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WO2009011224A1 - Method for producing metal oxide semiconductor, and thin film transistor obtained from the metal oxide semiconductor - Google Patents

Method for producing metal oxide semiconductor, and thin film transistor obtained from the metal oxide semiconductor Download PDF

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Publication number
WO2009011224A1
WO2009011224A1 PCT/JP2008/061969 JP2008061969W WO2009011224A1 WO 2009011224 A1 WO2009011224 A1 WO 2009011224A1 JP 2008061969 W JP2008061969 W JP 2008061969W WO 2009011224 A1 WO2009011224 A1 WO 2009011224A1
Authority
WO
WIPO (PCT)
Prior art keywords
metal oxide
oxide semiconductor
thin film
producing
film transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/061969
Other languages
French (fr)
Japanese (ja)
Inventor
Katsura Hirai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Konica Minolta Inc
Original Assignee
Konica Minolta Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Konica Minolta Inc filed Critical Konica Minolta Inc
Priority to JP2009523592A priority Critical patent/JPWO2009011224A1/en
Publication of WO2009011224A1 publication Critical patent/WO2009011224A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate

Landscapes

  • Thin Film Transistor (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

Disclosed are a novel metal oxide semiconductor and a method for producing such a metal oxide semiconductor. Specifically disclosed is a method for producing a metal oxide semiconductor with improved efficiency, which enables to stabilize a TFT device by improving fluctuations in the off current and the like and increasing mobility. Also specifically disclosed is a thin film transistor obtained by using a metal oxide semiconductor produced by the method. The method for producing a metal oxide semiconductor is characterized in that a thin film containing a precursor of a metal oxide semiconductor is formed, and then the metal oxide semiconductor is produced by irradiating the thin film with light in the presence of oxygen.
PCT/JP2008/061969 2007-07-18 2008-07-02 Method for producing metal oxide semiconductor, and thin film transistor obtained from the metal oxide semiconductor Ceased WO2009011224A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009523592A JPWO2009011224A1 (en) 2007-07-18 2008-07-02 Method for producing metal oxide semiconductor and thin film transistor obtained thereby

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007186770 2007-07-18
JP2007-186770 2007-07-18

Publications (1)

Publication Number Publication Date
WO2009011224A1 true WO2009011224A1 (en) 2009-01-22

Family

ID=40259562

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/061969 Ceased WO2009011224A1 (en) 2007-07-18 2008-07-02 Method for producing metal oxide semiconductor, and thin film transistor obtained from the metal oxide semiconductor

Country Status (2)

Country Link
JP (1) JPWO2009011224A1 (en)
WO (1) WO2009011224A1 (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010219133A (en) * 2009-03-13 2010-09-30 Fuji Electric Systems Co Ltd Apparatus for manufacturing semiconductor device, and method of manufacturing semiconductor device
JP2010258058A (en) * 2009-04-22 2010-11-11 Konica Minolta Holdings Inc Method for manufacturing metal oxide semiconductor, metal oxide semiconductor and thin-film transistor
US8654215B2 (en) 2009-02-23 2014-02-18 Gary Edwin Sutton Mobile communicator with curved sensor camera
KR101389451B1 (en) * 2012-03-19 2014-04-29 연세대학교 산학협력단 Composition for oxide thin film, Method for forming oxide thin film, an electrical device using the low-temperature pressure annealing, and a thin film transistor
KR101415748B1 (en) * 2011-06-09 2014-08-06 연세대학교 산학협력단 A composition for oxide semiconductor, preparation methods thereof, methods of forming the oxide semiconductor thin film, methods of fomring an electrical device and an electrical device formed thereby
JP2015176965A (en) * 2014-03-14 2015-10-05 株式会社日本製鋼所 Method for producing oxide-based material
JP5920220B2 (en) * 2010-10-26 2016-05-18 日産化学工業株式会社 Capacitive touch panel manufacturing method
US9515193B2 (en) 2013-03-19 2016-12-06 Fujifilm Corporation Metal oxide film, method for manufacturing same, thin film transistor, display apparatus, image sensor, and X-ray sensor
KR20170051519A (en) 2014-10-27 2017-05-11 후지필름 가부시키가이샤 Method for producing metal oxide semiconductor film, metal oxide semiconductor film, thin film transistor and electronic device
US9779938B2 (en) 2013-07-10 2017-10-03 Fujifilm Corporation Metal oxide thin film, method of producing same, and coating solution for forming metal oxide thin film used in said method

