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WO2008065977A1 - Procédé d'exposition, procédé de formation de motif, dispositif d'exposition, et procédé de fabrication du dispositif - Google Patents

Procédé d'exposition, procédé de formation de motif, dispositif d'exposition, et procédé de fabrication du dispositif Download PDF

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Publication number
WO2008065977A1
WO2008065977A1 PCT/JP2007/072715 JP2007072715W WO2008065977A1 WO 2008065977 A1 WO2008065977 A1 WO 2008065977A1 JP 2007072715 W JP2007072715 W JP 2007072715W WO 2008065977 A1 WO2008065977 A1 WO 2008065977A1
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WO
WIPO (PCT)
Prior art keywords
substrate
pattern
exposure
exposure apparatus
mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2007/072715
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English (en)
Japanese (ja)
Inventor
Kei Nara
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Nikon Corp
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Nikon Corp
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Filing date
Publication date
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Publication of WO2008065977A1 publication Critical patent/WO2008065977A1/fr
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Ceased legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70208—Multiple illumination paths, e.g. radiation distribution devices, microlens illumination systems, multiplexers or demultiplexers for single or multiple projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems

Definitions

  • the present invention relates to an exposure method, a pattern formation method, an exposure apparatus, and a device manufacturing method, and more specifically, an exposure method and pattern used when manufacturing a liquid crystal display element or a semiconductor element.
  • the present invention relates to a forming method, an exposure apparatus suitable for carrying out the exposure method, the exposure method, a pattern forming method, and a device manufacturing method using the exposure apparatus.
  • a scanning exposure apparatus having a plurality of projection optical systems is used relatively frequently in order to expand an area that can be exposed at one time as a substrate for a display device becomes larger.
  • the light flux emitted from the light source is made uniform through an optical system including a fly-eye lens, etc., and then shaped into a desired shape by a field stop to illuminate the mask pattern surface.
  • a plurality of illumination optical systems are provided.
  • the plurality of illumination optical systems illuminate different partial areas (illumination areas) on the mask.
  • the light beams that have passed through the mask form mask pattern images in different projection areas on the substrate through different projection optical systems. Then, the entire surface of the pattern area on the mask is transferred onto the substrate by synchronizing the mask and the substrate and scanning the projection optical system.
  • step-and-scan type scanning exposure apparatuses are becoming mainstream in current liquid crystal exposure apparatuses (see, for example, Patent Document 1).
  • the mask and glass plate are moved in synchronization with the scanning direction (the direction parallel to the long or short side of the plate) and formed on the mask.
  • the scanning (scanning) exposure operation that transfers the pattern to one partition area (shot area) on the plate via the projection optical system and the stepping operation that moves stepwise in the non-scanning direction orthogonal to the scanning direction are alternated Repeated.
  • 6-sided taking 6 liquid crystal display element substrates from one glass plate and 8-sided taking 8 liquid crystal display element substrates from one glass plate are generally performed.
  • the target chamfering is performed such that six scan exposure operations are performed in the case of six chamfering, and eight scan exposure operations are performed in the case of eight chamfering. Since the number of scan exposures depends on the number, the tact time has become longer as the number of chamfers increases. In addition, since the tact time increases / decreases depending on the number of chamfers, the performance of the entire line including the exposure apparatus and the coater's developer changes depending on the number of chamfers when inline connection is made with the coater's developer.
  • Patent Document 1 Japanese Patent Laid-Open No. 2006-195353
  • the present invention has been made under the circumstances described above. From a first viewpoint, the present invention has a matrix arrangement of m rows n ⁇ IJ (m ⁇ n) on a substrate, and there are m X n pieces. In the exposure method for forming a pattern region, (m X n) pattern regions are formed in a matrix arrangement on the substrate by performing exposure less than (m X n) times. .
  • the target number of pattern areas can be formed on the substrate with a smaller number of exposures than the target number of pattern areas (number of chamfers) (m X n)
  • the number of chamfers depends on the number of chamfers. Throughput can be improved compared to the case where exposure was performed a number of times.
  • a step of exposing a substrate using the exposure method of the present invention a step of developing the exposed substrate; a step of processing the developed substrate;
  • a first device manufacturing method including:
  • the etching S is a force S corresponding to the above-described process, and “processing the substrate” means that the substrate is not limited to these, and some processing is performed on the substrate.
  • processing is used in terms of force.
  • the substrate is exposed using the exposure method of the present invention, the production of the device It is possible to improve the performance.
  • the present invention provides a pattern formation that forms (m X n) pattern regions on a substrate in a matrix arrangement of m rows and n columns (m ⁇ n) by a scanning operation.
  • the method is a pattern forming method in which (m X n) pattern regions are formed in a matrix arrangement on the substrate by scanning operations less than (m X n) times.
  • the scan operation may be an operation for forming a pattern on the substrate.
  • the scanning operation is not limited to the exposure operation.
  • An example of the scanning operation is a substrate scanning operation.
  • the target number of pattern areas can be formed on the substrate by the number of scan operations less than the target number of pattern areas (number of chamfers) (m X n), the chamfering is performed.
  • the throughput can be improved compared to the number of scan operations depending on the number.
  • the present invention includes a step of forming a pattern on a substrate using the pattern forming method of the present invention; and a step of processing the substrate on which the pattern is formed. 2 is a device manufacturing method.
  • an exposure apparatus for forming a substantially rectangular pattern region on a substrate in a matrix arrangement of m rows and n columns (m ⁇ n), wherein the matrix columns
  • a pattern generating device capable of forming the pattern region by exposing at least two regions apart from each other in a predetermined direction parallel to the direction; a substrate driving device for driving the substrate; and the m rows on the substrate.
  • a control system that controls the pattern generation device and the substrate driving device so that the movement in the direction is alternately repeated.
  • the control system causes the pattern generation device and the substrate driving device to alternately repeat the formation of at least two pattern regions separated by a natural number k times the size of the substrate and the movement of the substrate in the predetermined direction. Be controlled.
  • the pattern generation device and the substrate driving device to alternately repeat the formation of at least two pattern regions separated by a natural number k times the size of the substrate and the movement of the substrate in the predetermined direction. Be controlled.
  • m X n ⁇ exposures that is, the number of exposures less than the target number of pattern areas (number of chamfers) (m X n)
  • a pattern area of (m ⁇ n) can be formed. Therefore, the throughput can be improved as compared with the case where (m X n) pattern regions are formed on the substrate by the same number of exposures (m X n) as the target chamfering number.
