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WO2003055791A2 - Procede ameliore de gravure de microstructures - Google Patents

Procede ameliore de gravure de microstructures Download PDF

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Publication number
WO2003055791A2
WO2003055791A2 PCT/US2002/029853 US0229853W WO03055791A2 WO 2003055791 A2 WO2003055791 A2 WO 2003055791A2 US 0229853 W US0229853 W US 0229853W WO 03055791 A2 WO03055791 A2 WO 03055791A2
Authority
WO
WIPO (PCT)
Prior art keywords
silicon
layer
opening
silicon oxide
oxide layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2002/029853
Other languages
English (en)
Other versions
WO2003055791A3 (fr
Inventor
Jeffrey D. Chinn
Sofiane Soukane
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/265,698 external-priority patent/US7358008B2/en
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of WO2003055791A2 publication Critical patent/WO2003055791A2/fr
Publication of WO2003055791A3 publication Critical patent/WO2003055791A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00912—Treatments or methods for avoiding stiction of flexible or moving parts of MEMS
    • B81C1/0092—For avoiding stiction during the manufacturing process of the device, e.g. during wet etching
    • B81C1/00928—Eliminating or avoiding remaining moisture after the wet etch release of the movable structure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0128—Processes for removing material
    • B81C2201/013—Etching
    • B81C2201/0132—Dry etching, i.e. plasma etching, barrel etching, reactive ion etching [RIE], sputter etching or ion milling

Definitions

  • This invention relates to a method of releasing
  • microelectromechanical devices from a substrate using a
  • this invention relates to a method of releasing silicon-containing devices using a two-
  • MEMS Microelectromechanical systems
  • Compliant silicon-containing microstructures are provided.
  • silicon oxide layer is etched to separate at least a portion
  • FIG. 1 A simple MEMS device is shown in Fig. 1.
  • the etchant of choice heretofore for isotropically etching silicon oxide is aqueous hydrogen fluoride (HF) .
  • An alternative etch is anhydrous HF, which does not leave
  • moisture from a microstructure causes as many problems as it
  • the processing chambers as well as the substrate to be etched.
  • the amount of water present can vary depending on the
  • silicon oxides which are hygroscopic, absorb water from the
  • Dense silicon oxides such as thermal,
  • the silicon fluoride compound can decompose to form either
  • a mass flow controller regulated the flow
  • Polysilicon cantilevers having a thickness of 2 microns, a width of 10
  • microns a length of 1000 microns and a gap between the
  • the process of the invention comprises two steps that can
  • the first step uses a gaseous HF-H 2 0 etchant mixture to
  • timing for this first step is chosen to be such that the amount of etching is limited to that length of a
  • a second solvent or drying agent is
  • solvent also must be able to dissolve the residue produced by the etching reaction, thereby preventing future stiction
  • Fig. 1 is a cross sectional view of a simple MEM device.
  • Fig. 2 is a cross sectional view of a simple trilayer
  • Fig. 3 is a cross sectional view of a substrate after
  • Fig. 4 is a cross sectional view of a substrate
  • Fig. 5 is a cross sectional view of a partially released substrate after performing step 2 of the present process .
  • Fig. 6 is a schematic cross sectional view of a chamber
  • Figs. 2-5 illustrate the steps of the present process.
  • MEM device comprising a sacrificial silicon oxide
  • Suitable silicon-containing materials can include polysilicon, crystalline silicon, doped silicon, a silicon wafer, and the like.
  • the two layers 24 and 26 can be the same or different.
  • silicon oxides on a silicon-containing substrate For example, silicon
  • oxide can be deposited by chemical vapor deposition (CVD) ; by
  • PECVD plasma-enhanced chemical vapor deposition
  • LPCVD chemical vapor deposition
  • silicon oxides can be deposited from silane or
  • the silicon oxides can be variously doped
  • Typical useful silicon oxides include
  • PSG phosphosilicate glass
  • BPSG borophosphosilicate glass
  • TEOS tetraethoxysilane
  • dopants such as boron and phosphorus
  • the oxide layer 22 is partially etched away with a water-HF
  • HF of water 1-10% by weight of HF of water can be added, preferably from
  • a drying agent is added to the etchant.
  • drying agents are polar solvents, and include methanol,
  • drying agent is added both to remove or substitute for the
  • the polar drying agent dissolves and removes the residue
  • drying agent acts to dissolve the residue
  • Fig. 5 is a cross sectional view of the substrate at the
  • the oxide layer 22 is thus
  • one or more gases such as oxygen, ammonia, nitrogen
  • precursor gases can be used to clean or ash residues that
  • 650 and 652 supply various etch and reaction gases to the chamber 624 through lines 634 and 635 using valves 626a, 628a,
  • the chamber 624 includes a mount 636 for the substrate to
  • the mount 636 is connected to a temperature
  • control means 639 which can be a resistance heater as shown,
  • temperature control means 639 can also be an array of lamps,
  • the chamber 624 is suitably maintained at about room temperature during the etch. However,
  • the temperature can be elevated somewhat to ensure that
  • the drying agent should remain in the liquid phase to dissolve
  • An exhaust line 640 maintains a suitable pressure in the
  • nickel can be applied to those lines and surfaces that come in
  • the chamber 624 is also capable of depositing a
  • passivation layer over the etched feature to protect it and to
  • processing equipment can be substituted, as will be known to

