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WO2008123088A1 - 薄膜トランジスタおよびその製造方法ならびに表示装置 - Google Patents

薄膜トランジスタおよびその製造方法ならびに表示装置 Download PDF

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Publication number
WO2008123088A1
WO2008123088A1 PCT/JP2008/055044 JP2008055044W WO2008123088A1 WO 2008123088 A1 WO2008123088 A1 WO 2008123088A1 JP 2008055044 W JP2008055044 W JP 2008055044W WO 2008123088 A1 WO2008123088 A1 WO 2008123088A1
Authority
WO
WIPO (PCT)
Prior art keywords
thin
film transistor
manufacturing
display
impurities
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/055044
Other languages
English (en)
French (fr)
Inventor
Tetsuo Nakayama
Toshiaki Arai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to CN2008800004274A priority Critical patent/CN101542742B/zh
Priority to KR1020087029518A priority patent/KR101450043B1/ko
Priority to US12/303,287 priority patent/US20100044709A1/en
Publication of WO2008123088A1 publication Critical patent/WO2008123088A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0314—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral top-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H10D30/6715—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures

Landscapes

  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)

Abstract

　基板（２）上に、ゲート電極３と、ゲート絶縁膜（４）と、チャネル層（５）と、ソース・ドレイン層（７）、（８）とをこの順またはこれと逆の順に積層してなる薄膜トランジスタにおいて、ソース・ドレイン層（７）、（８）には、チャネル層（５）に向かって低濃度となるような濃度勾配を有して不純物が含有されていることを特徴とし、オン／オフ比を増大させることが可能な薄膜トランジスタおよびその製造方法ならびに表示装置である。
PCT/JP2008/055044 2007-04-04 2008-03-19 薄膜トランジスタおよびその製造方法ならびに表示装置 Ceased WO2008123088A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN2008800004274A CN101542742B (zh) 2007-04-04 2008-03-19 薄膜晶体管及其制造方法、显示装置
KR1020087029518A KR101450043B1 (ko) 2007-04-04 2008-03-19 박막 트랜지스터 및 그 제조 방법 및 표시 장치
US12/303,287 US20100044709A1 (en) 2007-04-04 2008-03-19 Thin film transistor, manufacturing method thereof and display device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-098026 2007-04-04
JP2007098026A JP2008258345A (ja) 2007-04-04 2007-04-04 薄膜トランジスタおよびその製造方法ならびに表示装置

Publications (1)

Publication Number Publication Date
WO2008123088A1 true WO2008123088A1 (ja) 2008-10-16

Family

ID=39830589

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/055044 Ceased WO2008123088A1 (ja) 2007-04-04 2008-03-19 薄膜トランジスタおよびその製造方法ならびに表示装置

Country Status (6)

Country Link
US (1) US20100044709A1 (ja)
JP (1) JP2008258345A (ja)
KR (1) KR101450043B1 (ja)
CN (1) CN101542742B (ja)
TW (1) TW200908332A (ja)
WO (1) WO2008123088A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011135874A1 (ja) * 2010-04-30 2011-11-03 シャープ株式会社 半導体装置およびその製造方法ならびに表示装置

