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FR2812769B1 - Laser accordable en semi-conducteur a emission par la tranche - Google Patents

Laser accordable en semi-conducteur a emission par la tranche

Info

Publication number
FR2812769B1
FR2812769B1 FR0010366A FR0010366A FR2812769B1 FR 2812769 B1 FR2812769 B1 FR 2812769B1 FR 0010366 A FR0010366 A FR 0010366A FR 0010366 A FR0010366 A FR 0010366A FR 2812769 B1 FR2812769 B1 FR 2812769B1
Authority
FR
France
Prior art keywords
semiconductor laser
tunable semiconductor
wafer emission
wafer
emission
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0010366A
Other languages
English (en)
Other versions
FR2812769A1 (fr
Inventor
Joel Jacquet
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Alcatel Lucent SAS
Nokia Inc
Original Assignee
Alcatel SA
Nokia Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Alcatel SA, Nokia Inc filed Critical Alcatel SA
Priority to FR0010366A priority Critical patent/FR2812769B1/fr
Priority to JP2002518583A priority patent/JP2004506334A/ja
Priority to EP01963053A priority patent/EP1307955A2/fr
Priority to US10/089,569 priority patent/US6865195B2/en
Priority to PCT/FR2001/002530 priority patent/WO2002013335A2/fr
Publication of FR2812769A1 publication Critical patent/FR2812769A1/fr
Application granted granted Critical
Publication of FR2812769B1 publication Critical patent/FR2812769B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/105—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the mutual position or the reflecting properties of the reflectors of the cavity, e.g. by controlling the cavity length
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H01S5/0203—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1039—Details on the cavity length
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/125—Distributed Bragg reflector [DBR] lasers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
FR0010366A 2000-08-04 2000-08-04 Laser accordable en semi-conducteur a emission par la tranche Expired - Fee Related FR2812769B1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR0010366A FR2812769B1 (fr) 2000-08-04 2000-08-04 Laser accordable en semi-conducteur a emission par la tranche
JP2002518583A JP2004506334A (ja) 2000-08-04 2001-08-02 エッジ発光同調可能半導体レーザ
EP01963053A EP1307955A2 (fr) 2000-08-04 2001-08-02 Laser accordable en semi-conducteur a emission par la tranche
US10/089,569 US6865195B2 (en) 2000-08-04 2001-08-02 Edge-emitting semiconductor tunable laser
PCT/FR2001/002530 WO2002013335A2 (fr) 2000-08-04 2001-08-02 Laser accordable en semi-conducteur a emission par la tranche

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0010366A FR2812769B1 (fr) 2000-08-04 2000-08-04 Laser accordable en semi-conducteur a emission par la tranche

Publications (2)

Publication Number Publication Date
FR2812769A1 FR2812769A1 (fr) 2002-02-08
FR2812769B1 true FR2812769B1 (fr) 2003-08-29

Family

ID=8853346

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0010366A Expired - Fee Related FR2812769B1 (fr) 2000-08-04 2000-08-04 Laser accordable en semi-conducteur a emission par la tranche

Country Status (5)

Country Link
US (1) US6865195B2 (fr)
EP (1) EP1307955A2 (fr)
JP (1) JP2004506334A (fr)
FR (1) FR2812769B1 (fr)
WO (1) WO2002013335A2 (fr)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050249256A1 (en) * 2004-05-10 2005-11-10 Lightip Technologies Inc. Wavelength switchable semiconductor laser
US7244936B2 (en) * 2004-12-10 2007-07-17 American Air Liquide, Inc. Chemical species detection including a multisection laser for improved process monitoring
US20060243463A1 (en) * 2005-04-29 2006-11-02 Mensch Donald L Rotatable implement with end-mounted motor
CA2521731A1 (fr) * 2005-05-09 2006-11-09 Jian-Jun He Laser a semi-conducteurs a commutation en longueur d'onde
US7457033B2 (en) * 2005-05-27 2008-11-25 The Regents Of The University Of California MEMS tunable vertical-cavity semiconductor optical amplifier
US7903099B2 (en) * 2005-06-20 2011-03-08 Google Inc. Allocating advertising space in a network of displays
DE102007048659A1 (de) * 2007-10-10 2009-04-16 Continental Automotive Gmbh Energiespeicher
WO2013073024A1 (fr) * 2011-11-16 2013-05-23 三菱電機株式会社 Laser à l'état solide à excitation de laser à semi-conducteur