  • an exposure apparatus that exposes a substrate to form a plurality of rectangular pattern regions on the substrate, each of which forms a pattern corresponding to the pattern region.
  • a driving system that drives the mask stage system and the substrate stage.
  • each mask is scanned in the scanning direction by the drive system in synchronization with the substrate stage on which the substrate is mounted, with the illumination system illuminating a plurality of masks with illumination light almost simultaneously.
  • the mask stage system and the substrate stage can be driven. Therefore, the patterns respectively formed on the plurality of masks can be transferred almost simultaneously to different regions on the substrate through the corresponding projection optical systems. In other words, it is possible to transfer the pattern formed on each of the plurality of masks to different areas on the substrate by the scanning exposure method. Therefore, the throughput can be improved as compared with the case where one pattern region is formed on the substrate by one scanning exposure.
  • the present invention provides an exposure apparatus that forms m X n pattern regions on a substrate in a matrix arrangement of m rows and n columns (m ⁇ n), A pattern generation device capable of forming the pattern region by exposing two regions apart from each other in a direction parallel to the column direction of the matrix; and detecting the marks formed on the substrate, and the matrix At least 2 spaced apart in a direction parallel to the column direction m mark detection systems; and at least some of the 2m mark detection systems formed near both ends of each of the two regions on the substrate that are simultaneously exposed.
  • the interval between the at least 2m mark detection systems is set so that the two detected marks can be detected simultaneously.
  • At least a part of the mark detection system can simultaneously detect each of the two marks formed in the vicinity of both end portions of each of the two regions to be exposed simultaneously on the substrate. Is possible. Therefore, it is possible to shorten the time required for the mark detection process and to improve the throughput as compared with the case of detecting the mark inside each area to be exposed.
  • a step of forming a pattern on a substrate using any of the first, second and third exposure apparatuses of the present invention A third device manufacturing method comprising: developing the substrate; and processing the developed substrate.
  • the present invention provides a display panel in which a display device is formed on a substrate depending on whether the first, second, and third device manufacturing methods of the present invention are! / It is.
  • FIG. 1 is a perspective view schematically showing a configuration of an exposure apparatus according to an embodiment.
  • FIG. 2 (A) is a plan view showing five image fields, two masks, and plates extracted from the two projection optical system modules in FIG. 1, and FIG. 2 (B) is a projection. It is a figure for demonstrating the substantial image feed of an optical system module.
  • FIG. 3 is a diagram for explaining the arrangement of alignment system AL;! To AL8.
  • FIG. 4 is a block diagram schematically showing a configuration of a control system of the exposure apparatus of one embodiment.
  • FIGS. 5 (A) and 5 (B) are diagrams showing a plate used in the case of 6 chamfering and 8 chamfering, and the arrangement of shot areas and alignment marks on the plate, respectively.
  • FIGS. 6 (A) to 6 (D) are diagrams for explaining the flow of alignment mark detection operation in the case of six chamfering.
  • Fig.7 shows the flow of alignment mark detection operation in case of 8-chamfering. It is a figure for demonstrating.
  • FIG. 8 is a diagram for explaining the arrangement and relationship between a mask in the case of 6 chamfering, a pattern area on the mask, and image fields of two projection optical system modules.
  • FIG. 9 (A) to FIG. 9 (D) are diagrams for explaining an exposure sequence in the case of six chamfering.
  • FIG. 10 is a diagram for explaining the arrangement and relationship between the mask in the case of eight chamfers, the pattern area on the mask, and the image fields of two projection optical system modules.
  • FIG. 11 (A) to FIG. 11 (D) are diagrams for explaining an exposure sequence in the case of eight chamfering.
  • Fig.12 [Fig.12] Fig.12 (A) and Fig.12 (B) adjust the positional relationship between the pattern areas PA and PB by adjusting the Y-axis direction position of the two masks in the case of 6 chamfering and 8 chamfering respectively. It is a figure which shows a method.
  • FIG. 13 is a flowchart for explaining a semiconductor device manufacturing method.
  • FIG. 14 is a flowchart for explaining a method of manufacturing a liquid crystal display element.
  • FIG. 1 shows a schematic configuration of a step-and-scan type liquid crystal exposure apparatus 10 suitable for carrying out the exposure method (and pattern formation method) according to the present invention.
  • the exposure apparatus 10 includes a plate stage 14 arranged along the XY plane (horizontal plane), the Z axis direction upward facing the plate stage, and the Y axis direction on substantially the same XY plane.
  • a pair of mask stages 12A and 12B arranged at a predetermined interval, and a plurality (in this case, five) of projection optical units 16A and 16B are arranged between the mask stages 12A and 12B and the plate stage 14, respectively.
  • illumination light for example, ultra-high pressure mercury run An ultraviolet emission line (eg, g-line, i-line, etc.) from a laser, ArF excimer laser light with a wavelength of 193 nm, or KrF excimer laser light with a wavelength of 248 nm is used.
  • An ultraviolet emission line eg, g-line, i-line, etc.
  • a rectangular mask 20A having a pattern region formed on one surface is placed, and similarly on the other mask stage 12B. Is mounted with a rectangular mask 20B having a pattern region formed on one surface (the Z-side surface in FIG. 1).
  • a large rectangular glass substrate (hereinafter referred to as “plate”) 22 is placed on the plate stage 14. This plate 22 is a substrate for a display device.
  • the mask stages 12A and 12B are driven in a predetermined scanning direction (here, X) by a pair of mask stage drive systems 24 4A and 24B (not shown in FIG. 1, see FIG. 4) including a linear motor or the like.
  • a predetermined scanning direction here, X
  • a pair of mask stage drive systems 24 4A and 24B including a linear motor or the like.
  • it is finely driven in the XY plane (including rotation around the Z axis ( ⁇ z rotation)).
  • the plate stage 14 includes a plate stage drive system 26 (Fig.
  • the plate stage 14 is driven by a minute drive in the Z-axis direction, tilt drive with respect to the XY plane (rotation around the X axis ( ⁇ X rotation), and rotation around the Y axis ( ⁇ y) by the plate stage drive system 26. Rotation)) is possible.
  • the positional information of the mask stages 12A and 12B is a mask interferometer system 28 including a plurality of interferometers each irradiating a measurement beam onto a reflecting surface fixed or formed on the mask stages 12A and 12B (not shown in FIG. 1).
