KR20100000685A - 전도성 페이스트 조성물 및 이를 이용한 전극 제조방법 - Google Patents
전도성 페이스트 조성물 및 이를 이용한 전극 제조방법 Download PDFInfo
- Publication number
- KR20100000685A KR20100000685A KR1020080060275A KR20080060275A KR20100000685A KR 20100000685 A KR20100000685 A KR 20100000685A KR 1020080060275 A KR1020080060275 A KR 1020080060275A KR 20080060275 A KR20080060275 A KR 20080060275A KR 20100000685 A KR20100000685 A KR 20100000685A
- Authority
- KR
- South Korea
- Prior art keywords
- electrode
- conductive paste
- weight
- paste composition
- conductive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 66
- 238000002360 preparation method Methods 0.000 title description 17
- 239000011347 resin Substances 0.000 claims abstract description 34
- 229920005989 resin Polymers 0.000 claims abstract description 34
- 239000011230 binding agent Substances 0.000 claims abstract description 33
- 239000003085 diluting agent Substances 0.000 claims abstract description 25
- 239000011521 glass Substances 0.000 claims abstract description 21
- 239000002003 electrode paste Substances 0.000 claims abstract description 14
- 239000007769 metal material Substances 0.000 claims abstract description 12
- 238000007639 printing Methods 0.000 claims abstract description 10
- 238000001035 drying Methods 0.000 claims abstract description 9
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims description 28
- 239000002245 particle Substances 0.000 claims description 26
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 21
- 239000013008 thixotropic agent Substances 0.000 claims description 21
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 claims description 18
- 238000004519 manufacturing process Methods 0.000 claims description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 10
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 claims description 9
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 claims description 9
- 150000001875 compounds Chemical class 0.000 claims description 8
- DAFHKNAQFPVRKR-UHFFFAOYSA-N (3-hydroxy-2,2,4-trimethylpentyl) 2-methylpropanoate Chemical compound CC(C)C(O)C(C)(C)COC(=O)C(C)C DAFHKNAQFPVRKR-UHFFFAOYSA-N 0.000 claims description 7
- MQIUGAXCHLFZKX-UHFFFAOYSA-N Di-n-octyl phthalate Natural products CCCCCCCCOC(=O)C1=CC=CC=C1C(=O)OCCCCCCCC MQIUGAXCHLFZKX-UHFFFAOYSA-N 0.000 claims description 7
- BJQHLKABXJIVAM-UHFFFAOYSA-N bis(2-ethylhexyl) phthalate Chemical compound CCCCC(CC)COC(=O)C1=CC=CC=C1C(=O)OCC(CC)CCCC BJQHLKABXJIVAM-UHFFFAOYSA-N 0.000 claims description 7
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 6
- DOIRQSBPFJWKBE-UHFFFAOYSA-N dibutyl phthalate Chemical compound CCCCOC(=O)C1=CC=CC=C1C(=O)OCCCC DOIRQSBPFJWKBE-UHFFFAOYSA-N 0.000 claims description 6
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 claims description 4
- 239000000654 additive Substances 0.000 claims description 4
- 229920002678 cellulose Polymers 0.000 claims description 4
- 239000001913 cellulose Substances 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- WUOACPNHFRMFPN-SECBINFHSA-N (S)-(-)-alpha-terpineol Chemical group CC1=CC[C@@H](C(C)(C)O)CC1 WUOACPNHFRMFPN-SECBINFHSA-N 0.000 claims description 3
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 claims description 3
- VXQBJTKSVGFQOL-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethyl acetate Chemical compound CCCCOCCOCCOC(C)=O VXQBJTKSVGFQOL-UHFFFAOYSA-N 0.000 claims description 3
