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WO2004053975A1 - Chip-on-film and its methods of manufacturing by electro-forming - Google Patents

Chip-on-film and its methods of manufacturing by electro-forming Download PDF

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Publication number
WO2004053975A1
WO2004053975A1 PCT/KR2003/002726 KR0302726W WO2004053975A1 WO 2004053975 A1 WO2004053975 A1 WO 2004053975A1 KR 0302726 W KR0302726 W KR 0302726W WO 2004053975 A1 WO2004053975 A1 WO 2004053975A1
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WO
WIPO (PCT)
Prior art keywords
electro
forming
chip
base
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2003/002726
Other languages
French (fr)
Inventor
Jeong-Sik Kim
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
GRAPHION TECHNOLOGIES USA LLC
Original Assignee
GRAPHION TECHNOLOGIES USA LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020020080087A external-priority patent/KR20040051464A/en
Priority claimed from KR1020020084669A external-priority patent/KR20040055536A/en
Application filed by GRAPHION TECHNOLOGIES USA LLC filed Critical GRAPHION TECHNOLOGIES USA LLC
Priority to AU2003302847A priority Critical patent/AU2003302847A1/en
Publication of WO2004053975A1 publication Critical patent/WO2004053975A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
    • H01L21/4814—Conductive parts
    • H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/4985—Flexible insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
    • H01L21/4814—Conductive parts
    • H01L21/4821—Flat leads, e.g. lead frames with or without insulating supports
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Definitions

