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WO2009157727A2 - Composition de pâte conductrice et procédé de préparation d'une électrode utilisant cette composition - Google Patents

Composition de pâte conductrice et procédé de préparation d'une électrode utilisant cette composition Download PDF

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Publication number
WO2009157727A2
WO2009157727A2 PCT/KR2009/003444 KR2009003444W WO2009157727A2 WO 2009157727 A2 WO2009157727 A2 WO 2009157727A2 KR 2009003444 W KR2009003444 W KR 2009003444W WO 2009157727 A2 WO2009157727 A2 WO 2009157727A2
Authority
WO
WIPO (PCT)
Prior art keywords
conductive paste
paste composition
electrode
composition
binder resin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2009/003444
Other languages
English (en)
Other versions
WO2009157727A3 (fr
Inventor
Hwa Joong Kim
Tae Hyun Jun
Ha Chul Song
Eun Kyoung Ryu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SSCP Co Ltd
Original Assignee
SSCP Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SSCP Co Ltd filed Critical SSCP Co Ltd
Priority to CN2009801240419A priority Critical patent/CN102077301A/zh
Publication of WO2009157727A2 publication Critical patent/WO2009157727A2/fr
Publication of WO2009157727A3 publication Critical patent/WO2009157727A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20—Conductive material dispersed in non-conductive organic material
    • H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/14—Conductive material dispersed in non-conductive inorganic material
    • H01B1/16—Conductive material dispersed in non-conductive inorganic material the conductive material comprising metals or alloys
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/138—Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • H10F77/315—Coatings for devices having potential barriers for photovoltaic cells the coatings being antireflective or having enhancing optical properties
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Definitions