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 claims description 3
- OVKDFILSBMEKLT-UHFFFAOYSA-N alpha-Terpineol Natural products CC(=C)C1(O)CCC(C)=CC1 OVKDFILSBMEKLT-UHFFFAOYSA-N 0.000 claims description 3
- 229940088601 alpha-terpineol Drugs 0.000 claims description 3
- 229910000278 bentonite Inorganic materials 0.000 claims description 3
- 239000000440 bentonite Substances 0.000 claims description 3
- SVPXDRXYRYOSEX-UHFFFAOYSA-N bentoquatam Chemical group O.O=[Si]=O.O=[Al]O[Al]=O SVPXDRXYRYOSEX-UHFFFAOYSA-N 0.000 claims description 3
- 229940028356 diethylene glycol monobutyl ether Drugs 0.000 claims description 3
- 239000003112 inhibitor Substances 0.000 claims description 3
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 claims description 3
- WVDDGKGOMKODPV-ZQBYOMGUSA-N phenyl(114C)methanol Chemical compound O[14CH2]C1=CC=CC=C1 WVDDGKGOMKODPV-ZQBYOMGUSA-N 0.000 claims description 3
- 239000003504 photosensitizing agent Substances 0.000 claims description 3
- 238000006116 polymerization reaction Methods 0.000 claims description 3
- 238000010022 rotary screen printing Methods 0.000 claims description 3
- 238000007650 screen-printing Methods 0.000 claims description 3
- NQBXSWAWVZHKBZ-UHFFFAOYSA-N 2-butoxyethyl acetate Chemical compound CCCCOCCOC(C)=O NQBXSWAWVZHKBZ-UHFFFAOYSA-N 0.000 claims description 2
- 239000004925 Acrylic resin Substances 0.000 claims description 2
- 229920000178 Acrylic resin Polymers 0.000 claims description 2
- 230000000996 additive effect Effects 0.000 claims description 2
- 239000000843 powder Substances 0.000 claims description 2
- 239000002904 solvent Substances 0.000 claims 1
- 239000002270 dispersing agent Substances 0.000 abstract description 13
- 238000010304 firing Methods 0.000 abstract description 11
- 238000006243 chemical reaction Methods 0.000 abstract description 2
- 230000000704 physical effect Effects 0.000 description 11
- 238000009849 vacuum degassing Methods 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 9
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 229910002016 Aerosil® 200 Inorganic materials 0.000 description 3
- 239000001856 Ethyl cellulose Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 229920001249 ethyl cellulose Polymers 0.000 description 3
- 235000019325 ethyl cellulose Nutrition 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- -1 acryl Chemical group 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229960002380 dibutyl phthalate Drugs 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 239000012046 mixed solvent Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- LNAZSHAWQACDHT-XIYTZBAFSA-N (2r,3r,4s,5r,6s)-4,5-dimethoxy-2-(methoxymethyl)-3-[(2s,3r,4s,5r,6r)-3,4,5-trimethoxy-6-(methoxymethyl)oxan-2-yl]oxy-6-[(2r,3r,4s,5r,6r)-4,5,6-trimethoxy-2-(methoxymethyl)oxan-3-yl]oxyoxane Chemical compound CO[C@@H]1[C@@H](OC)[C@H](OC)[C@@H](COC)O[C@H]1O[C@H]1[C@H](OC)[C@@H](OC)[C@H](O[C@H]2[C@@H]([C@@H](OC)[C@H](OC)O[C@@H]2COC)OC)O[C@@H]1COC LNAZSHAWQACDHT-XIYTZBAFSA-N 0.000 description 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- 229910002012 Aerosil® Inorganic materials 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229920000663 Hydroxyethyl cellulose Polymers 0.000 description 1
- 239000004354 Hydroxyethyl cellulose Substances 0.000 description 1
- 229920001479 Hydroxyethyl methyl cellulose Polymers 0.000 description 1
