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WO2008114418A1 - 半導体装置及びその製造方法 - Google Patents

半導体装置及びその製造方法 Download PDF

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Publication number
WO2008114418A1
WO2008114418A1 PCT/JP2007/055673 JP2007055673W WO2008114418A1 WO 2008114418 A1 WO2008114418 A1 WO 2008114418A1 JP 2007055673 W JP2007055673 W JP 2007055673W WO 2008114418 A1 WO2008114418 A1 WO 2008114418A1
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor device
film
lower electrode
insulating film
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2007/055673
Other languages
English (en)
French (fr)
Inventor
Tetsuo Yoshimura
Kenichi Watanabe
Satoshi Otsuka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Semiconductor Ltd
Original Assignee
Fujitsu Semiconductor Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Semiconductor Ltd filed Critical Fujitsu Semiconductor Ltd
Priority to KR1020097017852A priority Critical patent/KR101187659B1/ko
Priority to JP2009505017A priority patent/JP5212361B2/ja
Priority to PCT/JP2007/055673 priority patent/WO2008114418A1/ja
Priority to CN2007800522103A priority patent/CN101636834B/zh
Publication of WO2008114418A1 publication Critical patent/WO2008114418A1/ja
Priority to US12/539,723 priority patent/US8169051B2/en
Anticipated expiration legal-status Critical
Priority to US13/434,177 priority patent/US8642400B2/en
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/005—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/228—Terminals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/33—Thin- or thick-film capacitors (thin- or thick-film circuits; capacitors without a potential-jump or surface barrier specially adapted for integrated circuits, details thereof, multistep manufacturing processes therefor)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
    • H01L23/5223—Capacitor integral with wiring layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/212—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)

Abstract

　半導体基板１の上方に形成される絶縁膜と、絶縁膜７上に形成される容量下部電極１１ｂと、容量下部電極１１ｂの上面及び側面の上に形成される誘電体膜１３と、誘電体膜１３の上に形成され且つ容量下部電極１１ｂよりも広く形成された金属膜の第１金属パターンから構成される容量上部電極１９ｂとを有する容量素子と、絶縁膜７上で前記金属膜の第２金属パターンから構成される配線１９ａ，１９ｂと、を有するキャパシタを有している。
PCT/JP2007/055673 2007-03-20 2007-03-20 半導体装置及びその製造方法 Ceased WO2008114418A1 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
KR1020097017852A KR101187659B1 (ko) 2007-03-20 2007-03-20 반도체 장치 및 그 제조 방법
JP2009505017A JP5212361B2 (ja) 2007-03-20 2007-03-20 半導体装置及びその製造方法
PCT/JP2007/055673 WO2008114418A1 (ja) 2007-03-20 2007-03-20 半導体装置及びその製造方法
CN2007800522103A CN101636834B (zh) 2007-03-20 2007-03-20 半导体器件及其制造方法
US12/539,723 US8169051B2 (en) 2007-03-20 2009-08-12 Semiconductor device including capacitor element and method of manufacturing the same
US13/434,177 US8642400B2 (en) 2007-03-20 2012-03-29 Method of manufacturing semiconductor device including capacitor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2007/055673 WO2008114418A1 (ja) 2007-03-20 2007-03-20 半導体装置及びその製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/539,723 Continuation US8169051B2 (en) 2007-03-20 2009-08-12 Semiconductor device including capacitor element and method of manufacturing the same

Publications (1)

Publication Number Publication Date
WO2008114418A1 true WO2008114418A1 (ja) 2008-09-25

Family

ID=39765539

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/055673 Ceased WO2008114418A1 (ja) 2007-03-20 2007-03-20 半導体装置及びその製造方法

Country Status (5)

Country Link
US (2) US8169051B2 (ja)
JP (1) JP5212361B2 (ja)
KR (1) KR101187659B1 (ja)
CN (1) CN101636834B (ja)
WO (1) WO2008114418A1 (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103367104A (zh) * 2012-03-26 2013-10-23 上海宏力半导体制造有限公司 一种对金属电容上电极的刻蚀方法
JP2014165458A (ja) * 2013-02-27 2014-09-08 Rohm Co Ltd 半導体装置および半導体装置の製造方法
JP2015230959A (ja) * 2014-06-04 2015-12-21 ルネサスエレクトロニクス株式会社 半導体装置

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7956466B2 (en) 2008-05-09 2011-06-07 International Business Machines Corporation Structure for interconnect structure containing various capping materials for electrical fuse and other related applications
US8772156B2 (en) * 2008-05-09 2014-07-08 International Business Machines Corporation Methods of fabricating interconnect structures containing various capping materials for electrical fuse and other related applications
JP6582669B2 (ja) * 2015-07-22 2019-10-02 Tdk株式会社 薄膜キャパシタ及び半導体装置
US11894297B2 (en) * 2021-07-29 2024-02-06 Taiwan Semiconductor Manufacturing Company, Ltd. Metal-insulator-metal capacitor having electrodes with increasing thickness
KR102779338B1 (ko) * 2021-10-06 2025-03-12 주식회사 테스 기판 처리 방법
TWI782805B (zh) * 2021-12-01 2022-11-01 力晶積成電子製造股份有限公司 電容器結構及其製造方法

Citations (9)

