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WO2009008202A1 - 窒化物系半導体発光素子、および窒化物系半導体発光素子を作製する方法 - Google Patents

窒化物系半導体発光素子、および窒化物系半導体発光素子を作製する方法 Download PDF

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Publication number
WO2009008202A1
WO2009008202A1 PCT/JP2008/057488 JP2008057488W WO2009008202A1 WO 2009008202 A1 WO2009008202 A1 WO 2009008202A1 JP 2008057488 W JP2008057488 W JP 2008057488W WO 2009008202 A1 WO2009008202 A1 WO 2009008202A1
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Prior art keywords
nitride semiconductor
light emitting
emitting element
semiconductor light
active layer
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Ceased
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PCT/JP2008/057488
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English (en)
French (fr)
Inventor
Katsushi Akita
Takashi Kyono
Keiji Ishibashi
Hitoshi Kasai
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Sumitomo Electric Industries Ltd
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Sumitomo Electric Industries Ltd
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Priority to CN2008800007766A priority Critical patent/CN101548400B/zh
Priority to EP08740558A priority patent/EP2056367A1/en
Priority to US12/440,643 priority patent/US7973322B2/en
Publication of WO2009008202A1 publication Critical patent/WO2009008202A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2304/00—Special growth methods for semiconductor lasers
    • H01S2304/04—MOCVD or MOVPE
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H01S5/0202—Cleaving
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2009—Confining in the direction perpendicular to the layer structure by using electron barrier layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3202—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth
    • H01S5/32025—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth non-polar orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Led Devices (AREA)

Abstract

　活性層１７は、波長４４０ｎｍ以上５５０ｎｍ以下の範囲の発光波長の光を発生するように設けられる。第１導電型窒化ガリウム系半導体領域１３、活性層１７および第２導電型窒化ガリウム系半導体領域１５は、所定の軸Ａｘの方向に配列されている。活性層１７は、六方晶系ＩｎＸＧａ１－ＸＮ（０．１６≦Ｘ≦０．３５、Ｘは歪み組成）からなる井戸層を含み、インジウム組成Ｘは歪み組成で表されている。六方晶系ＩｎＸＧａ１－ＸＮのａ面が所定の軸Ａｘの方向に向いている。井戸層の厚さは２．５ｎｍより大きく１０ｎｍ以下である。井戸層の厚みを２．５ｎｍ以上にすることによって、発光波長４４０ｎｍ以上の発光素子を作製することができる。
PCT/JP2008/057488 2007-07-11 2008-04-17 窒化物系半導体発光素子、および窒化物系半導体発光素子を作製する方法 Ceased WO2009008202A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN2008800007766A CN101548400B (zh) 2007-07-11 2008-04-17 氮化物半导体发光元件和其形成方法
EP08740558A EP2056367A1 (en) 2007-07-11 2008-04-17 Nitride semiconductor light emitting element and method for manufacturing nitride semiconductor light emitting element
US12/440,643 US7973322B2 (en) 2007-07-11 2008-04-17 Nitride semiconductor light emitting device and method for forming the same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007182435A JP2009021361A (ja) 2007-07-11 2007-07-11 窒化物系半導体発光素子、および窒化物系半導体発光素子を作製する方法
JP2007-182435 2007-07-11

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WO2009008202A1 true WO2009008202A1 (ja) 2009-01-15

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PCT/JP2008/057488 Ceased WO2009008202A1 (ja) 2007-07-11 2008-04-17 窒化物系半導体発光素子、および窒化物系半導体発光素子を作製する方法

Country Status (7)

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US (1) US7973322B2 (ja)
EP (1) EP2056367A1 (ja)
JP (1) JP2009021361A (ja)
KR (1) KR20100031492A (ja)
CN (1) CN101548400B (ja)
TW (1) TW200903864A (ja)
WO (1) WO2009008202A1 (ja)

Cited By (3)

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Publication number Priority date Publication date Assignee Title
CN101826581A (zh) * 2009-03-02 2010-09-08 住友电气工业株式会社 氮化镓类半导体光元件及其制造方法、外延晶片
CN102034910A (zh) * 2009-09-30 2011-04-27 住友电气工业株式会社 Iii族氮化物半导体光元件、外延衬底及iii族氮化物半导体发光元件的制作方法
US8598599B2 (en) 2010-03-30 2013-12-03 Toyoda Gosei Co., Ltd. Group III nitride semiconductor light-emitting device

