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WO2009057558A1 - レーザ加工方法 - Google Patents

レーザ加工方法 Download PDF

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Publication number
WO2009057558A1
WO2009057558A1 PCT/JP2008/069462 JP2008069462W WO2009057558A1 WO 2009057558 A1 WO2009057558 A1 WO 2009057558A1 JP 2008069462 W JP2008069462 W JP 2008069462W WO 2009057558 A1 WO2009057558 A1 WO 2009057558A1
Authority
WO
WIPO (PCT)
Prior art keywords
gaas substrate
modified region
processing method
laser processing
laser beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/069462
Other languages
English (en)
French (fr)
Inventor
Masayoshi Kumagai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hamamatsu Photonics KK
Original Assignee
Hamamatsu Photonics KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hamamatsu Photonics KK filed Critical Hamamatsu Photonics KK
Priority to US14/148,180 priority Critical patent/USRE45403E1/en
Priority to US12/670,029 priority patent/US8420507B2/en
Priority to CN200880103871A priority patent/CN101842184A/zh
Publication of WO2009057558A1 publication Critical patent/WO2009057558A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • B23K26/0643—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms comprising mirrors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • B23K26/0648—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms comprising lenses
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • B23K26/402—Removing material taking account of the properties of the material involved involving non-metallic material, e.g. isolators
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
    • B28D5/0011—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing with preliminary treatment, e.g. weakening by scoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Inorganic Chemistry (AREA)
  • Laser Beam Processing (AREA)
  • Dicing (AREA)

Abstract

　３１ｎｓ～５４ｎｓのパルス幅で且つ７．５μｍ～１０μｍのパルスピッチで、パルスレーザ光であるレーザ光Ｌを照射することにより、切断の起点となる改質領域７を切断予定ライン５に沿ってＧａＡｓ基板１２に形成する。これにより、切断予定ライン５に沿ってＧａＡｓ基板１２に形成された改質領域７は、加工対象物１の厚さ方向に亀裂を発生させ易いものとなる。従って、ＧａＡｓ基板１２を備える板状の加工対象物１に対し、切断の起点としての機能が極めて高い改質領域７を形成することができる。
PCT/JP2008/069462 2007-10-30 2008-10-27 レーザ加工方法 Ceased WO2009057558A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US14/148,180 USRE45403E1 (en) 2007-10-30 2008-10-27 Laser processing method
US12/670,029 US8420507B2 (en) 2007-10-30 2008-10-27 Laser processing method
CN200880103871A CN101842184A (zh) 2007-10-30 2008-10-27 激光加工方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-282065 2007-10-30
JP2007282065A JP5449665B2 (ja) 2007-10-30 2007-10-30 レーザ加工方法

Publications (1)

Publication Number Publication Date
WO2009057558A1 true WO2009057558A1 (ja) 2009-05-07

Family

ID=40590949

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/069462 Ceased WO2009057558A1 (ja) 2007-10-30 2008-10-27 レーザ加工方法

Country Status (6)

Country Link
US (2) USRE45403E1 (ja)
JP (1) JP5449665B2 (ja)
KR (1) KR101549271B1 (ja)
CN (4) CN101842184A (ja)
TW (1) TWI510322B (ja)
WO (1) WO2009057558A1 (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010132637A2 (en) 2009-05-13 2010-11-18 Corning Incorporated Methods for cutting a fragile material
US8110422B2 (en) 2007-09-06 2012-02-07 Hamamatsu Photonics K.K. Manufacturing method of semiconductor laser element
KR101164418B1 (ko) * 2010-06-16 2012-07-12 한국과학기술원 펨토초 펄스 레이저의 비선형 초점이동을 통한 절단방법