  • the present invention relates to a chip-on-film and its manufacturing method, in which the chip-on-film for a minute conducting circuit used in semiconductor and other electronic devices is made by an electro-forming process.
  • the chip-on-film is used in various fields.
  • the chip- on-film having a minute pattern has conventionally been formed by an etching process.
  • the chip-on-film can be formed by an electro-forming process, and an electro-forming master is used to form an electro-forming member.
  • the electro-forming master is digested in an electro- forming tub to obtain a metal minute pattern. A base portion of the chip-on-film is attached to the metal pattern, and the chip-on-film is obtained by detaching the metal pattern and the base portion from the electro- forming master.
  • a conventional etching process for forming a chip-on- film has limitation in accuracy because it employs a method based on metal corrosion. Also, the etching process causes corroded material to be necessarily removed.
  • a chip-on-film is formed by an electro-forming process that can obtain more precise chip-on-film than a metal pattern obtained by the etching process. Unlike the etching process, since only material required for a metal minute pattern is used for electro-forming master in the present invention, waste of material is avoided.
  • each product is exposed to be repeatedly formed in an electro- forming tub by an electro-forming process without etching. This enables that the product can be manufactured simply in comparison with the conventional method.
  • the present invention is directed to a chip-on-film and its manufacturing method that substantially obviates one or more of the problems due to limitations and disadvantages of the related art.
  • An object of the present invention is to provide a chip-on-film and its manufacturing method in which a chip- on-film is repeatedly formed by an electro-forming process
  • a chip-on-film in which a thin base portion is attached to a minute pattern of thin metal is manufactured by including the steps of forming the minute pattern by performing an electro-forming process in an electro-forming master including an electrode base and an insulating hetero-portion having elasticity formed in the electrode base, forming the base portion on the electro-forming master in an integral form with the minute pattern, and detaching the minute pattern and the base portion from the electro-forming master.
  • the insulating hetero-portion is filled in the concave portion of the electrode base.
  • the concave portion is formed by an etching process.
  • the insulating hetero-portion includes a pin portion protruded upward of the electrode base and a root portion positioned below the pin portion and formed inside the electrode base.
  • the insulating hetero-portion filled in the concave portion serves as the root portion by foaming the filled hetero-material and the hetero- portion protruded by foaming serves as the pin portion.
  • the base portion is formed of a thin adhesive film.
  • the thin film is polyamide film.
  • the base portion is hardened by depositing liquid resin.
  • the liquid resin is thermoplastic resin.
  • An example of the liquid resin includes polyamide.
  • the insulating hetero- material portion of the present invention has elasticity.
  • the insulating hetero-material portion having elasticity includes silicon as a main component. Silicon has elasticity in addition to excellent insulating and hetero characteristics .
  • FIG. 1 illustrates a method for manufacturing an electrode base having the same shape as that of a pattern
  • FIG. 2 illustrates a method for manufacturing an electro-forming master for an electro-forming member of a minute pattern of a thin metal by an electro-forming process
  • FIGs . 3a and 3b illustrate the state that electro- forming is implemented by digesting an electro-forming master in an electro-forming tub;
  • FIGs. 4a and 4b illustrate various types of patterns and a base supporting the patterns
  • FIG. 5 illustrates a method for manufacturing a chip- on-film by attaching a film to an electro-forming member of a thin metal minute pattern formed in the electro- forming master
  • FIG. 6 illustrates a method for manufacturing a chip- on-film using liquid resin
  • FIG. 7 illustrates another electro-forming master in which a hetero material of a pin portion and a root portion are formed
  • FIGs. 8a and 8b illustrate a plane electro-forming master in which a hetero-material is flush with an electrode base and a method for manufacturing a chip-on- film by the electro-forming master;
  • FIG. 9 illustrates a chip—on-film of three-side adhesion according to another embodiment of the present invention.
  • FIG. 10 illustrates a plane electro-forming master using a foaming hetero-material according to another embodiment of the present invention.
  • FIG. 1 illustrates a method for manufacturing an electrode base having the same shape as that of a pattern.
  • a chip-on-film 11 is made of a metal minute pattern 12 attached to a base portion 13 on a thin film as shown in FIG. 4.
  • a film having a transparent portion and an opaque portion is first used. Patterns of the transparent portion and the opaque portion are formed in the film as metal minute patterns .
  • the patterns of thin metal are formed by an electro-forming process and a base portion is formed in the electro-formed patterns.
  • the chip-on-film is manufactured by detaching the patterns and the base portion from an electro-forming master in a state that the base portion is attached to the patterns and hardened.
  • the electro-forming master is repeatedly be used so as to enable mass production of a chip-on-film.
  • a photoresist 2 is deposited at a predetermined thickness on an electrode base basic material 1 of plate shaped conductive metal that can facilitate detachment of an electro-forming member formed of a minute pattern of thin metal.
  • an exposing portion 3 is formed as shown.
  • An etching spaceportion 5 is formed by an etching process in the electrode base basic material 1, in which the exposing portion 3 is formed.
  • the etching space portion 5 serves as a hole that passes through the electrode base basic material 1.
  • the etching process may be performed simultaneously in lower and upper portions of the electrode base basic material.
  • the electrode base basic material having the etching space portion 5 has the same pattern as a minute pattern of thin metal.
  • a conductive metal having such a pattern is defined as an electrode base 4 in the present invention.
  • FIG. 2 illustrates a method for manufacturing an electro-forming master to obtain an electro-forming member of a minute metal pattern by an electro-forming process.