  • the position information of the mask stages 12A and 12B thus measured is supplied to the main controller 50 (see FIG. 4).
  • the mask interferometer system 28 includes a plurality of laser interferometers (position detection devices) that detect the position (X position) in the X-axis direction of the mask stage 12A that supports the mask 20A, as shown in a simplified manner in FIG.
  • the mask interferometer system 28 is It is possible to measure the X position, Y position, and ⁇ z rotation amount (rotation information) of each of the stage 12A and 12B.
  • the force is shown so that the end face of the mask is irradiated with an interferometer beam (length measuring beam).
  • an interferometer beam length measuring beam.
  • movement not shown in the mask stages 12A and 12B A mirror (or mirror-finished reflecting surface) is provided, which is configured to irradiate an interferometer beam.
  • Position information (including rotation information (including ⁇ ⁇ rotation information, ⁇ ⁇ rotation information, and ⁇ y rotation information)) in the X-axis and Y-axis directions of the plate stage 14 is fixed or formed on the plate stage 14.
  • a plate interferometer system 30 (not shown in FIG. 1, see FIG. 4) including a plurality of interferometers each irradiating a measuring surface with a measurement beam, and the measured position information is supplied to the main controller 50 Has been.
  • the plate interferometer system 30 includes a plurality of laser interferometers (position detection devices) Pxl and ⁇ 2 that detect the X position of the plate stage 14 that supports the plate 22, and the Y position of the plate stage 14.
  • the plate interferometer system 30 can measure the X position, the Y position, and the ⁇ z rotation amount (rotation information) of the plate stage 14. Further, the plate interferometer system 30 is configured such that the measurement axis of each interferometer is not greatly deviated from the center of the virtual lens with respect to the plurality of projection modules PL Ml and PLM2.
  • a force indicating that the end surface of the plate is irradiated with an interferometer beam (measurement beam)
  • a movable mirror (not shown) is applied to the plate stage 14. (Or a mirrored reflective surface) is provided and is configured to irradiate an interferometer beam against it!
  • the position information of the plate stage 14 in the Z-axis direction is disclosed in a measurement system (not shown) that measures the surface position information of the surface of the plate 22, such as US Pat. No. 6,552,775. It is measured indirectly by the measurement system.
  • an encoder may be used in place of at least some of the interferometers constituting mask interferometer system 28 and plate interferometer system 30, or mask interferometer system 28 and plate interferometer.
  • An encoder system may be provided in addition to the system 30, and the position information of the mask stages 12A and 12B and the plate stage 14 may be measured by a hybrid system of an interferometer system and an encoder system.
  • the five projection optical units 16A, 16B, 16C, 16D, and 16E that constitute the one projection optical system module PLM1 have the Z-axis direction in which the respective optical axes are orthogonal to the XY plane. Has been.
  • the projection optical units 16A, 16B, 16C, 16D, and 16E those that form an erect image with a double-sided telecentric equal magnification system are used.
  • the projection optical units 16A, 16B, and 16C are arranged at predetermined intervals along the ⁇ axis direction, and the remaining projection optical units 16D and 16E are slightly shifted to the + X side (right side in FIG. 1) of the Y axis. They are arranged at predetermined intervals along the direction.
  • the five projection optical units 16A, 16B, 16C, 16D, and 16E are arranged in a so-called zigzag pattern to constitute an array of projection optical units, and the mask stage 12A and the plate stage 14 include When scanned in the X-axis direction (see arrows A1 and A3 in Figure 1), the image fields (projection areas) of the five projection optical units 16A, 16B, 16C, 16D, and 16E are masks 2 OA and The entire surface of the rectangular area (shot area) to be exposed on the plate 22 can be covered.
  • the image fields 16AI, 16BI, 16CI, 16DI, and 16EI of the projection optical units 16A, 16B, 16C, 16D, and 16E are trapezoidal as shown in the plan view of FIG. It has a staggered arrangement as shown in Fig. 2 (A).
  • the shape of these image fields is defined by a field stop (not shown) arranged in the illumination system 18A or in each projection optical unit.
  • the image fields 16AI, 16BI, 16CI, 16DI, and 16EI the image fields 16AI and 16CI that are located at the extreme ends in the Y-axis direction are each a table whose outer ends are straight lines parallel to the X-axis.
  • the remaining image fields 16BI, 16DI, and 16EI have the same isosceles trapezoid shape.
  • the image fields 16DI and 16EI are translated by a predetermined distance in the X direction, as shown in FIG. 2 (B), as a whole, the length is W3 and the width is B.
  • a rectangular area is formed.
  • the partial projection areas (image fields 16AI to 16EI) irradiated by the projection optical units 16A to 16E are overlapped and synthesized to form a substantial projection area (shown in FIG. 2B).
  • a rectangular area elongated in the Y-axis direction) is formed.
  • the five projection optical units 16A, 16B, 16C, 16D, and 16E that constitute the projection optical system module PLM1 are each a single rectangular image image shown in FIG. This is equivalent to a projection optical system having a threshold.
  • the projection optical units 16A, 16B, 16C, 16D, and 16E actually constitute the projection optical system module PLM1 as shown in FIG. 2A, but the projection optical units 16A, 16B, and 16C.
  • illustration of some components such as the housing of the projection optical system module PLM1 is omitted in FIG.
  • the other projection optical system module PLM2 is configured in exactly the same manner as the projection optical system module PLM1 described above.
  • the projection optical system having the same configuration as the projection optical system modules PLMl and PLM2 of this embodiment for example, see Japanese Patent Application Laid-Open No. 2001-215718 (corresponding to US Pat. No. 6,552,775). It is disclosed in detail.
  • the exposure apparatus 10 includes eight alignment systems AL1, AL2, AL3, AL4, AL5, AL6, AL7, and AL8 of the offifism system.
  • These eight alignment systems AL1, AL2, AL3, AL4, AL5, AL6, AL7, AL8 are positioned at a predetermined distance on the + X side of the projection optical modules PLM1, PLM2, as shown in FIG. Arranged at predetermined intervals along the Y-axis direction.
  • These eight alignment systems AL;! To AL8 are held above the plate stage 14 by a plate-like holding member 32 extending in the Y-axis direction along the XY plane, and the holding member is supported by a support member (not shown). Supported on the surface.
