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WO2002013335A3 - Laser accordable en semi-conducteur a emission par la tranche - Google Patents

Laser accordable en semi-conducteur a emission par la tranche Download PDF

Info

Publication number
WO2002013335A3
WO2002013335A3 PCT/FR2001/002530 FR0102530W WO0213335A3 WO 2002013335 A3 WO2002013335 A3 WO 2002013335A3 FR 0102530 W FR0102530 W FR 0102530W WO 0213335 A3 WO0213335 A3 WO 0213335A3
Authority
WO
WIPO (PCT)
Prior art keywords
edge
emitting semiconductor
tunable laser
semiconductor tunable
length
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/FR2001/002530
Other languages
English (en)
Other versions
WO2002013335A2 (fr
Inventor
Joel Jacquet
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Alcatel Lucent SAS
Nokia Inc
Original Assignee
Alcatel SA
Nokia Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Alcatel SA, Nokia Inc filed Critical Alcatel SA
Priority to JP2002518583A priority Critical patent/JP2004506334A/ja
Priority to EP01963053A priority patent/EP1307955A2/fr
Priority to US10/089,569 priority patent/US6865195B2/en
Publication of WO2002013335A2 publication Critical patent/WO2002013335A2/fr
Publication of WO2002013335A3 publication Critical patent/WO2002013335A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/105—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the mutual position or the reflecting properties of the reflectors of the cavity, e.g. by controlling the cavity length
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H01S5/0203—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1039—Details on the cavity length
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/125—Distributed Bragg reflector [DBR] lasers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

L'invention concerne un laser accordable (10) en semi-conducteur à émission par la tranche comportant une cavité résonante délimitée par deux réflecteurs (15, 20) dont un est fixe (15) et l'autre mobile (20), ladite cavité étant composée d'une première section (1) active à gain d'une longueur L1 et d'une deuxième section (2) de longueur L2 accordable, caractérisé en ce que la longueur totale de la cavité L= L1+L2 est inférieure ou égale à 20 νm.
PCT/FR2001/002530 2000-08-04 2001-08-02 Laser accordable en semi-conducteur a emission par la tranche Ceased WO2002013335A2 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2002518583A JP2004506334A (ja) 2000-08-04 2001-08-02 エッジ発光同調可能半導体レーザ
EP01963053A EP1307955A2 (fr) 2000-08-04 2001-08-02 Laser accordable en semi-conducteur a emission par la tranche
US10/089,569 US6865195B2 (en) 2000-08-04 2001-08-02 Edge-emitting semiconductor tunable laser

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR00/10366 2000-08-04
FR0010366A FR2812769B1 (fr) 2000-08-04 2000-08-04 Laser accordable en semi-conducteur a emission par la tranche

Publications (2)

Publication Number Publication Date
WO2002013335A2 WO2002013335A2 (fr) 2002-02-14
WO2002013335A3 true WO2002013335A3 (fr) 2002-05-02

Family

ID=8853346

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/FR2001/002530 Ceased WO2002013335A2 (fr) 2000-08-04 2001-08-02 Laser accordable en semi-conducteur a emission par la tranche

Country Status (5)

Country Link
US (1) US6865195B2 (fr)
EP (1) EP1307955A2 (fr)
JP (1) JP2004506334A (fr)
FR (1) FR2812769B1 (fr)
WO (1) WO2002013335A2 (fr)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050249256A1 (en) * 2004-05-10 2005-11-10 Lightip Technologies Inc. Wavelength switchable semiconductor laser
US7244936B2 (en) * 2004-12-10 2007-07-17 American Air Liquide, Inc. Chemical species detection including a multisection laser for improved process monitoring
US20060243463A1 (en) * 2005-04-29 2006-11-02 Mensch Donald L Rotatable implement with end-mounted motor
CA2521731A1 (fr) * 2005-05-09 2006-11-09 Jian-Jun He Laser a semi-conducteurs a commutation en longueur d'onde
US7457033B2 (en) * 2005-05-27 2008-11-25 The Regents Of The University Of California MEMS tunable vertical-cavity semiconductor optical amplifier
US7903099B2 (en) * 2005-06-20 2011-03-08 Google Inc. Allocating advertising space in a network of displays
DE102007048659A1 (de) * 2007-10-10 2009-04-16 Continental Automotive Gmbh Energiespeicher
EP2782196B1 (fr) * 2011-11-16 2018-06-13 Mitsubishi Electric Corporation Laser à l'état solide à excitation par laser à semi-conducteur

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4839308A (en) * 1986-07-21 1989-06-13 Gte Laboratories Incorporated Method of making an external-coupled-cavity diode laser
US5363397A (en) * 1992-10-29 1994-11-08 Internatioal Business Machines Corporation Integrated short cavity laser with bragg mirrors
JPH09260768A (ja) * 1996-03-19 1997-10-03 Nippon Telegr & Teleph Corp <Ntt> 半導体レーザ装置

Family Cites Families (20)

