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WO2009057254A1 - 半導体レーザ装置 - Google Patents

半導体レーザ装置 Download PDF

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Publication number
WO2009057254A1
WO2009057254A1 PCT/JP2008/002913 JP2008002913W WO2009057254A1 WO 2009057254 A1 WO2009057254 A1 WO 2009057254A1 JP 2008002913 W JP2008002913 W JP 2008002913W WO 2009057254 A1 WO2009057254 A1 WO 2009057254A1
Authority
WO
WIPO (PCT)
Prior art keywords
region
mqw
waveguide
activated layer
laser device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/002913
Other languages
English (en)
French (fr)
Inventor
Masao Kawaguchi
Masaaki Yuri
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Original Assignee
Panasonic Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Corp filed Critical Panasonic Corp
Priority to US12/513,482 priority Critical patent/US20100074290A1/en
Priority to JP2009514578A priority patent/JPWO2009057254A1/ja
Priority to EP08846061A priority patent/EP2216860A1/en
Publication of WO2009057254A1 publication Critical patent/WO2009057254A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H01S5/164—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface with window regions comprising semiconductor material with a wider bandgap than the active layer
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0207—Substrates having a special shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2304/00—Special growth methods for semiconductor lasers
    • H01S2304/12—Pendeo epitaxial lateral overgrowth [ELOG], e.g. for growing GaN based blue laser diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3202—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth
    • H01S5/3203—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth on non-planar substrates to create thickness or compositional variations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)

Abstract

　半導体レーザ装置は、基板（１）の主面上に形成され、III族窒化物半導体よりなるＭＱＷ活性層（５）を含む積層構造体を有している。積層構造体はその主面に形成されたストライプ状の導波路を有し、導波路の互いに対向する端面同士の一方が光出射端面である。凹部（２）の周囲には、ＭＱＷ活性層（５）における禁制帯幅がＥｇ１である第１の領域と、該第１の領域と隣接し且つＭＱＷ活性層（５）における禁制帯幅がＥｇ２（但し、Ｅｇ２≠Ｅｇ１）である第２の領域とが形成されている。導波路は、第１の領域及び第２の領域を含む一方、段差領域を含まないように形成され、光出射端面は第１の領域及び第２の領域のうち光吸収波長が短い領域（５ａ）に形成されている。
PCT/JP2008/002913 2007-11-02 2008-10-15 半導体レーザ装置 Ceased WO2009057254A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US12/513,482 US20100074290A1 (en) 2007-11-02 2008-10-15 Semiconductor laser device
JP2009514578A JPWO2009057254A1 (ja) 2007-11-02 2008-10-15 半導体レーザ装置
EP08846061A EP2216860A1 (en) 2007-11-02 2008-10-15 Semiconductor laser device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007285687 2007-11-02
JP2007-285687 2007-11-02

Publications (1)

Publication Number Publication Date
WO2009057254A1 true WO2009057254A1 (ja) 2009-05-07

Family

ID=40590661

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/002913 Ceased WO2009057254A1 (ja) 2007-11-02 2008-10-15 半導体レーザ装置

Country Status (5)

Country Link
US (1) US20100074290A1 (ja)
EP (1) EP2216860A1 (ja)
JP (1) JPWO2009057254A1 (ja)
CN (1) CN101558535A (ja)
WO (1) WO2009057254A1 (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010067500A1 (ja) * 2008-12-10 2010-06-17 パナソニック株式会社 半導体レーザ装置及びその製造方法
WO2011117940A1 (ja) * 2010-03-23 2011-09-29 パナソニック株式会社 半導体発光素子およびその製造方法
JP2013102249A (ja) * 2013-03-08 2013-05-23 Sony Corp 半導体レーザの製造方法

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4895993B2 (ja) * 2007-12-26 2012-03-14 ソニー株式会社 発光素子組立体及びその製造方法
JP5281842B2 (ja) * 2008-07-29 2013-09-04 パナソニック株式会社 半導体レーザ装置
JP2011228570A (ja) * 2010-04-22 2011-11-10 Renesas Electronics Corp 半導体レーザ及びその製造方法
JP6939120B2 (ja) * 2017-06-19 2021-09-22 住友電気工業株式会社 量子カスケード半導体レーザ、発光装置、半導体レーザを作製する方法
US11682881B2 (en) * 2020-03-09 2023-06-20 Microsoft Technology Licensing, Llc Broadened spectrum laser diode for display device
CN112290384A (zh) * 2020-12-29 2021-01-29 江西铭德半导体科技有限公司 边发射大功率激光器及其制造方法
DE102021113297A1 (de) 2021-05-21 2022-11-24 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur herstellung einer halbleiterlaserdiode und halbleiterlaserdiode

