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WO2009031434A1 - 有機半導体化合物の単結晶薄膜及びその製造方法 - Google Patents

有機半導体化合物の単結晶薄膜及びその製造方法 Download PDF

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Publication number
WO2009031434A1
WO2009031434A1 PCT/JP2008/065165 JP2008065165W WO2009031434A1 WO 2009031434 A1 WO2009031434 A1 WO 2009031434A1 JP 2008065165 W JP2008065165 W JP 2008065165W WO 2009031434 A1 WO2009031434 A1 WO 2009031434A1
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WO
WIPO (PCT)
Prior art keywords
organic semiconductor
semiconductor compound
producing
single crystal
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/065165
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English (en)
French (fr)
Inventor
Takashi Kato
Tatsuya Igarashi
Toshihiro Shimada
Yui Ishii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Corp
University of Tokyo NUC
Original Assignee
Fujifilm Corp
University of Tokyo NUC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Corp, University of Tokyo NUC filed Critical Fujifilm Corp
Priority to EP08829060.6A priority Critical patent/EP2190007B1/en
Priority to US12/676,117 priority patent/US8309393B2/en
Priority to KR1020107006572A priority patent/KR101483813B1/ko
Priority to CN2008801052684A priority patent/CN101796621B/zh
Publication of WO2009031434A1 publication Critical patent/WO2009031434A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/54—Organic compounds
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C30B7/02—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by evaporation of the solvent
    • C30B7/06—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by evaporation of the solvent using non-aqueous solvents
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/464—Lateral top-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/15—Deposition of organic active material using liquid deposition, e.g. spin coating characterised by the solvent used
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/191—Deposition of organic active material characterised by provisions for the orientation or alignment of the layer to be deposited
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H10K85/622—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene containing four rings, e.g. pyrene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H10K85/623—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene containing five rings, e.g. pentacene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

　本発明は、誘電率が４．５以上でありかつ有機半導体化合物が可溶である有機溶媒を、基板（２）上に塗布して液膜（９）を形成する工程、前記液膜（９）に前記有機半導体化合物を供給し溶解させる工程、および前記有機溶媒中で前記有機半導体化合物を結晶化させる工程を含む、有機半導体化合物の単結晶薄膜の作製方法に関するものである。
PCT/JP2008/065165 2007-09-03 2008-08-26 有機半導体化合物の単結晶薄膜及びその製造方法 Ceased WO2009031434A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
EP08829060.6A EP2190007B1 (en) 2007-09-03 2008-08-26 Single crystal thin film of organic semiconductor compound and method for producing the same
US12/676,117 US8309393B2 (en) 2007-09-03 2008-08-26 Method of producing a single-crystal thin film of an organic semiconductor compound
KR1020107006572A KR101483813B1 (ko) 2007-09-03 2008-08-26 유기 반도체 화합물의 단결정 박막 및 그 제조 방법
CN2008801052684A CN101796621B (zh) 2007-09-03 2008-08-26 制备有机半导体化合物的单晶薄膜的方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007228390 2007-09-03
JP2007-228390 2007-09-03

Publications (1)

Publication Number Publication Date
WO2009031434A1 true WO2009031434A1 (ja) 2009-03-12

Family

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PCT/JP2008/065165 Ceased WO2009031434A1 (ja) 2007-09-03 2008-08-26 有機半導体化合物の単結晶薄膜及びその製造方法

Country Status (6)

Country Link
US (1) US8309393B2 (ja)
EP (1) EP2190007B1 (ja)
JP (1) JP5212711B2 (ja)
KR (1) KR101483813B1 (ja)
CN (1) CN101796621B (ja)
WO (1) WO2009031434A1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130037843A1 (en) * 2010-02-12 2013-02-14 Takeshi Yamao Light emitting transistor
CN106854775A (zh) * 2016-11-11 2017-06-16 苏州大学 利用水‑空气‑有机溶剂三相界面制备有机半导体小分子单晶薄膜的方法

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* Cited by examiner, † Cited by third party
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JP5786230B2 (ja) * 2009-11-05 2015-09-30 国立大学法人京都工芸繊維大学 有機積層体を含む発光トランジスタ
US9059407B2 (en) 2010-08-18 2015-06-16 National Institute Of Advanced Industrial Science And Technology Method for manufacturing organic semiconductor thin film and monocryastalline organic semiconductor thin film
JP2013161066A (ja) * 2012-02-09 2013-08-19 Canon Inc トナー用離型剤およびこれらの離型剤を用いたトナー
CN103436949B (zh) * 2013-09-04 2016-08-17 清华大学 一种有机半导体化合物的单晶薄膜及其制备方法与应用
JP6873034B2 (ja) * 2014-08-18 2021-05-19 クラップ カンパニー リミテッドＣｌａｐ Ｃｏ．， Ｌｔｄ． 結晶性有機半導体材料の製造方法
CN108291103B (zh) * 2015-11-12 2021-12-07 广州华睿光电材料有限公司 印刷组合物、包含其的电子器件及功能材料薄膜的制备方法
CN105951167B (zh) * 2016-05-05 2018-12-11 国家纳米科学中心 一种超薄带状微米尺度有机小分子单晶及其制备方法和应用
CN107177239B (zh) 2017-02-17 2019-03-08 纳晶科技股份有限公司 墨水配方、光电器件以及光电器件的功能层的制备方法
KR102167514B1 (ko) * 2018-10-25 2020-10-19 한양대학교 산학협력단 유기 단결정 및 그 제조 방법
US20220045274A1 (en) * 2020-08-06 2022-02-10 Facebook Technologies Llc Ofets having organic semiconductor layer with high carrier mobility and in situ isolation
CN113981541B (zh) * 2021-12-27 2022-04-12 天津大学 一种生长有机半导体单晶的方法及装置

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JP2005281011A (ja) 2004-03-26 2005-10-13 Kanagawa Acad Of Sci & Technol 結晶性薄膜の作製方法及び装置
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130037843A1 (en) * 2010-02-12 2013-02-14 Takeshi Yamao Light emitting transistor
CN106854775A (zh) * 2016-11-11 2017-06-16 苏州大学 利用水‑空气‑有机溶剂三相界面制备有机半导体小分子单晶薄膜的方法
CN106854775B (zh) * 2016-11-11 2019-06-18 苏州大学 利用水-空气-有机溶剂三相界面制备有机半导体小分子单晶薄膜的方法

Also Published As

Publication number Publication date
JP5212711B2 (ja) 2013-06-19
CN101796621B (zh) 2012-06-20
US20100213448A1 (en) 2010-08-26
EP2190007B1 (en) 2018-08-15
CN101796621A (zh) 2010-08-04
EP2190007A1 (en) 2010-05-26
KR101483813B1 (ko) 2015-01-16
US8309393B2 (en) 2012-11-13
KR20100063732A (ko) 2010-06-11
JP2009078963A (ja) 2009-04-16
EP2190007A4 (en) 2012-07-18

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