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WO2013002539A3 - Apparatus and method for growing silicon carbide single crystal - Google Patents

Apparatus and method for growing silicon carbide single crystal Download PDF

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Publication number
WO2013002539A3
WO2013002539A3 PCT/KR2012/005045 KR2012005045W WO2013002539A3 WO 2013002539 A3 WO2013002539 A3 WO 2013002539A3 KR 2012005045 W KR2012005045 W KR 2012005045W WO 2013002539 A3 WO2013002539 A3 WO 2013002539A3
Authority
WO
WIPO (PCT)
Prior art keywords
silicon carbide
single crystal
crucible
growing
carbide single
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2012/005045
Other languages
French (fr)
Other versions
WO2013002539A2 (en
Inventor
Young Shol Kim
Sun Hyuk Bae
Sung Wan Hong
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SK Innovation Co Ltd
Original Assignee
SK Innovation Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SK Innovation Co Ltd filed Critical SK Innovation Co Ltd
Priority to JP2014518793A priority Critical patent/JP5979739B2/en
Publication of WO2013002539A2 publication Critical patent/WO2013002539A2/en
Publication of WO2013002539A3 publication Critical patent/WO2013002539A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B9/00—Single-crystal growth from melt solutions using molten solvents
    • C30B9/04—Single-crystal growth from melt solutions using molten solvents by cooling of the solution
    • C30B9/06—Single-crystal growth from melt solutions using molten solvents by cooling of the solution using as solvent a component of the crystal composition
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

Provided are an apparatus and a method for growing a silicon carbide single crystal by solution growth. The apparatus for growing a silicon carbide single crystal includes: a reaction chamber that is in a predetermined pressure state; a crucible that is provided in the reaction chamber, includes silicon (Si) or silicon carbide (SiC) powders or a mixture thereof charged therein, includes a silicon carbide seed provided at an upper portion of an inner side thereof and growing a silicon carbide and a seed connection bar extended from the silicon carbide seed, and is made of a graphite material; and a heating element that heats the crucible. An inner portion of the crucible is provided with at least one protrusion jaws, at least some or all of which are formed along an inner peripheral surface of the crucible, wherein the protrusion jaw is made of the graphite material.
PCT/KR2012/005045 2011-06-29 2012-06-26 Apparatus and method for growing silicon carbide single crystal Ceased WO2013002539A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2014518793A JP5979739B2 (en) 2011-06-29 2012-06-26 Silicon carbide single crystal growth apparatus and method

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2011-0063669 2011-06-29
KR1020110063669A KR20130002616A (en) 2011-06-29 2011-06-29 Reactor and method for growing silicon carbide single crystal

Publications (2)

Publication Number Publication Date
WO2013002539A2 WO2013002539A2 (en) 2013-01-03
WO2013002539A3 true WO2013002539A3 (en) 2013-03-14

Family

ID=47424653

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2012/005045 Ceased WO2013002539A2 (en) 2011-06-29 2012-06-26 Apparatus and method for growing silicon carbide single crystal

Country Status (3)

