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WO2009031381A1 - Metal oxide semiconductor manufacturing method and thin film transistor obtained by the method - Google Patents

Metal oxide semiconductor manufacturing method and thin film transistor obtained by the method Download PDF

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Publication number
WO2009031381A1
WO2009031381A1 PCT/JP2008/064206 JP2008064206W WO2009031381A1 WO 2009031381 A1 WO2009031381 A1 WO 2009031381A1 JP 2008064206 W JP2008064206 W JP 2008064206W WO 2009031381 A1 WO2009031381 A1 WO 2009031381A1
Authority
WO
WIPO (PCT)
Prior art keywords
metal oxide
oxide semiconductor
thin film
semiconductor manufacturing
film transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/064206
Other languages
French (fr)
Japanese (ja)
Inventor
Makoto Honda
Katsura Hirai
Hiroshi Kita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Konica Minolta Inc
Original Assignee
Konica Minolta Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Konica Minolta Inc filed Critical Konica Minolta Inc
Priority to JP2009531166A priority Critical patent/JPWO2009031381A1/en
Publication of WO2009031381A1 publication Critical patent/WO2009031381A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate

Landscapes

  • Thin Film Transistor (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

Provided is a novel metal oxide semiconductor manufacturing method by which fluctuation of off-current or the like is improved, mobility is improved, a TFT element is stabilized, and furthermore, production efficiency is improved and a metal oxide semiconductor is made flexible by performing formation by continuous application, printing and the like on a resin substrate. A thin film transistor manufactured by such manufacturing method is also provided. The metal oxide semiconductor manufacturing method is characterized in forming a thin film including a precursor of a metal oxide semiconductor, on the substrate, then, irradiating the thin film with electromagnetic wave under existence of oxygen to manufacture the metal oxide semiconductor.
PCT/JP2008/064206 2007-09-07 2008-08-07 Metal oxide semiconductor manufacturing method and thin film transistor obtained by the method Ceased WO2009031381A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009531166A JPWO2009031381A1 (en) 2007-09-07 2008-08-07 Method for producing metal oxide semiconductor, and thin film transistor obtained by the method

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007232428 2007-09-07
JP2007-232428 2007-09-07

Publications (1)

Publication Number Publication Date
WO2009031381A1 true WO2009031381A1 (en) 2009-03-12

Family

ID=40428703

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/064206 Ceased WO2009031381A1 (en) 2007-09-07 2008-08-07 Metal oxide semiconductor manufacturing method and thin film transistor obtained by the method

Country Status (2)

Country Link
JP (1) JPWO2009031381A1 (en)
WO (1) WO2009031381A1 (en)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010106920A1 (en) * 2009-03-18 2010-09-23 コニカミノルタホールディングス株式会社 Method for manufacturing thin film transistor, and thin film transistor
JP2010258058A (en) * 2009-04-22 2010-11-11 Konica Minolta Holdings Inc Method for manufacturing metal oxide semiconductor, metal oxide semiconductor and thin-film transistor
JP2010263103A (en) * 2009-05-08 2010-11-18 Konica Minolta Holdings Inc Thin film transistor and manufacturing method thereof
JP2010272663A (en) * 2009-05-21 2010-12-02 Sony Corp Thin film transistor, display device, and electronic device
JP2011512029A (en) * 2008-01-31 2011-04-14 ノースウエスタン ユニバーシティ Solution processing type high mobility inorganic thin film transistor
CN104347728A (en) * 2013-08-07 2015-02-11 加利福尼亚大学董事会 Transparent metal oxide nanoparticle compositions, methods of manufacture thereof and articles comprising the same
JP2016028291A (en) * 2010-04-28 2016-02-25 株式会社半導体エネルギー研究所 Method for manufacturing liquid crystal display device
US9515193B2 (en) 2013-03-19 2016-12-06 Fujifilm Corporation Metal oxide film, method for manufacturing same, thin film transistor, display apparatus, image sensor, and X-ray sensor
JP2017152693A (en) * 2016-02-24 2017-08-31 日本放送協会 Coating type oxide semiconductor, thin film transistor, display device, and manufacturing method of coating type oxide semiconductor
US9779938B2 (en) 2013-07-10 2017-10-03 Fujifilm Corporation Metal oxide thin film, method of producing same, and coating solution for forming metal oxide thin film used in said method
US9852906B2 (en) 2009-06-30 2017-12-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JPWO2019234561A1 (en) * 2018-06-08 2021-06-17 株式会社半導体エネルギー研究所 Semiconductor devices and methods for manufacturing semiconductor devices