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Micromachines (AREA)
  • Weting (AREA)

Abstract

L'invention concerne un procédé en deux étapes permettant de libérer des dispositifs micro-électro-mécaniques d'un substrat. La première étape de ce procédé consiste à graver de manière isotropique une couche d'oxyde de silicium prise en sandwich entre deux couches contenant du silicium, au moyen d'un mélange eau-fluorure d'hydrogène gazeux, ainsi que la couche de silicium sus-jacente à séparer de la couche de silicium sous-jacente ou du substrat pendant une période suffisante pour former une ouverture sans libérer la couche sous-jacente. La deuxième étape consiste à ajouter un desséchant pour qu'il se substitue à l'humidité restant dans l'ouverture et qu'il dissolve les résidus contenus dans ladite ouverture, pouvant provoquer la striction.
PCT/US2002/029853 2001-10-17 2002-10-11 Procede ameliore de gravure de microstructures Ceased WO2003055791A2 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US34449701P 2001-10-17 2001-10-17
US60/344,497 2001-10-17
US10/265,698 2002-10-08
US10/265,698 US7358008B2 (en) 2001-10-12 2002-10-08 Electrochemical device including electrolyte

Publications (2)

Publication Number Publication Date
WO2003055791A2 true WO2003055791A2 (fr) 2003-07-10
WO2003055791A3 WO2003055791A3 (fr) 2004-03-18

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2002/029853 Ceased WO2003055791A2 (fr) 2001-10-17 2002-10-11 Procede ameliore de gravure de microstructures

Country Status (1)

Country Link
WO (1) WO2003055791A2 (fr)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1700822A2 (fr) 2004-12-27 2006-09-13 DALSA Semiconductor Inc. Procédé de dégagement avec acide fluoridrique anhydre pour dispositifs MEMS
DE102007046498A1 (de) 2007-09-18 2009-04-02 Austriamicrosystems Ag Mikroelektromechanisches Bauelement und Herstellungsverfahren
US7923151B2 (en) 2003-09-18 2011-04-12 Commonwealth Scientific And Industrial Research Organisation High performance energy storage devices
GB2487716A (en) * 2011-01-24 2012-08-08 Memsstar Ltd Vapour Etch of Silicon Dioxide with Improved Selectivity in MEMS structures
CN103547176A (zh) * 2011-05-03 2014-01-29 阿瑟塔纳红酒醋公司 饮品
US9203116B2 (en) 2006-12-12 2015-12-01 Commonwealth Scientific And Industrial Research Organisation Energy storage device
US9401508B2 (en) 2009-08-27 2016-07-26 Commonwealth Scientific And Industrial Research Organisation Electrical storage device and electrode thereof
US9450232B2 (en) 2009-04-23 2016-09-20 Commonwealth Scientific And Industrial Research Organisation Process for producing negative plate for lead storage battery, and lead storage battery
US9508493B2 (en) 2009-08-27 2016-11-29 The Furukawa Battery Co., Ltd. Hybrid negative plate for lead-acid storage battery and lead-acid storage battery
US9524831B2 (en) 2009-08-27 2016-12-20 The Furukawa Battery Co., Ltd. Method for producing hybrid negative plate for lead-acid storage battery and lead-acid storage battery
US9666860B2 (en) 2007-03-20 2017-05-30 Commonwealth Scientific And Industrial Research Organisation Optimised energy storage device having capacitor material on lead based negative electrode
US9812703B2 (en) 2010-12-21 2017-11-07 Commonwealth Scientific And Industrial Research Organisation Electrode and electrical storage device for lead-acid system