  • Two electrode bases 4 and 6 are formed and overlapped with each other.
  • the upper electrode base 6 and the lower electrode base 4 may have the same thickness. However, the thickness of the upper electrode base 6 is adjusted in response to the thickness of an electro-forming member 10 of a minute metal pattern, which will be substantially manufactured.
  • a plate shaped base portion 9 is positioned below the overlapped electrode bases 4 and 6 in a state that it is separated from the lower electrode base at a predetermined distance.
  • An insulating hetero-material is filled between the base portion 9 and the overlapped electrode bases 4 and 6. The hetero-material is then arranged horizontally around the height of the upper electrode base.
  • the electro-forming master is completed.
  • the lower electrode base 4 which is exposed in a space formed by removing the upper electrode base, serves as an electrode base of the electro-forming master.
  • the insulating hetero-material protruded higher than the surface of the electrode base is defined as a hetero-material 7 of a pin portion.
  • a hetero-material formed below the hetero- material 7 of the pin portion is defined as a root portion. The root portion serves to fasten the hetero-material of the pin portion to the electrode base.
  • FIGs. 3a and -3b illustrate the state that electro- forming is implemented by digesting an electro-forming m'aster in an electro-forming tub.
  • a negative electrode (-) to the electrode base 4
  • ionized metal starts to be coupled with the electrode base 4.
  • the ionized metal starts to be formed in the electrode base as a minute pattern 10 (electro-forming member) of a thin metal.
  • Conductive metal such as nickel and copper is used as an electro-forming metal.
  • the electro-forming member 10 gradually becomes thick to have the height as high as the hetero-material of the pin portion. When the electro- forming member is as high as the hetero-material of the pin portion, it can be detached from the electro-forming master .
  • FIG. 5 illustrates a method for manufacturing a i chip-on-film by attaching a film to an electro-forming member of a thin metal minute pattern formed in the electro-forming master.
  • a thin adhesive film 15 is deposited on the hetero-material of the pin portion and the electro-forming member 10 grown at the same height as that of the hetero-material 7 of the pin portion.
  • the electro-forming member 10 is then detached from the electro-forming master to obtain a desired chip-on-film. That is, the chip-on-film of the present invention is obtained by attaching the minute pattern of thin metal to the film 15.
  • the insulating hetero-material includes a component that fails to attach the thin adhesive film thereto.
  • the insulating hetero-material is appropriately treated without being attached to the adhesive film because it has elasticity. If silicon is used as the hetero-material and copper is used as the minute pattern of thin metal, the adhesive film is attached to copper, not silicon. Polyamide film is preferably used as the adhesive film.
  • FIG. 6 illustrates a method for manufacturing a chip-on-film in which liquid resin is used to form a base portion.
  • a liquid resin 16 is thinly deposited on the electro-forming member 10 and the hetero-material of the pin portion at a uniform thickness.
  • the liquid resin is then dried and hardened. Afterwards, the resin and the electro-forming member are detached from the electro- forming master.
  • various types of resin such as polyamide resin and epoxy resin may be used.
  • thermoplastic resin may be used.
  • Resin-based material including various components may be used as the case may be.
  • FIG. 7 illustrates another electro-forming master in which a hetero material of a pin portion and a root portion are formed.
  • the etching process is performed in the upper surface of the electrode base at a certain depth to form an etching hole.
  • a root portion 8 that is an insulating hetero-material having elasticity is formed in the etching hole.
  • a hetero- material 7 of a pin portion that is an insulating hetero- material having elasticity is formed on the root portion.
  • the process of manufacturing a chip-on-film from the electro-forming master of this embodiment is the same as that of FIG. 2.
  • FIGs. 8a and 8b illustrate a plane electro-forming master in which a hetero-material is flush with an electrode base and a method for manufacturing a chip-on- film by the electro-forming master.
  • the plane electro-forming master is defined as one in which the surface of the hetero-material is flush with the surface of the electrode base.
  • the plane electro- forming • master can be manufactured by various methods. A photoresist is deposited on an electrode base basic material that is a conductive material, and a film having a specific pattern is exposed to form an exposing portion. The etching process is performed in the electrode base in which the exposing portion is formed, so that the upper surface of the electrode base is etched at a certain depth.
  • An insulating hetero-material is filled in the etching portion of the electrode base.
  • the insulating hetero- material is arranged to be flush with the surface of the electrode base.
  • the plane electro-forming master is completed.
  • the insulating hetero-material preferably has elasticity, although not necessarily required.
  • the method of manufacturing the plane electro-forming master will be described with reference to FIG. 8a. As shown in FIG. 8a, a photoresist 18 is deposited on an electrode base basic material 17 at a uniform thickness. A film having a pattern is exposed in the photoresist to form an exposing portion 19. The photoresist portion that is not exposed is washed to form a space portion 20.
  • the electrode base basic material in which the space portion 20 is formed is digested in an electro-forming tub.
  • the electro-forming process is then performed so that ion metal is grown in the space portion 20.
  • the electro-forming process continues to form an electro-forming member over the entire electrode base basic material 17.
  • the electro-forming process is performed until a thick body 21 is formed. Afterwards, once the thick body 21 is detached from the electrode base basic material 17, a part of the exposing portion serves as the electrode base 21 having a concave portion.
  • An insulating hetero-material 23 is filled in the concave portion of the electrode base 21.
