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WO2008111344A1 - 分布帰還型半導体レーザ素子 - Google Patents

分布帰還型半導体レーザ素子 Download PDF

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Publication number
WO2008111344A1
WO2008111344A1 PCT/JP2008/052031 JP2008052031W WO2008111344A1 WO 2008111344 A1 WO2008111344 A1 WO 2008111344A1 JP 2008052031 W JP2008052031 W JP 2008052031W WO 2008111344 A1 WO2008111344 A1 WO 2008111344A1
Authority
WO
WIPO (PCT)
Prior art keywords
laser element
layer
active layer
waveguide layer
waveguide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/052031
Other languages
English (en)
French (fr)
Inventor
Koji Nakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to US12/529,029 priority Critical patent/US20100074291A1/en
Publication of WO2008111344A1 publication Critical patent/WO2008111344A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06226—Modulation at ultra-high frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

　反射戻り光の影響を低減でき且つ出力特性を向上させることができ、光モジュールに搭載した場合に小型且つ低価格な光モジュールを実現することができるＤＦＢレーザ素子を提供する。ＧＣ型のＤＦＢレーザ素子（１０）は、半導体基板（１００）と、この半導体基板の１つの面側に形成された導波路層（１０４）及び活性層（１０６）と、導波路層の１つの面に形成され、光の導波方向に利得が周期的に変化する回折格子構造（１０２）とを備え、活性層は、導波路層に隣接して配置されており、導波路層のバンドギャップ波長は、活性層の発振波長の±０．１μｍ以内であり、導波路層の厚みは、５ｎｍ～３０ｎｍの範囲内であり、活性層の幅は、０．７μｍ～１．０μｍの範囲内である。  
PCT/JP2008/052031 2007-03-15 2008-02-07 分布帰還型半導体レーザ素子 Ceased WO2008111344A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US12/529,029 US20100074291A1 (en) 2007-03-15 2008-02-07 Distributed Feedback Semiconductor Laser Device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-066693 2007-03-15
JP2007066693A JP2008227367A (ja) 2007-03-15 2007-03-15 分布帰還型半導体レーザ素子

Publications (1)

Publication Number Publication Date
WO2008111344A1 true WO2008111344A1 (ja) 2008-09-18

Family

ID=39759287

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/052031 Ceased WO2008111344A1 (ja) 2007-03-15 2008-02-07 分布帰還型半導体レーザ素子

Country Status (3)

Country Link
US (1) US20100074291A1 (ja)
JP (1) JP2008227367A (ja)
WO (1) WO2008111344A1 (ja)

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US9134807B2 (en) 2012-03-02 2015-09-15 Microsoft Technology Licensing, Llc Pressure sensitive key normalization
US20130300590A1 (en) 2012-05-14 2013-11-14 Paul Henry Dietz Audio Feedback
US9553670B2 (en) * 2014-03-03 2017-01-24 Inphi Corporation Optical module
US9304235B2 (en) 2014-07-30 2016-04-05 Microsoft Technology Licensing, Llc Microfabrication
US10324733B2 (en) 2014-07-30 2019-06-18 Microsoft Technology Licensing, Llc Shutdown notifications
US10254942B2 (en) 2014-07-31 2019-04-09 Microsoft Technology Licensing, Llc Adaptive sizing and positioning of application windows
US10592080B2 (en) 2014-07-31 2020-03-17 Microsoft Technology Licensing, Llc Assisted presentation of application windows
US10678412B2 (en) 2014-07-31 2020-06-09 Microsoft Technology Licensing, Llc Dynamic joint dividers for application windows
US9787576B2 (en) 2014-07-31 2017-10-10 Microsoft Technology Licensing, Llc Propagating routing awareness for autonomous networks
US10018844B2 (en) 2015-02-09 2018-07-10 Microsoft Technology Licensing, Llc Wearable image display system
US9535253B2 (en) 2015-02-09 2017-01-03 Microsoft Technology Licensing, Llc Display system
US9827209B2 (en) 2015-02-09 2017-11-28 Microsoft Technology Licensing, Llc Display system
US9429692B1 (en) 2015-02-09 2016-08-30 Microsoft Technology Licensing, Llc Optical components
US9513480B2 (en) 2015-02-09 2016-12-06 Microsoft Technology Licensing, Llc Waveguide
US9423360B1 (en) 2015-02-09 2016-08-23 Microsoft Technology Licensing, Llc Optical components
US10317677B2 (en) 2015-02-09 2019-06-11 Microsoft Technology Licensing, Llc Display system
US9372347B1 (en) 2015-02-09 2016-06-21 Microsoft Technology Licensing, Llc Display system
US11086216B2 (en) 2015-02-09 2021-08-10 Microsoft Technology Licensing, Llc Generating electronic components
US10686297B2 (en) * 2015-03-06 2020-06-16 Stmicroelectronics (Crolles 2) Sas Germanium-on-silicon laser in CMOS technology