- 229920002153 Hydroxypropyl cellulose Polymers 0.000 description 1
- 229910018068 Li 2 O Inorganic materials 0.000 description 1
- HSHXDCVZWHOWCS-UHFFFAOYSA-N N'-hexadecylthiophene-2-carbohydrazide Chemical compound CCCCCCCCCCCCCCCCNNC(=O)c1cccs1 HSHXDCVZWHOWCS-UHFFFAOYSA-N 0.000 description 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 1
- 241000935974 Paralichthys dentatus Species 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 229940022663 acetate Drugs 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 229920002301 cellulose acetate Polymers 0.000 description 1
- 229920006217 cellulose acetate butyrate Polymers 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 235000019447 hydroxyethyl cellulose Nutrition 0.000 description 1
- 239000001863 hydroxypropyl cellulose Substances 0.000 description 1
- 235000010977 hydroxypropyl cellulose Nutrition 0.000 description 1
- 239000001866 hydroxypropyl methyl cellulose Substances 0.000 description 1
- 229920003088 hydroxypropyl methyl cellulose Polymers 0.000 description 1
- 235000010979 hydroxypropyl methyl cellulose Nutrition 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229920000609 methyl cellulose Polymers 0.000 description 1
- 239000001923 methylcellulose Substances 0.000 description 1
- 235000010981 methylcellulose Nutrition 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920001483 poly(ethyl methacrylate) polymer Polymers 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 1
- 229920000193 polymethacrylate Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 229920002689 polyvinyl acetate Polymers 0.000 description 1
- 239000011118 polyvinyl acetate Substances 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 230000009974 thixotropic effect Effects 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/14—Conductive material dispersed in non-conductive inorganic material
- H01B1/16—Conductive material dispersed in non-conductive inorganic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/138—Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/206—Electrodes for devices having potential barriers
- H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/30—Coatings
- H10F77/306—Coatings for devices having potential barriers
- H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
- H10F77/315—Coatings for devices having potential barriers for photovoltaic cells the coatings being antireflective or having enhancing optical properties
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Chemical & Material Sciences (AREA)
- Dispersion Chemistry (AREA)
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Inorganic Chemistry (AREA)
- Conductive Materials (AREA)
- Photovoltaic Devices (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020080060275A KR20100000685A (ko) | 2008-06-25 | 2008-06-25 | 전도성 페이스트 조성물 및 이를 이용한 전극 제조방법 |
| PCT/KR2009/003444 WO2009157727A2 (fr) | 2008-06-25 | 2009-06-25 | Composition de pâte conductrice et procédé de préparation d'une électrode utilisant cette composition |
| CN2009801240419A CN102077301A (zh) | 2008-06-25 | 2009-06-25 | 导电膏组合物及使用该导电膏组合物的电极制造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020080060275A KR20100000685A (ko) | 2008-06-25 | 2008-06-25 | 전도성 페이스트 조성물 및 이를 이용한 전극 제조방법 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20100000685A true KR20100000685A (ko) | 2010-01-06 |
Family
ID=41445114
