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WO2003012941A2 - Dispositif de controle de la dynamique de systemes laser - Google Patents

Dispositif de controle de la dynamique de systemes laser Download PDF

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Publication number
WO2003012941A2
WO2003012941A2 PCT/EP2002/008104 EP0208104W WO03012941A2 WO 2003012941 A2 WO2003012941 A2 WO 2003012941A2 EP 0208104 W EP0208104 W EP 0208104W WO 03012941 A2 WO03012941 A2 WO 03012941A2
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WO
WIPO (PCT)
Prior art keywords
laser
control
controlled
dynamic
resonator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2002/008104
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German (de)
English (en)
Other versions
WO2003012941A3 (fr
Inventor
Franz Xaver KÄRTNER
Uwe Morgner
Thomas Schibli
Wolfgang Seitz
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Karlsruher Institut fuer Technologie KIT
Original Assignee
Universitaet Karlsruhe
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Universitaet Karlsruhe filed Critical Universitaet Karlsruhe
Priority to AU2002327889A priority Critical patent/AU2002327889A1/en
Publication of WO2003012941A2 publication Critical patent/WO2003012941A2/fr
Publication of WO2003012941A3 publication Critical patent/WO2003012941A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
    • H01S3/1106—Mode locking
    • H01S3/1109—Active mode locking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
    • H01S3/1061—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using a variable absorption device

