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WO2009072213A1 - 抵抗変化型メモリ装置、不揮発性メモリ装置、およびその製造方法 - Google Patents

抵抗変化型メモリ装置、不揮発性メモリ装置、およびその製造方法 Download PDF

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Publication number
WO2009072213A1
WO2009072213A1 PCT/JP2007/073708 JP2007073708W WO2009072213A1 WO 2009072213 A1 WO2009072213 A1 WO 2009072213A1 JP 2007073708 W JP2007073708 W JP 2007073708W WO 2009072213 A1 WO2009072213 A1 WO 2009072213A1
Authority
WO
WIPO (PCT)
Prior art keywords
memory device
resistance change
type memory
manufacturing
oxide film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2007/073708
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English (en)
French (fr)
Inventor
Koji Tsunoda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP2009544546A priority Critical patent/JP5170107B2/ja
Priority to PCT/JP2007/073708 priority patent/WO2009072213A1/ja
Publication of WO2009072213A1 publication Critical patent/WO2009072213A1/ja
Priority to US12/793,270 priority patent/US8338814B2/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0007—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising metal oxide memory material, e.g. perovskites
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0011—RRAM elements whose operation depends upon chemical change comprising conductive bridging RAM [CBRAM] or programming metallization cells [PMCs]
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of switching materials, e.g. deposition of layers
    • H10N70/026—Formation of switching materials, e.g. deposition of layers by physical vapor deposition, e.g. sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/041—Modification of switching materials after formation, e.g. doping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Shaping switching materials
    • H10N70/063—Shaping switching materials by etching of pre-deposited switching material layers, e.g. lithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H10N70/8833—Binary metal oxides, e.g. TaOx
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G11C2013/0083—Write to perform initialising, forming process, electro forming or conditioning
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G11C2013/009—Write using potential difference applied between cell electrodes
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/30—Resistive cell, memory material aspects
    • G11C2213/32—Material having simple binary metal oxide structure
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/30—Resistive cell, memory material aspects
    • G11C2213/34—Material includes an oxide or a nitride
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/50—Resistive cell structure aspects
    • G11C2213/56—Structure including two electrodes, a memory active layer and a so called passive or source or reservoir layer which is NOT an electrode, wherein the passive or source or reservoir layer is a source of ions which migrate afterwards in the memory active layer to be only trapped there, to form conductive filaments there or to react with the material of the memory active layer in redox way

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Semiconductor Memories (AREA)

Abstract

　抵抗変化型メモリ装置は、下部電極と、前記下部電極上に形成され、抵抗値を変化させうる金属酸化物膜と、前記金属酸化物膜上に形成された上部電極と、 を備え、前記金属酸化物膜は、該金属酸化物膜を構成する金属元素を含む第１の部位と、該第１の部位より酸素を多く含む第２の部位を有する。
PCT/JP2007/073708 2007-12-07 2007-12-07 抵抗変化型メモリ装置、不揮発性メモリ装置、およびその製造方法 Ceased WO2009072213A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2009544546A JP5170107B2 (ja) 2007-12-07 2007-12-07 抵抗変化型メモリ装置、不揮発性メモリ装置、およびその製造方法
PCT/JP2007/073708 WO2009072213A1 (ja) 2007-12-07 2007-12-07 抵抗変化型メモリ装置、不揮発性メモリ装置、およびその製造方法
US12/793,270 US8338814B2 (en) 2007-12-07 2010-06-03 Resistive random access memory, nonvolatile memory, and method of manufacturing resistive random access memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2007/073708 WO2009072213A1 (ja) 2007-12-07 2007-12-07 抵抗変化型メモリ装置、不揮発性メモリ装置、およびその製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/793,270 Continuation US8338814B2 (en) 2007-12-07 2010-06-03 Resistive random access memory, nonvolatile memory, and method of manufacturing resistive random access memory

Publications (1)

Publication Number Publication Date
WO2009072213A1 true WO2009072213A1 (ja) 2009-06-11

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PCT/JP2007/073708 Ceased WO2009072213A1 (ja) 2007-12-07 2007-12-07 抵抗変化型メモリ装置、不揮発性メモリ装置、およびその製造方法

Country Status (3)

Country Link
US (1) US8338814B2 (ja)
JP (1) JP5170107B2 (ja)
WO (1) WO2009072213A1 (ja)

