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WO2003019168A1 - Metal oxide semiconductor gas sensor - Google Patents

Metal oxide semiconductor gas sensor Download PDF

Info

Publication number
WO2003019168A1
WO2003019168A1 PCT/JP2002/006808 JP0206808W WO03019168A1 WO 2003019168 A1 WO2003019168 A1 WO 2003019168A1 JP 0206808 W JP0206808 W JP 0206808W WO 03019168 A1 WO03019168 A1 WO 03019168A1
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
metal oxide
gas sensor
high frequency
depressurizing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2002/006808
Other languages
French (fr)
Japanese (ja)
Inventor
Teruaki Katsube
Kousei Onoue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Uchiya Thermostat Co Ltd
Original Assignee
Uchiya Thermostat Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Uchiya Thermostat Co Ltd filed Critical Uchiya Thermostat Co Ltd
Publication of WO2003019168A1 publication Critical patent/WO2003019168A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
    • G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)

Abstract

A metal oxide semiconductor gas sensor and a method of manufacturing the gas sensor, the gas sensor comprising a guided plasma thermal spraying device (20) formed of a depressurizing tank (21) having an electrode (15) formed on a substrate (10) and incorporating an insulation board (22) for placing the substrate thereon and a plasma torch (24) connected to the depressurizing tank and having a powder leading probe (26) and a high frequency coil (25), the method comprising the steps of, by using the guided plasma thermal spraying device (20), placing the substrate on the insulation board, setting a clearance between the substrate side tip of the powder leading probe and the substrate to 1000 mm or shorter, depressurizing the depressurizing tank, supplying metal oxide powder from the powder leading probe while generating high frequency guided plasma from the high frequency coil, and depositing, on the surface of the substrate, the metal oxide formed of a large grain part with large gain sizes and a large number of small grain parts formed on the peripheral surface of the large grain part.
PCT/JP2002/006808 2001-08-27 2002-07-04 Metal oxide semiconductor gas sensor Ceased WO2003019168A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001255541A JP4659295B2 (en) 2001-08-27 2001-08-27 Metal oxide semiconductor gas sensor
JP2001-255541 2001-08-27

Publications (1)

Publication Number Publication Date
WO2003019168A1 true WO2003019168A1 (en) 2003-03-06

Family

ID=19083494

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2002/006808 Ceased WO2003019168A1 (en) 2001-08-27 2002-07-04 Metal oxide semiconductor gas sensor

Country Status (2)

Country Link
JP (1) JP4659295B2 (en)
WO (1) WO2003019168A1 (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006023224A (en) * 2004-07-09 2006-01-26 Uchiya Thermostat Kk Gas detecting element and its manufacturing method
EP2282198A1 (en) * 2004-11-24 2011-02-09 Sensirion Holding AG Method for applying a layer to a substrate
JP4845469B2 (en) * 2005-10-07 2011-12-28 富士電機株式会社 Thin film gas sensor
EP1841002B1 (en) * 2006-03-31 2009-05-20 Sony Deutschland Gmbh Battery leakage detection system
JP2007322184A (en) * 2006-05-31 2007-12-13 Ngk Spark Plug Co Ltd Ammonia gas sensor
JP5638765B2 (en) * 2009-03-25 2014-12-10 ウチヤ・サーモスタット株式会社 Method for producing deposited film containing nanoparticles
JP6687931B2 (en) * 2016-08-25 2020-04-28 フィガロ技研株式会社 SnO2-based gas sensor
CN113447530B (en) * 2021-02-26 2022-09-09 河南大学 a gas sensor

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59119253A (en) * 1982-12-25 1984-07-10 Ngk Spark Plug Co Ltd Gas sensitive element
JPH055713A (en) * 1991-10-31 1993-01-14 New Cosmos Electric Corp Method for manufacturing gas detection element
JPH06160324A (en) * 1992-10-23 1994-06-07 Yamatake Honeywell Co Ltd Nitrogen oxide detection element and manufacturing method thereof
JPH06288953A (en) * 1993-02-05 1994-10-18 Fuji Electric Co Ltd Thick film gas sensor
JPH08109463A (en) * 1994-10-12 1996-04-30 Agency Of Ind Science & Technol Ultra-high-speed plasma jet generator and method for producing thermal spray coating using the same
WO2001031324A1 (en) * 1999-10-27 2001-05-03 Ngk Spark Plug Co., Ltd. Oxygen sensor and method for manufacturing sensor element

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58131551A (en) * 1982-02-01 1983-08-05 Shinei Kk Sensor
JPS594113A (en) * 1982-06-30 1984-01-10 松下電器産業株式会社 Manufacturing method of humidity detection element
JPH0552790A (en) * 1991-08-28 1993-03-02 Ricoh Co Ltd Gas sensor
JPH05322818A (en) * 1992-05-25 1993-12-07 Takeo Oki Temperature / humidity ceramic sensor and its manufacturing method
DE69922776T2 (en) * 1999-01-21 2005-12-08 Sony International (Europe) Gmbh Nanoparticle structure for use in an electronic device, in particular in a chemical sensor
JP3812215B2 (en) * 1999-04-02 2006-08-23 富士電機機器制御株式会社 Thin film gas sensor

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59119253A (en) * 1982-12-25 1984-07-10 Ngk Spark Plug Co Ltd Gas sensitive element
JPH055713A (en) * 1991-10-31 1993-01-14 New Cosmos Electric Corp Method for manufacturing gas detection element
JPH06160324A (en) * 1992-10-23 1994-06-07 Yamatake Honeywell Co Ltd Nitrogen oxide detection element and manufacturing method thereof
JPH06288953A (en) * 1993-02-05 1994-10-18 Fuji Electric Co Ltd Thick film gas sensor
JPH08109463A (en) * 1994-10-12 1996-04-30 Agency Of Ind Science & Technol Ultra-high-speed plasma jet generator and method for producing thermal spray coating using the same
WO2001031324A1 (en) * 1999-10-27 2001-05-03 Ngk Spark Plug Co., Ltd. Oxygen sensor and method for manufacturing sensor element

Also Published As

Publication number Publication date
JP4659295B2 (en) 2011-03-30
JP2003065989A (en) 2003-03-05

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