  • the present invention relates to a conductive paste composition useful in preparing an electrode of a solar cell.
  • a solar cell has a p-type semiconductor-n-type semiconductor junction, and its basic structure is the same as that of a diode.
  • the incident light absorbed by the solar cell creates negatively charged electrons and positively charged holes created by the removal electrons which function to generate electric power.
  • a semiconductor may be an n-type semiconductor attracting negatively charged electrons or a p-type semiconductor attracting positively charged holes.
  • the negative charges generated in the semiconductor are attracted toward the n- type semiconductor, and the positive charges, toward the p-type semiconductor. These charges are collected at the respective electrodes, and when a wire is connected to the electrodes, an electrical circuit is formed and an electric current is generated.
  • a crystalline silicon solar cell is generally classified into a single crystal silicon solar cell and a polycrystalline silicon solar cell, and typically contains a p-n homojunction.
  • a single crystal has a high purity and a low crystal defect density, and is capable of achieving a high cell conversion efficiency, although it is expensive. Meanwhile, a relatively inexpensive polycrystalline material is used when the conversion efficiency is high enough for commercialization and provides a low cost solar cell.
  • a single crystal silicon solar cell is known to exhibit a conversion efficiency of about 24% in the absence of a collector and a conversion efficiency of 28% or more hi the presence of a collector, while a polycrystalline silicon solar cell shows a conversion efficiency of about 18%.
  • the theoretically achievable efficiencies of the single crystal and the polycrystalline material are about 35% and 19%, respectively.
  • the electrode paste composition used in the fabrication of the electrode of a conventional solar cell is problematic because the aspect ratio may greatly change during the course of heat-drying the printed electrode paste at 150 to 250 °C for 1 to 2 min and heat-treating at 750 ° C for tens of sec, which reduces the light-receiving region, leading to deteriorated cell conversion efficiency.
  • a conductive paste composition which is capable of preventing the deformation of the printed film during drying and heat-treating. It is another object of the present invention to provide a method for preparing an electrode using the conductive paste composition.
  • a conductive paste composition comprising a binder resin, a diluent, a conductive metal material, glass frit, and an inorganic thixotrophic agent.
  • a method for preparing an electrode using the conductive paste composition which comprises the steps of: printing the conductive paste composition on a substrate; drying the printed conductive paste thus obtained; and heat-treating the dried conductive paste.
  • a solar cell comprising the electrode prepared in the above method as a surface electrode.
  • FIG. 1 shows a schematic view of a solar cell.
  • the conductive paste composition according to the present invention comprises a binder resin, a diluent, a conductive metal material, glass frit, and an inorganic thixotrophic agent.
  • the composition comprises 1 to 10 wt% of the binder resin, 5 to 25 wt% of the diluent, 60 to 90 wt% of the conductive metal material, 1 to 10 wt% of the glass frit, and 0.1 to 5 wt% of the inorganic thixotrophic agent.
  • the composition of the present invention may further comprise 0.1 to 5 parts by weight of a dispersant based on the total weight of the composition.
  • the binder resin is a cellulose-based compound having a viscosity of 5 to 500 cps (5 wt% solvent in an 8:2 mixture of toluene and ethanol), or an acrylic resin-based compound having a molecular weight of 5,000 to 50,000.
  • the binder resin may be selected from the group consisting of a cellulose-based compound such as cellulose acetate, cellulose acetate butyrate, ethyl cellulose, methyl cellulose, hydroxypropyl cellulose, hydroxyethyl cellulose, hydroxypropylmethyl cellulose and hydroxyethylmethyl cellulose, an acrylic compound such as polyacrylamide, polymethacrylate, polymethylmethacrylate and polyethylmethacrylate, a vinylic compound such as polyvinylbutyral, polyvinylacetate and polyvinylalcohol, and a mixture thereof.
  • a cellulose-based compound such as cellulose acetate, cellulose acetate butyrate, ethyl cellulose, methyl cellulose, hydroxypropyl cellulose, hydroxyethyl cellulose, hydroxypropylmethyl cellulose and hydroxyethylmethyl cellulose
  • an acrylic compound such as polyacrylamide, polymethacrylate, polymethylmethacrylate and polyeth
  • the diluent used in the composition according to the present invention may be selected from the group consisting of ⁇ -terpineol, texanol, dioctyl phthalate, dibutyl phthalate, cyclohexane, hexane, toluene, benzylalcohol, dioxane, diethyleneglycol, ethyleneglycol monobutyl ether, ethyleneglycol monobutyl ether acetate, diethyleneglycol monobutyl ether, diethyleneglycol monobutyl ether acetate, and a mixture thereof.
  • the inorganic thixotrophic agent used in the composition is bentonite or silica and is preferably Aerosil (available from DEGUSSA, Germany).
  • composition according to the present invention containing 0.1 to 5 wt% of the inorganic thixotrophic agent changes in aspect ratio are small before and after a heat-treating process, thereby preventing the deformation of the io printed film upon preparing of an electrode.
  • the conductive metal material used in the present invention may include a silver powder, a copper powder, a nickel powder, or an aluminum powder.
  • the silver powder is prefered. Below, the conductive metal material exemplified by silver powder is described for convenience.
  • the shape of the silver powder may include at least one selected from the group consisting of a spherical shape, an acicular shape, a planar shape, and an amorphous shape.
  • the average particle size of the silver powder may be 0.5 to 5 ⁇ m in consideration of ease of pasting and of density thereof upon heat-treating.
  • the silver powder may be contained in an amount of 60 to 90 wt% in
  • the conductive paste composition in consideration of the thickness and line resistance of the electrode formed upon printing.