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WO2009125777A1 (ja) * 2008-04-07 2009-10-15 日本電気株式会社 抵抗変化素子及びその製造方法
WO2010021134A1 (ja) * 2008-08-20 2010-02-25 パナソニック株式会社 抵抗変化型不揮発性記憶装置およびメモリセルの形成方法
JP2010135541A (ja) * 2008-12-04 2010-06-17 Sharp Corp 可変抵抗素子並びにその製造方法
WO2010109876A1 (ja) * 2009-03-25 2010-09-30 パナソニック株式会社 抵抗変化素子の駆動方法及び不揮発性記憶装置
JP2011066285A (ja) * 2009-09-18 2011-03-31 Toshiba Corp 不揮発性記憶素子および不揮発性記憶装置
WO2011052239A1 (ja) * 2009-11-02 2011-05-05 パナソニック株式会社 抵抗変化型不揮発性記憶装置およびメモリセルの形成方法
CN102214790A (zh) * 2011-06-10 2011-10-12 清华大学 一种具有自整流效应的阻变存储器
JP2012507856A (ja) * 2008-10-29 2012-03-29 ヒューレット−パッカード デベロップメント カンパニー エル．ピー． 電気的に作動するデバイス及びそのデバイスにおけるドーパントの形成を制御する方法
WO2012042897A1 (ja) * 2010-10-01 2012-04-05 パナソニック株式会社 不揮発性記憶素子の製造方法および不揮発性記憶素子
JP5459515B2 (ja) * 2009-02-20 2014-04-02 株式会社村田製作所 抵抗記憶素子およびその使用方法
US9018083B2 (en) 2011-05-04 2015-04-28 Hewlett-Packard Development Company, L.P. Electrically actuated device and method of controlling the formation of dopants therein
KR20150047562A (ko) * 2012-08-21 2015-05-04 마이크론 테크놀로지, 인크. 단극성 메모리 디바이스들
US10453523B2 (en) 2016-04-21 2019-10-22 Tdk Corporation Magnetic wall utilization-analog memory element and magnetic wall utilization analog memory
US10482987B2 (en) 2016-04-21 2019-11-19 Tdk Corporation Magnetic wall utilization spin MOSFET and magnetic wall utilization analog memory
US10553299B2 (en) 2017-04-14 2020-02-04 Tdk Corporation Magnetic domain wall type analog memory element, magnetic domain wall type analog memory, nonvolatile logic circuit, and magnetic neuro-element
US10672446B2 (en) 2016-06-10 2020-06-02 Tdk Corporation Exchange bias utilization type magnetization rotational element, exchange bias utilization type magnetoresistance effect element, exchange bias utilization type magnetic memory, non-volatile logic circuit, and magnetic neuron element
US10916480B2 (en) 2017-04-14 2021-02-09 Tdk Corporation Magnetic wall utilization type analog memory device, magnetic wall utilization type analog memory, nonvolatile logic circuit, and magnetic neuro device