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60145685A (ja) * 1984-01-09 1985-08-01 Nec Corp 分布帰還型半導体レ−ザ
JPH08242035A (ja) * 1995-02-16 1996-09-17 At & T Corp 損失結合を有するｄｆｂレーザを含む製品
JPH08274406A (ja) * 1994-09-28 1996-10-18 Matsushita Electric Ind Co Ltd 分布帰還型半導体レーザ装置及びその製造方法
JPH1187838A (ja) * 1997-09-10 1999-03-30 Nec Corp 分布帰還型半導体レーザ及びその製造方法
JPH11195838A (ja) * 1997-11-07 1999-07-21 Nippon Telegr & Teleph Corp <Ntt> 分布帰還型半導体レーザ
JP2000137126A (ja) * 1998-10-30 2000-05-16 Toshiba Corp 光機能素子
JP2001332809A (ja) * 2000-03-17 2001-11-30 Fujitsu Ltd 分布帰還型半導体レーザとその製造方法
JP2002305350A (ja) * 2001-01-31 2002-10-18 Furukawa Electric Co Ltd:The 分布帰還型半導体レーザ素子及びその作製方法
JP2003142773A (ja) * 2001-11-02 2003-05-16 Fujitsu Ltd 半導体発光装置
JP2003522404A (ja) * 1998-12-15 2003-07-22 ノーテル・ネットワークス・リミテッド 強い複合結合型ｄｆｂレーザを使用する短い光パルスの発生

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02294090A (ja) * 1989-05-08 1990-12-05 Oki Electric Ind Co Ltd 半導体レーザ素子及びその製造方法
EP1130715A2 (en) * 1994-09-28 2001-09-05 Matsushita Electric Industrial Co., Ltd. Dsistributed feedback semiconductor laser and method for producing the same
JPH09312437A (ja) * 1996-05-24 1997-12-02 Matsushita Electric Ind Co Ltd 半導体レーザおよびその製造方法
JP3387746B2 (ja) * 1996-07-31 2003-03-17 キヤノン株式会社 屈曲チャンネルストライプの偏波変調可能な半導体レーザ
JP2000133599A (ja) * 1998-10-23 2000-05-12 Oki Electric Ind Co Ltd 結晶成長方法及び、これを用いた半導体レーザの製造方法
US6650673B2 (en) * 1998-12-15 2003-11-18 Bookham Technology, Plc Generation of short optical pulses using strongly complex coupled DFB lasers
JP5099948B2 (ja) * 2001-08-28 2012-12-19 古河電気工業株式会社 分布帰還型半導体レーザ素子

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60145685A (ja) * 1984-01-09 1985-08-01 Nec Corp 分布帰還型半導体レ−ザ
JPH08274406A (ja) * 1994-09-28 1996-10-18 Matsushita Electric Ind Co Ltd 分布帰還型半導体レーザ装置及びその製造方法
JPH08242035A (ja) * 1995-02-16 1996-09-17 At & T Corp 損失結合を有するｄｆｂレーザを含む製品
JPH1187838A (ja) * 1997-09-10 1999-03-30 Nec Corp 分布帰還型半導体レーザ及びその製造方法
JPH11195838A (ja) * 1997-11-07 1999-07-21 Nippon Telegr & Teleph Corp <Ntt> 分布帰還型半導体レーザ
JP2000137126A (ja) * 1998-10-30 2000-05-16 Toshiba Corp 光機能素子
JP2003522404A (ja) * 1998-12-15 2003-07-22 ノーテル・ネットワークス・リミテッド 強い複合結合型ｄｆｂレーザを使用する短い光パルスの発生
JP2001332809A (ja) * 2000-03-17 2001-11-30 Fujitsu Ltd 分布帰還型半導体レーザとその製造方法
JP2002305350A (ja) * 2001-01-31 2002-10-18 Furukawa Electric Co Ltd:The 分布帰還型半導体レーザ素子及びその作製方法
JP2003142773A (ja) * 2001-11-02 2003-05-16 Fujitsu Ltd 半導体発光装置

Also Published As

Publication number Publication date
JP2008227367A (ja) 2008-09-25
US20100074291A1 (en) 2010-03-25

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