  • FIA Field Image Alignment
  • the image processing method that images the image of the target mark imaged on the light-receiving surface and the image of the index (not shown) using an image sensor (CCD) etc. and outputs the imaged signals
  • CCD image sensor
  • the target mark is irradiated with coherent detection light to detect scattered light or diffracted light generated from the target mark, or two diffracted lights generated from the target mark (for example, of the same order)
  • coherent detection light to detect scattered light or diffracted light generated from the target mark, or two diffracted lights generated from the target mark (for example, of the same order)
  • the alignment sensor for detecting the interference by singly or in combination.
  • the placement of alignment AL;! To AL8 will be further described later.
  • a mark plate MP having a longitudinal direction in the Y-axis direction is disposed in the vicinity of the ⁇ X side end of the upper surface of the plate stage 14.
  • the surface of the mark plate MP is placed on the plate stage 14.
  • the height is set so as to be substantially flush with the surface of the placed plate 22.
  • On the surface of this mark plate MP as an example, there are 8 reference mark areas corresponding to the above-mentioned eight alignment systems AL1, AL2, AL3, AL4, 8 and 6 and 7 and 8, respectively. ⁇ [Is formed. That is, the eight reference mark areas on the mark plate MP can be detected simultaneously and individually with the eight alignment systems AL1, AL2, AL3, AL4, AL5, AL6, AL7, AL8. .
  • the remaining six reference mark areas FM excluding the two reference mark areas FM in the center are respectively below.
  • Six mark image detection systems MD1, MD2, MD3, MD4, MD5, and MD6 (not shown in FIG. 1, refer to FIG. 4), are arranged at positions. ing.
  • the alignment sequence of the plate 22 in the case where so-called six chamfering is performed in the exposure apparatus 10 of the present embodiment will be described.
  • the plate 22 for example, a rectangular glass plate having an L1 of 2800 mm and an L2 force S2400 mm, that is, a ratio of L1 to L2 of about 32:27 is used.
  • the positional relationship force S of each of the six alignment marks AM located in the same straight line in the Y-axis direction, the alignment system AL;! To AL5, AL7 The arrangement of 24 alignment marks AM is determined so as to almost coincide with.
  • the main controller 50 drives the plate stage 14 in the XY plane while monitoring the position information of the plate stage 14 measured by the plate interferometer system 30, so that FIG.
  • the main controller 50 has the alignment system Hashi 1, Hashi 2, Hashi 3, Hachi 4, Hashi Hoshi 5 with the plate stage 14 positioned at the position shown in FIG. , Measure the position information of the six alignment marks AM (position information of the alignment marks centered on the unillustrated index) almost simultaneously.
  • the main controller 50 determines the XY plane of the six alignment marks AM based on the measurement results of the position information of the six alignment marks AM and the measurement values of the plate interferometer system 30 at the time of the measurement.
  • the position information (XY coordinate value) is calculated and stored in a memory (not shown).
  • main controller 50 monitors the position information of plate stage 14 measured by plate interferometer system 30 and moves plate stage 14 in the + X direction indicated by arrow B. Drive the distance and position it at the position shown in Fig. 6 (B). And The main controller 50 sets the alignment system Hashi 1, Hashi 2, Hashi 3, Hachi 4, Hashi 5, Hashi 7 with the plate stage 14 positioned at the position shown in FIG.
  • the position information (position information of the alignment mark centered on the unillustrated index) is measured almost simultaneously, and the measurement result and the plate interferometer at the time of measurement are used.
  • position information XY coordinate values of the six alignment marks AM in the XY plane is calculated and stored in a memory (not shown).
  • main controller 50 monitors the position information of plate stage 14 measured by plate interferometer system 30 and moves plate stage 14 in the + X direction indicated by arrow B. Drive the distance and position it at the position shown in Fig. 6 (C). Then, the main controller 50 positions the alignment stage 8, 1, 2, 2, 3, 4, 4, 5, 5, 8, with the plate stage 14 positioned at the position shown in FIG. 6 (C). 7 is used to measure the position information (position information of the alignment mark centered on the unillustrated index) of the six alignment marks 8 ⁇ [almost at the same time. Based on the measurement values of the interferometer system 30, position information (XY coordinate values) of the six alignment marks AM in the XY plane is calculated and stored in a memory (not shown).
  • main controller 50 monitors the position information of plate stage 14 measured by plate interferometer system 30 and moves plate stage 14 in the + X direction indicated by arrow B. Drive the distance and position it at the position shown in Fig. 6 (D). Then, the main control unit 50 positions the alignment stage 8, 1, 2, 2, 3, 4, 4, 5, 5, 8, with the plate stage 14 positioned at the position shown in FIG. 6 (D). 7 is used to measure the position information (position information of the alignment mark centered on the unillustrated index) of the six alignment marks 8 ⁇ [almost at the same time. Based on the measurement values of the interferometer system 30, position information (XY coordinate values) of the six alignment marks AM in the XY plane is calculated and stored in a memory (not shown).
  • 6 alignment marks on the plate 22 are simultaneously measured using 6 alignment systems of 8 alignment systems AL;! To AL8.
  • the alignment mark position information of 6 X 4 24 points (4 points in each of the six shot areas) can be measured only by performing simultaneous measurement of the alignment marks four times.
  • the alignment sequence of the plate 22 when the exposure apparatus 10 performs so-called eight chamfering will be described.
  • the plate 22 for example, a rectangular glass plate having L1 of 2800 mm and L2 force S2400 mm, that is, a ratio of L1 to L2 of about 36:32 is used.
  • 32 alignment marks AM are formed in the vicinity of the four corners of each of the eight shot regions of the plate 22, one in total. .
  • the positional relationship force of each of the eight alignment marks AM that are positioned on the same straight line in the Y-axis direction is almost identical to the positional relationship of alignment system AL;!
  • the arrangement of 32 alignment marks AM is determined.
  • the main controller 50 drives the plate stage 14 in the XY plane while monitoring the position information of the plate stage 14 measured by the plate interferometer system 30, so that FIG. ).
  • Fig. 7 (A) four shot areas SA2, SA4, SA6, aligned in the Y-axis direction on the plate 22 within the detection field of alignment systems AL1, AL2, AL3, AL4, AL5, AL6, AL7, AL8.
  • main controller 50 positions position information of the eight alignment marks AM using alignment system AL;! To AL8 in a state where plate stage 14 is positioned at the position shown in FIG. (Alignment mark position information centered on an unillustrated index) is measured almost simultaneously, and based on the measurement result and the measured value of the plate interferometer system 30 at the time of measurement, eight alignment marks The position information (XY coordinate value) in the XY plane of AM is calculated and stored in a memory (not shown).