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KR20100062570A (ko) * 2008-12-02 2010-06-10 삼성전자주식회사 저항성 메모리 소자
JP2013004655A (ja) * 2011-06-15 2013-01-07 Sharp Corp 不揮発性半導体記憶装置およびその製造方法
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US8896096B2 (en) * 2012-07-19 2014-11-25 Taiwan Semiconductor Manufacturing Company, Ltd. Process-compatible decoupling capacitor and method for making the same
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US9130162B2 (en) * 2012-12-20 2015-09-08 Taiwan Semiconductor Manufacturing Company, Ltd. Resistance variable memory structure and method of forming the same
JP6021688B2 (ja) * 2013-02-25 2016-11-09 ルネサスエレクトロニクス株式会社 半導体装置およびその制御方法
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US10128438B2 (en) 2016-09-09 2018-11-13 Arm Limited CEM switching device
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WO2009125777A1 (ja) * 2008-04-07 2009-10-15 日本電気株式会社 抵抗変化素子及びその製造方法
US8373149B2 (en) 2008-04-07 2013-02-12 Nec Corporation Resistance change element and manufacturing method thereof
JPWO2010021134A1 (ja) * 2008-08-20 2012-01-26 パナソニック株式会社 抵抗変化型不揮発性記憶装置
JP4555397B2 (ja) * 2008-08-20 2010-09-29 パナソニック株式会社 抵抗変化型不揮発性記憶装置
US8553444B2 (en) 2008-08-20 2013-10-08 Panasonic Corporation Variable resistance nonvolatile storage device and method of forming memory cell
WO2010021134A1 (ja) * 2008-08-20 2010-02-25 パナソニック株式会社 抵抗変化型不揮発性記憶装置およびメモリセルの形成方法
US8830730B2 (en) 2008-08-20 2014-09-09 Panasonic Corporation Variable resistance nonvolatile storage device and method of forming memory cell
JP2012507856A (ja) * 2008-10-29 2012-03-29 ヒューレット−パッカード デベロップメント カンパニー エル．ピー． 電気的に作動するデバイス及びそのデバイスにおけるドーパントの形成を制御する方法
US8766228B2 (en) 2008-10-29 2014-07-01 Hewlett-Packard Development Company, L.P. Electrically actuated device and method of controlling the formation of dopants therein
JP2010135541A (ja) * 2008-12-04 2010-06-17 Sharp Corp 可変抵抗素子並びにその製造方法
JP5459515B2 (ja) * 2009-02-20 2014-04-02 株式会社村田製作所 抵抗記憶素子およびその使用方法
US8279658B2 (en) 2009-03-25 2012-10-02 Panasonic Corporation Method of programming variable resistance element and nonvolatile storage device
US8395930B2 (en) 2009-03-25 2013-03-12 Panasonic Corporation Method of programming variable resistance element and nonvolatile storage device
WO2010109876A1 (ja) * 2009-03-25 2010-09-30 パナソニック株式会社 抵抗変化素子の駆動方法及び不揮発性記憶装置
JP2011066285A (ja) * 2009-09-18 2011-03-31 Toshiba Corp 不揮発性記憶素子および不揮発性記憶装置
US8450715B2 (en) 2009-09-18 2013-05-28 Kabushiki Kaisha Toshiba Nonvolatile metal oxide memory element and nonvolatile memory device
WO2011052239A1 (ja) * 2009-11-02 2011-05-05 パナソニック株式会社 抵抗変化型不揮発性記憶装置およびメモリセルの形成方法
WO2012042897A1 (ja) * 2010-10-01 2012-04-05 パナソニック株式会社 不揮発性記憶素子の製造方法および不揮発性記憶素子
JP5270044B2 (ja) * 2010-10-01 2013-08-21 パナソニック株式会社 不揮発性記憶素子の製造方法および不揮発性記憶素子
US9018083B2 (en) 2011-05-04 2015-04-28 Hewlett-Packard Development Company, L.P. Electrically actuated device and method of controlling the formation of dopants therein
CN102214790A (zh) * 2011-06-10 2011-10-12 清华大学 一种具有自整流效应的阻变存储器
KR20150047562A (ko) * 2012-08-21 2015-05-04 마이크론 테크놀로지, 인크. 단극성 메모리 디바이스들
JP2015534259A (ja) * 2012-08-21 2015-11-26 マイクロン テクノロジー， インク． 単極メモリデバイス
KR102165139B1 (ko) * 2012-08-21 2020-10-15 마이크론 테크놀로지, 인크. 단극성 메모리 디바이스들
US10453523B2 (en) 2016-04-21 2019-10-22 Tdk Corporation Magnetic wall utilization-analog memory element and magnetic wall utilization analog memory
US10482987B2 (en) 2016-04-21 2019-11-19 Tdk Corporation Magnetic wall utilization spin MOSFET and magnetic wall utilization analog memory
US10892009B2 (en) 2016-04-21 2021-01-12 Tdk Corporation Magnetic wall utilization-analog memory element and magnetic wall utilization analog memory
US10672446B2 (en) 2016-06-10 2020-06-02 Tdk Corporation Exchange bias utilization type magnetization rotational element, exchange bias utilization type magnetoresistance effect element, exchange bias utilization type magnetic memory, non-volatile logic circuit, and magnetic neuron element
US10553299B2 (en) 2017-04-14 2020-02-04 Tdk Corporation Magnetic domain wall type analog memory element, magnetic domain wall type analog memory, nonvolatile logic circuit, and magnetic neuro-element
US10839930B2 (en) 2017-04-14 2020-11-17 Tdk Corporation Magnetic domain wall type analog memory element, magnetic domain wall type analog memory, nonvolatile logic circuit, and magnetic neuro-element
US10916480B2 (en) 2017-04-14 2021-02-09 Tdk Corporation Magnetic wall utilization type analog memory device, magnetic wall utilization type analog memory, nonvolatile logic circuit, and magnetic neuro device

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