Definitions

  • the present invention relates to what is claimed in the preamble. It deals with the control of laser dynamics, especially the control against rapid instabilities.
  • a certain behavior will be optimal for an application; A suitable design of the laser system can be used to try to obtain this optimal behavior at least approximately; this also applies to a desired dynamic behavior.
  • the freely selectable parameters are often not sufficient with regard to their finite variation possibilities and number, so that the dynamic properties of the laser system achieve the desired requirements.
  • the instabilities and power fluctuations can be controlled through active feedback.
  • the start-up behavior of passively mode-locked lasers can be improved by suitable modulation of the losses and / or the net gain within the resonator, or the mode locking can be implemented entirely by loss modulation and / or a modulation of the net gain, which is then referred to as active mode locking.
  • TR Schibli, U. Morgner and FX Kärtner have also published "Control of Q-switched mode locking by active feedback," Optics Letters (OSA), Vol. 26, No. 3, Feb. 1 / 2,001, presented a method that dynamically changes one or more parameters of the laser system through active feedback. In this way, the feedback loop can modulate the pumping power of the laser system.
  • An optically controlled interactive Q-switch is also known from US Pat. No. 5,408,480, which responds to a short light pulse, for example from external light emitting devices. diodes or diode lasers to generate an output laser pulse from electronic energy stored in a laser. The switching frequency is intended to provide independent regulation of the output laser pulse width with a fast rise time for each output laser pulse.
  • a laser system is also known in which the laser pulse energy is controlled by feedback from the laser Q-switch.
  • a feedback signal is used to control the duration of the high loss state of the Q switch to automatically adjust the output pulse energy.
  • a microlaser cavity is known and an externally controlled, passive switching microlaser for pulses with a saturable absorber and a device for introducing a beam into the microlaser cavity, which triggers the saturation of the saturable absorber.
  • Also known from DE 199 62 047 AI is a device for fast active stabilization of the output laser power, a fraction of the output signal of the laser, regulated by active feedback, being fed to the input of the laser in such a way that the laser output power mediated via the resonator cycle time remains constant.
  • DE 196 07 689 AI shows a quality-controlled solid-state laser that has a narrow-band laser diode that delivers a narrow-band output radiation as seed radiation to excite a solid, so that only a single wavelength-stable longi- tudinal mode swings and corresponding radiation is emitted.
  • Loss modulators are known, for example, which are based on the electro-optical or acousto-optical effect. However, these often require voltages in the range of a few kilovolts, which is a limiting factor with regard to high bandwidths. Furthermore, known loss modulators based, for example, on the electro-optical or acousto-optical effect, are not suitable for use in a laser resonator with a high repetition rate, because the optical path length of these modulators is generally a few centimeters. This makes their use in laser resonators of 1.5 cm optical length, corresponding to a pulse repetition rate of 10 GHz, impossible.
  • Known loss modulators which are based, for example, on the electro-optical, electro-absorptive or acousto-optical effect, also generally influence the properties of a laser in such a negative manner due to their optical properties, in particular their insertion losses, optical dispersion, thermally induced lens or limited bandwidth. that their use is further restricted.
  • passive mode-locked laser systems which use so-called saturable semiconductor absorbers for passive mode locking.
  • SBR so-called “Saturable Bragg Reflector”
  • SAM ie” Saturable Absorber Mirror
  • SESAM SESAM
  • ie SEmiconductor Saturable Absorber Mirror
  • the aim of the present invention is to provide something new for commercial use.
  • a dynamic-controlled laser with a resonator and a laser power detection is thus proposed, which is characterized in that a light source controlling an optical modulator in response to the detected laser power is provided for dynamic control and the laser power detection is designed to detect the laser power averaged by the resonator.
  • Various optical modulators can now be used. In principle, it is possible to influence the emission of the dynamically controlled laser by modulating a control light source.
  • the modulation of a control light source is often very fast, that is possible with high frequencies; since the influencing of an optical modulator by control light is a process that can take place very quickly, for example because fast solid-state processes such as band transitions in semiconductors or the like. a particularly high-frequency dynamic control is possible.
  • the present invention thus allows the construction of a fast and inexpensive loss or gain modulator that can be used within a laser resonator without negatively affecting its optical properties - apart from the modulable losses or gains.
  • the optical modulator is a loss modulator, which provides for a loss, in particular in the resonator, due to the light source control.
  • the optical modulator can then consist of a semiconductor material which has a predetermined minimum absorption at the wavelength of the controlling light source, which is sufficient to generate such a quantity and / or density of charge carriers that the laser light of the laser to be controlled with regard to its dynamics is desired is absorbed and / or amplified, while the semiconductor material not acted on by control light source is at least largely transparent to the laser light of the laser to be checked with regard to its dynamics.
  • a device for laser dynamics control can be used both inside and outside a laser resonator and it is possible and preferred if the dynamics-controlled laser has an absorber mirror which comprises and / or represents a saturable Bragg reflector, a semiconducting saturable absorber mirror and / or a Fabry-Perot resonator is assigned, the transmission behavior and / or reflection behavior of which can be changed by the control light source.
  • the saturable absorber mirror can typically consist of a layer stack of two materials which differ in the optical refractive index. The layer thicknesses of this stack are chosen so that their optical thicknesses correspond to a quarter wavelength of the laser light.
  • Bragg reflectors By this structure, which is referred to as "Bragg reflectors", produces a highly reflective mirror at the wavelength of the laser '.
  • a saturable absorber is typically applied to this structure, which has the property that its losses are low with high-intensity lighting and high with low-intensity lighting. These saturable absorbers can be achieved by a variety of arrangements.
  • a particularly advantageous feature of the devices according to the invention is the preferably implemented possibility of using the externally controllable free charge carrier absorption in a targeted manner with a loss modulator.
  • the optical modulator uses the principle of free charge carrier absorption, which is also referred to as "FCA” for “free carrier absorption”, or the principle of the optical refractive index change caused by the free charge carriers within a semiconductor layer or within a potential well, which is also called “QW" for "quantum well”.
  • a saturable absorber according to the invention is therefore preferably realized with a “quantum well” structure (QW).
  • QW quantum well structure
  • a material that is transparent to the wavelength of the laser can typically be placed on the so-called “Bragg- Mirror "in which the QW structure is embedded at a suitable distance from the Bragg mirror.
  • This transparent layer can now be selected so that it absorbs light from the auxiliary or control light source, which generates free charge carriers and lead the free charge carriers in this layer for the laser light to additional losses.
  • additional layers are applied, finally, leading for example to a field increase or a field reduction within the optically mo 'dulierbaren layer and the embedded QW structure.
  • an additional layer which minimizes the Fresnel reflection on the optically modulatable layer for wavelengths in the range of 1530 nm, ie serves as an anti-reflective coating if it is used with a laser emitting at or at this wavelength.
  • a loss modulator means which has thin semiconductor layers, for example in the range from a few hundred nm to a few ⁇ m in thickness.
  • the powers required to control the losses within the thin, preferably a few hundred nanometers to a few micrometers thin layer are only in the range of a few tens of milliwatts.
  • the light of an inexpensive laser diode of low power can be used, which permits direct modulation in the range of up to several GHz.
  • the semiconductor layers themselves are preferably selected so that the lifetime of the free charge carriers is only short. Due to the short lifespan of the free charge carriers in thin semiconductor layers of typically 10 ps to 1 ns, such devices according to the invention can be controlled much faster than, for example, in the case of direct modulation of the gain of the laser medium, i.e. a modulation of the pumping power, because the relevant characteristic time is the lifetime of the inversion of the winning medium, which is between I ⁇ s and 10ms in the usual solid materials.
