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WO2009011224A1 - Procédé de production d'un semi-conducteur d'oxyde métallique, et transistor en couches minces obtenu à partir du semi-conducteur d'oxyde métallique - Google Patents

Procédé de production d'un semi-conducteur d'oxyde métallique, et transistor en couches minces obtenu à partir du semi-conducteur d'oxyde métallique Download PDF

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Publication number
WO2009011224A1
WO2009011224A1 PCT/JP2008/061969 JP2008061969W WO2009011224A1 WO 2009011224 A1 WO2009011224 A1 WO 2009011224A1 JP 2008061969 W JP2008061969 W JP 2008061969W WO 2009011224 A1 WO2009011224 A1 WO 2009011224A1
Authority
WO
WIPO (PCT)
Prior art keywords
metal oxide
oxide semiconductor
thin film
producing
film transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/061969
Other languages
English (en)
Japanese (ja)
Inventor
Katsura Hirai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Konica Minolta Inc
Original Assignee
Konica Minolta Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Konica Minolta Inc filed Critical Konica Minolta Inc
Priority to JP2009523592A priority Critical patent/JPWO2009011224A1/ja
Publication of WO2009011224A1 publication Critical patent/WO2009011224A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate

Landscapes

  • Thin Film Transistor (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

L'invention porte sur un nouveau semi-conducteur d'oxyde métallique et sur un procédé de production d'un tel semi-conducteur d'oxyde métallique. De façon précise, l'invention porte sur un procédé de production d'un semi-conducteur d'oxyde métallique avec un meilleur rendement, qui permet de stabiliser un dispositif transistor en couches minces (TFT) par amélioration des fluctuations du courant à l'état bloqué et similaire et augmentation de la mobilité. De façon précise, l'invention porte également sur un transistor en couches minces obtenu à l'aide d'un semi-conducteur d'oxyde métallique produit par le procédé. Le procédé de production d'un semi-conducteur d'oxyde métallique est caractérisé par le fait qu'un film mince contenant un précurseur d'un semi-conducteur d'oxyde métallique est formé, puis le semi-conducteur d'oxyde métallique est produit par irradiation du film mince avec une lumière en présence d'oxygène.
PCT/JP2008/061969 2007-07-18 2008-07-02 Procédé de production d'un semi-conducteur d'oxyde métallique, et transistor en couches minces obtenu à partir du semi-conducteur d'oxyde métallique Ceased WO2009011224A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009523592A JPWO2009011224A1 (ja) 2007-07-18 2008-07-02 金属酸化物半導体の製造方法、それにより得られた薄膜トランジスタ

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-186770 2007-07-18
JP2007186770 2007-07-18

Publications (1)

Publication Number Publication Date
WO2009011224A1 true WO2009011224A1 (fr) 2009-01-22

Family

ID=40259562

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/061969 Ceased WO2009011224A1 (fr) 2007-07-18 2008-07-02 Procédé de production d'un semi-conducteur d'oxyde métallique, et transistor en couches minces obtenu à partir du semi-conducteur d'oxyde métallique

Country Status (2)

Country Link
JP (1) JPWO2009011224A1 (fr)
WO (1) WO2009011224A1 (fr)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010219133A (ja) * 2009-03-13 2010-09-30 Fuji Electric Systems Co Ltd 半導体装置の製造装置および半導体装置の製造方法
JP2010258058A (ja) * 2009-04-22 2010-11-11 Konica Minolta Holdings Inc 金属酸化物半導体の製造方法、金属酸化物半導体および薄膜トランジスタ
US8654215B2 (en) 2009-02-23 2014-02-18 Gary Edwin Sutton Mobile communicator with curved sensor camera
KR101389451B1 (ko) * 2012-03-19 2014-04-29 연세대학교 산학협력단 산화물 박막용 조성물, 이를 이용한 액상 공정 산화물 박막의 제조 방법, 이를 이용한 전자 소자 및 박막 트랜지스터
KR101415748B1 (ko) * 2011-06-09 2014-08-06 연세대학교 산학협력단 산화물반도체 조성물 및 그 제조방법, 산화물반도체 박막 형성 방법, 전자소자 제조 방법 및 그에 따라 제조된 전자 부품
JP2015176965A (ja) * 2014-03-14 2015-10-05 株式会社日本製鋼所 酸化物系材料の製造方法
JP5920220B2 (ja) * 2010-10-26 2016-05-18 日産化学工業株式会社 静電容量方式のタッチパネルの製造方法
US9515193B2 (en) 2013-03-19 2016-12-06 Fujifilm Corporation Metal oxide film, method for manufacturing same, thin film transistor, display apparatus, image sensor, and X-ray sensor
KR20170051519A (ko) 2014-10-27 2017-05-11 후지필름 가부시키가이샤 금속 산화물 반도체막의 제조 방법과, 금속 산화물 반도체막, 박막 트랜지스터 및 전자 디바이스
US9779938B2 (en) 2013-07-10 2017-10-03 Fujifilm Corporation Metal oxide thin film, method of producing same, and coating solution for forming metal oxide thin film used in said method