  • the glass frit used in the present invention may have an average particle size of 0.5 to 5 ⁇ m, and the component thereof may include at least one selected from the group consisting of 43 to 91 wt% of PbO, 21 wt% or less of SiO 2 , 25
  • the glass frit may have a glass softening temperature of 320 to 520 0 C and a coefficient of thermal expansion of 62 to 110 x 10 "7 /°C .
  • the amount of glass frit may be set to 1 to 10 wt% based on the total weight of the conductive paste
  • the amount of glass frit is smaller than 1 wt%, incomplete heat- treating occurs, undesirably increasing electric resistivity. In contrast, if the amount thereof is greater than 10 wt%, the glass component is excessively increased in the heat-treated silver powder body, undesirably increasing electric resistivity.
  • composition according to the present invention may further include an additive typically known in the art, as necessary.
  • the additive may include at least one selected from the group consisting of a photosensitizer, a polymerization inhibitor, a defoaming agent, a leveling agent and an organic thixotrophic agent.
  • the conductive paste composition according to the present invention may be employed for preparing a surface electrode of a solar cell.
  • a method of preparing an electrode using the inventive conductive paste composition comprises the steps of: printing the conductive paste composition on a substrate; drying the printed conductive paste thus obtained; and heat-treating the dried conductive paste.
  • the electrode according to the present invention may have a thickness of 10 to 40 ⁇ in.
  • the electrode paste printed (or patterned) using the inventive conductive paste composition may be dried at a temperature of 150 to 250 ° C for ones of min, and then heat-treated at a temperature of 700 to 900 ° C for ones of sec.
  • the conductive paste composition according to the present invention may be printed on the substrate using any printing process selected from the group consisting of screen printing, gravure offset printing, rotary screen printing, and lift off printing.
  • the electrode prepared using the inventive conductive paste composition can be usefully employed as the surface electrode of the solar cell.
  • FIG. 1 schematically shows the solar cell.
  • the silicon substrate may include polycrystalline silicon or single crystal silicon.
  • a p-n junction is formed in the vicinity of a light-receiving surface.
  • the substrate In the formation of the p-n junction, the substrate may be a p-type and the light-receiving surface side may be an n-type due to diffusion, or conversely the substrate may be an n-type and the light- receiving surface side may be a p-type.
  • an anti-reflective layer is formed on the light-receiving surface through chemical vapor deposition (CVD).
  • the anti-reflective layer may be formed of titanium oxide, silicon dioxide, or silicon nitride. Particularly useful is silicon nitride because of its high device stability.
  • the anti-reflective layer may be used as a passivation layer.
  • the thickness of the anti-reflective layer may be about 50 to 100 nm.
  • a back electrode formed on the backside of the silicon substrate is prepared by applying a conductive metal material such as aluminum and then drying it.
  • the conductive paste according to the present invention may be utilized to form the surface electrode on the surface of the anti-reflective layer.
  • the pattern of the surface electrode is formed and then dried, after which the surface electrode and the back electrode are simultaneously heat-treated.
  • Examples of the shape of the pattern of the surface electrode may include parallel lines and lattices.
  • the solar cell fabricated using the composition according to the present invention may have an additional element for improving cell performance.
  • a welding layer may be formed on the surface of the surface electrode.
  • the surface electrode formed using the conductive paste according to the present invention has an aspect ratio (height/width) of 0.3 or more. Hence, when such a surface electrode is included in the solar cell, the solar cell can increase its light-receiving area to 93% or above.
  • the conductive paste according to the present invention is heat-treated, line resistance is reduced, so that electromotive force generated by light incidence can be efficiently used as current.
  • ethylcellulose Ethocel Std 100, available from DOW CHEMICAL 5 USA
  • Texanol available from EASTMAN
  • DOP dioctyl phthalate
  • the viscosity was measured at a shear rate of 10 s "1 using a viscometer (RVl, available from HAKKE) and a Ti 35 spindle. Furthermore, the viscosity was measured at a shear rate of each of 1 s “1 and 10 s "1 , and then, a viscosity ratio represented by viscosity measured at 1 s ' Vviscosity measured at 10 s "1 , called the thixo index, was determined.
  • Printability for a width of 100 ⁇ m was confirmed using a 325 mesh screen. Printing was performed at a squeegee rate of 40 cm/min using a screen printer, thereafter drying at 150 0 C was performed. Subsequently, heat-treating was performed in a heat-treating furnace (available from SIEREATHERM) at a maximum of 750 0 C , the printed shape was observed, and an aspect ratio (AJR) was determined. Upon heat-treating, the extent of the deformation of the film could be seen by comparing changes in aspect ratio before and after the heat- treating process.
  • the conductive paste of Examples 1 to 7 had small changes in aspect ratio before and after the heat-treating process, thus reducing the deformation of the printed film.
  • the composition of the comparative examples had large changes in aspect ratio, thus increasing the deformation of the printed film.
  • both the aspect ratio (0.313) before the heat-treating process and the aspect ratio (0.284) after the heat-treating process were improved.
  • the aspect ratio was improved in this way, the light-receiving area was increased and line resistance was reduced.
  • the present invention provides a conductive paste composition and a method of preparing an electrode using the same.
  • the conductive paste composition for preparing an electrode can prevent the deformation of the printed film upon heat-drying and heat-treating after printing thereof. Therefore, when a surface electrode formed using the inventive conductive paste composition according to the present invention is included in a solar cell, the solar cell can have an enlarged light- receiving area and high photoelectric conversion efficiency.

