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AU2001288727A1 - Integrated grating-outcoupled surface-emitting lasers - Google Patents

Integrated grating-outcoupled surface-emitting lasers

Info

Publication number
AU2001288727A1
AU2001288727A1 AU2001288727A AU8872701A AU2001288727A1 AU 2001288727 A1 AU2001288727 A1 AU 2001288727A1 AU 2001288727 A AU2001288727 A AU 2001288727A AU 8872701 A AU8872701 A AU 8872701A AU 2001288727 A1 AU2001288727 A1 AU 2001288727A1
Authority
AU
Australia
Prior art keywords
emitting lasers
integrated grating
outcoupled surface
outcoupled
grating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001288727A
Inventor
Gary A. Evans
Jay B. Kirk
John Mattis
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Photodigm Inc
Original Assignee
Photodigm Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Photodigm Inc filed Critical Photodigm Inc
Publication of AU2001288727A1 publication Critical patent/AU2001288727A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/185—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
    • H01S5/187—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL] using Bragg reflection
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
    • H01S5/106—Comprising an active region having a varying composition or cross-section in a specific direction varying thickness along the optical axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2077—Methods of obtaining the confinement using lateral bandgap control during growth, e.g. selective growth, mask induced
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4056—Edge-emitting structures emitting light in more than one direction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42—Arrays of surface emitting lasers

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)
AU2001288727A 2000-09-01 2001-09-04 Integrated grating-outcoupled surface-emitting lasers Abandoned AU2001288727A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US23053400P 2000-09-01 2000-09-01
US60230534 2000-09-01
PCT/US2001/027473 WO2002019481A1 (en) 2000-09-01 2001-09-04 Integrated grating-outcoupled surface-emitting lasers

Publications (1)

Publication Number Publication Date
AU2001288727A1 true AU2001288727A1 (en) 2002-03-13

Family

ID=22865580

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001288727A Abandoned AU2001288727A1 (en) 2000-09-01 2001-09-04 Integrated grating-outcoupled surface-emitting lasers

Country Status (3)

Country Link
US (2) US6661825B2 (en)
AU (1) AU2001288727A1 (en)
WO (1) WO2002019481A1 (en)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10111501B4 (en) * 2001-03-09 2019-03-21 Osram Opto Semiconductors Gmbh Radiation-emitting semiconductor component and method for its production
US6788847B2 (en) * 2001-04-05 2004-09-07 Luxtera, Inc. Photonic input/output port
US7295589B2 (en) * 2003-02-15 2007-11-13 Avago Technologies Fiber (Singapore) Pte Ltd Frequency modulated vertical cavity laser
US7339964B2 (en) * 2003-02-24 2008-03-04 Quintessence Photonics Corp. Laser diode with phase matching grating
US7489836B2 (en) * 2003-03-17 2009-02-10 Intel Corporation Optical interconnect system for high speed microprocessor input/output (IO)
JP2005150472A (en) * 2003-11-17 2005-06-09 Alps Electric Co Ltd Variable-wavelength light source and method for manufacturing the same
US7366368B2 (en) * 2004-06-15 2008-04-29 Intel Corporation Optical add/drop interconnect bus for multiprocessor architecture
US7313159B2 (en) * 2004-12-23 2007-12-25 Photodigm, Inc. Apparatus and method for providing a single-mode grating-outcoupled surface emitting laser with detuned second-order outcoupler grating
US7983572B2 (en) * 2005-06-30 2011-07-19 Finisar Corporation Electro-absorption modulator integrated with a vertical cavity surface emitting laser
US7912106B2 (en) * 2007-12-05 2011-03-22 International Business Machines Corporation Enhanced surface-emitting photonic device
US20090168820A1 (en) * 2007-12-28 2009-07-02 Martin Achtenhagen Mitigated Temperature Gradient-Distributed Bragg Reflector
FI20085935A0 (en) * 2008-10-03 2008-10-03 Wallac Oy Method and apparatus for detecting undesirable measurement conditions
DE102009034163A1 (en) * 2009-07-22 2011-02-03 Ulrich Lohmann Parallel light bus system for spatial distribution of optical information signals on optical printed circuit board, has planar light-conducting space for transmitting optical information signals between electronic board layers
RU2477915C1 (en) * 2011-08-10 2013-03-20 Общество с ограниченной ответственностью "Нанооптик Девайсез" Method of making high radiation brightness laser diode
US11061099B2 (en) 2018-09-18 2021-07-13 Keysight Technologies, Inc. Systems and methods for calibrating a wafer inspection apparatus
CN114389143B (en) * 2020-10-20 2023-12-29 中国科学院半导体研究所 Coherence-tunable semiconductor laser and application
CN112993751B (en) * 2021-01-28 2022-08-19 湖北光安伦芯片有限公司 Nano-column VCSEL light source structure and preparation method thereof
EP4198586B1 (en) 2021-12-20 2025-11-19 IMEC vzw Multilevel coupling for phase front engineering
WO2024100148A2 (en) * 2022-11-10 2024-05-16 Ams-Osram International Gmbh Light-emitting diode comprising an ordered photonic structure

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5111467A (en) 1990-09-10 1992-05-05 Tacan Corporation Hybrid rugate filter assembly for temperature stabilized emission of grating coupled surface emitting lasers
US5131001A (en) * 1990-12-21 1992-07-14 David Sarnoff Research Center, Inc. Monolithic semiconductor light emitter and amplifier
US5164956A (en) * 1991-10-21 1992-11-17 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Multiperiod-grating surface-emitting lasers
US5283447A (en) * 1992-01-21 1994-02-01 Bandgap Technology Corporation Integration of transistors with vertical cavity surface emitting lasers
US6246708B1 (en) 1997-08-27 2001-06-12 Xerox Corporation Semiconductor laser with associated electronic components integrally formed therewith
US6459715B1 (en) * 1999-05-10 2002-10-01 Princeton Lightwave, Inc. Master-oscillator grating coupled power amplifier with angled amplifier section
US6477285B1 (en) * 2000-06-30 2002-11-05 Motorola, Inc. Integrated circuits with optical signal propagation
US6585424B2 (en) * 2001-07-25 2003-07-01 Motorola, Inc. Structure and method for fabricating an electro-rheological lens

Also Published As

Publication number Publication date
US6661825B2 (en) 2003-12-09
WO2002019481A1 (en) 2002-03-07
US20020086454A1 (en) 2002-07-04
US20030133486A1 (en) 2003-07-17
US6853666B2 (en) 2005-02-08

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