  • the devices according to the invention can be used both for suppressing the power fluctuations and dynamic instabilities, such as Q-switch instabilities, of a laser system, as well as for starting the passive mode coupling and / or for active mode coupling, and for controlling and / or suppressing low-frequency and / or suppressing low-frequency and / or high-frequency fluctuations and / or for external noise suppression and / or for external intensity modulation can be used.
  • Loss modulators of the invention can preferably be used, for example, for active mode coupling, for active stabilization and for starting laser systems. In many cases, the use of such a loss modulator does not or only insignificantly affects the properties of the laser system - apart from the newly obtained possibility of controllable absorption.
  • the principles of the invention can also and especially be used in laser systems with high repetition rates.
  • a laser is preferably assigned a laser power detection for detecting the instantaneous laser output power and a linear or non-linear controlled system which is designed and provided to control the Control light source for optical control of the optically controlled loss or low modulator in the laser resonator.
  • the laser power detection is designed to detect the laser power averaged over a resonator circulation; the modulator controller can be designed for linear and / or non-linear response to the detected laser power, so as to form a linear or non-linear controlled system.
  • control light source and / or its control can and is now preferably designed so that it is possible to start the mode coupling process of the laser system and / or to effect and / or support a regenerative laser system mode coupling. Protection is also claimed for a device for controlling the dynamics of a laser in a dynamics-controlled laser according to one of the preceding claims.
  • a control and / or control path for linear and / or non-linear optical and / or electronic regulation and / or control of an optically controlled loss and / or gain modulator and a second laser is provided, the dynamics of which are controlled as a function of the loss and / or gain modulator, the loss and / or gain modulator in particular being arranged in the laser resonator of the second laser.
  • This device is preferred for starting the mode coupling process and / or for checking instabilities, used in particular by Q-switching and / or to control and / or suppress low-frequency fluctuations and / or high-frequency fluctuations and / or temporal fluctuations in the pulse-to-pulse interval and / or to synchronize at least two laser systems.
  • FIG. 1 shows a device according to the invention, which uses a so-called micro-chip laser, which has pulse repetition rates in the range of 10 GHz;
  • FIG. 1 shows a microchip laser with controlled dynamics as a laser according to the invention, which is designed to provide pulse repetition rates in the range of around 10 GHz.
  • the laser includes a continuously operated Nd: YV04 pump laser 1, which radiates pump light onto a Cr4 +: YAG laser crystal 8 via an intermediate optical system.
  • This laser system 1 supplies the energy required for the laser process with max. 16 W at a wavelength of 1064 nm and M2 ⁇ 1.1.
  • the interposed optics via which pump light from the continuously operated pump laser 1 is irradiated onto the Cr4 +: YAG laser crystal 8, initially comprises, in the beam path of the pump beam 4, a so-called optical diode or an optical isolator 2, the light only into the one shown Let the direction of the arrow pass, i.e. away from the pump laser.
  • a ⁇ / 2 plate 3 for polarization rotation of the pump beam in a desired direction and then a dichroic plate 5 are further provided behind the optical isolator 2.
  • the dichroic plate 5 is designed in such a way that pump light is transmitted further at 1064 nm in the direction of the laser crystal, but the laser light generated in the laser crystal 8 is reflected by 1500 nm.
  • a focusing optics which is represented by lenses 6, is then arranged in the beam path of the pump beam 4, the focused pump laser beam being directed onto the Cr4 +: YAG laser crystal 8.
  • the Cr4 +: YAG laser crystal 8 is arranged between two mirrors 7, 10 in a cooled crystal holder 9 and has a length of 8.2 mm here.
  • a particularly compact solid-state laser is thus formed. This type of laser is called a "microchip laser”.
  • the laser light coupled out of the laser crystal 8 via the coupling-out mirror 7 is irradiated onto a partially transparent mirror 12, which irradiates part of the light onto an intensity-sensitive photodetector 14.
  • An output signal from the intensity-sensitive photodetector 14 is applied to an electronic control with a control L Electronics 15 performed, which is designed to generate a suitable current signal, which is suitable for driving a further laser diode 11.
  • the further laser diode 11 emits low-intensity laser light, for example a few tens of milliwatts, via suitable focusing optics onto the controllable absorber mirror 10 of the laser resonator, in which the laser crystal 8 is located.
  • This low power of the laser diode 11 allows the electronic driver stage to be considerably simplified, both in comparison to the direct modulation of the currents of the pump diodes, which emit in the range from a few watts to a few tens of watts, and also in comparison to the electrical and acousto-optical modulators, which require voltages in the range of kilovolts.
  • the laser diode 11 is inexpensive thanks to its small power, and it is designed for direct modulation in the range of up to several GHz.
  • the absorber mirror 10 is designed as a controllable absorber mirror 10 and is implemented as an element according to the invention as in FIG. 2.
  • FIG. 2 shows that a saturable absorber according to the invention for a dynamically controlled laser or a device for dynamically controlling a laser with a quantum well structure can be implemented.
  • a material transparent to the wavelength of the laser is applied as a layer to a so-called Bragg mirror, in which a QW structure is embedded at a suitable distance from the Bragg mirror.
  • the transparency of the layer results here from the fact that the layer is formed as a semiconductor layer and the semiconductor is selected and designed such that the band gap of the Semiconductor material is energetically greater than the energy of the individual photons of the laser mode.
  • the semiconductor layer is at the same time formed in such a way that it absorbs light from the further laser diode 11 serving as auxiliary light source and the free charge carriers thereby generated in it
  • Layer for the laser light lead to additional losses. Finally, further layers are applied to this layer, which here lead, for example, to an increase or decrease in field within the optically modulatable layer and the QW structure embedded therein.
  • Fig. 2 an additional layer is shown, for example, which minimizes the Fresnel reflection on the optically modulatable layer for wavelengths in the range of 1530 nm, i.e. serves as an anti-reflective coating.
  • the arrangement according to the invention is now used in that light from the pump laser 1 is radiated into the laser crystal 8.
  • the light generated in the "microchip laser” is partially decoupled from the resonator by the decoupling mirror 7 and separated from the pump light 4 with the aid of a dichroic mirror 5, which has a transmitting effect for a wavelength of 1064 nm and is reflective for the generated laser light around 1500 nm.
  • a small part of this light acts on a photodetector 14 with the aid of a partially transparent mirror 12, while the other part of this light is available for use as an output beam 13 of the “microchip laser”.
  • the signal of the photodetector 14 is thereby via the linear and / or non-linear control electronics 15 to generate the auxiliary or.
  • a thin semiconductor layer is placed in a laser resonator in which the band gap of the semiconductor material is greater in energy than the energy of the individual photons of the laser mode, the internal losses of the laser system initially remain almost unchanged compared to the case without a semiconductor layer.
  • the fresnel reflections on the surfaces of the layer are avoided, for example by the position of the layer within the resonator or by suitable anti-reflective coatings. All of this is the case here, where the semiconductor layer is provided as a layer on the absorber mirror 10 in the resonator of the microcavity laser and the anti-reflective coatings are also implemented.
  • this layer is additionally illuminated with a light source whose photon energy is at least as large as the energy difference between the valence and conduction band of the layer, free charge carriers are generated within this layer.
  • the control light source which is implemented by the laser 11, serves for the illumination or modulation.
  • the so-called free charge carriers within the layer are in turn further excited by absorption of photons of the laser mode. This results in additional losses which can be influenced by the radiated power of the additional modulating light source mentioned. This results in controlled absorption, ie loss modulation.
  • Optical isolator lets light through only in the direction of the arrow
  • controllable absorber mirror e.g. according to FIG. 2
  • 11 laser diode for modulating the absorption of 10

