[go: up one dir, main page]

WO2008133205A1 - シリコン結晶素材及びこれを用いたｆｚシリコン単結晶の製造方法 - Google Patents

シリコン結晶素材及びこれを用いたｆｚシリコン単結晶の製造方法 Download PDF

Info

Publication number
WO2008133205A1
WO2008133205A1 PCT/JP2008/057608 JP2008057608W WO2008133205A1 WO 2008133205 A1 WO2008133205 A1 WO 2008133205A1 JP 2008057608 W JP2008057608 W JP 2008057608W WO 2008133205 A1 WO2008133205 A1 WO 2008133205A1
Authority
WO
WIPO (PCT)
Prior art keywords
crystal
silicon
section
furnace
single crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/057608
Other languages
English (en)
French (fr)
Inventor
Shinji Togawa
Yutaka Shiraishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumco Techxiv Corp
Original Assignee
Sumco Techxiv Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumco Techxiv Corp filed Critical Sumco Techxiv Corp
Priority to EP08751878A priority Critical patent/EP2143833A4/en
Publication of WO2008133205A1 publication Critical patent/WO2008133205A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/206—Controlling or regulating the thermal history of growing the ingot

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

　ＣＺ法により製造された有転位又は多結晶のシリコン結晶素材であって、ＦＺ法単結晶製造の原料棒として用いられ、クラックや破断が生じることなく、ＦＺ炉内に懸垂保持するための被把持部を有する大口径の有転位又は多結晶のシリコン結晶素材を提供すること。 　ＦＺ法によるシリコン単結晶の製造に用いられるシリコン結晶素材であって、ＣＺ法により製造された有転位又は多結晶シリコンであり種結晶部と、この種結晶部から結晶成長した漸次拡径する肩部と、円柱状の直胴部と、漸次縮径する尾部と、を有する。そして、ＣＺ炉内で結晶成長させて炉内から取り出される前に、所定時間かけて所定温度にまで徐冷される徐冷工程を経て製造され、３００°C下における残留応力が０．６ＭＰａ以下である。
PCT/JP2008/057608 2007-04-24 2008-04-18 シリコン結晶素材及びこれを用いたｆｚシリコン単結晶の製造方法 Ceased WO2008133205A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP08751878A EP2143833A4 (en) 2007-04-24 2008-04-18 SILICON CRYSTAL MATERIAL AND METHOD FOR PRODUCING AN FZ SILICON CRYSTAL WITH THEREWITH

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-113904 2007-04-24
JP2007113904A JP5318365B2 (ja) 2007-04-24 2007-04-24 シリコン結晶素材及びこれを用いたｆｚシリコン単結晶の製造方法

Publications (1)

Publication Number Publication Date
WO2008133205A1 true WO2008133205A1 (ja) 2008-11-06

Family

ID=39925659

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/057608 Ceased WO2008133205A1 (ja) 2007-04-24 2008-04-18 シリコン結晶素材及びこれを用いたｆｚシリコン単結晶の製造方法

Country Status (3)

Country Link
EP (1) EP2143833A4 (ja)
JP (1) JP5318365B2 (ja)
WO (1) WO2008133205A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010132470A (ja) * 2008-12-02 2010-06-17 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 Ｆｚ法シリコン単結晶の製造方法

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5846071B2 (ja) * 2012-08-01 2016-01-20 信越半導体株式会社 Ｆｚ法による半導体単結晶棒の製造方法
CN103147118B (zh) * 2013-02-25 2016-03-30 天津市环欧半导体材料技术有限公司 一种利用直拉区熔法制备太阳能级硅单晶的方法
JP6064675B2 (ja) * 2013-02-28 2017-01-25 信越半導体株式会社 半導体単結晶棒の製造方法
LV15065B (lv) * 2015-05-26 2015-11-20 Anatoly Kravtsov Silīcija beztīģeļa zonas kausēšanas paņēmiens
EP3181734A1 (en) 2015-12-16 2017-06-21 Total Marketing Services Manufacturing method of a silicon single crystal and silicon wafer production facility