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JP4659300B2 (ja) 2000-09-13 2011-03-30 浜松ホトニクス株式会社 レーザ加工方法及び半導体チップの製造方法
KR100749972B1 (ko) 2002-03-12 2007-08-16 하마마츠 포토닉스 가부시키가이샤 가공 대상물 절단 방법
TWI326626B (en) 2002-03-12 2010-07-01 Hamamatsu Photonics Kk Laser processing method
ES2285634T3 (es) 2002-03-12 2007-11-16 Hamamatsu Photonics K. K. Metodo para dividir un siustrato.
TWI520269B (zh) 2002-12-03 2016-02-01 濱松赫德尼古斯股份有限公司 Cutting method of semiconductor substrate
FR2852250B1 (fr) 2003-03-11 2009-07-24 Jean Luc Jouvin Fourreau de protection pour canule, un ensemble d'injection comportant un tel fourreau et aiguille equipee d'un tel fourreau
DE60315515T2 (de) 2003-03-12 2007-12-13 Hamamatsu Photonics K.K., Hamamatsu Laserstrahlbearbeitungsverfahren
EP2324950B1 (en) * 2003-07-18 2013-11-06 Hamamatsu Photonics K.K. Semiconductor substrate to be cut with treated and minute cavity region, and method of cutting such substrate
JP4563097B2 (ja) 2003-09-10 2010-10-13 浜松ホトニクス株式会社 半導体基板の切断方法
JP4509578B2 (ja) 2004-01-09 2010-07-21 浜松ホトニクス株式会社 レーザ加工方法及びレーザ加工装置
JP4601965B2 (ja) * 2004-01-09 2010-12-22 浜松ホトニクス株式会社 レーザ加工方法及びレーザ加工装置
JP4598407B2 (ja) * 2004-01-09 2010-12-15 浜松ホトニクス株式会社 レーザ加工方法及びレーザ加工装置
EP1742253B1 (en) 2004-03-30 2012-05-09 Hamamatsu Photonics K.K. Laser processing method
KR101190454B1 (ko) * 2004-08-06 2012-10-11 하마마츠 포토닉스 가부시키가이샤 레이저 가공 장치
JP4762653B2 (ja) * 2005-09-16 2011-08-31 浜松ホトニクス株式会社 レーザ加工方法及びレーザ加工装置
JP4907965B2 (ja) * 2005-11-25 2012-04-04 浜松ホトニクス株式会社 レーザ加工方法
JP4804911B2 (ja) * 2005-12-22 2011-11-02 浜松ホトニクス株式会社 レーザ加工装置
JP4907984B2 (ja) 2005-12-27 2012-04-04 浜松ホトニクス株式会社 レーザ加工方法及び半導体チップ
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JP5101073B2 (ja) * 2006-10-02 2012-12-19 浜松ホトニクス株式会社 レーザ加工装置
JP5132911B2 (ja) * 2006-10-03 2013-01-30 浜松ホトニクス株式会社 レーザ加工方法
JP4964554B2 (ja) * 2006-10-03 2012-07-04 浜松ホトニクス株式会社 レーザ加工方法
US8735770B2 (en) * 2006-10-04 2014-05-27 Hamamatsu Photonics K.K. Laser processing method for forming a modified region in an object
JP5336054B2 (ja) * 2007-07-18 2013-11-06 浜松ホトニクス株式会社 加工情報供給装置を備える加工情報供給システム
JP5054496B2 (ja) * 2007-11-30 2012-10-24 浜松ホトニクス株式会社 加工対象物切断方法
JP5134928B2 (ja) * 2007-11-30 2013-01-30 浜松ホトニクス株式会社 加工対象物研削方法
JP5692969B2 (ja) 2008-09-01 2015-04-01 浜松ホトニクス株式会社 収差補正方法、この収差補正方法を用いたレーザ加工方法、この収差補正方法を用いたレーザ照射方法、収差補正装置、及び、収差補正プログラム
JP5254761B2 (ja) 2008-11-28 2013-08-07 浜松ホトニクス株式会社 レーザ加工装置
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JP5241525B2 (ja) 2009-01-09 2013-07-17 浜松ホトニクス株式会社 レーザ加工装置
CN102307699B (zh) 2009-02-09 2015-07-15 浜松光子学株式会社 加工对象物的切断方法
WO2010116917A1 (ja) 2009-04-07 2010-10-14 浜松ホトニクス株式会社 レーザ加工装置及びレーザ加工方法
JP5491761B2 (ja) 2009-04-20 2014-05-14 浜松ホトニクス株式会社 レーザ加工装置
KR101770836B1 (ko) * 2009-08-11 2017-08-23 하마마츠 포토닉스 가부시키가이샤 레이저 가공장치 및 레이저 가공방법
DE102010009015A1 (de) * 2010-02-24 2011-08-25 OSRAM Opto Semiconductors GmbH, 93055 Verfahren zum Herstellen einer Mehrzahl von optoelektronischen Halbleiterchips
US8722516B2 (en) 2010-09-28 2014-05-13 Hamamatsu Photonics K.K. Laser processing method and method for manufacturing light-emitting device
JP5670764B2 (ja) * 2011-01-13 2015-02-18 浜松ホトニクス株式会社 レーザ加工方法
JP5480169B2 (ja) * 2011-01-13 2014-04-23 浜松ホトニクス株式会社 レーザ加工方法
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JP5894754B2 (ja) * 2011-09-16 2016-03-30 浜松ホトニクス株式会社 レーザ加工方法
CN102699526A (zh) * 2012-06-01 2012-10-03 苏州德龙激光有限公司 利用激光切割加工对象物的方法和装置
JP6000700B2 (ja) * 2012-07-10 2016-10-05 株式会社ディスコ レーザー加工方法
KR20160126175A (ko) * 2015-04-22 2016-11-02 삼성디스플레이 주식회사 기판 절단 방법 및 표시 장치 제조 방법
CN104868017A (zh) * 2015-06-01 2015-08-26 大族激光科技产业集团股份有限公司 砷化镓电池的激光加工方法
JP7307534B2 (ja) 2018-10-04 2023-07-12 浜松ホトニクス株式会社 レーザ加工方法、半導体デバイス製造方法及び検査装置
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