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  • Chemical & Material Sciences (AREA)
  • Dispersion Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Inorganic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Conductive Materials (AREA)

Abstract

L'invention concerne une composition de pâte conductrice comprenant une résine liante, un diluant, un matériau métallique conducteur, une fritte de verre et un agent thixotrophique inorganique, servant à la préparation d'une électrode d'une cellule solaire et empêchant la déformation d'une électrode après un processus de traitement thermique, augmentant ainsi une région de réception de lumière et une efficacité de conversion photoélectrique.
PCT/KR2009/003444 2008-06-25 2009-06-25 Composition de pâte conductrice et procédé de préparation d'une électrode utilisant cette composition Ceased WO2009157727A2 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2009801240419A CN102077301A (zh) 2008-06-25 2009-06-25 导电膏组合物及使用该导电膏组合物的电极制造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2008-0060275 2008-06-25
KR1020080060275A KR20100000685A (ko) 2008-06-25 2008-06-25 전도성 페이스트 조성물 및 이를 이용한 전극 제조방법

Publications (2)

Publication Number Publication Date
WO2009157727A2 true WO2009157727A2 (fr) 2009-12-30
WO2009157727A3 WO2009157727A3 (fr) 2010-04-15

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Country Link
KR (1) KR20100000685A (fr)
CN (1) CN102077301A (fr)
WO (1) WO2009157727A2 (fr)

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CN102194898A (zh) * 2010-03-15 2011-09-21 常州天合光能有限公司 太阳能电池用导电镍浆
US20150364622A1 (en) * 2013-03-27 2015-12-17 Cheil Industries Inc. Composition for forming solar cell electrode and electrode produced from same
WO2016007351A1 (fr) * 2014-07-11 2016-01-14 E. I. Du Pont De Nemours And Company Compositions fluides durcissant a basse temperature pour former des trajets thermiquement conducteurs dans des applications de type electronique, et procedes correspondants
JP2016533019A (ja) * 2013-09-13 2016-10-20 チェイル インダストリーズ インコーポレイテッド 太陽電池電極形成用組成物及びこれによって製造された電極
JP2016213440A (ja) * 2015-04-28 2016-12-15 三星エスディアイ株式会社Samsung SDI Co., Ltd. 電極形成用組成物ならびに当該組成物を用いて製造される電極および太陽電池
WO2016202841A1 (fr) 2015-06-17 2016-12-22 Basf Se Pâte conductrice comprenant des huiles lubrifiantes et dispositif semi-conducteur
KR101835921B1 (ko) * 2014-03-18 2018-03-07 제일모직주식회사 태양전지 전극 형성용 조성물 및 이로부터 제조된 전극

