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WO2009078172A1 - 不揮発性記憶素子およびその製造方法、並びにその不揮発性記憶素子を用いた不揮発性記憶装置 - Google Patents

不揮発性記憶素子およびその製造方法、並びにその不揮発性記憶素子を用いた不揮発性記憶装置 Download PDF

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Publication number
WO2009078172A1
WO2009078172A1 PCT/JP2008/003798 JP2008003798W WO2009078172A1 WO 2009078172 A1 WO2009078172 A1 WO 2009078172A1 JP 2008003798 W JP2008003798 W JP 2008003798W WO 2009078172 A1 WO2009078172 A1 WO 2009078172A1
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WO
WIPO (PCT)
Prior art keywords
nonvolatile memory
memory element
electrode layer
tantalum
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/003798
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English (en)
French (fr)
Inventor
Satoru Fujii
Takeshi Takagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Original Assignee
Panasonic Corp
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Filing date
Publication date
Application filed by Panasonic Corp filed Critical Panasonic Corp
Publication of WO2009078172A1 publication Critical patent/WO2009078172A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0007—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising metal oxide memory material, e.g. perovskites
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H10B63/84—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays arranged in a direction perpendicular to the substrate, e.g. 3D cell arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of switching materials, e.g. deposition of layers
    • H10N70/026—Formation of switching materials, e.g. deposition of layers by physical vapor deposition, e.g. sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H10N70/8833—Binary metal oxides, e.g. TaOx
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/30—Resistive cell, memory material aspects
    • G11C2213/31—Material having complex metal oxide, e.g. perovskite structure
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/71—Three dimensional array
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/72—Array wherein the access device being a diode

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Semiconductor Memories (AREA)

Abstract

　高速動作が可能で、しかも可逆的に安定した書き換え特性と、良好な抵抗値のリテンション特性を有する不揮発性記憶素子およびその製造方法、並びにその不揮発性記憶素子を用いた不揮発性記憶装置を提供する。第１電極層(１０３)と、第２電極層(１０５)と、第１電極層(１０３)と第２電極層(１０５)との間に介在させ、第１電極層(１０３)と第２電極層(１０５)との間に与えられる電気的信号に基づいて可逆的に抵抗値が変化する抵抗変化層(１０４)とを備え、抵抗変化層(１０４)は少なくともタンタルと異なる遷移金属酸化物を含むタンタル酸化物を含み、当該タンタルと異なる遷移金属酸化物を含むタンタル酸化物をＴａxＭyＯzと表した場合に、０<ｙ／ｘ<１、かつ０.５≦ｚ／(ｘ+ｙ)≦１.９を満足するように抵抗変化層(１０４)が構成されている。
PCT/JP2008/003798 2007-12-17 2008-12-16 不揮発性記憶素子およびその製造方法、並びにその不揮発性記憶素子を用いた不揮発性記憶装置 Ceased WO2009078172A1 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007324340A JP2011044443A (ja) 2007-12-17 2007-12-17 不揮発性記憶素子およびその製造方法、並びにその不揮発性記憶素子を用いた不揮発性半導体装置
JP2007-324340 2007-12-17

Publications (1)

Publication Number Publication Date
WO2009078172A1 true WO2009078172A1 (ja) 2009-06-25

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PCT/JP2008/003798 Ceased WO2009078172A1 (ja) 2007-12-17 2008-12-16 不揮発性記憶素子およびその製造方法、並びにその不揮発性記憶素子を用いた不揮発性記憶装置

Country Status (2)

Country Link
JP (1) JP2011044443A (ja)
WO (1) WO2009078172A1 (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009154266A1 (ja) * 2008-06-20 2009-12-23 日本電気株式会社 半導体記憶装置及びその動作方法
JP2011040579A (ja) * 2009-08-11 2011-02-24 Toshiba Corp 抵抗変化メモリ
JP2011091325A (ja) * 2009-10-26 2011-05-06 Sony Corp 記憶装置及びその製造方法
JP2013038264A (ja) * 2011-08-09 2013-02-21 Toshiba Corp 抵抗変化メモリ

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120327714A1 (en) * 2011-06-23 2012-12-27 Macronix International Co., Ltd. Memory Architecture of 3D Array With Diode in Memory String

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006073875A (ja) * 2004-09-03 2006-03-16 Toshiba Corp 磁気抵抗効果素子、磁気ヘッド、磁気記録再生装置、および磁気メモリ
US20070133358A1 (en) * 2005-12-13 2007-06-14 Koichi Kubo Data read/ write device
WO2007138646A1 (ja) * 2006-05-25 2007-12-06 Hitachi, Ltd. 不揮発性メモリ素子およびその製造方法ならびに不揮発性メモリ素子を用いた半導体装置
JP2007536680A (ja) * 2004-05-03 2007-12-13 ユニティ・セミコンダクター・コーポレーション 不揮発性プログラマブルメモリ

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007536680A (ja) * 2004-05-03 2007-12-13 ユニティ・セミコンダクター・コーポレーション 不揮発性プログラマブルメモリ
JP2006073875A (ja) * 2004-09-03 2006-03-16 Toshiba Corp 磁気抵抗効果素子、磁気ヘッド、磁気記録再生装置、および磁気メモリ
US20070133358A1 (en) * 2005-12-13 2007-06-14 Koichi Kubo Data read/ write device
WO2007138646A1 (ja) * 2006-05-25 2007-12-06 Hitachi, Ltd. 不揮発性メモリ素子およびその製造方法ならびに不揮発性メモリ素子を用いた半導体装置

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009154266A1 (ja) * 2008-06-20 2009-12-23 日本電気株式会社 半導体記憶装置及びその動作方法
JP2011040579A (ja) * 2009-08-11 2011-02-24 Toshiba Corp 抵抗変化メモリ
JP2011091325A (ja) * 2009-10-26 2011-05-06 Sony Corp 記憶装置及びその製造方法
JP2013038264A (ja) * 2011-08-09 2013-02-21 Toshiba Corp 抵抗変化メモリ

Also Published As

Publication number Publication date
JP2011044443A (ja) 2011-03-03

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