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020080060275A Ceased KR20100000685A (ko) | 2008-06-25 | 2008-06-25 | 전도성 페이스트 조성물 및 이를 이용한 전극 제조방법 |
Country Status (3)
| Country | Link |
|---|---|
| KR (1) | KR20100000685A (fr) |
| CN (1) | CN102077301A (fr) |
| WO (1) | WO2009157727A2 (fr) |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101114357B1 (ko) * | 2010-12-14 | 2012-02-15 | 이용안 | 돗자리 |
| WO2012074314A3 (fr) * | 2010-12-01 | 2012-10-11 | 에스에스씨피 주식회사 | Composition de pâte pour une électrode d'une cellule solaire, procédé de préparation de celle-ci et cellule solaire |
| WO2013032092A1 (fr) * | 2011-08-31 | 2013-03-07 | 공주대학교 산학협력단 | Pâte métallique destinée à la formation d'une électrode de cellule solaire |
| WO2014157958A1 (fr) * | 2013-03-27 | 2014-10-02 | 제일모직 주식회사 | Composition permettant de former une électrode de cellule solaire et électrode produite à partir de celle-ci |
| WO2015037798A1 (fr) * | 2013-09-13 | 2015-03-19 | 제일모직 주식회사 | Composition pour former une électrode de cellule solaire et électrode fabriquée à partir de la composition |
| KR20170103724A (ko) * | 2017-08-24 | 2017-09-13 | 삼성에스디아이 주식회사 | 태양전지 전극 형성용 조성물 및 이로부터 제조된 전극 |
| KR20180008851A (ko) * | 2015-04-22 | 2018-01-24 | 삼성에스디아이 주식회사 | 태양전지 전극 형성용 조성물 및 이로부터 제조된 전극 |
| US10115845B2 (en) | 2015-04-22 | 2018-10-30 | Samsung Sdi Co., Ltd. | Composition for forming solar cell electrodes and electrodes fabricated using the same |
| US10544314B2 (en) | 2014-04-10 | 2020-01-28 | Samsung Sdi Co., Ltd. | Composition for solar cell electrodes and electrode fabricated using the same |
| WO2021182879A1 (fr) * | 2020-03-13 | 2021-09-16 | 동국대학교 산학협력단 | Pâte, son procédé de préparation et procédé de fabrication d'une couche de blocage pour une photo-électrode de cellule photovoltaïque l'utilisant |
| US20220134423A1 (en) * | 2019-06-19 | 2022-05-05 | Nantong T-Sun New Energy Co., Ltd. | Low temperature-sintering rear silver paste for all-aluminum back surface field crystalline silicon solar cell |
| WO2024122997A1 (fr) * | 2022-12-08 | 2024-06-13 | 주식회사 엘지에너지솔루션 | Électrode pour batterie secondaire au lithium et batterie secondaire au lithium la comportant |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102194898B (zh) * | 2010-03-15 | 2013-03-27 | 常州天合光能有限公司 | 太阳能电池用导电镍浆 |
| CN103170463B (zh) * | 2011-12-21 | 2015-09-30 | 中建材浚鑫科技股份有限公司 | 一种网版的清洁处理方法 |
| KR101835921B1 (ko) * | 2014-03-18 | 2018-03-07 | 제일모직주식회사 | 태양전지 전극 형성용 조성물 및 이로부터 제조된 전극 |
| US20140352768A1 (en) * | 2013-05-31 | 2014-12-04 | E I Du Pont De Nemours And Company | Method of manufacturing solar cell electrode |
| EP3167458B1 (fr) | 2014-07-11 | 2020-04-29 | E. I. du Pont de Nemours and Company | Compositions fluides durcissant a basse temperature pour former des trajets thermiquement conducteurs dans des applications de type electronique, et procedes correspondants |
| KR101816236B1 (ko) * | 2015-04-28 | 2018-01-08 | 삼성에스디아이 주식회사 | 전극 형성용 조성물 및 이로부터 제조된 전극과 태양전지 |
| JP2018519634A (ja) | 2015-06-17 | 2018-07-19 | ビーエーエスエフ ソシエタス・ヨーロピアBasf Se | 潤滑油を含む導電性ペースト及び半導体素子 |
| EP3380571B1 (fr) * | 2016-03-24 | 2023-08-09 | Ferro Corporation | Argent polymère à conductivité rapide |
| CN106297947A (zh) * | 2016-08-10 | 2017-01-04 | 中国科学院电工研究所 | 用于晶硅太阳电池正面阻扩散层电极的镍浆及其制备方法 |
| CN106098808B (zh) * | 2016-08-10 | 2017-11-28 | 中国科学院电工研究所 | 一种晶硅太阳电池贱金属正面电极及其制备方法 |
| KR101853417B1 (ko) * | 2016-11-24 | 2018-05-02 | 엘에스니꼬동제련 주식회사 | 태양전지 전극용 도전성 페이스트 조성물 및 이를 사용하여 제조된 전극을 포함하는 태양전지 |