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2736934B1 (fr) * 1995-07-21 1997-08-22 Commissariat Energie Atomique Procede de fabrication d'une structure avec une couche utile maintenue a distance d'un substrat par des butees, et de desolidarisation d'une telle couche

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7923151B2 (en) 2003-09-18 2011-04-12 Commonwealth Scientific And Industrial Research Organisation High performance energy storage devices
US8232006B2 (en) 2003-09-18 2012-07-31 Commonwealth Scientific And Industrial Research Organisation High performance energy storage devices
EP1700822A3 (fr) * 2004-12-27 2007-11-21 DALSA Semiconductor Inc. Procédé de dégagement avec acide fluoridrique anhydre pour dispositifs MEMS
US7365016B2 (en) 2004-12-27 2008-04-29 Dalsa Semiconductor Inc. Anhydrous HF release of process for MEMS devices
EP1700822A2 (fr) 2004-12-27 2006-09-13 DALSA Semiconductor Inc. Procédé de dégagement avec acide fluoridrique anhydre pour dispositifs MEMS
US9203116B2 (en) 2006-12-12 2015-12-01 Commonwealth Scientific And Industrial Research Organisation Energy storage device
US9666860B2 (en) 2007-03-20 2017-05-30 Commonwealth Scientific And Industrial Research Organisation Optimised energy storage device having capacitor material on lead based negative electrode
DE102007046498A1 (de) 2007-09-18 2009-04-02 Austriamicrosystems Ag Mikroelektromechanisches Bauelement und Herstellungsverfahren
DE102007046498B4 (de) * 2007-09-18 2011-08-25 Austriamicrosystems Ag Verfahren zur Herstellung eines mikroelektromechanischen Bauelementes
US9450232B2 (en) 2009-04-23 2016-09-20 Commonwealth Scientific And Industrial Research Organisation Process for producing negative plate for lead storage battery, and lead storage battery
US9401508B2 (en) 2009-08-27 2016-07-26 Commonwealth Scientific And Industrial Research Organisation Electrical storage device and electrode thereof
US9508493B2 (en) 2009-08-27 2016-11-29 The Furukawa Battery Co., Ltd. Hybrid negative plate for lead-acid storage battery and lead-acid storage battery
US9524831B2 (en) 2009-08-27 2016-12-20 The Furukawa Battery Co., Ltd. Method for producing hybrid negative plate for lead-acid storage battery and lead-acid storage battery
US9812703B2 (en) 2010-12-21 2017-11-07 Commonwealth Scientific And Industrial Research Organisation Electrode and electrical storage device for lead-acid system
GB2487716B (en) * 2011-01-24 2015-06-03 Memsstar Ltd Vapour Etch of Silicon Dioxide with Improved Selectivity
GB2487716A (en) * 2011-01-24 2012-08-08 Memsstar Ltd Vapour Etch of Silicon Dioxide with Improved Selectivity in MEMS structures
US10354884B2 (en) 2011-01-24 2019-07-16 Memsstar Limited Vapour etch of silicon dioxide with improved selectivity
CN103547176A (zh) * 2011-05-03 2014-01-29 阿瑟塔纳红酒醋公司 饮品

Also Published As

Publication number Publication date
WO2003055791A3 (fr) 2004-03-18

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