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WO2008111324A1 - 透明導電膜およびその製造方法、ならびにその製造に使用されるスパッタリングターゲット - Google Patents

透明導電膜およびその製造方法、ならびにその製造に使用されるスパッタリングターゲット Download PDF

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Publication number
WO2008111324A1
WO2008111324A1 PCT/JP2008/050375 JP2008050375W WO2008111324A1 WO 2008111324 A1 WO2008111324 A1 WO 2008111324A1 JP 2008050375 W JP2008050375 W JP 2008050375W WO 2008111324 A1 WO2008111324 A1 WO 2008111324A1
Authority
WO
WIPO (PCT)
Prior art keywords
conductive film
transparent conductive
sputtering method
manufacturing
sputtering target
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/050375
Other languages
English (en)
French (fr)
Inventor
Ichiro Hayashi
Hidefumi Odaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AGC Inc
Original Assignee
Asahi Glass Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Glass Co Ltd filed Critical Asahi Glass Co Ltd
Priority to JP2009503916A priority Critical patent/JP5146443B2/ja
Publication of WO2008111324A1 publication Critical patent/WO2008111324A1/ja
Priority to US12/559,034 priority patent/US20100003495A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/453—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
    • C04B35/457—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates based on tin oxides or stannates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
    • H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Structural Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Non-Insulated Conductors (AREA)
  • Manufacturing Of Electric Cables (AREA)

Abstract

　本発明は、スパッタリング法、特にＤＣスパッタリング法、ＤＣパルススパッタリング法、ＡＣスパッタリング法およびＭＦスパッタリング法により透明導電膜を形成するのに好適な酸化スズ系ターゲットを提供することを目的とする。本発明は、スパッタリング法を用いて透明導電膜を形成する際に使用されるスパッタリングターゲットであって、前記スパッタリングターゲットは、酸化スズを主成分として含み、ニオブ、タングステン、タンタル、ビスマスおよびモリブデンからなるＡドーパント群から選択される少なくとも一つの元素と、銅元素と、をドーパントとして含むスパッタリングターゲットに関する。
PCT/JP2008/050375 2007-03-14 2008-01-15 透明導電膜およびその製造方法、ならびにその製造に使用されるスパッタリングターゲット Ceased WO2008111324A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009503916A JP5146443B2 (ja) 2007-03-14 2008-01-15 透明導電膜およびその製造方法、ならびにその製造に使用されるスパッタリングターゲット
US12/559,034 US20100003495A1 (en) 2007-03-14 2009-09-14 Transparent conductive film and method for manufacturing the transparent conductive film, and sputtering target used in the method

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007064690 2007-03-14
JP2007-064690 2007-03-14

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/559,034 Continuation US20100003495A1 (en) 2007-03-14 2009-09-14 Transparent conductive film and method for manufacturing the transparent conductive film, and sputtering target used in the method

Publications (1)

Publication Number Publication Date
WO2008111324A1 true WO2008111324A1 (ja) 2008-09-18

Family

ID=39759267

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/050375 Ceased WO2008111324A1 (ja) 2007-03-14 2008-01-15 透明導電膜およびその製造方法、ならびにその製造に使用されるスパッタリングターゲット

Country Status (5)

Country Link
US (1) US20100003495A1 (ja)
JP (1) JP5146443B2 (ja)
KR (1) KR20090122233A (ja)
CN (1) CN101631892A (ja)
WO (1) WO2008111324A1 (ja)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011019039A1 (ja) * 2009-08-14 2011-02-17 旭硝子株式会社 透明導電膜付基板およびプラズマディスプレイパネル用基板
WO2011019040A1 (ja) * 2009-08-14 2011-02-17 旭硝子株式会社 透明導電膜付基板およびプラズマディスプレイパネル用基板
WO2016031942A1 (ja) * 2014-08-29 2016-03-03 国立研究開発法人産業技術総合研究所 電解質シート及びその製造方法
CN106876508A (zh) * 2017-02-22 2017-06-20 中国科学院合肥物质科学研究院 铋‑氧化锡深紫外光探测器及其制备方法
KR20220036347A (ko) * 2020-09-15 2022-03-22 제이엑스금속주식회사 Cu-W-O 스퍼터링 타깃 및 산화물 박막
JPWO2023032456A1 (ja) * 2021-09-01 2023-03-09