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003055089A (ja) 2001-08-02 2003-02-26 Wacker Siltronic Ag フロートゾーン法により製造したシリコン単結晶及びシリコン基板
JP2005281076A (ja) 2004-03-30 2005-10-13 Shin Etsu Handotai Co Ltd シリコン単結晶の製造方法及びシリコン単結晶並びにシリコンウェーハ
JP2005306653A (ja) 2004-04-21 2005-11-04 Shin Etsu Handotai Co Ltd シリコン単結晶の製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3333960A1 (de) * 1983-09-20 1985-04-04 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Verfahren zur herstellung von versetzungsfreien einkristallstaeben aus silicium
JP2937115B2 (ja) * 1996-03-15 1999-08-23 住友金属工業株式会社 単結晶引き上げ方法
US6379642B1 (en) * 1997-04-09 2002-04-30 Memc Electronic Materials, Inc. Vacancy dominated, defect-free silicon
JPH1179889A (ja) * 1997-07-09 1999-03-23 Shin Etsu Handotai Co Ltd 結晶欠陥が少ないシリコン単結晶の製造方法、製造装置並びにこの方法、装置で製造されたシリコン単結晶とシリコンウエーハ
JP4867173B2 (ja) * 2005-02-07 2012-02-01 株式会社Ｓｕｍｃｏ シリコン結晶の製造方法およびその製造装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003055089A (ja) 2001-08-02 2003-02-26 Wacker Siltronic Ag フロートゾーン法により製造したシリコン単結晶及びシリコン基板
JP2005281076A (ja) 2004-03-30 2005-10-13 Shin Etsu Handotai Co Ltd シリコン単結晶の製造方法及びシリコン単結晶並びにシリコンウェーハ
JP2005306653A (ja) 2004-04-21 2005-11-04 Shin Etsu Handotai Co Ltd シリコン単結晶の製造方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP2143833A4 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010132470A (ja) * 2008-12-02 2010-06-17 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 Ｆｚ法シリコン単結晶の製造方法

Also Published As

Publication number Publication date
JP5318365B2 (ja) 2013-10-16
JP2008266090A (ja) 2008-11-06
EP2143833A4 (en) 2010-12-22
EP2143833A1 (en) 2010-01-13

Similar Documents

Publication Publication Date Title
WO2008093576A1 (ja) シリコン結晶素材及びその製造方法
WO2008133205A1 (ja) シリコン結晶素材及びこれを用いたｆｚシリコン単結晶の製造方法
WO2008039914A3 (en) Sic single crystals with reduced dislocation density grown by step-wise periodic perturbation technique
WO2012134092A3 (en) Method of manufacturing single crystal ingot, and single crystal ingot and wafer manufactured thereby
WO2009014957A3 (en) Methods for manufacturing cast silicon from seed crystals
WO2008014434A3 (en) Crystal growth method and reactor design
WO2011037127A3 (ja) ナノ結晶チタン合金およびその製造方法
WO2008025872A3 (en) Crystal manufacturing
WO2011027992A3 (ko) 사파이어 단결정 성장방법과 그 장치
WO2007084934A3 (en) Methods and apparatuses for manufacturing monocrystalline cast silicon and monocrystalline cast silicon bodies for photovoltaics
WO2008133278A1 (ja) シリコン単結晶の製造方法および装置並びにシリコン単結晶インゴット
IL210743A0 (en) Crystalline silicon pv cell with selective emitter produced with low temperature precision etch back and passivation process
EP2210660A4 (en) METHOD FOR REGISTERING LIQUID AMMONIA, METHOD FOR PRODUCING NITRIDE CRYSTALS AND REACTOR FOR PULLING NITRIDE CRYSTALS
EP2067744A3 (en) Method for manufacturing polycrystalline silicon
WO2013002540A3 (en) Apparatus and method for growing silicon carbide single crystal
WO2013002539A3 (en) Apparatus and method for growing silicon carbide single crystal
WO2009140406A3 (en) Crystal growth apparatus for solar cell manufacturing
WO2008155673A8 (en) Method for producing sic single crystal
WO2013025024A3 (en) Ingot growing apparatus and method of manufacturing ingot
WO2008146724A1 (ja) シリコン単結晶の製造方法及びシリコン単結晶基板
WO2010058980A3 (en) Single crystal growing apparatus
CN201463538U (zh) 组合坩埚
WO2011072278A3 (en) Germanium ingots/wafers having low micro-pit density (mpd) as well as systems and methods for manufacturing same
TW201130156A (en) Sapphire single crystal for producing sapphire single crystal substrate for LED, sapphire single crystal substrate for LED, light-eliciting element, and method for preparing the same
IL202815A0 (en) Method for producing polycrystalline silicon from hudrosiliconfluoric acid solution and a plant for the producing silicon tetrafluoride and polycrystalline silicon

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08751878

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

WWE Wipo information: entry into national phase

Ref document number: 2008751878

Country of ref document: EP