  • the insulating hetero- material 23 is then arranged in parallel with the surface of the electrode base. Subsequently, once the hetero- material is hardened, the plane electro-forming master is completed. Since the electrode base has a strong structure, it is desirable in manufacturing a powerful electro- forming master.
  • FIG. 8b illustrates a method for manufacturing a chip-on-film by depositing liquid resin on a minute pattern formed using a plane electro-forming master.
  • a minute pattern 25 of thin metal is formed on the electrode base 21 by performing the electro-forming process in the electro-forming master.
  • the liquid resin is thinly deposited on the electro-forming master on which the pattern is formed.
  • the liquid resin is then hardened to form a base portion 26. Once the pattern and the base portion 26 are detached from the plane electro-forming master, the chip-on-film is completed. Since the conventional chip-on-film is formed by etching a sheet obtained by attaching a copper foil to a polyamide film, the base portion is only attached to the surface of the metal pattern.
  • the chip-on-film of the present invention is characterized by strong adhesion that can attach the liquid resin to the side of the minute pattern and its upper surface.
  • the base portion may be formed of the adhesive film.
  • FIG. 9 illustrates a chip-on-film of three-side adhesion according to another embodiment of the present invention.
  • a photoresist is deposited on an electrode base basic material. The photoresist portion is then exposed to form an exposing portion 3. The photoresist portion that is not exposed is washed to form a space portion.
  • the electro-forming process is performed in the electrode base 4 in which the exposing portion and the space portion are formed, so that a thin metal pattern 10 is formed.
  • the exposing portion is then removed.
  • Liquid resin is thinly deposited to form a base portion in a state that the exposing portion is removed. Once the base portion is detached from the electrode base, a chip-on-film having a three-side adhesion can be obtained.
  • the process of depositing the photoresist should be performed to obtain a chip-on-film.
  • FIG. 10 illustrates a plane electro-forming master using a foaming hetero-material according to another embodiment of the present invention.
  • a plane electro- forming master based on a foaming hetero-material 24 is obtained in such a manner that physical changes such as temperature change are given to the plane electro-forming master filled with an insulating hetero-material so as to foam and expand the hetero-material.
  • the hetero-material of the plane electro-forming master is filled with the foaming hetero-material and is foamed by changing physical conditions, the hetero-material has an arc shaped surface. In this case, the surface of the hetero-material is higher than the upper surface of the electrode base 21.
  • the foamed hetero-material below the surface of the electrode base serves as a root portion while that above the surface of the electrode base serves as an insulating pin portion. Therefore, if the electro-forming process is performed in the plane electro-forming master based on the foaming hetero-material 24, metal ions are grown only inside the arc shaped hetero-material. As a result, the metal ions can be prevented from being grown outside the arc shaped hetero-material. Silicon mixed with a foaming material foamed by heat may be used as the foaming hetero- material. In this case, once the hetero-material is filled and heated, it is to be expanded.
  • the base portion serves to support the electro-forming master to have durability.
  • the electrode base and the insulating hetero-material can be formed of various materials.
  • stainless steel may be used as the electrode base.
  • Stainless steel has excellent durability and serves to facilitate detachment of the electro-forming member formed of a minute pattern of thin metal such as copper or nickel.
  • an insulating hetero-material having elasticity is used as a hetero-material. If the insulating hetero-material has elasticity, stress does not occur between the electro-forming member grown by the electro- forming process and the hetero-material. In this case, the electro-forming master is detached from the hetero- material without any damage.
  • silicon is used as the hetero-material.
  • the hetero-material is not damaged in spite of detachment of the electro-forming member because the hetero-material has elasticity. Also, silicon serves to facilitate detachment of the electro-forming member.
  • various types of resin can be selected to form the base portion. That is, various additives may be used in accordance with required characteristics of the chip-on-film.
  • flexible material such as ceramic, other than resin may be used.
  • the present invention is characterized in that the electro-forming master including the insulating hetero- material is used to form a chip-on-film.
  • the insulating hetero-material of the present invention has elasticity to facilitate detachment of the electro-forming member during the electro-forming process.
  • the hardened register conventionally used for the electro-forming process is damaged or the electro-forming member is damaged by the register when the grown electro-forming member is detached from the electro-forming master.
  • the insulating hetero- material having elasticity is not affected by detachment of the electro-forming member. Therefore, the hetero- material of the present invention can repeatedly be used.
  • the electro-forming member affects the register and vice versa. In this case, if detachment of the electro-forming member is performed, the electro-forming member or the register is to be damaged. If strong material is selected so as not to damage the register, the electro-forming member is to be damaged. For this reason, the register for the electro- forming process has been conventionally considered a temporary use. That is, in the conventional method for mass production, the exposing and etching processes should be performed in each product. However, since the insulating hetero-material having elasticity is used in the present invention, the chip-on-film can repeatedly be formed by more simple process than the conventional process .
  • the conventional etching process for forming a chip-on-film has limitation in accuracy because it employs a method based on metal corrosion.
  • the etching process causes corroded material to be necessarily removed.
  • the metal minute pattern is formed by the electro-forming process that can obtain more precise metal pattern than a metal pattern obtained by the etching process. Unlike the etching process, since only material required for the metal minute pattern is used for the electro-forming master, waste of material is avoided.