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63164288A (ja) 1986-12-25 1988-07-07 Mitsubishi Electric Corp 半導体レ−ザ装置の製造方法
JPS63196088A (ja) 1987-02-09 1988-08-15 Nec Corp 半導体レ−ザの製造方法
JPH06232509A (ja) * 1993-01-29 1994-08-19 Sanyo Electric Co Ltd 半導体レーザ、半導体レーザ装置及び光集積回路
JPH11204878A (ja) * 1998-01-09 1999-07-30 Sony Corp 半導体レーザ及びその製造方法
JP2003198057A (ja) * 2001-12-27 2003-07-11 Sony Corp 半導体レーザ素子及びその製造方法
JP2008244423A (ja) * 2007-02-28 2008-10-09 Sony Corp 半導体レーザの製造方法、半導体レーザ、光ピックアップ、光ディスク装置、半導体装置の製造方法、半導体装置および窒化物系ｉｉｉ−ｖ族化合物半導体層の成長方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3201475B2 (ja) * 1998-09-14 2001-08-20 松下電器産業株式会社 半導体装置およびその製造方法
JP3906654B2 (ja) * 2000-07-18 2007-04-18 ソニー株式会社 半導体発光素子及び半導体発光装置
JP2002076510A (ja) * 2000-08-23 2002-03-15 Sony Corp 半導体レーザおよびその製造方法
JP4963060B2 (ja) * 2005-11-30 2012-06-27 シャープ株式会社 窒化物系半導体レーザ素子及びその製造方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63164288A (ja) 1986-12-25 1988-07-07 Mitsubishi Electric Corp 半導体レ−ザ装置の製造方法
JPS63196088A (ja) 1987-02-09 1988-08-15 Nec Corp 半導体レ−ザの製造方法
JPH06232509A (ja) * 1993-01-29 1994-08-19 Sanyo Electric Co Ltd 半導体レーザ、半導体レーザ装置及び光集積回路
JPH11204878A (ja) * 1998-01-09 1999-07-30 Sony Corp 半導体レーザ及びその製造方法
JP2003198057A (ja) * 2001-12-27 2003-07-11 Sony Corp 半導体レーザ素子及びその製造方法
JP2008244423A (ja) * 2007-02-28 2008-10-09 Sony Corp 半導体レーザの製造方法、半導体レーザ、光ピックアップ、光ディスク装置、半導体装置の製造方法、半導体装置および窒化物系ｉｉｉ−ｖ族化合物半導体層の成長方法

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010067500A1 (ja) * 2008-12-10 2010-06-17 パナソニック株式会社 半導体レーザ装置及びその製造方法
JP2010141012A (ja) * 2008-12-10 2010-06-24 Panasonic Corp 半導体レーザ装置及びその製造方法
US8422526B2 (en) 2008-12-10 2013-04-16 Panasonic Corporation Semiconductor laser device and method for manufacturing the same
WO2011117940A1 (ja) * 2010-03-23 2011-09-29 パナソニック株式会社 半導体発光素子およびその製造方法
CN102804416A (zh) * 2010-03-23 2012-11-28 松下电器产业株式会社 半导体发光元件及其制造方法
US8569088B2 (en) 2010-03-23 2013-10-29 Panasonic Corporation Semiconductor light-emitting element and manufacturing method thereof
JP5595483B2 (ja) * 2010-03-23 2014-09-24 パナソニック株式会社 半導体発光素子およびその製造方法
CN102804416B (zh) * 2010-03-23 2015-04-15 松下电器产业株式会社 半导体发光元件及其制造方法
JP2013102249A (ja) * 2013-03-08 2013-05-23 Sony Corp 半導体レーザの製造方法

Also Published As

Publication number Publication date
EP2216860A1 (en) 2010-08-11
US20100074290A1 (en) 2010-03-25
CN101558535A (zh) 2009-10-14
JPWO2009057254A1 (ja) 2011-03-10

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