  • main controller 50 monitors the position information of plate stage 14 measured by plate interferometer system 30 and moves plate stage 14 in the + X direction indicated by arrow C. Drive the distance and position it at the position shown in Fig. 7 (B). Then, main controller 50 positions position information (index not shown) of eight alignment marks AM using alignment system AL;! To AL8 with plate stage 14 positioned at the position shown in FIG. (Alignment mark position information centered on) is measured almost simultaneously, and based on the measurement results and the measured values of the plate interferometer system 30 at the time of measurement, eight alignment marks are measured. The position information (XY coordinate value) of the ment mark AM in the XY plane is calculated and stored in the memory (not shown).
  • main controller 50 monitors the position information of plate stage 14 measured by plate interferometer system 30 and moves plate stage 14 in the + X direction indicated by arrow C. Drive the distance and position it at the position shown in Fig. 7 (C). Then, the main controller 50 positions the eight alignment marks AM using the alignment system AL;! To AL8 (index not shown) with the plate stage 14 positioned at the position shown in FIG. (Alignment mark position information centered at the center) is measured almost simultaneously, and based on the measurement results and the measured values of the plate interferometer system 30 at the time of measurement, the eight alignment marks AM within the XY plane are measured. Calculate the position information (XY coordinate value) and store it in the memory (not shown).
  • main controller 50 monitors the position information of plate stage 14 measured by plate interferometer system 30 and moves plate stage 14 in the + X direction indicated by arrow C. Drive the distance and position it at the position shown in Fig. 7 (D). Then, main controller 50 positions position information (index not shown) of eight alignment marks AM using alignment system AL;! To AL8 with plate stage 14 positioned at the position shown in FIG. (Alignment mark position information centered at the center) is measured almost simultaneously, and based on the measurement results and the measured values of the plate interferometer system 30 at the time of measurement, the eight alignment marks AM within the XY plane are measured. Calculate the position information (XY coordinate value) and store it in the memory (not shown).
  • the width in the non-scanning direction (here, the Y-axis direction orthogonal to the X-axis direction) perpendicular to the scanning direction of the substantial image field of each of the projection optical system modules PLM1 and PLM2 is also shown in FIG. As mentioned above, it is W3. Also, the distance in the non-scanning direction between the edges of the projection optical modules PLM1 and PLM2 in the non-scanning direction is W1, and the edges of the projection optical modules PLM1 and PLM2 that are far from each other in the image field Let W2 be the distance between them in the non-scanning direction.
  • Wl, W2, and W3 are set so as to satisfy the following equations (6) to (8), respectively.
  • pattern areas PA and PB are formed on the masks 20A and 20B mounted on the mask stages 12A and 12B, respectively.
  • the same pattern for the display element is formed in the pattern areas PA and PB.
  • the width of the blank area on the + Y side of the mask 12A (the pattern or area where the pattern is not formed) is as narrow as possible (for example, approximately zero), and the width of the blank area on the Y side is widened. Thus, it is formed on the mask substrate of the mask 20A closer to the + Y side.
  • the width of the blank area on the Y side of the mask 20B is as narrow as possible (eg, almost zero), and the width of the blank area on the + Y side is widened on the mask substrate of the mask 20B. It is formed on the Y side.
  • the distance between the pattern areas PA and PB shown in Fig. 8 PI is about L2 / 3
  • the distance P2 in the non-scanning direction between the far edges of PA and PB in the pattern area is about L2.
  • masks 20A and 20B are mounted on mask stages 12A and 12B by a transport system (not shown), respectively, and the mark image detection system MD;! To MD6, alignment systems AL1 to AL8, and Mark plate MP using mask reference mark and alignment system AL;! ⁇ AL8 baseline measurement force etc. It is assumed that the procedure is performed in the same way as normal.
  • main controller 50 measures the position information of a total of 24 alignment marks AM on plate 22 (see FIG. 5A) according to the procedure described above! Save measurement results to memory.
  • the pattern areas PA and PB of the masks 20A and 20B are transferred to the six shot areas S1 to S6 on the plate 22 in the following procedure.
  • main controller 20 monitors the measurement values of plate interferometer system 30 and mask interferometer system 28, and the result of measurement of positional information of alignment mark AM performed in advance, and Based on the measurement result of the baseline, the plate stage 14 and the mask stages 12A and 12B are moved to the acceleration start positions for exposure of the shot areas SA2 and SA6 on the plate 22, respectively.
  • main controller 20 starts scanning plate stage 14 in the + X direction as indicated by arrow A3 in FIG. 1, and in synchronization with this, mask stages 12A and 12B are respectively indicated by arrows. Scanning is started as indicated by Al and A2.
  • the plate stage 14 and the mask stages 12A and 12B reach the target scanning speed, respectively, the plate stage 14 and the mask stage 12A, and the plate stage 14 and the mask stage 12B reach the constant speed synchronization state.
  • the pattern areas PA and PB of the masks 20A and 20B begin to be illuminated with illumination light, and scanning exposure on the shot areas S A2 and SA6 on the plate 22 is started.
  • the field stop (not shown) inside the illumination systems 18A and 18B is controlled so that illumination light is not irradiated to the outside of the pattern areas PA and PB of the masks 20A and 20B. Yes.
  • FIG. 9 (A) the force shown in the figure is as if the plate 22 (and masks 20A and 20B) are fixed and the projection optical system modules PL Ml and PLM2 are moving. In this case, the projection optical modules PLM1 and PLM2 are fixed, and the plate 22 (and masks 20A and 20B) moves (see FIG. 1). In FIG. 9 (B) to FIG. 9 (D), the projection optical system modules PLM1 and PLM2 are moved relative to the plate 22 for the same reason! The
  • main controller 50 monitors the measurement value of plate interferometer system 30, and based on the result of measurement of position information of alignment mark AM performed in advance and the measurement result of baseline. Then, in order to move the plate stage 14 to the acceleration start position for the exposure of the shot area SA4 on the plate 22, the plate stage 14 is moved in the + Y direction approximately the same distance as the dimension of the shot area in the Y-axis direction.
  • main controller 50 performs scanning exposure on shot area SA4 by scanning plate stage 14 and mask stage 12A (and 12B) in synchronism with each other in the reverse direction.