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KR20120060047A (ko) * 2010-12-01 2012-06-11 에스에스씨피 주식회사 태양전지용 전극 페이스트 조성물, 그 제조방법 및 태양전지
KR101114357B1 (ko) * 2010-12-14 2012-02-15 이용안 돗자리
KR101285551B1 (ko) * 2011-08-31 2013-07-18 주식회사 케이씨씨 태양전지 전극 형성용 금속 페이스트
CN103170463B (zh) * 2011-12-21 2015-09-30 中建材浚鑫科技股份有限公司 一种网版的清洁处理方法
US20140352768A1 (en) * 2013-05-31 2014-12-04 E I Du Pont De Nemours And Company Method of manufacturing solar cell electrode
KR20150117762A (ko) 2014-04-10 2015-10-21 제일모직주식회사 태양전지 전극 형성용 조성물 및 이로부터 제조된 전극
KR20160126169A (ko) 2015-04-22 2016-11-02 삼성에스디아이 주식회사 태양전지 전극 형성용 조성물 및 이로부터 제조된 전극
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CN106297947A (zh) * 2016-08-10 2017-01-04 中国科学院电工研究所 用于晶硅太阳电池正面阻扩散层电极的镍浆及其制备方法
CN106098808B (zh) * 2016-08-10 2017-11-28 中国科学院电工研究所 一种晶硅太阳电池贱金属正面电极及其制备方法
KR101853417B1 (ko) * 2016-11-24 2018-05-02 엘에스니꼬동제련 주식회사 태양전지 전극용 도전성 페이스트 조성물 및 이를 사용하여 제조된 전극을 포함하는 태양전지
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KR102040302B1 (ko) * 2017-08-24 2019-11-04 삼성에스디아이 주식회사 태양전지 전극 형성용 조성물 및 이로부터 제조된 전극
CN110459343B (zh) * 2019-06-19 2020-12-18 南通天盛新能源股份有限公司 一种全铝背场晶体硅太阳能电池用低温烧结型背面银浆
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KR20240085736A (ko) * 2022-12-08 2024-06-17 주식회사 엘지에너지솔루션 리튬 이차전지용 전극 및 이를 포함하는 리튬 이차전지
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Publication number Priority date Publication date Assignee Title
CN102194898A (zh) * 2010-03-15 2011-09-21 常州天合光能有限公司 太阳能电池用导电镍浆
US20150364622A1 (en) * 2013-03-27 2015-12-17 Cheil Industries Inc. Composition for forming solar cell electrode and electrode produced from same
JP2016538708A (ja) * 2013-03-27 2016-12-08 チェイル インダストリーズ インコーポレイテッド 太陽電池電極形成用組成物およびそれにより製造された電極
US9899545B2 (en) * 2013-03-27 2018-02-20 Cheil Industries, Inc. Composition for forming solar cell electrode and electrode produced from same
JP2016533019A (ja) * 2013-09-13 2016-10-20 チェイル インダストリーズ インコーポレイテッド 太陽電池電極形成用組成物及びこれによって製造された電極
EP3026674A4 (fr) * 2013-09-13 2017-02-22 Cheil Industries Inc. Composition pour former une électrode de cellule solaire et électrode fabriquée à partir de la composition
KR101835921B1 (ko) * 2014-03-18 2018-03-07 제일모직주식회사 태양전지 전극 형성용 조성물 및 이로부터 제조된 전극
WO2016007351A1 (fr) * 2014-07-11 2016-01-14 E. I. Du Pont De Nemours And Company Compositions fluides durcissant a basse temperature pour former des trajets thermiquement conducteurs dans des applications de type electronique, et procedes correspondants
US9840651B2 (en) 2014-07-11 2017-12-12 E I Du Pont De Nemours And Company Flowable compositions with low temperature curing to form thermally conductive pathways in electronics type applications and methods relating thereto
JP2016213440A (ja) * 2015-04-28 2016-12-15 三星エスディアイ株式会社Samsung SDI Co., Ltd. 電極形成用組成物ならびに当該組成物を用いて製造される電極および太陽電池
WO2016202841A1 (fr) 2015-06-17 2016-12-22 Basf Se Pâte conductrice comprenant des huiles lubrifiantes et dispositif semi-conducteur

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