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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
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Abstract

A chip-on-film and its manufacturing method are disclosed. The chip-on-film in which a thin base portion is attached to a minute pattern of thin metal is manufactured by including the steps of forming the minute pattern by performing an electro-forming process in an electro-forming process in an electro-forming master including an elecrrode base and an insulating hetero-portion having elasticity formed in the electrode base, forming the base, forming the base portion on the electro-forming master in an integral form with the minute pattern, and detaching the minute pattern and the base portion from the electro-forming master.

Description

CHIP-ON-FILM AND ITS METHODS OF MANUFACTURE BY
ELECTRO-FORMING
TECHNICAL FIF.T.T) The present invention relates to a chip-on-film and its manufacturing method, in which the chip-on-film for a minute conducting circuit used in semiconductor and other electronic devices is made by an electro-forming process. The chip-on-film is used in various fields. The chip- on-film having a minute pattern has conventionally been formed by an etching process. In the present invention, the chip-on-film can be formed by an electro-forming process, and an electro-forming master is used to form an electro-forming member. Also, in the present invention, the electro-forming master is digested in an electro- forming tub to obtain a metal minute pattern. A base portion of the chip-on-film is attached to the metal pattern, and the chip-on-film is obtained by detaching the metal pattern and the base portion from the electro- forming master.
BACKGROUND ART
A conventional etching process for forming a chip-on- film has limitation in accuracy because it employs a method based on metal corrosion. Also, the etching process causes corroded material to be necessarily removed. However, in the present invention, a chip-on-film is formed by an electro-forming process that can obtain more precise chip-on-film than a metal pattern obtained by the etching process. Unlike the etching process, since only material required for a metal minute pattern is used for electro-forming master in the present invention, waste of material is avoided. In the present invention, each product is exposed to be repeatedly formed in an electro- forming tub by an electro-forming process without etching. This enables that the product can be manufactured simply in comparison with the conventional method. There has been a conventional method for forming a chip-on-film by an electro-forming process based on a hardened register on an electrode base. The hardened register generates stress with the electro-forming member. When the electro-forming member is detached from the register as an electro-forming process is finished, the stress fails to easily detach the electro-forming member from the register. That is, when the electro-forming member is detached from the register, the electro-forming member affects the register and vice versa. This leads the electro-forming member or the register to be damaged. For this reason, the electro-forming process has been conventionally considered a temporary process. However, an insulating hetero- aterial having elasticity is used in the present invention instead of the hardened register. In this case, the hetero-material does not affect the electro-forming member when the electro-forming member is detached. Therefore, the electro-forming master of the present invention is characterized in that its detachment is simple so as to enable repeated use.
DISCLOSURE OF THE INVENTION
Accordingly, the present invention is directed to a chip-on-film and its manufacturing method that substantially obviates one or more of the problems due to limitations and disadvantages of the related art.
An object of the present invention is to provide a chip-on-film and its manufacturing method in which a chip- on-film is repeatedly formed by an electro-forming process Additional features and advantages of the invention will be set forth in the description which follows, and in part will be apparent from the description, or may be learned by practice of the invention. The objectives and other advantages of the invention will be realized and attained by the scheme particularly pointed out in the written description and claims hereof as well as the appended drawings .
To achieve these and other advantages and in accordance with the purpose of the present invention, as embodied and broadly described, a chip-on-film in which a thin base portion is attached to a minute pattern of thin metal is manufactured by including the steps of forming the minute pattern by performing an electro-forming process in an electro-forming master including an electrode base and an insulating hetero-portion having elasticity formed in the electrode base, forming the base portion on the electro-forming master in an integral form with the minute pattern, and detaching the minute pattern and the base portion from the electro-forming master. The insulating hetero-portion is filled in the concave portion of the electrode base. The concave portion is formed by an etching process. The insulating hetero-portion includes a pin portion protruded upward of the electrode base and a root portion positioned below the pin portion and formed inside the electrode base. The insulating hetero-portion filled in the concave portion serves as the root portion by foaming the filled hetero-material and the hetero- portion protruded by foaming serves as the pin portion. The base portion is formed of a thin adhesive film. The thin film is polyamide film. The base portion is hardened by depositing liquid resin. In this case, the liquid resin is thermoplastic resin. An example of the liquid resin includes polyamide. Preferably, the insulating hetero- material portion of the present invention has elasticity. The insulating hetero-material portion having elasticity includes silicon as a main component. Silicon has elasticity in addition to excellent insulating and hetero characteristics .
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory and are intended to provide further explanation of the invention as claimed.
BRIEF DESCRIPTION OF THE DRAWINGS
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention. In the drawings : FIG. 1 illustrates a method for manufacturing an electrode base having the same shape as that of a pattern; FIG. 2 illustrates a method for manufacturing an electro-forming master for an electro-forming member of a minute pattern of a thin metal by an electro-forming process;
FIGs . 3a and 3b illustrate the state that electro- forming is implemented by digesting an electro-forming master in an electro-forming tub;
FIGs. 4a and 4b illustrate various types of patterns and a base supporting the patterns;
FIG. 5 illustrates a method for manufacturing a chip- on-film by attaching a film to an electro-forming member of a thin metal minute pattern formed in the electro- forming master;
FIG. 6 illustrates a method for manufacturing a chip- on-film using liquid resin;
FIG. 7 illustrates another electro-forming master in which a hetero material of a pin portion and a root portion are formed;
FIGs. 8a and 8b illustrate a plane electro-forming master in which a hetero-material is flush with an electrode base and a method for manufacturing a chip-on- film by the electro-forming master;
FIG. 9 illustrates a chip—on-film of three-side adhesion according to another embodiment of the present invention; and
FIG. 10 illustrates a plane electro-forming master using a foaming hetero-material according to another embodiment of the present invention.
BEST MODE FOR CARRYING OUT THE INVENTION
Reference will now be made in detail to the preferred embodiments of the present invention, examples of which are illustrated in the accompanying drawings.