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102617050A (zh) * 2011-01-28 2012-08-01 鸿富锦精密工业（深圳）有限公司 镀膜玻璃及其制备方法
CN103606389B (zh) * 2013-10-28 2016-11-16 中国科学院长春光学精密机械与物理研究所 高导电性无机、金属掺杂多层结构透明导电薄膜的制备方法
US20160155803A1 (en) * 2014-11-28 2016-06-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor Device, Method for Manufacturing the Semiconductor Device, and Display Device Including the Semiconductor Device
CN105154841B (zh) * 2015-09-30 2017-06-16 中国科学院合肥物质科学研究院 铋掺杂氧化锡薄膜的制备方法
TWI765654B (zh) * 2021-04-09 2022-05-21 光洋應用材料科技股份有限公司 複合陶瓷靶材、其製法以及複合陶瓷薄膜與其製法
CN118754642B (zh) * 2024-06-13 2025-04-01 深圳众诚达应用材料股份有限公司 一种应用于高紫外透过薄膜的氧化锡基靶材及其制备方法
CN118724584B (zh) * 2024-08-06 2025-04-25 深圳众诚达应用材料股份有限公司 一种低电阻的氧化锡基靶材及其制备方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000273622A (ja) * 1999-03-26 2000-10-03 Mitsui Mining & Smelting Co Ltd 薄膜形成用材料
JP2000281431A (ja) * 1999-03-30 2000-10-10 Mitsui Mining & Smelting Co Ltd ＳｎＯ２系焼結体、薄膜形成用材料および導電膜

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000273622A (ja) * 1999-03-26 2000-10-03 Mitsui Mining & Smelting Co Ltd 薄膜形成用材料
JP2000281431A (ja) * 1999-03-30 2000-10-10 Mitsui Mining & Smelting Co Ltd ＳｎＯ２系焼結体、薄膜形成用材料および導電膜

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
WANG C.-M. ET AL.: "Microstructure and nonlinear electrical characteristics of SnO2.CuO.Nb2O5 system", J. MATER. SCI., vol. 41, no. 4, 2006, pages 1273 - 1275, XP019211588 *

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011019039A1 (ja) * 2009-08-14 2011-02-17 旭硝子株式会社 透明導電膜付基板およびプラズマディスプレイパネル用基板
WO2011019040A1 (ja) * 2009-08-14 2011-02-17 旭硝子株式会社 透明導電膜付基板およびプラズマディスプレイパネル用基板
CN102471147A (zh) * 2009-08-14 2012-05-23 旭硝子株式会社 带透明导电膜的基板及等离子体显示器面板用基板
CN102471145A (zh) * 2009-08-14 2012-05-23 旭硝子株式会社 带透明导电膜的基板及等离子体显示器面板用基板
JPWO2016031942A1 (ja) * 2014-08-29 2017-08-17 国立研究開発法人産業技術総合研究所 電解質シート及びその製造方法
WO2016031942A1 (ja) * 2014-08-29 2016-03-03 国立研究開発法人産業技術総合研究所 電解質シート及びその製造方法
CN106876508A (zh) * 2017-02-22 2017-06-20 中国科学院合肥物质科学研究院 铋‑氧化锡深紫外光探测器及其制备方法
KR20220036347A (ko) * 2020-09-15 2022-03-22 제이엑스금속주식회사 Cu-W-O 스퍼터링 타깃 및 산화물 박막
KR102693901B1 (ko) 2020-09-15 2024-08-12 제이엑스금속주식회사 Cu-W-O 스퍼터링 타깃 및 산화물 박막
JPWO2023032456A1 (ja) * 2021-09-01 2023-03-09
WO2023032456A1 (ja) * 2021-09-01 2023-03-09 三井金属鉱業株式会社 酸化物焼結体及びその製造方法並びにスパッタリングターゲット材
JP7480439B2 (ja) 2021-09-01 2024-05-09 三井金属鉱業株式会社 酸化物焼結体及びその製造方法並びにスパッタリングターゲット材
JP7557648B2 (ja) 2021-09-01 2024-09-27 三井金属鉱業株式会社 酸化物焼結体及びその製造方法並びにスパッタリングターゲット材

Also Published As

Publication number Publication date
KR20090122233A (ko) 2009-11-26
CN101631892A (zh) 2010-01-20
JPWO2008111324A1 (ja) 2010-06-24
US20100003495A1 (en) 2010-01-07
JP5146443B2 (ja) 2013-02-20

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