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WO2006003782A1 - Méthode de fabrication de cristal unique de silicium et appareil - Google Patents

Méthode de fabrication de cristal unique de silicium et appareil Download PDF

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Publication number
WO2006003782A1
WO2006003782A1 PCT/JP2005/010771 JP2005010771W WO2006003782A1 WO 2006003782 A1 WO2006003782 A1 WO 2006003782A1 JP 2005010771 W JP2005010771 W JP 2005010771W WO 2006003782 A1 WO2006003782 A1 WO 2006003782A1
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WIPO (PCT)
Prior art keywords
single crystal
silicon single
gas
resistivity
producing
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Ceased
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PCT/JP2005/010771
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English (en)
Japanese (ja)
Inventor
Yoshihiro Kodama
Kazuyuki Hirahara
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Shin Etsu Handotai Co Ltd
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Shin Etsu Handotai Co Ltd
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Priority to JP2006528465A priority Critical patent/JP4529976B2/ja
Publication of WO2006003782A1 publication Critical patent/WO2006003782A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/08—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone
    • C30B13/10—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials
    • C30B13/12—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials in the gaseous or vapour state

Definitions

  • the present invention relates to a method and an apparatus for manufacturing a silicon single crystal by an FZ method, and more particularly to a method and an apparatus for efficiently manufacturing a silicon single crystal having a high resistivity.
  • FZ single crystals silicon single crystals manufactured by the floating zone (FZ) method have been used for power devices such as high voltage power devices and thyristors.
  • High resistivity silicon wafers have been used.
  • semiconductor devices for mobile communication and state-of-the-art C MOS devices have been required to reduce parasitic capacitance. It has been reported that signal transmission loss and parasitic capacitance in a Schottky barrier diode can be effectively reduced by using a high resistivity substrate. Therefore, there is an increasing demand for a high resistivity FZ silicon single crystal wafer having a resistivity of 3000 ⁇ ⁇ cm or more as a substrate used for such device applications.
  • the tip of a polycrystalline silicon raw material rod is melted by high-frequency induction heating using a heater coil or the like in an inert gas atmosphere such as argon.
  • the partial melting zone melting part
  • the doping method of the dopant is phosphine (PH
  • the Siemens method is a method for producing polycrystalline silicon as a raw material in the FZ method.
  • a raw material gas that is also mixed with trichlorosilane and hydrogen is brought into contact with a red-hot polycrystalline silicon core rod, and silicon generated by thermal decomposition of the source gas is deposited on the surface of the core rod,
  • This is a manufacturing method that gradually grows into a thick and polycrystalline silicon rod.
  • an apparatus is used in which a large number of silicon core rods are erected on a sealed bell jar (reactor).
  • An object of the present invention is to provide a method and an apparatus for efficiently and stably producing a silicon single crystal having a desired resistivity, particularly 3000 ⁇ ′cm or more.
  • the present invention provides a method for producing a silicon single crystal by the FZ method, wherein the conductivity type and resistivity of polycrystalline silicon used as a raw material rod are measured in advance, and then based on the measured values. Then, the conductivity type, concentration, and gas flow rate of the dopant gas are determined so that the resistivity of the single crystal to be manufactured has a desired value, and the desired value is obtained by FZ method while gas doping the determined dopant gas.
  • a method for producing a silicon single crystal characterized in that a silicon single crystal having a specific resistivity is produced.
  • the resistivity of the single crystal manufactured based on the measured value is set to a desired value.
  • the desired value can be 3000 ⁇ ⁇ cm or more.
  • the measurement performed in advance is performed by manufacturing a silicon single crystal by the FZ method using polycrystalline silicon of the same lot as the polycrystalline silicon as a raw material rod, and using the silicon single crystal to conduct conductivity and resistance. It is preferable to measure the rate ⁇ .
  • a silicon single crystal is manufactured by the FZ method using polycrystalline silicon of the same lot as the polycrystalline silicon as a raw material rod, and the conductivity type and resistivity of the silicon single crystal are used. If measurement is performed, the target conductivity type and resistivity can be controlled more accurately.
  • the resistivity of the polycrystalline silicon measured in advance is higher than the target resistivity of the silicon single crystal to be manufactured, a dopant having the same conductivity type as that of the polycrystalline silicon is gas-doped accordingly, The resistivity can be reliably lowered by the amount of doping of the metal. If the resistivity is lower than the target resistivity, a dopant of a conductivity type opposite to that of the polycrystalline silicon is gas-doped accordingly, and a very small amount of compensate is obtained.