FIG. 1 illustrates a method for manufacturing an electrode base having the same shape as that of a pattern. A chip-on-film 11 is made of a metal minute pattern 12 attached to a base portion 13 on a thin film as shown in FIG. 4. To obtain such a chip-on-film, a film having a transparent portion and an opaque portion is first used. Patterns of the transparent portion and the opaque portion are formed in the film as metal minute patterns . In the present invention, the patterns of thin metal are formed by an electro-forming process and a base portion is formed in the electro-formed patterns. The chip-on-film is manufactured by detaching the patterns and the base portion from an electro-forming master in a state that the base portion is attached to the patterns and hardened. In the present invention, the electro-forming master is repeatedly be used so as to enable mass production of a chip-on-film.
As shown in FIG. 1, a photoresist 2 is deposited at a predetermined thickness on an electrode base basic material 1 of plate shaped conductive metal that can facilitate detachment of an electro-forming member formed of a minute pattern of thin metal.
Once the photoresist 2 is exposed using a film, an exposing portion 3 is formed as shown. An etching spaceportion 5 is formed by an etching process in the electrode base basic material 1, in which the exposing portion 3 is formed. The etching space portion 5 serves as a hole that passes through the electrode base basic material 1. The etching process may be performed simultaneously in lower and upper portions of the electrode base basic material. The electrode base basic material having the etching space portion 5 has the same pattern as a minute pattern of thin metal. A conductive metal having such a pattern is defined as an electrode base 4 in the present invention.
FIG. 2 illustrates a method for manufacturing an electro-forming master to obtain an electro-forming member of a minute metal pattern by an electro-forming process. Two electrode bases 4 and 6 are formed and overlapped with each other. The upper electrode base 6 and the lower electrode base 4 may have the same thickness. However, the thickness of the upper electrode base 6 is adjusted in response to the thickness of an electro-forming member 10 of a minute metal pattern, which will be substantially manufactured. A plate shaped base portion 9 is positioned below the overlapped electrode bases 4 and 6 in a state that it is separated from the lower electrode base at a predetermined distance. An insulating hetero-material is filled between the base portion 9 and the overlapped electrode bases 4 and 6. The hetero-material is then arranged horizontally around the height of the upper electrode base. Subsequently, once the upper electrode base is removed after the hetero-material is hardened, the electro-forming master is completed. The lower electrode base 4, which is exposed in a space formed by removing the upper electrode base, serves as an electrode base of the electro-forming master. At this time, the insulating hetero-material protruded higher than the surface of the electrode base is defined as a hetero-material 7 of a pin portion. Also, a hetero-material formed below the hetero- material 7 of the pin portion is defined as a root portion. The root portion serves to fasten the hetero-material of the pin portion to the electrode base.
FIGs. 3a and -3b illustrate the state that electro- forming is implemented by digesting an electro-forming m'aster in an electro-forming tub. Once an electro-forming process is started in an electro-forming tub by connecting a negative electrode (-) to the electrode base 4, ionized metal starts to be coupled with the electrode base 4. The ionized metal starts to be formed in the electrode base as a minute pattern 10 (electro-forming member) of a thin metal. Conductive metal such as nickel and copper is used as an electro-forming metal. The electro-forming member 10 gradually becomes thick to have the height as high as the hetero-material of the pin portion. When the electro- forming member is as high as the hetero-material of the pin portion, it can be detached from the electro-forming master .
FIG. 5 illustrates a method for manufacturing a i chip-on-film by attaching a film to an electro-forming member of a thin metal minute pattern formed in the electro-forming master. A thin adhesive film 15 is deposited on the hetero-material of the pin portion and the electro-forming member 10 grown at the same height as that of the hetero-material 7 of the pin portion. The electro-forming member 10 is then detached from the electro-forming master to obtain a desired chip-on-film. That is, the chip-on-film of the present invention is obtained by attaching the minute pattern of thin metal to the film 15. In the present invention, the insulating hetero-material includes a component that fails to attach the thin adhesive film thereto. Also, even in case that great pressure is applied to the insulating hetero- material in order to attach the adhesive film to the pattern, the insulating hetero-material is appropriately treated without being attached to the adhesive film because it has elasticity. If silicon is used as the hetero-material and copper is used as the minute pattern of thin metal, the adhesive film is attached to copper, not silicon. Polyamide film is preferably used as the adhesive film.
FIG. 6 illustrates a method for manufacturing a chip-on-film in which liquid resin is used to form a base portion. A liquid resin 16 is thinly deposited on the electro-forming member 10 and the hetero-material of the pin portion at a uniform thickness. The liquid resin is then dried and hardened. Afterwards, the resin and the electro-forming member are detached from the electro- forming master. In the present invention, various types of resin such as polyamide resin and epoxy resin may be used. Especially, thermoplastic resin may be used. Resin-based material including various components may be used as the case may be.
FIG. 7 illustrates another electro-forming master in which a hetero material of a pin portion and a root portion are formed. In this embodiment, the etching process is performed in the upper surface of the electrode base at a certain depth to form an etching hole. A root portion 8 that is an insulating hetero-material having elasticity is formed in the etching hole. A hetero- material 7 of a pin portion that is an insulating hetero- material having elasticity is formed on the root portion. The process of manufacturing a chip-on-film from the electro-forming master of this embodiment is the same as that of FIG. 2.
FIGs. 8a and 8b illustrate a plane electro-forming master in which a hetero-material is flush with an electrode base and a method for manufacturing a chip-on- film by the electro-forming master. In the present invention, the plane electro-forming master is defined as one in which the surface of the hetero-material is flush with the surface of the electrode base. The plane electro- forming • master can be manufactured by various methods. A photoresist is deposited on an electrode base basic material that is a conductive material, and a film having a specific pattern is exposed to form an exposing portion. The etching process is performed in the electrode base in which the exposing portion is formed, so that the upper surface of the electrode base is etched at a certain depth. An insulating hetero-material is filled in the etching portion of the electrode base. The insulating hetero- material is arranged to be flush with the surface of the electrode base. Once the arranged hetero-material is hardened, the plane electro-forming master is completed. In the plane electro-forming master, the insulating hetero-material preferably has elasticity, although not necessarily required. The method of manufacturing the plane electro-forming master will be described with reference to FIG. 8a. As shown in FIG. 8a, a photoresist 18 is deposited on an electrode base basic material 17 at a uniform thickness. A film having a pattern is exposed in the photoresist to form an exposing portion 19. The photoresist portion that is not exposed is washed to form a space portion 20. The electrode base basic material in which the space portion 20 is formed is digested in an electro-forming tub. The electro-forming process is then performed so that ion metal is grown in the space portion 20. The electro-forming process continues to form an electro-forming member over the entire electrode base basic material 17. The electro-forming process is performed until a thick body 21 is formed. Afterwards, once the thick body 21 is detached from the electrode base basic material 17, a part of the exposing portion serves as the electrode base 21 having a concave portion. An insulating hetero-material 23 is filled in the concave portion of the electrode base 21. The insulating hetero- material 23 is then arranged in parallel with the surface of the electrode base. Subsequently, once the hetero- material is hardened, the plane electro-forming master is completed. Since the electrode base has a strong structure, it is desirable in manufacturing a powerful electro- forming master.
