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WO2003090281A3 - Membranes en silicium monocristallin pour applications microelectromecaniques - Google Patents

Membranes en silicium monocristallin pour applications microelectromecaniques Download PDF

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Publication number
WO2003090281A3
WO2003090281A3 PCT/US2003/011720 US0311720W WO03090281A3 WO 2003090281 A3 WO2003090281 A3 WO 2003090281A3 US 0311720 W US0311720 W US 0311720W WO 03090281 A3 WO03090281 A3 WO 03090281A3
Authority
WO
WIPO (PCT)
Prior art keywords
single crystal
substrate
crystal silicon
membrane layer
silicon membranes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2003/011720
Other languages
English (en)
Other versions
WO2003090281A2 (fr
Inventor
Kevin S Jones
Mark E Law
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of Florida
Original Assignee
University of Florida
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University of Florida filed Critical University of Florida
Priority to AU2003221959A priority Critical patent/AU2003221959A1/en
Publication of WO2003090281A2 publication Critical patent/WO2003090281A2/fr
Publication of WO2003090281A3 publication Critical patent/WO2003090281A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
    • B81C1/00158—Diaphragms, membranes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0257—Microphones or microspeakers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/03—Static structures
    • B81B2203/0315—Cavities
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0111—Bulk micromachining
    • B81C2201/0116—Thermal treatment for structural rearrangement of substrate atoms, e.g. for making buried cavities

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Micromachines (AREA)
  • Pressure Sensors (AREA)

Abstract

L'invention concerne un procédé de formation de dispositifs MEMS et des systèmes associés, le procédé consistant à fournir un substrat monocristallin, à attaquer un substrat de manière à y former plusieurs orifices et à recuire le substrat dans une ambiance réductrice à une température équivalant à son point de fusion. Les orifices coalescent dans au moins une couche de la cavité et forment au moins une couche de membrane monocristalline. La couche de membrane confère une densité de dislocation d'au plus 106 dislocations/cm2. Au moins une structure MEMS comprenant au moins une partie mobile est formée sur la couche de membrane. Des dispositifs microélectroniques peuvent également être formés sur le substrat monocristallin. Ledit procédé peut également être utilisé pour la formation de dispositifs MEMS possédant des couches de membrane superposées.
PCT/US2003/011720 2002-04-15 2003-04-15 Membranes en silicium monocristallin pour applications microelectromecaniques Ceased WO2003090281A2 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2003221959A AU2003221959A1 (en) 2002-04-15 2003-04-15 Single crystal silicon membranes for microelectromechanical applications

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US37265102P 2002-04-15 2002-04-15
US60/372,651 2002-04-15

Publications (2)

Publication Number Publication Date
WO2003090281A2 WO2003090281A2 (fr) 2003-10-30
WO2003090281A3 true WO2003090281A3 (fr) 2004-01-08

Family

ID=29250887

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2003/011720 Ceased WO2003090281A2 (fr) 2002-04-15 2003-04-15 Membranes en silicium monocristallin pour applications microelectromecaniques

Country Status (2)

Country Link
AU (1) AU2003221959A1 (fr)
WO (1) WO2003090281A2 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100722686B1 (ko) 2006-05-09 2007-05-30 주식회사 비에스이 부가적인 백 챔버를 갖고 기판에 음향홀이 형성된 실리콘콘덴서 마이크로폰
KR100722687B1 (ko) 2006-05-09 2007-05-30 주식회사 비에스이 부가적인 백 챔버를 갖는 지향성 실리콘 콘덴서 마이크로폰
CN103935953B (zh) 2014-04-25 2016-04-13 上海先进半导体制造股份有限公司 复合腔体及其形成方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5672449A (en) * 1994-08-16 1997-09-30 Ims Ionen Mikrofabrikations Systeme Gmbh Silicon membrane and method of making same
US5963788A (en) * 1995-09-06 1999-10-05 Sandia Corporation Method for integrating microelectromechanical devices with electronic circuitry
US6128961A (en) * 1995-12-24 2000-10-10 Haronian; Dan Micro-electro-mechanics systems (MEMS)
US6355498B1 (en) * 2000-08-11 2002-03-12 Agere Systems Guartian Corp. Thin film resonators fabricated on membranes created by front side releasing

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5672449A (en) * 1994-08-16 1997-09-30 Ims Ionen Mikrofabrikations Systeme Gmbh Silicon membrane and method of making same
US5963788A (en) * 1995-09-06 1999-10-05 Sandia Corporation Method for integrating microelectromechanical devices with electronic circuitry
US6128961A (en) * 1995-12-24 2000-10-10 Haronian; Dan Micro-electro-mechanics systems (MEMS)
US6355498B1 (en) * 2000-08-11 2002-03-12 Agere Systems Guartian Corp. Thin film resonators fabricated on membranes created by front side releasing

Also Published As

Publication number Publication date
AU2003221959A1 (en) 2003-11-03
WO2003090281A2 (fr) 2003-10-30

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