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WO2010126232A3 - 저항변화 메모리 소자 및 이의 제조방법 - Google Patents

저항변화 메모리 소자 및 이의 제조방법 Download PDF

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Publication number
WO2010126232A3
WO2010126232A3 PCT/KR2010/002153 KR2010002153W WO2010126232A3 WO 2010126232 A3 WO2010126232 A3 WO 2010126232A3 KR 2010002153 W KR2010002153 W KR 2010002153W WO 2010126232 A3 WO2010126232 A3 WO 2010126232A3
Authority
WO
WIPO (PCT)
Prior art keywords
resistance
memory device
production method
method therefor
variable memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2010/002153
Other languages
English (en)
French (fr)
Other versions
WO2010126232A2 (ko
Inventor
홍진표
도영호
곽준식
배윤철
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Industry University Cooperation Foundation IUCF HYU
Original Assignee
Industry University Cooperation Foundation IUCF HYU
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Industry University Cooperation Foundation IUCF HYU filed Critical Industry University Cooperation Foundation IUCF HYU
Priority to US13/318,024 priority Critical patent/US8749023B2/en
Publication of WO2010126232A2 publication Critical patent/WO2010126232A2/ko
Publication of WO2010126232A3 publication Critical patent/WO2010126232A3/ko
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of switching materials, e.g. deposition of layers
    • H10N70/026—Formation of switching materials, e.g. deposition of layers by physical vapor deposition, e.g. sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/041—Modification of switching materials after formation, e.g. doping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H10N70/8833—Binary metal oxides, e.g. TaOx

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Memories (AREA)

Abstract

비휘발성 메모리 소자인 ReRAM 및 이의 제조방법이 개시된다. 인가되는 펄스에 따라 저항 상태의 변화를 수행하는 저항 변화층은 3 층의 산화막들의 적층구조를 가진다. 각각의 산화막들은 인접한 산화막과 동종의 산화막들로 구성되지만, 인접한 산화막들은 상호간에 서로 다른 산소의 조성비를 가진다.
PCT/KR2010/002153 2009-04-28 2010-04-08 저항변화 메모리 소자 및 이의 제조방법 Ceased WO2010126232A2 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US13/318,024 US8749023B2 (en) 2009-04-28 2010-04-08 Resistance-variable memory device and a production method therefor

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2009-0037123 2009-04-28
KR1020090037123A KR101105981B1 (ko) 2009-04-28 2009-04-28 저항변화 메모리 소자 및 이의 제조방법

Publications (2)

Publication Number Publication Date
WO2010126232A2 WO2010126232A2 (ko) 2010-11-04
WO2010126232A3 true WO2010126232A3 (ko) 2011-01-06

Family

ID=43032648

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2010/002153 Ceased WO2010126232A2 (ko) 2009-04-28 2010-04-08 저항변화 메모리 소자 및 이의 제조방법

Country Status (3)

Country Link
US (1) US8749023B2 (ko)
KR (1) KR101105981B1 (ko)
WO (1) WO2010126232A2 (ko)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9024285B2 (en) * 2010-04-19 2015-05-05 Hewlett-Packard Development Company, L.P. Nanoscale switching devices with partially oxidized electrodes
KR101285903B1 (ko) * 2011-09-27 2013-07-23 한양대학교 산학협력단 자체 선택 특성을 가지는 3층 저항변화 메모리 및 이의 제조방법
KR20130106659A (ko) 2012-03-20 2013-09-30 에스케이하이닉스 주식회사 멀티 레벨을 갖는 상변화 메모리 장치 및 그 제조방법
KR101487626B1 (ko) * 2013-11-28 2015-01-29 포항공과대학교 산학협력단 비휘발성 메모리 소자 및 그 제조방법
US9246087B1 (en) * 2014-11-24 2016-01-26 Intermolecular, Inc. Electron barrier height controlled interfaces of resistive switching layers in resistive random access memory cells
TWI559519B (zh) * 2015-02-16 2016-11-21 國立清華大學 電阻式記憶體
US10164179B2 (en) * 2017-01-13 2018-12-25 International Business Machines Corporation Memristive device based on alkali-doping of transitional metal oxides
CN109585647B (zh) * 2018-10-22 2022-10-14 西安理工大学 氧化镍/氧化钛/氧化镍多层异质结忆阻器的制备方法
CN110379921B (zh) * 2019-07-25 2023-03-24 陕西科技大学 一种基于全无机钙钛矿薄膜的柔性多态阻变存储器及其一步溶液法制备方法
CN117572979A (zh) 2023-11-14 2024-02-20 厦门天马微电子有限公司 一种触控显示模组及其制备方法、触控显示装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20050105297A (ko) * 2004-04-28 2005-11-04 삼성전자주식회사 저항 구배를 지닌 다층막을 이용한 메모리 소자
KR20060023860A (ko) * 2004-09-10 2006-03-15 삼성전자주식회사 전이금속 산화막을 데이터 저장 물질막으로 채택하는비휘발성 기억 셀들 및 그 제조방법들
KR20060083368A (ko) * 2005-01-14 2006-07-20 광주과학기술원 산화막의 저항변화를 이용한 비휘발성 기억소자 및 그제조방법
KR20070005040A (ko) * 2005-07-05 2007-01-10 삼성전자주식회사 단위 셀 구조물과 그 제조 방법 및 이를 갖는 비휘발성메모리 소자 및 그 제조 방법

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7148126B2 (en) * 2002-06-25 2006-12-12 Sanken Electric Co., Ltd. Semiconductor device manufacturing method and ring-shaped reinforcing member
US6774054B1 (en) 2003-08-13 2004-08-10 Sharp Laboratories Of America, Inc. High temperature annealing of spin coated Pr1-xCaxMnO3 thim film for RRAM application
KR100724528B1 (ko) 2005-04-04 2007-06-04 한국과학기술연구원 저항변화 기억소자용 박막 구조물 및 그 제조 방법

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20050105297A (ko) * 2004-04-28 2005-11-04 삼성전자주식회사 저항 구배를 지닌 다층막을 이용한 메모리 소자
KR20060023860A (ko) * 2004-09-10 2006-03-15 삼성전자주식회사 전이금속 산화막을 데이터 저장 물질막으로 채택하는비휘발성 기억 셀들 및 그 제조방법들
KR20060083368A (ko) * 2005-01-14 2006-07-20 광주과학기술원 산화막의 저항변화를 이용한 비휘발성 기억소자 및 그제조방법
KR20070005040A (ko) * 2005-07-05 2007-01-10 삼성전자주식회사 단위 셀 구조물과 그 제조 방법 및 이를 갖는 비휘발성메모리 소자 및 그 제조 방법

Also Published As

Publication number Publication date
US8749023B2 (en) 2014-06-10
WO2010126232A2 (ko) 2010-11-04
KR101105981B1 (ko) 2012-01-18
US20120049147A1 (en) 2012-03-01
KR20100118341A (ko) 2010-11-05

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