FIG. 8b illustrates a method for manufacturing a chip-on-film by depositing liquid resin on a minute pattern formed using a plane electro-forming master. A minute pattern 25 of thin metal is formed on the electrode base 21 by performing the electro-forming process in the electro-forming master. The liquid resin is thinly deposited on the electro-forming master on which the pattern is formed. The liquid resin is then hardened to form a base portion 26. Once the pattern and the base portion 26 are detached from the plane electro-forming master, the chip-on-film is completed. Since the conventional chip-on-film is formed by etching a sheet obtained by attaching a copper foil to a polyamide film, the base portion is only attached to the surface of the metal pattern. Unlike the conventional chip-on-film, the chip-on-film of the present invention is characterized by strong adhesion that can attach the liquid resin to the side of the minute pattern and its upper surface. Also, in the present invention, the base portion may be formed of the adhesive film. FIG. 9 illustrates a chip-on-film of three-side adhesion according to another embodiment of the present invention. A photoresist is deposited on an electrode base basic material. The photoresist portion is then exposed to form an exposing portion 3. The photoresist portion that is not exposed is washed to form a space portion. The electro-forming process is performed in the electrode base 4 in which the exposing portion and the space portion are formed, so that a thin metal pattern 10 is formed. The exposing portion is then removed. Liquid resin is thinly deposited to form a base portion in a state that the exposing portion is removed. Once the base portion is detached from the electrode base, a chip-on-film having a three-side adhesion can be obtained. However, there is a drawback in that the process of depositing the photoresist should be performed to obtain a chip-on-film.
FIG. 10 illustrates a plane electro-forming master using a foaming hetero-material according to another embodiment of the present invention. A plane electro- forming master based on a foaming hetero-material 24 is obtained in such a manner that physical changes such as temperature change are given to the plane electro-forming master filled with an insulating hetero-material so as to foam and expand the hetero-material. Once the hetero- material of the plane electro-forming master is filled with the foaming hetero-material and is foamed by changing physical conditions, the hetero-material has an arc shaped surface. In this case, the surface of the hetero-material is higher than the upper surface of the electrode base 21. The foamed hetero-material below the surface of the electrode base serves as a root portion while that above the surface of the electrode base serves as an insulating pin portion. Therefore, if the electro-forming process is performed in the plane electro-forming master based on the foaming hetero-material 24, metal ions are grown only inside the arc shaped hetero-material. As a result, the metal ions can be prevented from being grown outside the arc shaped hetero-material. Silicon mixed with a foaming material foamed by heat may be used as the foaming hetero- material. In this case, once the hetero-material is filled and heated, it is to be expanded.
In the present invention, the base portion serves to support the electro-forming master to have durability. The electrode base and the insulating hetero-material can be formed of various materials. As an example, stainless steel may be used as the electrode base. Stainless steel has excellent durability and serves to facilitate detachment of the electro-forming member formed of a minute pattern of thin metal such as copper or nickel. More preferably, an insulating hetero-material having elasticity is used as a hetero-material. If the insulating hetero-material has elasticity, stress does not occur between the electro-forming member grown by the electro- forming process and the hetero-material. In this case, the electro-forming master is detached from the hetero- material without any damage. In the present invention, silicon is used as the hetero-material. If silicon is used as the hetero-material, the hetero-material is not damaged in spite of detachment of the electro-forming member because the hetero-material has elasticity. Also, silicon serves to facilitate detachment of the electro-forming member. In the present invention, various types of resin can be selected to form the base portion. That is, various additives may be used in accordance with required characteristics of the chip-on-film. As an example, flexible material, such as ceramic, other than resin may be used.
INDUSTRIAL APPLICABILITY
The present invention is characterized in that the electro-forming master including the insulating hetero- material is used to form a chip-on-film. Preferably, the insulating hetero-material of the present invention has elasticity to facilitate detachment of the electro-forming member during the electro-forming process. The hardened register conventionally used for the electro-forming process is damaged or the electro-forming member is damaged by the register when the grown electro-forming member is detached from the electro-forming master. However, in the present invention, the insulating hetero- material having elasticity is not affected by detachment of the electro-forming member. Therefore, the hetero- material of the present invention can repeatedly be used. There has been a conventional method for forming a chip- on-film by an electro-forming process based on a hardened register. Strong stress occurs between the hardened register and the electro-forming member. The electro- forming member affects the register and vice versa. In this case, if detachment of the electro-forming member is performed, the electro-forming member or the register is to be damaged. If strong material is selected so as not to damage the register, the electro-forming member is to be damaged. For this reason, the register for the electro- forming process has been conventionally considered a temporary use. That is, in the conventional method for mass production, the exposing and etching processes should be performed in each product. However, since the insulating hetero-material having elasticity is used in the present invention, the chip-on-film can repeatedly be formed by more simple process than the conventional process .
Furthermore, the conventional etching process for forming a chip-on-film has limitation in accuracy because it employs a method based on metal corrosion. The etching process causes corroded material to be necessarily removed. However, in the present invention, the metal minute pattern is formed by the electro-forming process that can obtain more precise metal pattern than a metal pattern obtained by the etching process. Unlike the etching process, since only material required for the metal minute pattern is used for the electro-forming master, waste of material is avoided.
While the present invention has been described and illustrated herein with reference to the preferred embodiments thereof, it will be apparent to those skilled in the art that various modifications and variations can be made therein without departing from the spirit and scope of the invention. Thus, it is intended that the present invention covers the modifications and variations of this invention that come within the scope of the appended claims and their equivalents.