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Publication number Priority date Publication date Assignee Title
JPS63213389A (ja) * 1987-02-27 1988-09-06 Sharp Corp 半導体レ−ザ装置
US4786132A (en) * 1987-03-31 1988-11-22 Lytel Corporation Hybrid distributed bragg reflector laser
EP0308603A1 (fr) * 1987-09-25 1989-03-29 Siemens Aktiengesellschaft Emetteur de laser dynamique monomode
FR2639773B1 (fr) * 1988-11-25 1994-05-13 Alcatel Nv Laser a semi-conducteur accordable
IL113536A (en) * 1990-06-06 1998-12-27 Kol Ohr Corp Continuously adjustable laser
US5572543A (en) * 1992-04-09 1996-11-05 Deutsch Aerospace Ag Laser system with a micro-mechanically moved mirror
JP3196791B2 (ja) * 1992-12-16 2001-08-06 日本電信電話株式会社 波長可変半導体発光装置
US5384799A (en) * 1993-09-09 1995-01-24 Martin Marietta Corporation Frequency stabilized laser with electronic tunable external cavity
US5521932A (en) * 1994-05-03 1996-05-28 Light Solutions Corporation Scalable side-pumped solid-state laser
US5835650A (en) * 1995-11-16 1998-11-10 Matsushita Electric Industrial Co., Ltd. Optical apparatus and method for producing the same
US5960259A (en) * 1995-11-16 1999-09-28 Matsushita Electric Industrial Co., Ltd. Optical apparatus and method for producing the same
US6021141A (en) * 1996-03-29 2000-02-01 Sdl, Inc. Tunable blue laser diode
US6201629B1 (en) * 1997-08-27 2001-03-13 Microoptical Corporation Torsional micro-mechanical mirror system
US6327289B1 (en) * 1997-09-02 2001-12-04 Matsushita Electric Industrial Co., Ltd. Wavelength-variable semiconductor laser, optical integrated device utilizing the same, and production method thereof
AU9472298A (en) * 1997-09-05 1999-03-22 Micron Optics, Inc. Tunable fiber fabry-perot surface-emitting lasers
US6201638B1 (en) * 1998-01-23 2001-03-13 University Technology Corporation Comb generating optical cavity that includes an optical amplifier and an optical modulator
FI116753B (fi) * 1998-04-17 2006-02-15 Valtion Teknillinen Aallonpituudeltaan säädettävä laserjärjestely
JP2000114655A (ja) * 1998-09-30 2000-04-21 Toshiba Corp サブマウントミラー方式面型レーザ
JP3091448B2 (ja) * 1999-01-13 2000-09-25 松下電子工業株式会社 光半導体装置
JP3934828B2 (ja) * 1999-06-30 2007-06-20 株式会社東芝 半導体レーザ装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4839308A (en) * 1986-07-21 1989-06-13 Gte Laboratories Incorporated Method of making an external-coupled-cavity diode laser
US5363397A (en) * 1992-10-29 1994-11-08 Internatioal Business Machines Corporation Integrated short cavity laser with bragg mirrors
JPH09260768A (ja) * 1996-03-19 1997-10-03 Nippon Telegr & Teleph Corp <Ntt> 半導体レーザ装置

Non-Patent Citations (5)

* Cited by examiner, † Cited by third party
Title
"EMBEDDED SEMICONDUCTOR LASER WITH ANTI-REFLECTION COATINGS", IBM TECHNICAL DISCLOSURE BULLETIN,US,IBM CORP. NEW YORK, vol. 34, no. 5, 1 October 1991 (1991-10-01), pages 141 - 142, XP000189657, ISSN: 0018-8689 *
BABA T ET AL: "A NOVEL SHORT-CAVITY LASER WITH DEEP-GRATING DISTRIBUTED BRAGG REFLECTORS", JAPANESE JOURNAL OF APPLIED PHYSICS,PUBLICATION OFFICE JAPANESE JOURNAL OF APPLIED PHYSICS. TOKYO,JP, vol. 35, no. 2B, 1 February 1996 (1996-02-01), pages 1390 - 1394, XP000701047, ISSN: 0021-4922 *
HOEFLING E ET AL: "EDGE-EMITTING GAINAS-A1GAAS MICROLASERS", IEEE PHOTONICS TECHNOLOGY LETTERS,IEEE INC. NEW YORK,US, vol. 11, no. 8, August 1999 (1999-08-01), pages 943 - 945, XP000860958, ISSN: 1041-1135 *
PATENT ABSTRACTS OF JAPAN vol. 1998, no. 02 30 January 1998 (1998-01-30) *
UENISHI Y ET AL: "TUNABLE LASER DIODE USING A NICKEL MICROMACHINED EXTERNAL MIRROR", ELECTRONICS LETTERS,IEE STEVENAGE,GB, vol. 32, no. 13, 20 June 1996 (1996-06-20), pages 1207 - 1208, XP000965745, ISSN: 0013-5194 *

Also Published As

Publication number Publication date
US20020151126A1 (en) 2002-10-17
US6865195B2 (en) 2005-03-08
JP2004506334A (ja) 2004-02-26
EP1307955A2 (fr) 2003-05-07
WO2002013335A2 (fr) 2002-02-14
FR2812769B1 (fr) 2003-08-29
FR2812769A1 (fr) 2002-02-08

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