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05251705A (en) * 1992-03-04 1993-09-28 Fuji Xerox Co Ltd Thin-film transistor
JP2000123658A (en) * 1998-10-09 2000-04-28 Fuji Photo Film Co Ltd Manufacture of transparent conductive film and transparent conductive film
JP2001244464A (en) * 2000-03-02 2001-09-07 Sanyo Electric Works Ltd Method for manufacturing metal oxide transistor
JP2007042689A (en) * 2005-07-29 2007-02-15 Fujifilm Holdings Corp Metal alkoxide solution, semiconductor device manufacturing method using the same, and semiconductor device
JP2007042690A (en) * 2005-07-29 2007-02-15 Fujifilm Holdings Corp Nanoparticle dispersion, semiconductor device manufacturing method using the same, and semiconductor device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05251705A (en) * 1992-03-04 1993-09-28 Fuji Xerox Co Ltd Thin-film transistor
JP2000123658A (en) * 1998-10-09 2000-04-28 Fuji Photo Film Co Ltd Manufacture of transparent conductive film and transparent conductive film
JP2001244464A (en) * 2000-03-02 2001-09-07 Sanyo Electric Works Ltd Method for manufacturing metal oxide transistor
JP2007042689A (en) * 2005-07-29 2007-02-15 Fujifilm Holdings Corp Metal alkoxide solution, semiconductor device manufacturing method using the same, and semiconductor device
JP2007042690A (en) * 2005-07-29 2007-02-15 Fujifilm Holdings Corp Nanoparticle dispersion, semiconductor device manufacturing method using the same, and semiconductor device

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011512029A (en) * 2008-01-31 2011-04-14 ノースウエスタン ユニバーシティ Solution processing type high mobility inorganic thin film transistor
WO2010106920A1 (en) * 2009-03-18 2010-09-23 コニカミノルタホールディングス株式会社 Method for manufacturing thin film transistor, and thin film transistor
JP2010258058A (en) * 2009-04-22 2010-11-11 Konica Minolta Holdings Inc Method for manufacturing metal oxide semiconductor, metal oxide semiconductor and thin-film transistor
JP2010263103A (en) * 2009-05-08 2010-11-18 Konica Minolta Holdings Inc Thin film transistor and manufacturing method thereof
JP2010272663A (en) * 2009-05-21 2010-12-02 Sony Corp Thin film transistor, display device, and electronic device
US9852906B2 (en) 2009-06-30 2017-12-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US10332743B2 (en) 2009-06-30 2019-06-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP2016028291A (en) * 2010-04-28 2016-02-25 株式会社半導体エネルギー研究所 Method for manufacturing liquid crystal display device
JP2017116942A (en) * 2010-04-28 2017-06-29 株式会社半導体エネルギー研究所 Method for manufacturing liquid crystal display device
US9697788B2 (en) 2010-04-28 2017-07-04 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
US9515193B2 (en) 2013-03-19 2016-12-06 Fujifilm Corporation Metal oxide film, method for manufacturing same, thin film transistor, display apparatus, image sensor, and X-ray sensor
US9779938B2 (en) 2013-07-10 2017-10-03 Fujifilm Corporation Metal oxide thin film, method of producing same, and coating solution for forming metal oxide thin film used in said method
CN104347728A (en) * 2013-08-07 2015-02-11 加利福尼亚大学董事会 Transparent metal oxide nanoparticle compositions, methods of manufacture thereof and articles comprising the same
JP2017152693A (en) * 2016-02-24 2017-08-31 日本放送協会 Coating type oxide semiconductor, thin film transistor, display device, and manufacturing method of coating type oxide semiconductor
JPWO2019234561A1 (en) * 2018-06-08 2021-06-17 株式会社半導体エネルギー研究所 Semiconductor devices and methods for manufacturing semiconductor devices
JP7297743B2 (en) 2018-06-08 2023-06-26 株式会社半導体エネルギー研究所 METHOD FOR MAKING METAL OXIDE

Also Published As

Publication number Publication date
JPWO2009031381A1 (en) 2010-12-09

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