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • Lasers (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)

Abstract

L'invention concerne un laser à moyens de contrôle de la dynamique, comprenant un résonateur et un détecteur de puissance du laser. L'invention est caractérisée en ce qu'il est prévu, pour le contrôle de la dynamique, un modulateur optique en réponse à la source lumineuse commandant la puissance détectée, et en ce que la détection de puissance du laser est réalisée en vue de la détection de la puissance laser par l'intermédiaire du circuit du résonateur. Le résonateur optique peut ainsi être formé de façon qu'il subisse une modification de l'indice de réfraction optique par radiation incidente de lumière, en particulier par radiation incidente de lumière de commande, notamment sur la base du principe de la libre absorption du support de charge au sein d'une couche semi-conductrice ou d'un puits de potentiel.
PCT/EP2002/008104 2001-07-20 2002-07-20 Dispositif de controle de la dynamique de systemes laser Ceased WO2003012941A2 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2002327889A AU2002327889A1 (en) 2001-07-20 2002-07-20 Device for controlling the dynamics of laser systems

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10135453.3 2001-07-20
DE2001135453 DE10135453A1 (de) 2001-07-20 2001-07-20 Vorrichtung zur Kontrolle der Dynamik von Lasersystemen

Publications (2)

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WO2003012941A2 true WO2003012941A2 (fr) 2003-02-13
WO2003012941A3 WO2003012941A3 (fr) 2003-10-02

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AU (1) AU2002327889A1 (fr)
DE (1) DE10135453A1 (fr)
WO (1) WO2003012941A2 (fr)

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CN103050870A (zh) * 2012-10-17 2013-04-17 北京工业大学 可光纤输出的新型微片激光器

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US7324568B2 (en) 2004-04-08 2008-01-29 Raytheon Company Modulated saturable absorber controlled laser
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US9680287B2 (en) 2013-10-01 2017-06-13 Université De Neuchâtel Opto-optical modulation of a saturable absorber for high bandwidth CEO stabilization of a femtosecond laser frequency comb

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103050870A (zh) * 2012-10-17 2013-04-17 北京工业大学 可光纤输出的新型微片激光器

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DE10135453A1 (de) 2003-01-30
WO2003012941A3 (fr) 2003-10-02
AU2002327889A1 (en) 2003-02-17

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