[go: up one dir, main page]

WO2010058980A3 - Single crystal growing apparatus - Google Patents

Single crystal growing apparatus Download PDF

Info

Publication number
WO2010058980A3
WO2010058980A3 PCT/KR2009/006830 KR2009006830W WO2010058980A3 WO 2010058980 A3 WO2010058980 A3 WO 2010058980A3 KR 2009006830 W KR2009006830 W KR 2009006830W WO 2010058980 A3 WO2010058980 A3 WO 2010058980A3
Authority
WO
WIPO (PCT)
Prior art keywords
single crystal
growing apparatus
crystal growing
crucible
chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2009/006830
Other languages
French (fr)
Other versions
WO2010058980A2 (en
Inventor
Sang Hun Lee
Ll Soo Choi
Hyun Jung Oh
Seung Jeong
Ji Hun Moon
Do Yeon Kim
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SK Siltron Co Ltd
Original Assignee
Siltron Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siltron Inc filed Critical Siltron Inc
Publication of WO2010058980A2 publication Critical patent/WO2010058980A2/en
Publication of WO2010058980A3 publication Critical patent/WO2010058980A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C30B15/16—Heating of the melt or the crystallised materials by irradiation or electric discharge
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

Embodiments provide a single crystal growing apparatus. The single crystal growing apparatus may include a chamber, a crucible, a heater, and heat supplying means. The crucible may be provided in the chamber to hold silicon melt. The heater may be provided in the chamber to heat the crucible. The heat supplying means may supply heat to a crystal at a necking portion during single crystal growth.
PCT/KR2009/006830 2008-11-20 2009-11-20 Single crystal growing apparatus Ceased WO2010058980A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020080115533A KR20100056640A (en) 2008-11-20 2008-11-20 Single crystal growth apparatus
KR10-2008-0115533 2008-11-20

Publications (2)

Publication Number Publication Date
WO2010058980A2 WO2010058980A2 (en) 2010-05-27
WO2010058980A3 true WO2010058980A3 (en) 2010-08-19

Family

ID=42198674

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2009/006830 Ceased WO2010058980A2 (en) 2008-11-20 2009-11-20 Single crystal growing apparatus

Country Status (2)

Country Link
KR (1) KR20100056640A (en)
WO (1) WO2010058980A2 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101263082B1 (en) * 2010-11-15 2013-05-09 주식회사 엘지실트론 Sapphire Ingot Grower
KR101383954B1 (en) * 2012-08-16 2014-04-10 주식회사 엘지실트론 Method for Growing Silicon Single Crystal
CN107805840A (en) * 2016-09-09 2018-03-16 上海新昇半导体科技有限公司 A kind of crystal pulling mechanism of crystal pulling furnace
CN107881553A (en) * 2016-09-30 2018-04-06 上海新昇半导体科技有限公司 A kind of crystal pulling furnace
CN107604428A (en) * 2017-10-18 2018-01-19 青海日晶光电有限公司 A kind of monocrystalline silicon continuous production crystallization charging (feeding) equipment and technique
US20250236986A1 (en) * 2024-01-19 2025-07-24 Globalwafers Co., Ltd. Hotzone components having a protective coating
US20250257495A1 (en) * 2024-02-08 2025-08-14 Globalwafers Co., Ltd. Bi-directional heating of a silicon charge

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08175896A (en) * 1994-12-22 1996-07-09 Tdk Corp Method and device for producing single crystal
JPH1081593A (en) * 1996-09-02 1998-03-31 Super Silicon Kenkyusho:Kk Production of cz silicon single crystal and apparatus therefor
JPH10194893A (en) * 1996-12-27 1998-07-28 Tdk Corp Apparatus for production of single crystal
JP2008189525A (en) * 2007-02-06 2008-08-21 Covalent Materials Corp Single crystal pulling device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08175896A (en) * 1994-12-22 1996-07-09 Tdk Corp Method and device for producing single crystal
JPH1081593A (en) * 1996-09-02 1998-03-31 Super Silicon Kenkyusho:Kk Production of cz silicon single crystal and apparatus therefor
JPH10194893A (en) * 1996-12-27 1998-07-28 Tdk Corp Apparatus for production of single crystal
JP2008189525A (en) * 2007-02-06 2008-08-21 Covalent Materials Corp Single crystal pulling device

Also Published As

Publication number Publication date
KR20100056640A (en) 2010-05-28
WO2010058980A2 (en) 2010-05-27

Similar Documents

Publication Publication Date Title
WO2012067372A3 (en) Sapphire ingot grower
WO2010058980A3 (en) Single crystal growing apparatus
WO2008133278A1 (en) Process for producing silicon single crystal, apparatus therefor and silicon single crystal ingot
WO2008107281A3 (en) Device for preparing a liquid beverage from a cartridge
EP2267188A4 (en) Single-crystal growth apparatus and raw-material supply method
WO2008014434A3 (en) Crystal growth method and reactor design
PL375924A1 (en) High pressure/high temperature apparatus with improved temperature control for crystal growth
EP2089313A4 (en) Metal-polymer hybrid nanomaterials, method for preparing the same method for controlling optical property of the same and optoelectronic device using the same
WO2012099343A3 (en) Resistance heated sapphire single crystal ingot grower, method of manufacturing resistance heated sapphire sngle crystal ingot, sapphire sngle crystal ingot, and sapphire wafer
IL208829A0 (en) Method for growing monocrystalline diamonds
WO2010007564A3 (en) Safe ablation
EP1970940A3 (en) Substrate processing apparatus, substrate processing method and storage medium
PL2313694T3 (en) Method for controlling a hot water temperature in using low flux in hot water supply system
WO2013002539A3 (en) Apparatus and method for growing silicon carbide single crystal
SI2154727T1 (en) Solar cells provided with color modulation and method for fabricating the same
GB0822337D0 (en) Method of controlling storage,distribution and supply of electricity
IL206434A0 (en) Bioreactor for cell growth and associated methods
WO2008155673A8 (en) Method for producing sic single crystal
WO2013025024A3 (en) Ingot growing apparatus and method of manufacturing ingot
WO2009140406A3 (en) Crystal growth apparatus for solar cell manufacturing
SG171512A1 (en) Method for pulling a single crystal composed of silicon with a section having a diameter that remains constant
EP2264226A4 (en) Quartz glass crucible and process for producing the same
IL210908A0 (en) Combination of two genetic elements for controlling the floral development of a dicotyledonous plant, and use in detection and selection methods
WO2013030470A8 (en) System for manufacturing a crystalline material by directional crystallization provided with an additional lateral heat source
ZA200905490B (en) Condom holder provided with means for releasing the condom from the holder, and a method of putting the condom on

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 09827745

Country of ref document: EP

Kind code of ref document: A2

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 09827745

Country of ref document: EP

Kind code of ref document: A2