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008149873A1 (en) * 2007-05-31 2008-12-11 Canon Kabushiki Kaisha Manufacturing method of thin film transistor using oxide semiconductor
KR101274708B1 (ko) * 2008-06-25 2013-06-12 엘지디스플레이 주식회사 평판 표시장치용 어레이 기판 및 그의 제조방법
JP2010113253A (ja) * 2008-11-07 2010-05-20 Hitachi Displays Ltd 表示装置及び表示装置の製造方法
KR20100067612A (ko) * 2008-12-11 2010-06-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 박막 트랜지스터 및 표시 장치
JP2010225780A (ja) * 2009-03-23 2010-10-07 Casio Computer Co Ltd 薄膜トランジスタ及び薄膜トランジスタの製造方法
JP2010287628A (ja) * 2009-06-09 2010-12-24 Casio Computer Co Ltd トランジスタ基板及びトランジスタ基板の製造方法
JP5532803B2 (ja) * 2009-09-30 2014-06-25 ソニー株式会社 半導体デバイスおよび表示装置
JP2011077363A (ja) * 2009-09-30 2011-04-14 Casio Computer Co Ltd トランジスタ基板及びトランジスタ基板の製造方法
JP2011210940A (ja) * 2010-03-30 2011-10-20 Casio Computer Co Ltd 薄膜トランジスタ、薄膜トランジスタの製造方法及び発光装置
JP5554832B2 (ja) * 2010-04-06 2014-07-23 株式会社日立製作所 薄膜トランジスタおよびその製造方法
KR101761634B1 (ko) * 2010-10-19 2017-07-27 삼성디스플레이 주식회사 박막 트랜지스터 기판 및 이의 제조 방법
US8405085B2 (en) * 2010-12-01 2013-03-26 Au Optronics Corporation Thin film transistor capable of reducing photo current leakage
TWI438850B (zh) * 2011-05-06 2014-05-21 Au Optronics Corp 開關元件
KR20130037072A (ko) * 2011-10-05 2013-04-15 삼성전자주식회사 광터치 스크린 장치 및 그 제조 방법
CN102751240B (zh) * 2012-05-18 2015-03-11 京东方科技集团股份有限公司 薄膜晶体管阵列基板及其制造方法、显示面板、显示装置
CN104576750A (zh) * 2014-12-02 2015-04-29 信利（惠州）智能显示有限公司 薄膜晶体管结构
JP6301866B2 (ja) * 2015-03-17 2018-03-28 東芝メモリ株式会社 半導体製造方法
CN104966720B (zh) * 2015-07-14 2018-06-01 深圳市华星光电技术有限公司 Tft基板结构及其制作方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01309378A (ja) * 1988-06-07 1989-12-13 Sumitomo Metal Ind Ltd 薄膜半導体素子
JPH08172195A (ja) * 1994-12-16 1996-07-02 Sharp Corp 薄膜トランジスタ
JPH10256554A (ja) * 1997-03-13 1998-09-25 Toshiba Corp 薄膜トランジスタ及びその製造方法
JPH1117188A (ja) * 1997-06-23 1999-01-22 Sharp Corp アクティブマトリクス基板
JPH1197706A (ja) * 1997-09-23 1999-04-09 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP2005057056A (ja) * 2003-08-04 2005-03-03 Sharp Corp 薄膜トランジスタおよびその製造方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08201851A (ja) * 1995-01-31 1996-08-09 Sharp Corp アクティブマトリクス基板
US6396078B1 (en) * 1995-06-20 2002-05-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with a tapered hole formed using multiple layers with different etching rates
JP4493779B2 (ja) * 2000-01-31 2010-06-30 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
US20020020840A1 (en) * 2000-03-10 2002-02-21 Setsuo Nakajima Semiconductor device and manufacturing method thereof
US7078321B2 (en) * 2000-06-19 2006-07-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
GB0017471D0 (en) * 2000-07-18 2000-08-30 Koninkl Philips Electronics Nv Thin film transistors and their manufacture
JP4115283B2 (ja) * 2003-01-07 2008-07-09 シャープ株式会社 半導体装置およびその製造方法
KR100584716B1 (ko) * 2004-04-06 2006-05-29 엘지.필립스 엘시디 주식회사 구동회로 일체형 액정표시장치용 어레이 기판의 제조 방법
JP4540438B2 (ja) * 2004-09-27 2010-09-08 富士通セミコンダクター株式会社 半導体装置及びその製造方法
JP5230899B2 (ja) * 2005-07-12 2013-07-10 日本電気株式会社 半導体装置の製造方法
KR20070009321A (ko) * 2005-07-15 2007-01-18 삼성전자주식회사 박막 트랜지스터 기판 및 이의 제조 방법
JP2007273919A (ja) * 2006-03-31 2007-10-18 Nec Corp 半導体装置及びその製造方法
KR101217555B1 (ko) * 2006-06-28 2013-01-02 삼성전자주식회사 접합 전계 효과 박막 트랜지스터

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01309378A (ja) * 1988-06-07 1989-12-13 Sumitomo Metal Ind Ltd 薄膜半導体素子
JPH08172195A (ja) * 1994-12-16 1996-07-02 Sharp Corp 薄膜トランジスタ
JPH10256554A (ja) * 1997-03-13 1998-09-25 Toshiba Corp 薄膜トランジスタ及びその製造方法
JPH1117188A (ja) * 1997-06-23 1999-01-22 Sharp Corp アクティブマトリクス基板
JPH1197706A (ja) * 1997-09-23 1999-04-09 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP2005057056A (ja) * 2003-08-04 2005-03-03 Sharp Corp 薄膜トランジスタおよびその製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011135874A1 (ja) * 2010-04-30 2011-11-03 シャープ株式会社 半導体装置およびその製造方法ならびに表示装置

Also Published As

Publication number Publication date
US20100044709A1 (en) 2010-02-25
TW200908332A (en) 2009-02-16
CN101542742B (zh) 2011-02-23
KR20090128315A (ko) 2009-12-15
TWI377679B (ja) 2012-11-21
JP2008258345A (ja) 2008-10-23
CN101542742A (zh) 2009-09-23
KR101450043B1 (ko) 2014-10-13

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