  • the resistivity can be reliably increased by the amount, and as a result, a silicon single crystal having a target conductivity type and a desired resistivity, particularly 3000 ⁇ 'cm or more, can be easily and efficiently manufactured. Is possible.
  • the dopant is PH or B H, and the gas containing the dopant is melted in FZ.
  • the dopant is PH or B H
  • the gas containing the dopant is FZ.
  • a silicon single crystal is produced while introducing an inert gas such as argon above the melting part and exhausting from below, the melting part is injected when the dopant gas is blown onto the melting part to perform gas doping. Since it is possible to prevent the dopant from adhering to the upper surface of the raw material rod, a silicon single crystal having a uniform resistivity distribution in the axial direction of the crystal rod even at a desired value, particularly a high resistivity of 3000 ⁇ 'cm or more. Can be manufactured stably.
  • the present invention is a method for producing a silicon single crystal by the FZ method, wherein an inert gas is introduced into the FZ melt part upwardly, and a gas containing a dopant is melted while exhausting downwards.
  • a method for producing a silicon single crystal characterized in that a silicon single crystal is produced by performing gas dope by spraying from a nozzle close to the part.
  • the gas is doped by blowing the gas containing the dopant from the nozzle adjacent to the melting portion while introducing the inert gas to the FZ melting portion and exhausting the lower force, the dopant is obtained.
  • gas doping by blowing a gas to the molten part, it is possible to prevent the dopant from adhering to the surface of the raw material bar above the molten part. Crystals can be manufactured stably and efficiently.
  • the present invention provides an apparatus for producing a silicon single crystal by an FZ method, wherein at least the FZ method A nozzle for performing gas dope by blowing a gas containing a dopant to the melted part in the vicinity of the melted part, and a supply for introducing an inert gas from above the melted part and exhausting from below.
  • a silicon single crystal manufacturing apparatus characterized by comprising an exhaust mechanism.
  • a nozzle for performing gas doping by blowing a gas containing a dopant to the melted portion, and an inert gas is introduced from above the melted portion
  • An FZ single crystal manufacturing apparatus equipped with a supply / exhaust mechanism for exhausting from below can prevent the dopant from adhering to the surface of the raw material rod above the melted part when the dopant gas is blown onto the melted part to perform gas doping. Therefore, a silicon single crystal having a uniform resistivity distribution in the axial direction of the crystal rod can be manufactured stably and efficiently regardless of the resistivity.
  • the dopant gas is adjusted so that the resistivity of the single crystal manufactured based on the measured value becomes a desired value.
  • the conductivity type, concentration and gas flow rate of the gas, and gas doping the determined dopant gas it becomes possible to produce a desired high resistivity silicon single crystal efficiently and stably. If the inert gas is introduced into the upper part of the FZ melting part and the gas containing the dopant is blown out from the nozzle adjacent to the melting part while exhausting the lower part, the resistivity is obtained. Regardless of this, it is possible to stably and efficiently manufacture a silicon single crystal having a uniform resistivity distribution in the axial direction of the crystal rod.
  • FIG. 1 is a schematic view showing an example of an FZ single crystal manufacturing apparatus used for manufacturing a silicon single crystal according to the present invention.
  • FIG. 2 is a graph showing resistivity distributions in Examples 1 and 2 in the crystal axis direction.
  • FIG. 3 is a graph showing resistivity distributions in Examples 3 and 4 in the crystal axis direction.
  • FIG. 4 is a graph showing resistivity distributions in Examples 5 and 6 in the crystal axis direction.
  • FIG. 5 is a graph showing resistivity distribution in the crystal axis direction of Comparative Example 1.
  • FIG. 6 An example of a resistivity histogram when an undoped FZ single crystal with a diameter of 150 mm is manufactured using N-type polycrystalline silicon from different lots as a raw material rod.
  • the raw material bar force of polycrystalline silicon is also non-doped and the silicon single crystal is produced by the FZ method.
  • the conductivity type and resistivity of the silicon single crystal thus produced were measured and evaluated, and a silicon single crystal that matched the intended conductivity type and resistivity was selected from the evaluation results and used.
  • polycrystalline silicon is doped with impurities (dopants) from trichlorosilane, hydrogen, and bell jar during production to determine its conductivity type and resistivity.
  • impurities dopants
  • the type and contamination of this dopant are unstable.
  • the conductivity type and resistivity of the FZ single crystal rod were measured.