  • FIG. 9B shows a state immediately after this scanning exposure is started. In this case, the illumination of illumination light from the illumination system 18B is stopped by the main controller 50.
  • Main controller 50 repeats the same procedure thereafter, and performs simultaneous scanning exposure for transferring pattern areas PA and PB to shot areas SA1 and SA5 on plate 22 (see FIG. 9C), shots Scan exposure (see Fig. 9 (D)) is performed to transfer pattern area PA to area SA3.
  • the width of the blank area on the + Y side becomes wide, and the width of the blank area on the Y side becomes as narrow as possible (for example, approximately zero Is formed on the mask substrate of the mask 20A so as to be closer to the Y side.
  • the pattern area ⁇ is placed on the glass substrate of the mask 20 — so that the width of the blank area on the heel side becomes wider and the width of the blank area on the heel side becomes as narrow as possible (for example, almost zero). It is biased to the side.
  • the interval P1 is about L1 / 4
  • the distance ⁇ 2 is about 3 X (L1 / 4).
  • Main controller 50 performs step-and-scan exposure by the same sequence as in the case of the above-described six chamfering (partially different control of illumination system 18B), so that shot area SA2 , Pattern area PA, ⁇ almost simultaneously transferred to SA6 (see Fig. 11 (A)), pattern area PA, ⁇ ⁇ ⁇ ⁇ almost transferred to shot area SA4, SA8 (see Fig. 11 (B)), shot area SA1,,
  • the pattern areas PA and ⁇ ⁇ ⁇ ⁇ are transferred almost simultaneously to SA5 (see FIG. 11C), and the pattern areas PA and ⁇ ⁇ ⁇ ⁇ are transferred almost simultaneously to the shot areas SA3 and SA7 (see FIG. 11D).
  • eight chamfering can be realized with four scanning exposures.
  • FIGS. 11A to 11D the shot area where the pattern area has been transferred immediately before is shown with a shadow line, and the shot area where the pattern area has been transferred before that is shown. The area is shown with a mesh pattern!
  • the plate stage 14 and the mask stages 12A and 12B can be driven according to the same sequence. Even when in-line connection with the coater / developers is possible, the tact time can be made almost constant regardless of whether the chamfering is done with 6 or 8 chamfers, and the entire line including the exposure system and the coater / developers. Performance can be maintained.
  • a pattern region of m rows and ⁇ columns (m ⁇ n), for example, 3 rows and 2 columns, or 4 rows and 2 columns, is formed on the plate 22.
  • the two shot areas separated by the same distance as the dimension in the Y-axis direction of the shot area in the Y-axis direction parallel to the column direction of the matrix on the plate 22, and the Y-axis of the plate 22
  • the main controller 50 causes the lighting system 18A, 18B and mask stages 12A and 12B (mask stage drive systems 24A and 24B) and plate stage 14 (plate stage drive system 26) are controlled.
  • main controller 50 drives mask stage while illumination systems 18A and 18B illuminate a plurality of masks 20A and 20B with illumination light almost simultaneously.
  • the mask stages 12A and 12B and the plate stage are scanned in the scanning direction in synchronization with the plate stage 14 on which the plate 22 is mounted via the systems 24A and 24B and the plate stage drive system 26. 14 can be driven.
  • the patterns formed on each of the plurality of masks can be platened through the five projection optical units 16A, 16B, 16C, 16D, and 16E, respectively, which can support the corresponding projection optical system modules PLM1 and PLM2. It can be transferred to different areas on 22 almost simultaneously. That is, the patterns formed on the plurality of masks can be transferred to different regions on the plate 22 by the scanning exposure method. Therefore, the throughput can be improved compared to the case where one pattern area is formed on the plate 22 by one scanning exposure.
  • the number of target pattern areas (number of chamfers) is also determined during the exposure of the first layer by the above-described sequence. )
  • the target number of pattern areas can be formed on the plate 22 with fewer exposures than (m X n).
  • a small mask is used without using a large mask.
  • the four scan exposures required can improve the cost performance of the equipment.
  • infrastructure for manufacturing a large mask is not required even if the substrate is enlarged.
  • two pattern regions on the plate 22 are separated by the same distance as the dimension of the pattern region (shot region) in the predetermined direction with respect to a predetermined direction parallel to the matrix column.
  • the present invention is not limited to this. That is, two pattern areas separated by a natural number k times, for example, twice or three times the dimension of the pattern area (shot area) in the predetermined direction with respect to a predetermined direction parallel to the matrix column are placed on the plate (substrate). It may be formed, or not limited to two pattern areas, but three or more pattern areas may be simultaneously formed on the substrate. In any case, the target number of pattern areas can be formed on the plate 22 with a smaller number of exposures than the number of target pattern areas (the number of chamfers) (m X n).
  • the present invention is not limited to this, and two masks are used as in the above embodiment, and the interval between the two masks in the non-scanning direction is set.
  • m x n pattern areas are formed in a matrix on the substrate by (m / 2 X n) exposures. It is also possible. In this case, if m is an odd number, m x n pattern regions may be formed in a matrix arrangement on the substrate by Km + l) / 2 X n ⁇ exposures.
  • the force S described for the case where the masks 20A and 20B are mounted on separate mask stages is not limited to this, and the masks 20A and 2 are not limited to a single mask stage.
  • the OB force S and the non-scanning direction may be arranged at a predetermined distance.
  • the pattern stage PA and PB of the masks 20A and 20B can be transferred onto the plate 22 almost simultaneously by scanning the mask stage in synchronization with the plate stage 14 during scanning exposure. become.
  • the pattern areas of the masks 20A and 20B are divided into a plurality of parts, and the same pattern is formed in each of the divided areas.
  • a larger number of small-sized pattern regions can be formed on the plate 22.
  • 18 pattern areas can be formed on the plate 22 in a 3 ⁇ 6 matrix arrangement.
  • a part of the four scanning exposures for example, the first two exposures
  • a part of the three divided areas of the masks 20A and 20B for example, only two divided areas, It may be transferred onto the plate 22.
  • 15 pattern regions can be formed on the plate 22 in a 3 ⁇ 5 matrix arrangement.
  • 24 pattern areas are arranged on the plate 22 in a 6-by-4 matrix arrangement. Can be formed.
  • the force described for adjusting the pattern formation position (drawing position) on the mask in accordance with the number of chamfers is not limited to this, and the position of the mask in the Y-axis direction is not limited to this. Good as an adjustment.
