극 제조 방법
KR10-2008-0097530 2008-10-06

Publications (3)

Publication Number Publication Date
WO2010041850A2 WO2010041850A2 (ko) 2010-04-15
WO2010041850A9 WO2010041850A9 (ko) 2010-06-10
WO2010041850A3 true WO2010041850A3 (ko) 2010-07-29

Family

ID=42101071

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2009/005676 Ceased WO2010041850A2 (ko) 2008-10-06 2009-10-05 전자빔 후처리를 이용한 투명성 산화 전극 제조 방법

Country Status (3)

Country Link
US (1) US20110195196A1 (ko)
KR (1) KR101025932B1 (ko)
WO (1) WO2010041850A2 (ko)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120107996A1 (en) * 2010-10-30 2012-05-03 Applied Materials, Inc. Surface treatment process performed on a transparent conductive oxide layer for solar cell applications
KR101300791B1 (ko) * 2011-12-15 2013-08-29 한국생산기술연구원 전자빔 조사를 이용한 몰리브덴 박막의 전도도 향상 방법
CN102651455B (zh) * 2012-02-28 2015-11-25 京东方科技集团股份有限公司 Oled器件、amoled器件及其制造方法
US8764515B2 (en) * 2012-05-14 2014-07-01 United Technologies Corporation Component machining method and assembly
KR101960378B1 (ko) * 2012-07-09 2019-07-16 엘지디스플레이 주식회사 증착 장비
KR101359403B1 (ko) * 2012-07-16 2014-02-11 순천대학교 산학협력단 투명전도막 형성 방법
KR101966336B1 (ko) * 2012-07-27 2019-04-05 동우 화인켐 주식회사 터치패널 및 이를 포함하는 유기발광 표시장치
CN103579380A (zh) 2012-08-09 2014-02-12 索尼公司 受光或者发光元件、太阳能电池、光传感器、发光二极管
KR101501338B1 (ko) * 2013-02-04 2015-03-16 스마트전자 주식회사 서지흡수기 제조방법
TW201503326A (zh) * 2013-07-05 2015-01-16 Hon Hai Prec Ind Co Ltd 具有觸控功能的發光顯示器
KR20150014058A (ko) * 2013-07-29 2015-02-06 한국생산기술연구원 태양전지용 실리콘 기판 및 이의 제조방법
US9856578B2 (en) * 2013-09-18 2018-01-02 Solar-Tectic, Llc Methods of producing large grain or single crystal films
US9771650B2 (en) * 2015-09-08 2017-09-26 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Method for modifying a TCO coating
CN106756812B (zh) * 2016-11-10 2019-02-26 武汉大学 一种P型SnO2薄膜的制备方法
US10544505B2 (en) * 2017-03-24 2020-01-28 Applied Materials, Inc. Deposition or treatment of diamond-like carbon in a plasma reactor
KR102149352B1 (ko) * 2018-12-18 2020-08-31 한국세라믹기술원 선택적 전자빔 처리를 이용한 박막 트랜지스터의 제조 방법
US11664214B2 (en) 2020-06-29 2023-05-30 Applied Materials, Inc. Methods for producing high-density, nitrogen-doped carbon films for hardmasks and other patterning applications
US11664226B2 (en) 2020-06-29 2023-05-30 Applied Materials, Inc. Methods for producing high-density carbon films for hardmasks and other patterning applications
CN113221401B (zh) * 2021-04-15 2024-01-23 西安电子科技大学 高功率微波及重离子注入的空间太阳能电池的分析方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20000033894A (ko) * 1998-11-26 2000-06-15 윤종용 반도체 장치의 보호층 형성방법
KR100374894B1 (ko) * 2000-06-22 2003-03-06 이영춘 이온빔 보조 전자빔 진공증착기를 이용하여 수지계기판에투명 아이티오 도전박막을 형성하는 방법
KR20050109846A (ko) * 2004-05-17 2005-11-22 주식회사 케이티 투명 전극용 박막 제조 방법 및 그 박막 제조를 위한 타겟
KR100676420B1 (ko) * 2003-06-20 2007-01-31 어플라이드 매터리얼스 게엠베하 운트 컴퍼니 카게 기판 상에 평탄한 ｉｔｏ 층을 제조하는 방법, ｉｔｏ 코팅 기판 및 유기발광다이오드

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3970892A (en) * 1975-05-19 1976-07-20 Hughes Aircraft Company Ion plasma electron gun
JPH0545645U (ja) * 1991-11-27 1993-06-18 シヤープ株式会社 プラスチツク液晶表示素子
JPH06140650A (ja) * 1992-09-14 1994-05-20 Sanyo Electric Co Ltd 透光性導電酸化膜の改質方法とこれを用いた光起電力装置の製造方法
US5504133A (en) * 1993-10-05 1996-04-02 Mitsubishi Materials Corporation Composition for forming conductive films
JPH11354820A (ja) * 1998-06-12 1999-12-24 Sharp Corp 光電変換素子及びその製造方法
JP2000016839A (ja) * 1998-07-02 2000-01-18 Toppan Printing Co Ltd 透明導電性酸化物薄膜の形成方法及びこの装置
JP2004053784A (ja) * 2002-07-18 2004-02-19 Sharp Corp 液晶表示装置およびその製造方法
US20050025901A1 (en) * 2003-07-31 2005-02-03 Kerluke David R. Method of curing coatings on automotive bodies using high energy electron beam or X-ray
KR20070050143A (ko) * 2005-11-10 2007-05-15 주식회사 인포비온 투명성 산화 전극 제조 방법
KR101251134B1 (ko) * 2007-01-18 2013-04-04 주식회사 엘지화학 투명 도전 산화막, 이의 제조방법, 인듐-주석 복합 산화물,및 소결체

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20000033894A (ko) * 1998-11-26 2000-06-15 윤종용 반도체 장치의 보호층 형성방법
KR100374894B1 (ko) * 2000-06-22 2003-03-06 이영춘 이온빔 보조 전자빔 진공증착기를 이용하여 수지계기판에투명 아이티오 도전박막을 형성하는 방법
KR100676420B1 (ko) * 2003-06-20 2007-01-31 어플라이드 매터리얼스 게엠베하 운트 컴퍼니 카게 기판 상에 평탄한 ｉｔｏ 층을 제조하는 방법, ｉｔｏ 코팅 기판 및 유기발광다이오드
KR20050109846A (ko) * 2004-05-17 2005-11-22 주식회사 케이티 투명 전극용 박막 제조 방법 및 그 박막 제조를 위한 타겟

Also Published As

Publication number Publication date
WO2010041850A2 (ko) 2010-04-15
KR20100038520A (ko) 2010-04-15
US20110195196A1 (en) 2011-08-11
WO2010041850A9 (ko) 2010-06-10
KR101025932B1 (ko) 2011-03-30

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