  • Figure 6 shows an example of a resistivity histogram when 301 non-doped N-type FZ single crystals with a diameter of 150 mm were produced using polycrystalline silicon from different lots as a raw material rod. In this way, FZ single crystals produced in different lots of polycrystalline silicon have extremely large variations in resistivity.
  • the average resistivity of silicon wafer (the resistivity of silicon single crystal) must be 6500 to 7700 ⁇ ' cm, considering the in-plane resistivity distribution Only 13% of all silicon single crystals are powerful and fit.
  • the present inventors have developed a raw material for solving the above problems.
  • the dopant gas is controlled so that the resistivity of the single crystal produced based on the measured value becomes a desired value, particularly 3000 ⁇ 'cm or more.
  • FIG. 1 is a schematic diagram showing an example of an FZ single crystal manufacturing apparatus used for manufacturing a silicon single crystal according to the present invention.
  • the FZ single crystal manufacturing apparatus 1 introduces at least a dope gas nozzle 22 for performing gas doping and an inert gas such as argon (Ar) gas into the chamber 26 from the upper side.
  • a gas supply mechanism 28a and an exhaust mechanism 28b for exhaust are provided. In FIG. 1, the supply mechanism 28a may supply the dope gas to the nozzle 22 separately.
  • a gas rectifying cylinder 24 is preferably provided.
  • a silicon single crystal is manufactured by the FZ method.
  • the single crystal manufactured based on the measured value is used.
  • the conductivity type, concentration, and gas flow rate of the dopant gas are determined so that the resistivity of the crystal becomes a desired value, and a silicon single crystal is manufactured by the FZ method while gas doping the determined dopant gas.
  • a silicon single crystal is preferably manufactured by FZ method using polycrystalline silicon of the same lot as a raw material rod, and the conductivity type and resistivity are measured using the silicon single crystal.
  • the type of gas-doped dopant is determined so that the target conductivity type and resistivity are obtained from the resistivity measurement results, and the dopant concentration and The gas flow rate can be calculated and determined. As a result, it is possible to eliminate the variation in resistivity caused by the influence of the dopant that was originally included in the polycrystalline silicon raw material rod indefinitely.
  • the portion of the polycrystalline silicon rod where melting starts is processed into a cone shape, and the surface is etched to remove the processing distortion.
  • the silicon raw material rod 2 is set on the upper holding jig 6 of the upper shaft 4 installed in the chamber 26 with screws or the like, and the seed crystal 12 is attached to the lower holding jig 10 of the lower shaft 8.
  • the lower end of the cone portion of the silicon raw material rod 2 is preheated with a carbon ring (not shown).
  • the gas supply mechanism 28a supplies an inert gas, for example, an Ar gas containing nitrogen gas, and the exhaust gas is exhausted by the exhaust mechanism 28b at the lower part of the chamber 26, for example, the furnace pressure is set to 0.05 MPa,
  • the Ar gas flow rate is 20-30 lZmin, and the nitrogen concentration in the chamber is 0.1-0.5%.
  • the silicon raw material rod 2 is heated and melted by an induction heating coil (high-frequency coil) 14, and the tip of the cone portion is fused to the seed crystal 12.
  • the silicon raw material rod 2 Rotate the upper and lower shafts 4 and 8 and lower the silicon raw material rod 2 at a speed of 2.3 mmZmin, for example, to move the melt zone (melt) 18 from the lower end to the upper end of the silicon raw material rod. Then, the silicon single crystal 3 having a desired resistivity, particularly 3000 ⁇ ′cm or more, is grown below the melting zone 18. The growth is performed while doping the dopant gas determined as described above.
  • the gas dope is performed by blowing a dope gas of the conductivity type, concentration and gas flow determined as described above from the dope gas nozzle 22 close to the melt zone 18 of FZ to the melt zone 18 according to a known method.
  • Can do The dopant gas is not limited, but if diborane (B H) or phosphine (PH) is used, excellent resistivity control can be achieved and the resistivity is poor.
  • dopant gases can be diluted with Ar gas to obtain a predetermined concentration of dopant gas.
  • the dopant of the same conductivity type as that of the silicon raw material rod 2 is gas-doped, and the target resistivity is obtained. In the case of low, it is preferable to dope a dopant having a conductivity type opposite to that of the silicon raw material rod 2.