Claims

What is claimed is:
1. A chip-on-film in which a thin base portion is attached to a minute pattern of thin metal, the chip-on- film manufactured by comprising the steps of: forming the minute pattern by performing an electro- forming process in an electro-forming master including an electrode base and an insulating hetero-portion having elasticity formed in the electrode base; forming the base portion on the electro-forming master in an integral form with the minute pattern; and detaching the minute pattern and the base portion from the electro-forming master.
2. The chip-on-film according to claim 1, wherein the insulating hetero-portion is filled in a concave portion of the electrode base and its height is flush with the height of the electrode base.
3. The chip-on-film according to claim 2, wherein the concave portion is formed by an etching process.
4. The chip-on-film according to claim 1, wherein the insulating hetero-portion includes a pin portion protruded upward of the electrode base and a root portion positioned below the pin portion and formed inside the electrode base.
5. The chip-on-film according to claim 1, 2, 3, or 4, wherein the insulating hetero-portion filled in the concave portion serves as the root portion by foaming the filled hetero-material and the hetero-portion protruded by foaming serves as the pin portion.
6. The chip-on-film according to claim 1, 2, 3, or 4, wherein the insulating hetero-portion of the electro- forming master is an elastic body including silicon or foaming silicon as a main component.
7. The chip-on-film according to claim 1, 2, 3, or 4, wherein the base portion is formed of a thin adhesive film.
8. The chip-on-film according to claim 7, wherein the thin film is polyamide film.
9. The chip-on-film according to claim 1, 2, 3, or 4, wherein the base portion is hardened by depositing liquid resin.
10. The chip-on-film according to claim 9, wherein the liquid resin is thermoplastic resin.
11. The chip-on-film according to claim 9, wherein the liquid resin is polyamide.
12. The chip-on-film according to claim 9, wherein the liquid resin is epoxy.
13. A chip-on-film in which a thin base portion is attached to a minute pattern of thin metal, the chip-on- film manufactured by comprising the steps of: forming the minute pattern by performing an electro- forming process in an electro-forming master including an electrode base and an insulating hetero-portion having elasticity formed in the electrode base; depositing resin on the electro-forming master to form the base portion so that the side of the minute pattern and its surface are attached to the base portion at the same time; and detaching the minute pattern and the base portion from the electro-forming master.
14. The chip-on-film according to claim 13, wherein the insulating hetero-portion is filled in a concave portion of the electrode base and its height is flush with the height of the electrode base.
15. The chip-on-film according to claim 13, wherein the concave portion is formed by an etching process.
16. A method for manufacturing a chip-on-film in which a thin base portion is attached to a minute pattern of thin metal, the method comprising the steps of: forming the minute pattern by performing an electro- forming process in an electro-forming master including an electrode base and an insulating hetero-portion having elasticity formed in the electrode base; forming the base portion on the electro-forming master in an integral form with the minute pattern; and detaching the minute pattern and the base portion from the electro-forming master.
17. The method according to claim 16, wherein the insulating hetero-portion is filled in a concave portion of the electrode base and its height is flush with the height of the electrode base.
18. The method according to claim 17, wherein the concave portion is formed by an etching process.
19. The method according to claim 16, wherein the insulating hetero-portion includes a pin portion protruded upward of the electrode base and a root portion positioned below the pin portion and formed inside the electrode base.
20. The method according to claim 16, 17, 18, or 19, wherein the insulating hetero-portion filled in the concave portion serves as the root portion by foaming the filled hetero-material and the hetero-portion protruded by foaming serves as the pin portion.
21. The method according to claim 16, 17, 18, or 19, wherein the insulating hetero-portion of the electro- forming master is an elastic body including silicon or foaming silicon as a main component.
22. The method according to claim 16, 17, 18, or 19, wherein the base portion is formed of a thin adhesive film.
23. The method according to claim 19, wherein the thin film is polyamide film.
24. The method according to claim 16, 17, 18, or 19, wherein the base portion is hardened by depositing liquid resin.
25. The method according to claim 24, wherein the liquid resin is thermoplastic resin.
26. The method according to claim 24, wherein the liquid resin is polyamide.
27. The method according to claim 24, wherein the liquid resin is epoxy.
28. A method for manufacturing a chip-on-film in which a thin base portion is attached to a minute pattern of thin metal, the method comprising the steps of: forming the minute pattern by performing an electro- forming process in an electro-forming master including an electrode base and an insulating hetero-portion having elasticity formed in the electrode base; depositing resin on the electro-forming master to form the base portion so that the side of the minute pattern and its surface are attached to the base portion at the same time; and detaching the minute pattern and the base portion from the electro-forming master.
29. The method according to claim 28, wherein the insulating hetero-portion is filled in a concave portion of the electrode base and its height is flush with the height of the electrode base.
30. The method according to claim 29, wherein the concave portion is formed by an etching process.
31. A chip-on-film of three-side adhesion manufactured by comprising the steps of: depositing a photoresist on an electrode base; exposing the electrode base to form an exposing portion; forming an unexposed portion other than the exposing portion as a space portion; forming a minute pattern by performing an electro- forming process in the electrode base including the exposing portion and the space portion; removing the exposing portion; thinly depositing resin on the electrode base to form a base portion in a state that the exposing portion is removed; detaching the minute pattern and the base portion from the electro-forming master after the base portion is hardened.
32. A method for manufacturing a chip-on-film of three-side adhesion comprising the steps of: depositing a photoresist on an electrode base; exposing the electrode base to form an exposing portion; forming an unexposed portion other than the exposing portion as a space portion; forming a minute pattern by performing an electro- forming process in the electrode base including the exposing portion and the space portion; removing the exposing portion; thinly depositing resin on the electrode base to form a base portion in a state that the exposing portion is removed; detaching the minute pattern and the base portion from the electro-forming master after the base portion is hardened.
PCT/KR2003/002726 2002-12-12 2003-12-12 Chip-on-film and its methods of manufacturing by electro-forming Ceased WO2004053975A1 (en)

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KR10-2002-0080087 2002-12-12
KR1020020080087A KR20040051464A (en) 2002-12-12 2002-12-12 Chip on film by electroplating and its manufacturing method.
KR1020020084669A KR20040055536A (en) 2002-12-20 2002-12-20 Chip on film by electroplating and its manufacturing method.
KR10-2002-0084669 2002-12-20

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108682665A (en) * 2018-05-16 2018-10-19 清华大学 The manufacturing method of stretchable flexible electronic device

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61234060A (en) * 1985-04-10 1986-10-18 Kyushu Hitachi Maxell Ltd Manufacture of lead frame of semiconductor device
JPS6258667A (en) * 1985-09-09 1987-03-14 Kyushu Hitachi Maxell Ltd lead carrier film
KR0144918B1 (en) * 1995-02-23 1998-07-01 이대원 Manufacturing method of lead frame
JPH11140667A (en) * 1997-11-13 1999-05-25 Dainippon Printing Co Ltd Etching base material, etching method and product
KR20020062540A (en) * 2001-01-22 2002-07-26 김태환 method of manuacturing master

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61234060A (en) * 1985-04-10 1986-10-18 Kyushu Hitachi Maxell Ltd Manufacture of lead frame of semiconductor device
JPS6258667A (en) * 1985-09-09 1987-03-14 Kyushu Hitachi Maxell Ltd lead carrier film
KR0144918B1 (en) * 1995-02-23 1998-07-01 이대원 Manufacturing method of lead frame
JPH11140667A (en) * 1997-11-13 1999-05-25 Dainippon Printing Co Ltd Etching base material, etching method and product
KR20020062540A (en) * 2001-01-22 2002-07-26 김태환 method of manuacturing master

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108682665A (en) * 2018-05-16 2018-10-19 清华大学 The manufacturing method of stretchable flexible electronic device
CN108682665B (en) * 2018-05-16 2019-06-18 清华大学 Fabrication of stretchable and flexible electronic devices

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