  • the mask 20A is driven in the + Y direction indicated by the arrow yl through the mask stage 12A and the mask stage 12B.
  • the distance P1 between the pattern areas PA and PB is about L2 / 3
  • the distance between the far edges of the pattern areas PA and PB may be about L2.
  • the width of the masks 20A and 20B in the non-scanning direction is approximately L2 / 3, which is advantageous in that the mask can be made smaller than in the above-described embodiment.
  • the mask stage 12A is interposed. Then, the mask 20A is driven in the Y direction indicated by the arrow y3 and the mask 20 ⁇ is driven in the + ⁇ direction indicated by the arrow y4 via the mask stage 12 ⁇ so that the distance between the pattern areas PA and PB is P1. May be about L1 / 4, and the distance P2 in the non-scanning direction between the far edges of PA and PB in the pattern area may be about 3 X (L1 / 4).
  • the effective area should be slightly inside (approximately 10 to 20 mm) from the outer edge of the plate. If there is such an effective area, the plate size (L1 X L2) in the above embodiment may be replaced with the effective area dimension.
  • the force S, the mask 20A and the mask 20B described in the case where the same pattern is formed in the pattern region on one surface of the mask 20A and the one surface of the mask 20B. Different patterns may be formed in the pattern region.
  • double exposure may be performed on each shot region of the plate 22 using the mask 20A and the mask 20B in which different patterns are formed in the pattern region, and the projection optical system modules PLM1 and PLM2. .
  • illumination light for example, infrared or visible single wavelength laser light oscillated from a DFB semiconductor laser or fiber laser is used, for example, erbium (or both erbium and ytterbium). ) May be used, and harmonics that are amplified with a fiber amplifier doped with light and then converted into ultraviolet light using a nonlinear optical crystal may be used.
  • a light source that generates vacuum ultraviolet light such as F laser light having a wavelength of 157 nm, Kr excimer laser light having a wavelength of 146 nm, Ar excimer laser light having a wavelength of 126 nm may be used.
  • a solid laser (wavelength: 355 nm, 266 nm) or the like may be used.
  • the projection optical system modules PLM1 and PLM2 have been explained for the case of a multi-lens projection optical system having five projection optical units, and the number of projection optical units is Not limited to one or more.
  • the projection optical system is not limited to a multilens projection optical system, and may be a projection optical system using an Offner type large mirror.
  • the projection optical system modules PLM1 and PLM2 are used as projection magnifications.
  • the projection optical system may be either a reduction system or an enlargement system.
  • an enlargement system is used as the projection optical system, it is possible to use a smaller mask, so that the mask stage can be downsized and the illumination system can be downsized. For this reason, the control performance of the mask stage can be expected to be improved, and the degree of freedom of arrangement of the mask stage and illumination system is improved.
  • the magnification of the projection optical system is taken into consideration so that projection images of patterns adjacent to each other in the non-scanning direction among the patterns formed on the mask do not overlap on the force plate. Therefore, it is necessary to design the layout of the pattern.
  • the projection optical system may be any of a refractive system, a reflective system, and a catadioptric system, and the projected image may be an inverted image.
  • a light-transmitting mask in which a predetermined light-shielding pattern (or phase pattern 'dimming pattern') is formed on a light-transmitting mask substrate can be used instead of this mask.
  • an electronic mask (variable molding mask) that forms a transmission pattern, a reflection pattern, or a light emission pattern based on electronic data of a pattern to be exposed You can use it.
  • a variable molding mask that uses a DMD (Digital Micro-mirror Device), which is a type of non-light emitting image display element (also called a spatial light modulator), prepare two variable molding masks.
  • DMD Digital Micro-mirror Device
  • Two variable molding masks are arranged on substantially the same plane at a predetermined interval in the non-scanning direction (Y-axis direction). Then, during exposure, the distance between the edges close to each other in the non-scanning direction is P1 described above, and the distance between the edges farther from each other in the non-scanning direction satisfies P2 described above.
  • Only the mirror element group within the range to be used may be used for pattern generation. That is, a mirror element outside the range is always turned off, and each mirror element included in the two mirror element groups within the range is turned off according to the pattern data to generate light including pattern information.
  • the substrate (plate 22) may be moved in the scanning direction in synchronization with a change in light including pattern information generated by two variable shaping masks.
  • the pattern corresponding to the light including the pattern information generated by the two variable shaping masks is transferred to the two regions on the plate 22 through the projection optical system by the scanning exposure method.
  • the variable molding mask has the length in the Y-axis direction as described above. If there is more than P2, only one may be provided. In such a case, only two mirror element groups corresponding to two mirror element groups within the above range may be used for pattern generation. Therefore, in the scanning type exposure apparatus using this variable shaping mask, the same control sequence as that of the above-described embodiment is adopted, so that the Y axis of the shot area with respect to the Y axis direction parallel to the column direction of the matrix on the plate 22 is used.
  • variable molding mask and The plate stage 14 (plate stage drive system 26) is controlled. Thereby, an effect equivalent to that of the above embodiment can be obtained.
  • the present invention is applied to a projection exposure apparatus that performs scanning exposure involving step-and-scan operation of a plate (substrate) has been described, but the present invention is not limited thereto.
  • the present invention can also be applied to a proximity type exposure apparatus that does not use a projection optical system.
  • the present invention can also be applied to a step-and-repeat exposure apparatus (so-called stepper) or a step-and-stitch exposure apparatus. Even in such an exposure apparatus, by alternately repeating the step of simultaneously forming at least two pattern regions separated in a predetermined direction on the substrate and the step of moving the substrate in the predetermined direction, An effect equivalent to that of the above embodiment can be obtained.
  • the present invention is applied to, for example, an immersion type exposure apparatus in which a liquid is filled between a projection optical system and a wafer as disclosed in, for example, US Patent Application Publication No. 2005/0259234. Also good.
  • an exposure apparatus that forms line and space patterns on a wafer by forming interference fringes on the wafer.
  • the present invention can also be applied to a system.
  • the use of the exposure apparatus is not limited to an exposure apparatus for liquid crystal that transfers a liquid crystal display element pattern onto a square glass plate.
  • an exposure apparatus for semiconductor manufacturing, a thin film magnetic head, a micromachine It can be widely applied to an exposure apparatus for manufacturing DNA chips and the like.
