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WO2005023876A3 - Integrierte schaltung und verfahren zur herstellung einer integrierten schaltung - Google Patents

Integrierte schaltung und verfahren zur herstellung einer integrierten schaltung Download PDF

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Publication number
WO2005023876A3
WO2005023876A3 PCT/DE2004/001904 DE2004001904W WO2005023876A3 WO 2005023876 A3 WO2005023876 A3 WO 2005023876A3 DE 2004001904 W DE2004001904 W DE 2004001904W WO 2005023876 A3 WO2005023876 A3 WO 2005023876A3
Authority
WO
WIPO (PCT)
Prior art keywords
integrated circuit
parts
production
relates
oeft
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/DE2004/001904
Other languages
English (en)
French (fr)
Other versions
WO2005023876A2 (de
Inventor
Marcus Halik
Andreas Walter
Hagen Klauk
Guenter Schmid
Ute Zschieschang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies AG
Original Assignee
Infineon Technologies AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies AG filed Critical Infineon Technologies AG
Priority to JP2006524221A priority Critical patent/JP2007504642A/ja
Priority to EP04786186A priority patent/EP1658624A2/de
Publication of WO2005023876A2 publication Critical patent/WO2005023876A2/de
Publication of WO2005023876A3 publication Critical patent/WO2005023876A3/de
Priority to US11/364,847 priority patent/US20060202198A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/471—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only organic materials
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L61/00—Compositions of condensation polymers of aldehydes or ketones; Compositions of derivatives of such polymers
    • C08L61/04—Condensation polymers of aldehydes or ketones with phenols only
    • C08L61/06—Condensation polymers of aldehydes or ketones with phenols only of aldehydes with phenols
    • C08L61/14—Modified phenol-aldehyde condensates
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F8/00—Chemical modification by after-treatment
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D129/00—Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an alcohol, ether, aldehydo, ketonic, acetal, or ketal radical; Coating compositions based on hydrolysed polymers of esters of unsaturated alcohols with saturated carboxylic acids; Coating compositions based on derivatives of such polymers
    • C09D129/02—Homopolymers or copolymers of unsaturated alcohols
    • C09D129/04—Polyvinyl alcohol; Partially hydrolysed homopolymers or copolymers of esters of unsaturated alcohols with saturated carboxylic acids
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F2810/00—Chemical modification of a polymer
    • C08F2810/20—Chemical modification of a polymer leading to a crosslinking, either explicitly or inherently
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G2261/10—Definition of the polymer structure
    • C08G2261/14—Side-groups
    • C08G2261/142—Side-chains containing oxygen
    • C08G2261/1422—Side-chains containing oxygen containing OH groups
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G2261/30—Monomer units or repeat units incorporating structural elements in the main chain
    • C08G2261/33—Monomer units or repeat units incorporating structural elements in the main chain incorporating non-aromatic structural elements in the main chain
    • C08G2261/334—Monomer units or repeat units incorporating structural elements in the main chain incorporating non-aromatic structural elements in the main chain containing heteroatoms
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G2261/40—Polymerisation processes
    • C08G2261/42—Non-organometallic coupling reactions, e.g. Gilch-type or Wessling-Zimmermann type
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G61/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G61/02—Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/04—Oxygen-containing compounds
    • C08K5/05—Alcohols; Metal alcoholates
    • C08K5/053—Polyhydroxylic alcohols
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/36—Sulfur-, selenium-, or tellurium-containing compounds
    • C08K5/41—Compounds containing sulfur bound to oxygen
    • C08K5/42—Sulfonic acids; Derivatives thereof

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • General Chemical & Material Sciences (AREA)
  • Thin Film Transistor (AREA)
  • Formation Of Insulating Films (AREA)
  • Compositions Of Macromolecular Compounds (AREA)

Abstract

Die Erfindung betrifft eine integrierte Schaltung mit einem organischen Halbleiter, insbesondere einem organischen Feldeffekt-Transistor (OEFT) mit einer Dielektrikumsschicht, herstellbar durch eine Polymerformulierung bestehend aus a) 100 Teilen mindestens eines vernetzbaren Basispolymers, b) 10 bis 20 Teilen mindestens einer elektrophilen Vernetzerkomponente, c) 1 bis 10 Teilen mindestens eines thermischen Säurekatalysators, der bei Temperaturen zwischen 100 - 150°C ein aktivierendes Proton generiert, gelöst in d) mindestens einem Lösungsmittel. Die Erfindung betrifft auch ein Verfahren zur Herstellung einer integrierten Schaltung. Damit ist eine Herstellung von integrierten Schaltungen mit dielektrischen Schichten, insbesondere für OFETs bei niedrigen Temperaturen möglich.
PCT/DE2004/001904 2003-08-29 2004-08-24 Integrierte schaltung und verfahren zur herstellung einer integrierten schaltung Ceased WO2005023876A2 (de)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2006524221A JP2007504642A (ja) 2003-08-29 2004-08-24 集積回路および集積回路の製造方法
EP04786186A EP1658624A2 (de) 2003-08-29 2004-08-24 Integrierte schaltung und verfahren zur herstellung einer integrierten schaltung
US11/364,847 US20060202198A1 (en) 2003-08-29 2006-02-28 Integrated circuit, and method for the production of an integrated circuit