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05251705A (en) * 1992-03-04 1993-09-28 Fuji Xerox Co Ltd Thin-film transistor
JPH08264794A (en) * 1995-03-27 1996-10-11 Res Dev Corp Of Japan Metal oxide semiconductor device in which a pn junction is formed with a thin film transistor made of a metal oxide semiconductor such as cuprous oxide, and methods for manufacturing the same
JP2000247608A (en) * 1999-02-26 2000-09-12 Kansai Research Institute Production of metal oxide film
JP2001244464A (en) * 2000-03-02 2001-09-07 Sanyo Electric Works Ltd Method for manufacturing metal oxide transistor
JP2004031933A (en) * 2002-05-09 2004-01-29 Konica Minolta Holdings Inc Method of manufacturing organic thin film transistor, and organic thin film transistor and organic thin film transistor sheet manufactured thereby
JP2007042689A (en) * 2005-07-29 2007-02-15 Fujifilm Holdings Corp Metal alkoxide solution, semiconductor device manufacturing method using the same, and semiconductor device

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05251705A (en) * 1992-03-04 1993-09-28 Fuji Xerox Co Ltd Thin-film transistor
JPH08264794A (en) * 1995-03-27 1996-10-11 Res Dev Corp Of Japan Metal oxide semiconductor device in which a pn junction is formed with a thin film transistor made of a metal oxide semiconductor such as cuprous oxide, and methods for manufacturing the same
JP2000247608A (en) * 1999-02-26 2000-09-12 Kansai Research Institute Production of metal oxide film
JP2001244464A (en) * 2000-03-02 2001-09-07 Sanyo Electric Works Ltd Method for manufacturing metal oxide transistor
JP2004031933A (en) * 2002-05-09 2004-01-29 Konica Minolta Holdings Inc Method of manufacturing organic thin film transistor, and organic thin film transistor and organic thin film transistor sheet manufactured thereby
JP2007042689A (en) * 2005-07-29 2007-02-15 Fujifilm Holdings Corp Metal alkoxide solution, semiconductor device manufacturing method using the same, and semiconductor device

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8654215B2 (en) 2009-02-23 2014-02-18 Gary Edwin Sutton Mobile communicator with curved sensor camera
JP2010219133A (en) * 2009-03-13 2010-09-30 Fuji Electric Systems Co Ltd Apparatus for manufacturing semiconductor device, and method of manufacturing semiconductor device
JP2010258058A (en) * 2009-04-22 2010-11-11 Konica Minolta Holdings Inc Method for manufacturing metal oxide semiconductor, metal oxide semiconductor and thin-film transistor
JP5920220B2 (en) * 2010-10-26 2016-05-18 日産化学工業株式会社 Capacitive touch panel manufacturing method
KR101415748B1 (en) * 2011-06-09 2014-08-06 연세대학교 산학협력단 A composition for oxide semiconductor, preparation methods thereof, methods of forming the oxide semiconductor thin film, methods of fomring an electrical device and an electrical device formed thereby
KR101389451B1 (en) * 2012-03-19 2014-04-29 연세대학교 산학협력단 Composition for oxide thin film, Method for forming oxide thin film, an electrical device using the low-temperature pressure annealing, and a thin film transistor
US9515193B2 (en) 2013-03-19 2016-12-06 Fujifilm Corporation Metal oxide film, method for manufacturing same, thin film transistor, display apparatus, image sensor, and X-ray sensor
US9779938B2 (en) 2013-07-10 2017-10-03 Fujifilm Corporation Metal oxide thin film, method of producing same, and coating solution for forming metal oxide thin film used in said method
JP2015176965A (en) * 2014-03-14 2015-10-05 株式会社日本製鋼所 Method for producing oxide-based material
KR20170051519A (en) 2014-10-27 2017-05-11 후지필름 가부시키가이샤 Method for producing metal oxide semiconductor film, metal oxide semiconductor film, thin film transistor and electronic device

Also Published As

Publication number Publication date
JPWO2009011224A1 (en) 2010-09-16

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