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WO2008081741A1 - 抵抗変化型素子および抵抗変化型記憶装置 - Google Patents

抵抗変化型素子および抵抗変化型記憶装置 Download PDF

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Publication number
WO2008081741A1
WO2008081741A1 PCT/JP2007/074556 JP2007074556W WO2008081741A1 WO 2008081741 A1 WO2008081741 A1 WO 2008081741A1 JP 2007074556 W JP2007074556 W JP 2007074556W WO 2008081741 A1 WO2008081741 A1 WO 2008081741A1
Authority
WO
WIPO (PCT)
Prior art keywords
electrode
resistance variable
storage device
resistance
variable element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2007/074556
Other languages
English (en)
French (fr)
Inventor
Shunsaku Muraoka
Koichi Osano
Satoru Fujii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Panasonic Holdings Corp
Original Assignee
Panasonic Corp
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Corp, Matsushita Electric Industrial Co Ltd filed Critical Panasonic Corp
Priority to US12/518,400 priority Critical patent/US8018760B2/en
Priority to CN200780029617.4A priority patent/CN101501851B/zh
Priority to JP2008513046A priority patent/JP4202411B2/ja
Publication of WO2008081741A1 publication Critical patent/WO2008081741A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0007—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising metal oxide memory material, e.g. perovskites
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of switching materials, e.g. deposition of layers
    • H10N70/026—Formation of switching materials, e.g. deposition of layers by physical vapor deposition, e.g. sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H10N70/8836—Complex metal oxides, e.g. perovskites, spinels
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/30—Resistive cell, memory material aspects
    • G11C2213/31—Material having complex metal oxide, e.g. perovskite structure
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/72—Array wherein the access device being a diode

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)

Abstract

　本発明の抵抗変化型素子およびこれを用いた抵抗変化型記憶装置は、第１電極と、第２電極と、第１電極（２）と第２電極（４）との間に配設され第１電極（２）と第２電極（４）とに電気的に接続された抵抗変化層（３）とを備え、抵抗変化層（３）が（ＺｎｘＦｅ１－ｘ）Ｆｅ２Ｏ４の化学式で表されるスピネル構造を有する材料を含み、第１電極（２）と第２電極（４）との間に第１の電圧パルスを印加することで第１電極（２）と第２電極（４）との間の電気抵抗が上昇し、第１電極（２）と第２電極（４）との間に第１の電圧パルスと極性の等しい第２の電圧パルスを印加することで第１電極（２）と第２電極（４）との間の電気抵抗が低下する性質を有する抵抗変化型素子（１０）およびこれを用いた抵抗変化型記憶装置である。
PCT/JP2007/074556 2006-12-28 2007-12-20 抵抗変化型素子および抵抗変化型記憶装置 Ceased WO2008081741A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US12/518,400 US8018760B2 (en) 2006-12-28 2007-12-20 Resistance variable element and resistance variable memory apparatus
CN200780029617.4A CN101501851B (zh) 2006-12-28 2007-12-20 电阻变化型元件和电阻变化型存储装置
JP2008513046A JP4202411B2 (ja) 2006-12-28 2007-12-20 抵抗変化型素子および抵抗変化型記憶装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006-354218 2006-12-28
JP2006354218 2006-12-28

Publications (1)

Publication Number Publication Date
WO2008081741A1 true WO2008081741A1 (ja) 2008-07-10

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Family Applications (1)

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PCT/JP2007/074556 Ceased WO2008081741A1 (ja) 2006-12-28 2007-12-20 抵抗変化型素子および抵抗変化型記憶装置

Country Status (4)

Country Link
US (1) US8018760B2 (ja)
JP (1) JP4202411B2 (ja)
CN (1) CN101501851B (ja)
WO (1) WO2008081741A1 (ja)

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US20100008127A1 (en) 2010-01-14
CN101501851B (zh) 2010-11-17
CN101501851A (zh) 2009-08-05
JPWO2008081741A1 (ja) 2010-04-30
JP4202411B2 (ja) 2008-12-24
US8018760B2 (en) 2011-09-13

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