  • an FZ single crystal having a resistivity of 3000 ⁇ 'cm or more can be manufactured by gas doping with the same conductivity type dopant, and the resistance of the silicon raw material rod 2
  • the rate is 1000 ⁇ 'cm or more and less than 3000 ⁇ 'cm
  • an FZ single crystal having a resistivity of 3000 ⁇ 'cm or more can be manufactured by gas doping with a dopant of opposite conductivity type.
  • the conductivity type of the silicon single crystal can be made the same as the conductivity type of the polycrystalline silicon rod or vice versa.
  • the doping gas becomes the source gas above the melting zone. Since it does not adhere to the surface of the rod, the resistivity distribution in the axial direction can be made uniform.
  • the gas rectifying cylinder 24 is installed above the melting zone, the gas flow from the upper side to the lower side is rectified, so that it is possible to more reliably prevent the dopant from adhering to the surface of the raw material rod. It is possible to make the resistivity distribution in the axial direction more uniform.
  • the axis 4 serving as the rotation center when growing the silicon raw material rod 2 is shifted from the axis 8 serving as the rotation center of the single crystal of the single crystal during single crystallization. It is preferable to grow single crystals (by eccentricity). By shifting both the centers in this manner, the melted state is agitated during single crystallization, and the quality of the produced single crystal can be made uniform. What is necessary is just to set eccentricity according to the diameter of a single crystal, for example.
  • the silicon single crystal 3 is doped with nitrogen, and crystal defects such as FPD and swirl defects are formed during the growth of the silicon single crystal 3. This is preferable because a higher quality silicon single crystal can be grown.
  • nitrogen-containing compound gas such as ammonia, hydrazine, nitrogen trifluoride may be used instead of nitrogen gas.
  • the concentration of nitrogen doped in the silicon single crystal is, for example, about 3 ⁇ 10 14 at omsZ cm.
  • a single crystal was selected from a lot of polycrystalline silicon rods with a diameter of 130 mm, and a silicon single crystal was manufactured using this as a raw material rod by the non-doping FZ method.
  • the conductivity type was N-type.
  • the resistivity was 24200 ⁇ 'cm.
  • the polycrystalline silicon rod of the same lot as the polycrystalline silicon rod was used as a raw material rod, and the diameter of the gas rod was adjusted by PH doping (Ar diluted PH gas) of the same conductivity type as the raw material rod diluted with Ar gas. 154mm, straight
  • Ar gas containing nitrogen gas is supplied from the upper part of the chamber above the melting zone for 201Z min, exhausted from the lower part of the chamber, the furnace pressure is 0.05 MPa, and the nitrogen concentration is 0.30. %.
  • a silicon single crystal was grown by the FZ method at a growth rate of 2.3 mmZmin while this mixed gas was blown into the melt zone at 500 ccZmin from a nozzle and gas-doped by blowing this mixed gas.
  • wafers are taken from the parts of the straight body lengths of Ocm, 12cm, and 26cm, heat treated in dry oxygen at 1200 ° C for 100 minutes, and then arbitrary orthogonal two directions.
  • the resistivity p of all points at 2.5 mm pitch was measured by the four-probe measurement method, and the axial resistivity distribution was evaluated.
  • the resistivity p of each part is the average value of all the woofer points in each part, the maximum value of p in the above part is p max, and the minimum value is p min.
  • the distribution is expressed by the following equation.
  • Axial resistivity distribution (max- p min) / p min X 100%
  • the lifetime was measured at a position of 26 cm in the straight body.
  • the obtained single crystal is N-type conductivity and the resistivity is 6890-7440 ⁇ 'cm.
  • the axial resistivity distribution was 8.0% (see Figure 2).
  • the lifetime was 1000 sec.
  • a silicon single crystal was produced under the same production conditions as in Example 1 except that a gas flow straightening tube was installed, and the same crystal quality characteristics as in Example 1 were evaluated.
  • the obtained single crystal had N-type conductivity, a resistivity of 6650-6800 ⁇ 'cm, and an axial resistivity distribution of 2.3% (see Fig. 2).
  • the lifetime was 1000 sec.
  • Example 3 A single silicon crystal was selected from a lot of polycrystalline silicon rods with a diameter of 105 mm, using this as a raw material rod by the non-dope FZ method, and when its conductivity type and resistivity were measured, the conductivity type was N-type. The resistivity was 1150 ⁇ 'cm. Based on this measurement result, a polycrystalline silicon rod of the same lot as the polycrystalline silicon rod was used as a raw material rod, and a raw material rod having a diameter of 105 mm and a straight body length of 105 cm was obtained by gas doping of Ar-diluted BH gas of the opposite conductivity type to the raw material rod. Same as
  • a silicon single crystal with N-type conductivity and a target resistivity of 7500 ⁇ 'cm was manufactured by the FZ method.