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Publication number Priority date Publication date Assignee Title
JPH08316430A (ja) * 1995-05-15 1996-11-29 Mitsubishi Electric Corp 半導体メモリとその製造方法、スタックドキャパシタ
JP2000183312A (ja) * 1998-12-17 2000-06-30 Nec Corp 半導体装置
JP2002217373A (ja) * 2001-01-17 2002-08-02 Mitsubishi Electric Corp 半導体装置の製造方法及びその製造方法を用いて製造された半導体装置
JP2004297022A (ja) * 2003-02-03 2004-10-21 Nec Electronics Corp 半導体装置及びその製造方法
JP2005128299A (ja) * 2003-10-24 2005-05-19 Sony Corp 半導体装置、平面表示装置およびそれらの製造方法
JP2005167198A (ja) * 2003-11-10 2005-06-23 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
JP2005175491A (ja) * 2003-12-10 2005-06-30 Samsung Electronics Co Ltd 金属−絶縁体−金属キャパシタを含む半導体素子及びその製造方法
JP2006253268A (ja) * 2005-03-09 2006-09-21 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
JP2007005719A (ja) * 2005-06-27 2007-01-11 Renesas Technology Corp 半導体装置、及びそれを用いた送受信装置、並びにその半導体装置の製造方法

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IT1256156B (it) 1992-10-06 1995-11-29 Montecatini Tecnologie Srl Catalizzatore in granuli particolarmente per la deidrogenazione ossidativa di metanolo a formaldeide
EP1132973A1 (de) 2000-03-06 2001-09-12 Infineon Technologies AG Metall-Isolator-Metall-Kondensator und Verfahren zu seiner Herstellung
JP2002043517A (ja) 2000-07-21 2002-02-08 Sony Corp 半導体装置およびその製造方法
US6717193B2 (en) 2001-10-09 2004-04-06 Koninklijke Philips Electronics N.V. Metal-insulator-metal (MIM) capacitor structure and methods of fabricating same
JP2003318269A (ja) 2002-04-24 2003-11-07 Mitsubishi Electric Corp 半導体装置およびその製造方法
KR100480641B1 (ko) 2002-10-17 2005-03-31 삼성전자주식회사 고 커패시턴스를 지니는 금속-절연체-금속 커패시터, 이를구비하는 집적회로 칩 및 이의 제조 방법
JP2004303908A (ja) 2003-03-31 2004-10-28 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
US7453128B2 (en) 2003-11-10 2008-11-18 Panasonic Corporation Semiconductor device and method for fabricating the same
JP4282450B2 (ja) 2003-12-01 2009-06-24 エルピーダメモリ株式会社 半導体装置の製造方法
JP4659355B2 (ja) 2003-12-11 2011-03-30 富士通セミコンダクター株式会社 半導体装置およびその製造方法
US7199001B2 (en) 2004-03-29 2007-04-03 Taiwan Semiconductor Manufacturing Co., Ltd. Method of forming MIM capacitor electrodes
KR100688686B1 (ko) 2005-12-29 2007-03-02 동부일렉트로닉스 주식회사 Ｍｉｍ 구조 커패시터 제조방법
JP2006210952A (ja) 2006-04-26 2006-08-10 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08316430A (ja) * 1995-05-15 1996-11-29 Mitsubishi Electric Corp 半導体メモリとその製造方法、スタックドキャパシタ
JP2000183312A (ja) * 1998-12-17 2000-06-30 Nec Corp 半導体装置
JP2002217373A (ja) * 2001-01-17 2002-08-02 Mitsubishi Electric Corp 半導体装置の製造方法及びその製造方法を用いて製造された半導体装置
JP2004297022A (ja) * 2003-02-03 2004-10-21 Nec Electronics Corp 半導体装置及びその製造方法
JP2005128299A (ja) * 2003-10-24 2005-05-19 Sony Corp 半導体装置、平面表示装置およびそれらの製造方法
JP2005167198A (ja) * 2003-11-10 2005-06-23 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
JP2005175491A (ja) * 2003-12-10 2005-06-30 Samsung Electronics Co Ltd 金属−絶縁体−金属キャパシタを含む半導体素子及びその製造方法
JP2006253268A (ja) * 2005-03-09 2006-09-21 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
JP2007005719A (ja) * 2005-06-27 2007-01-11 Renesas Technology Corp 半導体装置、及びそれを用いた送受信装置、並びにその半導体装置の製造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103367104A (zh) * 2012-03-26 2013-10-23 上海宏力半导体制造有限公司 一种对金属电容上电极的刻蚀方法
JP2014165458A (ja) * 2013-02-27 2014-09-08 Rohm Co Ltd 半導体装置および半導体装置の製造方法
JP2015230959A (ja) * 2014-06-04 2015-12-21 ルネサスエレクトロニクス株式会社 半導体装置

Also Published As

Publication number Publication date
US20090294902A1 (en) 2009-12-03
KR101187659B1 (ko) 2012-10-05
JP5212361B2 (ja) 2013-06-19
US8642400B2 (en) 2014-02-04
KR20100004986A (ko) 2010-01-13
US20120190154A1 (en) 2012-07-26
CN101636834B (zh) 2012-02-08
CN101636834A (zh) 2010-01-27
JPWO2008114418A1 (ja) 2010-07-01
US8169051B2 (en) 2012-05-01

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