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JP2010118647A (ja) * 2008-10-17 2010-05-27 Sumitomo Electric Ind Ltd 窒化物系半導体発光素子、窒化物系半導体発光素子を作製する方法、及び発光装置
JP4905514B2 (ja) * 2009-07-15 2012-03-28 住友電気工業株式会社 窒化物系半導体発光素子
JP5635246B2 (ja) 2009-07-15 2014-12-03 住友電気工業株式会社 Ｉｉｉ族窒化物半導体光素子及びエピタキシャル基板
JP2011023537A (ja) 2009-07-15 2011-02-03 Sumitomo Electric Ind Ltd Ｉｉｉ族窒化物半導体素子、エピタキシャル基板、及びｉｉｉ族窒化物半導体素子を作製する方法
JP2010212651A (ja) * 2009-09-08 2010-09-24 Sumitomo Electric Ind Ltd Ｉｉｉ族窒化物半導体素子、エピタキシャル基板、及びｉｉｉ族窒化物半導体素子を作製する方法
KR100993072B1 (ko) * 2010-01-11 2010-11-08 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지
JP2011146650A (ja) * 2010-01-18 2011-07-28 Sumitomo Electric Ind Ltd ＧａＮ系半導体発光素子およびその製造方法
JP5349420B2 (ja) * 2010-08-04 2013-11-20 株式会社東芝 半導体発光素子の製造方法
JP5361925B2 (ja) * 2011-03-08 2013-12-04 株式会社東芝 半導体発光素子およびその製造方法
TWI524551B (zh) 2012-11-19 2016-03-01 新世紀光電股份有限公司 氮化物半導體結構及半導體發光元件
TWI499080B (zh) 2012-11-19 2015-09-01 Genesis Photonics Inc 氮化物半導體結構及半導體發光元件
TWI535055B (zh) 2012-11-19 2016-05-21 新世紀光電股份有限公司 氮化物半導體結構及半導體發光元件
CN108321268A (zh) * 2013-01-25 2018-07-24 新世纪光电股份有限公司 氮化物半导体结构及半导体发光元件
TWI593135B (zh) 2013-03-15 2017-07-21 索泰克公司 具有含氮化銦鎵之主動區域之半導體結構，形成此等半導體結構之方法，以及應用此等半導體結構形成之發光元件
FR3003397B1 (fr) * 2013-03-15 2016-07-22 Soitec Silicon On Insulator Structures semi-conductrices dotées de régions actives comprenant de l'INGAN
DE112014001423T5 (de) * 2013-03-15 2015-12-24 Soitec Halbleiterstrukturen mit InGaN umfassenden Aktivbereichen, Verfahren zum Bilden derartiger Halbleiterstrukturen und aus derartigen Halbleiterstrukturen gebildete Licht emittierende Vorrichtungen
CN104121497A (zh) * 2013-04-26 2014-10-29 光明半导体（天津）有限公司 照明装置
JP6641335B2 (ja) * 2017-10-27 2020-02-05 日機装株式会社 窒化物半導体発光素子及び窒化物半導体発光素子の製造方法
GB202000951D0 (en) * 2020-01-22 2020-03-04 Poro Tech Ltd Semiconductor device and method of manufacture
CN111916537A (zh) * 2020-09-24 2020-11-10 深圳市昂德环球科技有限公司 非极性AlGaN基深紫外LED外延片及制备方法

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101826581A (zh) * 2009-03-02 2010-09-08 住友电气工业株式会社 氮化镓类半导体光元件及其制造方法、外延晶片
CN102034910A (zh) * 2009-09-30 2011-04-27 住友电气工业株式会社 Iii族氮化物半导体光元件、外延衬底及iii族氮化物半导体发光元件的制作方法
US8598599B2 (en) 2010-03-30 2013-12-03 Toyoda Gosei Co., Ltd. Group III nitride semiconductor light-emitting device

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EP2056367A1 (en) 2009-05-06
CN101548400A (zh) 2009-09-30
CN101548400B (zh) 2011-12-07
US20100059759A1 (en) 2010-03-11
KR20100031492A (ko) 2010-03-22
TW200903864A (en) 2009-01-16
JP2009021361A (ja) 2009-01-29
US7973322B2 (en) 2011-07-05

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