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WO2003055791A3 - Procede ameliore de gravure de microstructures - Google Patents

Procede ameliore de gravure de microstructures Download PDF

Info

Publication number
WO2003055791A3
WO2003055791A3 PCT/US2002/029853 US0229853W WO03055791A3 WO 2003055791 A3 WO2003055791 A3 WO 2003055791A3 US 0229853 W US0229853 W US 0229853W WO 03055791 A3 WO03055791 A3 WO 03055791A3
Authority
WO
WIPO (PCT)
Prior art keywords
opening
silicon
layer
etch process
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2002/029853
Other languages
English (en)
Other versions
WO2003055791A2 (fr
Inventor
Jeffrey D Chinn
Sofiane Soukane
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/265,698 external-priority patent/US7358008B2/en
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of WO2003055791A2 publication Critical patent/WO2003055791A2/fr
Publication of WO2003055791A3 publication Critical patent/WO2003055791A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00912—Treatments or methods for avoiding stiction of flexible or moving parts of MEMS
    • B81C1/0092—For avoiding stiction during the manufacturing process of the device, e.g. during wet etching
    • B81C1/00928—Eliminating or avoiding remaining moisture after the wet etch release of the movable structure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0128—Processes for removing material
    • B81C2201/013—Etching
    • B81C2201/0132—Dry etching, i.e. plasma etching, barrel etching, reactive ion etching [RIE], sputter etching or ion milling

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Micromachines (AREA)
  • Weting (AREA)

Abstract

L'invention concerne un procédé en deux étapes permettant de libérer des dispositifs micro-électro-mécaniques d'un substrat. La première étape de ce procédé consiste à graver de manière isotropique une couche d'oxyde de silicium prise en sandwich entre deux couches contenant du silicium, au moyen d'un mélange eau-fluorure d'hydrogène gazeux, ainsi que la couche de silicium sus-jacente à séparer de la couche de silicium sous-jacente ou du substrat pendant une période suffisante pour former une ouverture sans libérer la couche sous-jacente. La deuxième étape consiste à ajouter un desséchant pour qu'il se substitue à l'humidité restant dans l'ouverture et qu'il dissolve les résidus contenus dans ladite ouverture, pouvant provoquer la striction.
PCT/US2002/029853 2001-10-17 2002-10-11 Procede ameliore de gravure de microstructures Ceased WO2003055791A2 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US34449701P 2001-10-17 2001-10-17
US60/344,497 2001-10-17
US10/265,698 2002-10-08
US10/265,698 US7358008B2 (en) 2001-10-12 2002-10-08 Electrochemical device including electrolyte

Publications (2)

Publication Number Publication Date
WO2003055791A2 WO2003055791A2 (fr) 2003-07-10
WO2003055791A3 true WO2003055791A3 (fr) 2004-03-18

Family

ID=26951373

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2002/029853 Ceased WO2003055791A2 (fr) 2001-10-17 2002-10-11 Procede ameliore de gravure de microstructures

Country Status (1)

Country Link
WO (1) WO2003055791A2 (fr)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
PL2290737T3 (pl) 2003-09-18 2015-10-30 Commw Scient Ind Res Org Urządzenia o wysokiej sprawności do magazynowania energii
US7365016B2 (en) 2004-12-27 2008-04-29 Dalsa Semiconductor Inc. Anhydrous HF release of process for MEMS devices
AR064292A1 (es) 2006-12-12 2009-03-25 Commw Scient Ind Res Org Dispositivo mejorado para almacenamiento de energia
AR067238A1 (es) 2007-03-20 2009-10-07 Commw Scient Ind Res Org Dispositivos optimizados para el almacenamiento de energia
DE102007046498B4 (de) 2007-09-18 2011-08-25 Austriamicrosystems Ag Verfahren zur Herstellung eines mikroelektromechanischen Bauelementes
US9450232B2 (en) 2009-04-23 2016-09-20 Commonwealth Scientific And Industrial Research Organisation Process for producing negative plate for lead storage battery, and lead storage battery
EP2471129B1 (fr) 2009-08-27 2016-11-16 Commonwealth Scientific and Industrial Research Organisation Dispositif de stockage électrique et son électrode
JP5711483B2 (ja) 2009-08-27 2015-04-30 古河電池株式会社 鉛蓄電池用複合キャパシタ負極板の製造法及び鉛蓄電池
JP5797384B2 (ja) 2009-08-27 2015-10-21 古河電池株式会社 鉛蓄電池用複合キャパシタ負極板及び鉛蓄電池
JP2012133959A (ja) 2010-12-21 2012-07-12 Furukawa Battery Co Ltd:The 鉛蓄電池用複合キャパシタ負極板及び鉛蓄電池
GB2487716B (en) 2011-01-24 2015-06-03 Memsstar Ltd Vapour Etch of Silicon Dioxide with Improved Selectivity
ITMO20110095A1 (it) * 2011-05-03 2012-11-04 Acetaia Giuseppe Cremonini S R L Bevanda

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2736934A1 (fr) * 1995-07-21 1997-01-24 Commissariat Energie Atomique Procede de fabrication d'une structure avec une couche utile maintenue a distance d'un substrat par des butees, et de desolidarisation d'une telle couche

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2736934A1 (fr) * 1995-07-21 1997-01-24 Commissariat Energie Atomique Procede de fabrication d'une structure avec une couche utile maintenue a distance d'un substrat par des butees, et de desolidarisation d'une telle couche

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
ALLEY R L ET AL: "The effect of release-etch processing on surface microstructure stiction", SOLID-STATE SENSOR AND ACTUATOR WORKSHOP, 1992. 5TH TECHNICAL DIGEST., IEEE HILTON HEAD ISLAND, SC, USA 22-25 JUNE 1992, NEW YORK, NY, USA,IEEE, US, 22 June 1992 (1992-06-22), pages 202 - 207, XP010056353, ISBN: 0-7803-0456-X *
ANGUITA J ET AL: "HF/H2O vapor etching of SiO2 sacrificial layer for large-area surface-micromachined membranes", SENSORS AND ACTUATORS A, ELSEVIER SEQUOIA S.A., LAUSANNE, CH, vol. 64, no. 3, 31 January 1998 (1998-01-31), pages 247 - 251, XP004116352, ISSN: 0924-4247 *
WON ICK JANG ET AL: "Silicon surface micromachining by anhydrous HF gas-phase etching with methanol", PROCEEDINGS OF THE SPIE, SPIE, BELLINGHAM, VA, US, vol. 3511, 21 September 1998 (1998-09-21), pages 143 - 150, XP009015809, ISSN: 0277-786X *

Also Published As

Publication number Publication date
WO2003055791A2 (fr) 2003-07-10

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