  • reticles or reticles used in optical exposure equipment, EUV exposure equipment, X-ray exposure equipment, electron beam exposure equipment, etc. which are made only by microdevices such as semiconductor elements.
  • the present invention can also be applied to an exposure apparatus that transfers a circuit pattern onto a glass substrate or a silicon wafer in order to manufacture a mask.
  • the object to be exposed is not limited to a glass plate.
  • a wafer, a ceramic substrate, a film member, or a mask for example, a wafer, a ceramic substrate, a film member, or a mask.
  • the ink jet head group disclosed in the above publication discloses a substrate (for example, PET, glass, silicon, paper, etc.) by discharging a predetermined functional liquid (metal-containing liquid, photosensitive material, etc.) from a nozzle (discharge port). Etc.) are provided. Therefore, two functional liquid applicators such as the ink jet heads are prepared, and these two functional liquid applicators are arranged on substantially the same plane at a predetermined interval in the non-scanning direction (Y-axis direction). Deploy .
  • the substrate may be moved in the scanning direction in synchronization with the on / off of each ink jet head included in one ink jet head group. As a result, two pattern areas are formed on the substrate by the functional liquid applied by the two functional liquid applying apparatuses.
  • the same control sequence as that of the above-described embodiment may be adopted to control the functional liquid application apparatus and the substrate stage that holds the substrate. good.
  • the formation of two shot areas (pattern areas) separated by a natural number k times the dimension in the Y-axis direction of the pattern area with respect to the Y-axis direction parallel to the matrix column direction on the substrate, and the substrate Y Axially By alternately repeating the movement, (m X n) pattern regions can be formed in a matrix arrangement on the substrate. Also in this case, (m X n) pattern regions can be formed in a matrix arrangement on the substrate by a scan operation less than (m X n) times.
  • the substrate may be fixed, and the functional liquid application device may be scanned in the scanning direction, or the substrate, the functional liquid application device, May be scanned in opposite directions.
  • FIG. 13 is a flowchart for explaining a method of manufacturing a semiconductor device as a microdevice.
  • step 102 of FIG. 13 a metal film is deposited on one lot of Ueno (plate).
  • step 104 a photoresist is applied on the metal film on the loto (plate).
  • step 106 the above-described various exposure apparatuses are used to form the pattern image, the one lot of wafers, and each shot area on the (plate). That is, each shot area on the wafer and the (plate) is sequentially exposed with the pattern image.
  • step 108 the photoresist on the lot (the plate) is developed, and in step 110, the resist pattern is used as a mask on the wafer (plate) in the lot.
  • step 110 the resist pattern is used as a mask on the wafer (plate) in the lot.
  • a device such as a semiconductor element is manufactured by forming a circuit pattern of an upper layer.
  • step 106 the plate is exposed with high throughput using the above-described various exposure apparatuses (including the exposure apparatus 10 of the above-described embodiment). As a result, a device such as a semiconductor element is obtained. Productivity can be improved. [0115] Further, instead of the process in step 106 in at least one layer, a pattern may be formed on the substrate using the element manufacturing apparatus described above. In this case, since the pattern is formed on the substrate with high throughput, it is possible to improve the productivity of devices such as semiconductor elements.
  • a liquid crystal display element as a microdevice can be obtained by forming a predetermined pattern (circuit pattern, electrode pattern, etc.) on a plate (glass substrate).
  • FIG. 14 is a flowchart for explaining a method of manufacturing a liquid crystal display element as a micro device by forming a predetermined pattern on a plate using the various exposure apparatuses described above.
  • step 202 in FIG. 14 a so-called photolithographic process, in which a pattern image is formed on a photosensitive substrate (such as a glass substrate coated with a resist) using the various exposure apparatuses described above. Executed.
  • a photosensitive substrate such as a glass substrate coated with a resist
  • processing steps such as a developing step, an etching step, and a resist stripping step, whereby a predetermined pattern is formed on the substrate.
  • step 204 a group of three dots corresponding to R (Red), G (Green), and B (B1 ue) are arranged in a matrix or R, A color filter is formed by arranging a set of three stripe filters G and B in the horizontal scanning line direction. Then, after the color filter forming step (step 204), the cell assembling step of step 206 is executed. In the cell assembly process of step 206, a liquid crystal panel (liquid crystal cell) is assembled using the substrate having the predetermined pattern obtained in the pattern formation process and the color filter obtained in the color filter formation process.
  • a liquid crystal panel liquid crystal cell
  • liquid crystal is injected between a substrate having a predetermined pattern obtained in the pattern formation process and a color filter obtained in the color filter formation process.
  • Manufactures panels liquid crystal cells.
  • each part such as an electric circuit and a backlight for performing display operation of the assembled liquid crystal panel (liquid crystal cell) is attached to complete the liquid crystal display element.
  • a pattern may be formed on the photosensitive substrate using the element manufacturing apparatus described above.
  • the pattern is formed on the photosensitive substrate with a high throughput, and as a result, the productivity of the liquid crystal display element can be improved.
  • the exposure method, pattern formation method, and exposure apparatus of the present invention are suitable for forming a pattern on an object such as a plate.
  • the device manufacturing method of the present invention is suitable for manufacturing display devices and other micro devices.

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Abstract

L'invention concerne un procédé d'exposition, de formation de motif, un dispositif d'exposition et un procédé de fabrication dudit dispositif. Tandis que des systèmes d'éclairage (18A, 18B) allument presque simultanément des masques (20A, 20B) par des lumières d'éclairage, un système de commande commande des étages de masque (12A, 12b) et un étage de substrat (14) de telle sorte que les masques (20A, 20B) sont balayés dans la direction de balayage en synchronisation avec l'étage de substrat (14) sur lequel un substrat (22) est monté. Ainsi, il est possible de transférer des motifs formés sur les masques (20A, 20B) sur différentes régions du substrat (22) par l'intermédiaire de systèmes optiques de projection correspondants (PLM1, PLM2), respectivement, presque simultanément. Cela signifie qu' il est possible de transférer les motifs formés sur une pluralité de masques sur différentes régions du substrat. En conséquence, il est possible d'améliorer le rendement par comparaison avec un cas où une région de motif est formée sur le substrat par une exposition de balayage.
PCT/JP2007/072715 2006-11-27 2007-11-26 Procédé d'exposition, procédé de formation de motif, dispositif d'exposition, et procédé de fabrication du dispositif Ceased WO2008065977A1 (fr)

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