Country Link
JP (1) JP5979739B2 (en)
KR (1) KR20130002616A (en)
WO (1) WO2013002539A2 (en)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5828810B2 (en) 2012-07-18 2015-12-09 新日鐵住金株式会社 SiC single crystal manufacturing apparatus used in solution growth method, crucible used in the manufacturing apparatus, and SiC single crystal manufacturing method using the manufacturing apparatus
US20150211147A1 (en) * 2012-07-27 2015-07-30 Kyocera Corporation Crucible, crystal growing apparatus, and crystal growing method
KR101636435B1 (en) * 2014-10-22 2016-07-06 한국세라믹기술원 Porous graphite crucible and the manufacturing method of SiC single crystal via solution growth using the same
JP2017119594A (en) * 2015-12-28 2017-07-06 東洋炭素株式会社 Method for producing single crystal SiC and container
KR102049021B1 (en) * 2016-03-09 2019-11-26 주식회사 엘지화학 Apparatus for the growth of silicon carbide single crystal
WO2017183747A1 (en) * 2016-04-21 2017-10-26 한국세라믹기술원 Crucible for growing solution and method for growing solution inside crucible
KR102122739B1 (en) * 2017-12-19 2020-06-16 한국세라믹기술원 A crucible designed with protrusion for crystal growth using solution
DE102018129492B4 (en) 2018-11-22 2022-04-28 Ebner Industrieofenbau Gmbh Apparatus and method for growing crystals
KR102643619B1 (en) * 2019-06-28 2024-03-04 주식회사 엘지화학 Single crystal growth device
CN111676519A (en) * 2020-08-05 2020-09-18 郑红军 Silicon carbide crystal melt growth device
CN113816382B (en) * 2021-11-17 2023-05-12 哈尔滨工业大学 Method for preparing ultra-long SiC nanowires with high efficiency and low cost
CN114481317A (en) * 2022-01-27 2022-05-13 北京青禾晶元半导体科技有限责任公司 Device and method for manufacturing silicon carbide crystal
CN115467027B (en) * 2022-08-15 2024-02-06 上海汉虹精密机械有限公司 Conductive structure for silicon carbide furnace chamber
CN116695250B (en) * 2023-06-08 2024-04-12 北京晶格领域半导体有限公司 Device for growing silicon carbide single crystal by liquid phase method
CN117230530B (en) * 2023-11-15 2024-01-30 常州臻晶半导体有限公司 Crystal growth heating system and working method thereof

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR970008332B1 (en) * 1987-10-26 1997-05-23 노오스 캐롤라이나 스테이스 유니버시티 Sublimation growth of silicon carbide single crystals
KR100749860B1 (en) * 2006-01-02 2007-08-21 학교법인 동의학원 Monocrystalline Growth Apparatus and Monocrystalline Growth Method
KR20090037377A (en) * 2006-08-10 2009-04-15 신에쓰 가가꾸 고교 가부시끼가이샤 Single Crystal Silicon Carbide and Manufacturing Method Thereof
KR101028116B1 (en) * 2008-12-09 2011-04-08 한국전기연구원 Device for growing multiple silicon carbide single crystals

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5795893A (en) * 1980-12-03 1982-06-14 Fujitsu Ltd Liquid phase epitaxially growing method
JPH02221187A (en) * 1989-02-20 1990-09-04 Sumitomo Electric Ind Ltd Liquid phase epitaxy
JP3893012B2 (en) * 1999-05-22 2007-03-14 独立行政法人科学技術振興機構 CLBO single crystal growth method
JP4225296B2 (en) * 2005-06-20 2009-02-18 トヨタ自動車株式会社 Method for producing silicon carbide single crystal
JP5304600B2 (en) * 2009-11-09 2013-10-02 トヨタ自動車株式会社 SiC single crystal manufacturing apparatus and manufacturing method

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR970008332B1 (en) * 1987-10-26 1997-05-23 노오스 캐롤라이나 스테이스 유니버시티 Sublimation growth of silicon carbide single crystals
KR100749860B1 (en) * 2006-01-02 2007-08-21 학교법인 동의학원 Monocrystalline Growth Apparatus and Monocrystalline Growth Method
KR20090037377A (en) * 2006-08-10 2009-04-15 신에쓰 가가꾸 고교 가부시끼가이샤 Single Crystal Silicon Carbide and Manufacturing Method Thereof
KR101028116B1 (en) * 2008-12-09 2011-04-08 한국전기연구원 Device for growing multiple silicon carbide single crystals

Also Published As

Publication number Publication date
JP2014518194A (en) 2014-07-28
KR20130002616A (en) 2013-01-08
JP5979739B2 (en) 2016-08-31
WO2013002539A2 (en) 2013-01-03

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