  • Ar gas containing nitrogen gas is supplied from the upper part of the chamber above the melting zone for 201Z min, exhausted from the lower part of the chamber, the furnace pressure is 0.05 MPa, and the nitrogen concentration is 0.10. %.
  • a silicon single crystal was grown by the FZ method at a growth rate of 2.4 mmZmin while this gas was doped by spraying this mixed gas at a flow rate of 500 ccZmin from the nozzle to the molten zone.
  • woofers were collected from the straight body lengths of Ocm, 30cm, 60cm, and 105cm, and the resistivity and axial resistivity distribution were measured by the same measurement method as in Example 1. Was evaluated. The lifetime was also measured at a position of 105cm in the straight body.
  • the obtained single crystal was N-type conductivity
  • the resistivity was 7125-8150 ⁇ 'cm
  • the axial resistivity distribution was 14.4% (see Fig. 3).
  • the lifetime was 800 sec.
  • a silicon single crystal was produced under the same production conditions as in Example 3 except that a gas flow straightening tube was installed, and the same crystal quality characteristics as in Example 3 were evaluated.
  • the obtained single crystal had an N-type conductivity, a resistivity of 7420-8114 ⁇ 'cm, and an axial resistivity distribution of 9.4% (see Fig. 3). Lifetime is 900 sec.
  • Example 5 A single silicon crystal was selected from a lot of polycrystalline silicon rods with a diameter of 105 mm, using this as a raw material rod by the non-dope FZ method, and its conductivity type and resistivity were measured. The resistivity was 2300 ⁇ 'cm. Based on this measurement result, a polycrystalline silicon rod of the same lot as the polycrystalline silicon rod was used as a raw material rod, and a raw material rod having a diameter of 105 mm and a straight cylinder length of 105 cm was obtained by gas doping with Ar-diluted PH gas of the opposite conductivity type to that of the raw material rod. Opposite
  • a silicon single crystal with N-type conductivity and a target resistivity of 7000 ⁇ 'cm was manufactured by the FZ method.
  • Ar gas containing nitrogen gas is supplied from the upper part of the chamber above the melting zone for 201Z min, exhausted from the lower part of the chamber, the furnace pressure is 0.05 MPa, and the nitrogen concentration is 0.10. %.
  • a silicon single crystal was grown by the FZ method at a growth rate of 2.4 mmZmin while this gas was doped by spraying this mixed gas at a flow rate of 500 ccZmin from the nozzle to the molten zone.
  • woofers were collected from the parts with straight body lengths of Ocm, 30cm, 60cm, and 105cm, and the resistivity and axial resistivity distribution were measured by the same measurement method as in Example 1. Was evaluated. The lifetime was also measured at a position of 105cm in the straight body.
  • the obtained single crystal had an N-type conductivity, a resistivity of 6620-6930 ⁇ 'cm, and an axial resistivity distribution of 4.7% (see Fig. 4).
  • the lifetime was 1000 sec.
  • a silicon single crystal was produced under the same production conditions as in Example 5 except that a gas flow straightening tube was installed, and the same crystal quality characteristics as in Example 5 were evaluated.
  • the obtained single crystal had N-type conductivity, a resistivity of 6920-7140 ⁇ 'cm, and an axial resistivity distribution of 3.2% (see Fig. 4). Lifetime is 900 sec.
  • Ar gas containing nitrogen gas is supplied from the upper part of the chamber above the melting part for 301Z min, exhausted from the lower part of the chamber, the furnace pressure is 0.05 MPa, and the nitrogen concentration is 0.30. %.
  • a silicon single crystal was grown by the FZ method at a growth rate of 2.3 mmZmin.
  • wafers were taken from the parts with straight body lengths of Ocm, 10cm, 20cm, and 30cm, and in the same manner as in Example 1, the resistivity, the axial resistivity distribution, and the line were obtained. Ftime was measured.
  • the resistivity of the N-type conductivity was 943 to 10206 ⁇ 'cm, which was far from the target resistivity.
  • the axial resistivity distribution was 5.9% (see Fig. 5).
  • the lifetime was 900 ⁇ sec.
  • the resistivity was greatly deviated from the target resistivity, but the axial resistivity distribution was small because Ar gas was supplied from the upper side and exhausted from the lower side. .
  • the gas flow rate of the dopant gas can be determined to be zero, and the silicon single crystal can be manufactured by the FZ method. .