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10340609.3 2003-08-29
DE10340609A DE10340609A1 (de) 2003-08-29 2003-08-29 Polymerformulierung und Verfahren zur Herstellung einer Dielektrikumsschicht

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US11/364,847 Continuation US20060202198A1 (en) 2003-08-29 2006-02-28 Integrated circuit, and method for the production of an integrated circuit

Publications (2)

Publication Number Publication Date
WO2005023876A2 WO2005023876A2 (de) 2005-03-17
WO2005023876A3 true WO2005023876A3 (de) 2005-08-18

Family

ID=34258372

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2004/001904 Ceased WO2005023876A2 (de) 2003-08-29 2004-08-24 Integrierte schaltung und verfahren zur herstellung einer integrierten schaltung

Country Status (7)

Country Link
US (1) US20060202198A1 (de)
EP (1) EP1658624A2 (de)
JP (1) JP2007504642A (de)
KR (1) KR100718358B1 (de)
CN (1) CN1875432A (de)
DE (1) DE10340609A1 (de)
WO (1) WO2005023876A2 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100606655B1 (ko) * 2004-09-22 2006-08-01 한국전자통신연구원 광반응성 유기고분자 게이트 절연막 조성물 및 이를이용한 유기박막 트랜지스터
US20060113569A1 (en) * 2004-11-03 2006-06-01 Akinwande Akintunde I Control of threshold voltage in organic field effect transistors
US20060231829A1 (en) * 2005-04-13 2006-10-19 Xerox Corporation TFT gate dielectric with crosslinked polymer
KR100794720B1 (ko) * 2006-08-28 2008-01-21 경희대학교 산학협력단 유기 박막 트랜지스터 표시판 및 그 제조 방법
TWI375119B (en) * 2008-10-02 2012-10-21 Ind Tech Res Inst Composition for forming photosensitive dielectric material and application thereof
US8623447B2 (en) 2010-12-01 2014-01-07 Xerox Corporation Method for coating dielectric composition for fabricating thin-film transistors
KR102409794B1 (ko) * 2014-09-25 2022-06-17 주식회사 클랩 광-가교성 유전체로서의 에테르계 중합체
DE102021125407A1 (de) 2021-09-30 2023-03-30 Polymer Competence Center Leoben Gmbh Verfahren zur Herstellung eines Dielektrikums für einen Kondensator und Verfahren zur Herstellung eines Kondensators und Kondensator

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002065557A1 (de) * 2001-02-09 2002-08-22 Siemens Aktiengesellschaft Organischer feldeffekt-transistor mit fotostrukturiertem gate-dielektrikum, ein verfahren zu dessen erzeugung und die verwendung in der organischen elektronik
DE10131669A1 (de) * 2001-06-29 2003-01-16 Infineon Technologies Ag Herstellung von organischen Halbleitern mit hoher Ladungsträgermobilität durch pi-konjugierte Vernetzungsgruppen

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DE3826363A1 (de) * 1988-08-03 1990-02-08 Merck Patent Gmbh Saeurehaertbare bindemittelsysteme mit 1,2-disulfonen
US5717003A (en) * 1988-08-03 1998-02-10 Ciba Specialty Chemicals Corporation Acid-curable binder systems containing 1,2-disulfones
JP3873372B2 (ja) * 1997-05-26 2007-01-24 住友化学株式会社 ポジ型フォトレジスト組成物
CA2306384A1 (en) * 1997-10-14 1999-04-22 Patterning Technologies Limited Method of forming an electronic device
US6143204A (en) * 1998-06-19 2000-11-07 Lonza Inc. Stabilization of iodopropynl compounds
DE10043204A1 (de) * 2000-09-01 2002-04-04 Siemens Ag Organischer Feld-Effekt-Transistor, Verfahren zur Strukturierung eines OFETs und integrierte Schaltung
DE10061297C2 (de) * 2000-12-08 2003-05-28 Siemens Ag Verfahren zur Sturkturierung eines OFETs
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DE10143630A1 (de) * 2001-09-06 2003-03-27 Bayer Ag Strahlenhärtende Beschichtungsmittel
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DE10340608A1 (de) * 2003-08-29 2005-03-24 Infineon Technologies Ag Polymerformulierung und Verfahren zur Herstellung einer Dielektrikumsschicht
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DE10131669A1 (de) * 2001-06-29 2003-01-16 Infineon Technologies Ag Herstellung von organischen Halbleitern mit hoher Ladungsträgermobilität durch pi-konjugierte Vernetzungsgruppen

Also Published As

Publication number Publication date
WO2005023876A2 (de) 2005-03-17
CN1875432A (zh) 2006-12-06
EP1658624A2 (de) 2006-05-24
KR20060069479A (ko) 2006-06-21
KR100718358B1 (ko) 2007-05-14
US20060202198A1 (en) 2006-09-14
DE10340609A1 (de) 2005-04-07
JP2007504642A (ja) 2007-03-01

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