| CN106971769A (zh) * | 2017-04-10 | 2017-07-21 | 台山市都斛亚美化工有限公司 | 一种高温导电银浆 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JPH0766690B2 (ja) * | 1986-10-13 | 1995-07-19 | 株式会社村田製作所 | 導電ペ−スト |
| KR940004869B1 (ko) * | 1990-12-11 | 1994-06-02 | 주식회사 코오롱 | 폴리아미드 수지 조성물 |
| KR19980046579A (ko) * | 1996-12-12 | 1998-09-15 | 조희재 | 칩 저항기의 2차 전극용 후막 도체 페이스트 조성물 |
| KR100996235B1 (ko) * | 2004-06-01 | 2010-11-25 | 주식회사 동진쎄미켐 | PDP 어드레스 전극용 Pb 미함유 Ag 페이스트 조성물 |
-
2008
- 2008-06-25 KR KR1020080060275A patent/KR20100000685A/ko not_active Ceased
-
2009
- 2009-06-25 CN CN2009801240419A patent/CN102077301A/zh active Pending
- 2009-06-25 WO PCT/KR2009/003444 patent/WO2009157727A2/fr not_active Ceased
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012074314A3 (fr) * | 2010-12-01 | 2012-10-11 | 에스에스씨피 주식회사 | Composition de pâte pour une électrode d'une cellule solaire, procédé de préparation de celle-ci et cellule solaire |
| KR101114357B1 (ko) * | 2010-12-14 | 2012-02-15 | 이용안 | 돗자리 |
| WO2013032092A1 (fr) * | 2011-08-31 | 2013-03-07 | 공주대학교 산학협력단 | Pâte métallique destinée à la formation d'une électrode de cellule solaire |
| KR101285551B1 (ko) * | 2011-08-31 | 2013-07-18 | 주식회사 케이씨씨 | 태양전지 전극 형성용 금속 페이스트 |
| US9899545B2 (en) | 2013-03-27 | 2018-02-20 | Cheil Industries, Inc. | Composition for forming solar cell electrode and electrode produced from same |
| WO2014157958A1 (fr) * | 2013-03-27 | 2014-10-02 | 제일모직 주식회사 | Composition permettant de former une électrode de cellule solaire et électrode produite à partir de celle-ci |
| WO2015037798A1 (fr) * | 2013-09-13 | 2015-03-19 | 제일모직 주식회사 | Composition pour former une électrode de cellule solaire et électrode fabriquée à partir de la composition |
| KR20150031150A (ko) * | 2013-09-13 | 2015-03-23 | 제일모직주식회사 | 태양전지 전극 형성용 조성물 및 이로부터 제조된 전극 |
| US9515202B2 (en) | 2013-09-13 | 2016-12-06 | Cheil Industries, Inc. | Composition for forming solar cell electrode, and electrode produced from composition |
| US10544314B2 (en) | 2014-04-10 | 2020-01-28 | Samsung Sdi Co., Ltd. | Composition for solar cell electrodes and electrode fabricated using the same |
| KR20180008851A (ko) * | 2015-04-22 | 2018-01-24 | 삼성에스디아이 주식회사 | 태양전지 전극 형성용 조성물 및 이로부터 제조된 전극 |
| US10115845B2 (en) | 2015-04-22 | 2018-10-30 | Samsung Sdi Co., Ltd. | Composition for forming solar cell electrodes and electrodes fabricated using the same |
| KR20170103724A (ko) * | 2017-08-24 | 2017-09-13 | 삼성에스디아이 주식회사 | 태양전지 전극 형성용 조성물 및 이로부터 제조된 전극 |
| US20220134423A1 (en) * | 2019-06-19 | 2022-05-05 | Nantong T-Sun New Energy Co., Ltd. | Low temperature-sintering rear silver paste for all-aluminum back surface field crystalline silicon solar cell |
| WO2021182879A1 (fr) * | 2020-03-13 | 2021-09-16 | 동국대학교 산학협력단 | Pâte, son procédé de préparation et procédé de fabrication d'une couche de blocage pour une photo-électrode de cellule photovoltaïque l'utilisant |
| KR20210116772A (ko) * | 2020-03-13 | 2021-09-28 | 동국대학교 산학협력단 | 페이스트, 이의 제조방법 및 이를 이용한 태양전지 광전극용 차단층 제조방법 |
| WO2024122997A1 (fr) * | 2022-12-08 | 2024-06-13 | 주식회사 엘지에너지솔루션 | Électrode pour batterie secondaire au lithium et batterie secondaire au lithium la comportant |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2009157727A3 (fr) | 2010-04-15 |
| WO2009157727A2 (fr) | 2009-12-30 |
| CN102077301A (zh) | 2011-05-25 |
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