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
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  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

Cette méthode de fabrication de cristal unique de silicium à l'aide de la méthode FZ est caractérisée par le fait le type de conductivité et la résistivité du silicium polycristallin à utiliser comme tige du matériau sont préalablement mesurés, le type de conductivité, la concentration et le débit du gaz dopant sont déterminés de sorte que la résistivité d'un seul cristal fabriqué par référence aux valeurs mesurées puisse être d'une valeur souhaitée et que le gaz dopant ainsi déterminé est utilisé pour doper le gaz du cristal unique. La méthode de fabrication du gaz unique de silicium à l'aide de la méthode FZ est caractérisée par le fait qu'un gaz inerte est introduit par le haut de l'unité de fusion FZ qui précède et rejeté par en dessous, le dopage au gaz es réalisé tout en projetant le gaz contenant un dopant vers l'unité de fusion au moyen d'une buse près de l'unité de fusion ; on fabrique ainsi un cristal unique de silicium. Est également présenté un appareil de fabrication de cristal unique. Dès lors, il s'agit de méthodes et d'un appareil pour fabriquer efficacement et de manière sûre un cristal unique de silicium, même si le cristal unique de silicium présente une résistivité d'une valeur souhaitée, en particulier 3000 Ω·cm ou plus.
PCT/JP2005/010771 2004-06-30 2005-06-13 Méthode de fabrication de cristal unique de silicium et appareil Ceased WO2006003782A1 (fr)

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CN1333114C (zh) * 2006-04-21 2007-08-22 天津市环欧半导体材料技术有限公司 气相掺杂区熔硅单晶的生产方法
JP2007314374A (ja) * 2006-05-26 2007-12-06 Shin Etsu Handotai Co Ltd Ｃｚ法により製造したシリコン結晶棒を原料としたｆｚ単結晶シリコンの製造方法
WO2008038689A1 (fr) * 2006-09-29 2008-04-03 Sumco Techxiv Corporation procÉdÉ de fabrication d'un cristal de silicium unique, cristal de silicium unique, galette de silicium, mÉcanisme rÉgulateur de la fabrication d'un cristal de silicium unique et programme
JP2010215431A (ja) * 2009-03-13 2010-09-30 Shin Etsu Handotai Co Ltd 半導体単結晶の製造方法
CN101979719A (zh) * 2010-11-03 2011-02-23 天津市环欧半导体材料技术有限公司 一种气相重掺磷区熔硅单晶的生产方法
JP2011088758A (ja) * 2009-10-20 2011-05-06 Shin Etsu Handotai Co Ltd Ｎ型シリコン単結晶の製造方法及びリンドープｎ型シリコン単結晶
WO2012114375A1 (fr) * 2011-02-23 2012-08-30 信越半導体株式会社 Procédé pour la fabrication de monocristal de silicium de type n et monocristal de silicium de type n dopé par du phosphore
JP2013103874A (ja) * 2011-11-11 2013-05-30 Yutaka Kamaike シリコンおよび製造方法
CN107502950A (zh) * 2017-09-04 2017-12-22 青海鑫诺光电科技有限公司 单晶硅的加工设备及其使用方法
CN109554756A (zh) * 2018-12-27 2019-04-02 西安奕斯伟硅片技术有限公司 一种单晶提拉装置、单晶硅的制备方法及单晶硅
JP2019108248A (ja) * 2017-12-19 2019-07-04 株式会社Sumco シリコン単結晶の製造方法
JP2019202913A (ja) * 2018-05-23 2019-11-28 信越半導体株式会社 原料結晶の抵抗率の測定方法及びｆｚシリコン単結晶の製造方法
JP2020007163A (ja) * 2018-07-02 2020-01-16 信越半導体株式会社 原料結晶の抵抗率の測定方法及びｆｚシリコン単結晶の製造方法
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JP2022084731A (ja) * 2018-05-23 2022-06-07 信越半導体株式会社 Ｃｚ法により製造された原料結晶の抵抗率の測定方法及びｆｚシリコン単結晶の製造方法
US11585010B2 (en) 2019-06-28 2023-02-21 Globalwafers Co., Ltd. Methods for producing a single crystal silicon ingot using boric acid as a dopant and ingot puller apparatus that use a solid-phase dopant
US11795569B2 (en) 2020-12-31 2023-10-24 Globalwafers Co., Ltd. Systems for producing a single crystal silicon ingot using a vaporized dopant
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