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05251705A (ja) * 1992-03-04 1993-09-28 Fuji Xerox Co Ltd 薄膜トランジスタ
JPH08264794A (ja) * 1995-03-27 1996-10-11 Res Dev Corp Of Japan 亜酸化銅等の金属酸化物半導体による薄膜トランジスタとｐｎ接合を形成した金属酸化物半導体装置およびそれらの製造方法
JP2000247608A (ja) * 1999-02-26 2000-09-12 Kansai Research Institute 金属酸化物膜の製造方法
JP2001244464A (ja) * 2000-03-02 2001-09-07 Sanyo Electric Works Ltd 金属酸化物トランジスタの製造方法
JP2004031933A (ja) * 2002-05-09 2004-01-29 Konica Minolta Holdings Inc 有機薄膜トランジスタの製造方法及び、それにより製造された有機薄膜トランジスタと有機薄膜トランジスタシート
JP2007042689A (ja) * 2005-07-29 2007-02-15 Fujifilm Holdings Corp 金属アルコキシド溶液、それを用いた半導体デバイスの製造方法及び半導体デバイス

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05251705A (ja) * 1992-03-04 1993-09-28 Fuji Xerox Co Ltd 薄膜トランジスタ
JPH08264794A (ja) * 1995-03-27 1996-10-11 Res Dev Corp Of Japan 亜酸化銅等の金属酸化物半導体による薄膜トランジスタとｐｎ接合を形成した金属酸化物半導体装置およびそれらの製造方法
JP2000247608A (ja) * 1999-02-26 2000-09-12 Kansai Research Institute 金属酸化物膜の製造方法
JP2001244464A (ja) * 2000-03-02 2001-09-07 Sanyo Electric Works Ltd 金属酸化物トランジスタの製造方法
JP2004031933A (ja) * 2002-05-09 2004-01-29 Konica Minolta Holdings Inc 有機薄膜トランジスタの製造方法及び、それにより製造された有機薄膜トランジスタと有機薄膜トランジスタシート
JP2007042689A (ja) * 2005-07-29 2007-02-15 Fujifilm Holdings Corp 金属アルコキシド溶液、それを用いた半導体デバイスの製造方法及び半導体デバイス

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8654215B2 (en) 2009-02-23 2014-02-18 Gary Edwin Sutton Mobile communicator with curved sensor camera
JP2010219133A (ja) * 2009-03-13 2010-09-30 Fuji Electric Systems Co Ltd 半導体装置の製造装置および半導体装置の製造方法
JP2010258058A (ja) * 2009-04-22 2010-11-11 Konica Minolta Holdings Inc 金属酸化物半導体の製造方法、金属酸化物半導体および薄膜トランジスタ
JP5920220B2 (ja) * 2010-10-26 2016-05-18 日産化学工業株式会社 静電容量方式のタッチパネルの製造方法
KR101415748B1 (ko) * 2011-06-09 2014-08-06 연세대학교 산학협력단 산화물반도체 조성물 및 그 제조방법, 산화물반도체 박막 형성 방법, 전자소자 제조 방법 및 그에 따라 제조된 전자 부품
KR101389451B1 (ko) * 2012-03-19 2014-04-29 연세대학교 산학협력단 산화물 박막용 조성물, 이를 이용한 액상 공정 산화물 박막의 제조 방법, 이를 이용한 전자 소자 및 박막 트랜지스터
US9515193B2 (en) 2013-03-19 2016-12-06 Fujifilm Corporation Metal oxide film, method for manufacturing same, thin film transistor, display apparatus, image sensor, and X-ray sensor
US9779938B2 (en) 2013-07-10 2017-10-03 Fujifilm Corporation Metal oxide thin film, method of producing same, and coating solution for forming metal oxide thin film used in said method
JP2015176965A (ja) * 2014-03-14 2015-10-05 株式会社日本製鋼所 酸化物系材料の製造方法
KR20170051519A (ko) 2014-10-27 2017-05-11 후지필름 가부시키가이샤 금속 산화물 반도체막의 제조 방법과, 금속 산화물 반도체막, 박막 트랜지스터 및 전자 디바이스

Also Published As

Publication number Publication date
JPWO2009011224A1 (ja) 2010-09-16

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