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4839308A (en) * 1986-07-21 1989-06-13 Gte Laboratories Incorporated Method of making an external-coupled-cavity diode laser
JPS63213389A (ja) * 1987-02-27 1988-09-06 Sharp Corp 半導体レ−ザ装置
US4786132A (en) * 1987-03-31 1988-11-22 Lytel Corporation Hybrid distributed bragg reflector laser
EP0308603A1 (fr) * 1987-09-25 1989-03-29 Siemens Aktiengesellschaft Emetteur de laser dynamique monomode
FR2639773B1 (fr) * 1988-11-25 1994-05-13 Alcatel Nv Laser a semi-conducteur accordable
US6025939A (en) * 1990-06-06 2000-02-15 Kol Ohr Corporation Continuously tunable laser
US5572543A (en) * 1992-04-09 1996-11-05 Deutsch Aerospace Ag Laser system with a micro-mechanically moved mirror
US5363397A (en) * 1992-10-29 1994-11-08 Internatioal Business Machines Corporation Integrated short cavity laser with bragg mirrors
JP3196791B2 (ja) * 1992-12-16 2001-08-06 日本電信電話株式会社 波長可変半導体発光装置
US5384799A (en) * 1993-09-09 1995-01-24 Martin Marietta Corporation Frequency stabilized laser with electronic tunable external cavity
US5521932A (en) * 1994-05-03 1996-05-28 Light Solutions Corporation Scalable side-pumped solid-state laser
US5960259A (en) * 1995-11-16 1999-09-28 Matsushita Electric Industrial Co., Ltd. Optical apparatus and method for producing the same
EP0774684A3 (fr) * 1995-11-16 1998-04-22 Matsushita Electric Industrial Co., Ltd. Dispositif optique et méthode de fabrication
JP3356255B2 (ja) * 1996-03-19 2002-12-16 日本電信電話株式会社 半導体レーザ装置
US6021141A (en) * 1996-03-29 2000-02-01 Sdl, Inc. Tunable blue laser diode
US6201629B1 (en) * 1997-08-27 2001-03-13 Microoptical Corporation Torsional micro-mechanical mirror system
US6327289B1 (en) * 1997-09-02 2001-12-04 Matsushita Electric Industrial Co., Ltd. Wavelength-variable semiconductor laser, optical integrated device utilizing the same, and production method thereof
US6263002B1 (en) * 1997-09-05 2001-07-17 Micron Optics, Inc. Tunable fiber Fabry-Perot surface-emitting lasers
US6201638B1 (en) * 1998-01-23 2001-03-13 University Technology Corporation Comb generating optical cavity that includes an optical amplifier and an optical modulator
FI116753B (fi) * 1998-04-17 2006-02-15 Valtion Teknillinen Aallonpituudeltaan säädettävä laserjärjestely
JP2000114655A (ja) * 1998-09-30 2000-04-21 Toshiba Corp サブマウントミラー方式面型レーザ
JP3091448B2 (ja) * 1999-01-13 2000-09-25 松下電子工業株式会社 光半導体装置
JP3934828B2 (ja) * 1999-06-30 2007-06-20 株式会社東芝 半導体レーザ装置

Also Published As

Publication number Publication date
FR2812769A1 (fr) 2002-02-08
US6865195B2 (en) 2005-03-08
US20020151126A1 (en) 2002-10-17
EP1307955A2 (fr) 2003-05-07
JP2004506334A (ja) 2004-02-26
WO2002013335A3 (fr) 2002-05-02
WO2002013335A2 (fr) 2002-02-14

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Legal Events

Date Code Title Description
ST Notification of lapse