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WO1997008356A3 - Modified metalorganic chemical vapor deposition of group III-V thin layers - Google Patents

Modified metalorganic chemical vapor deposition of group III-V thin layers Download PDF

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Publication number
WO1997008356A3
WO1997008356A3 PCT/US1996/013188 US9613188W WO9708356A3 WO 1997008356 A3 WO1997008356 A3 WO 1997008356A3 US 9613188 W US9613188 W US 9613188W WO 9708356 A3 WO9708356 A3 WO 9708356A3
Authority
WO
WIPO (PCT)
Prior art keywords
reactor
films
susceptor
modified
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US1996/013188
Other languages
French (fr)
Other versions
WO1997008356A2 (en
Inventor
Steven P Denbaars
Bernd P Keller
Stacia Keller
David J Kapolnek
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of California Berkeley
University of California San Diego UCSD
Original Assignee
University of California Berkeley
University of California San Diego UCSD
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University of California Berkeley, University of California San Diego UCSD filed Critical University of California Berkeley
Publication of WO1997008356A2 publication Critical patent/WO1997008356A2/en
Publication of WO1997008356A3 publication Critical patent/WO1997008356A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C23C16/303—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)

Abstract

An improved MOCVD apparatus (10) comprising an infrared transparent reactor (11) comprised of quartz or other material capable of withstanding pressures between about 1 and 10,000 torr. and a temperature between about 0 and 1500 degrees C. The reactor has an inlet port (12) for at least one volatile metalorganic compound, an inlet port (12) for a nitrogen containing gas, an outlet port (13), and a reaction zone (17) for growing a metal III nitride layer on a substrate (20) held by a susceptor (14). An infrared radiation source (18) is positioned immediately outside the reactor (11) for irradiating the growth surface (22) of the substrate (20), and a radiant heat source (21) is provided to heat the susceptor (14). The apparatus (10) produces films with useful properties by providing better control of nitride thin film formation, and is amenable to mechanization for less expensive mass production of films. The films are useful as semiconductors including LED devices.
PCT/US1996/013188 1995-08-18 1996-08-16 Modified metalorganic chemical vapor deposition of group iii-v thin layers Ceased WO1997008356A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US51652795A 1995-08-18 1995-08-18
US08/516,527 1995-08-18

Publications (2)

Publication Number Publication Date
WO1997008356A2 WO1997008356A2 (en) 1997-03-06
WO1997008356A3 true WO1997008356A3 (en) 1997-04-24

Family

ID=24055979

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US1996/013188 Ceased WO1997008356A2 (en) 1995-08-18 1996-08-16 Modified metalorganic chemical vapor deposition of group iii-v thin layers

Country Status (1)

Country Link
WO (1) WO1997008356A2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9196800B2 (en) 1996-06-26 2015-11-24 Osram Gmbh Light-radiating semiconductor component with a luminescence conversion element

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW405272B (en) * 1997-06-25 2000-09-11 Sony Corp Method and apparatus for growth of a nitride III-V compound semiconductor
DE19855637A1 (en) 1998-12-02 2000-06-15 Aixtron Ag Process and system for semiconductor crystal production with temperature management
EP1113485A3 (en) 1999-12-27 2005-08-31 Matsushita Electric Industrial Co., Ltd. Method for producing a semiconductor device
US6841406B2 (en) * 2001-11-06 2005-01-11 Edward Brittain Stokes Methods and apparatus for a semiconductor device
AU2003217530A1 (en) * 2002-04-01 2003-10-13 Ans Inc Apparatus and method for depositing organic matter of vapor phase
DE10325629A1 (en) * 2003-03-21 2004-10-07 Forschungszentrum Jülich GmbH Process for the deposition of compounds on a substrate by means of organometallic gas phase deposition
KR101354140B1 (en) * 2008-02-27 2014-01-22 소이텍 Thermalization of gaseous precursors in cvd reactors
US8221853B2 (en) * 2008-09-03 2012-07-17 The Regents Of The University Of California Microwave plasma CVD of NANO structured tin/carbon composites

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4545327A (en) * 1982-08-27 1985-10-08 Anicon, Inc. Chemical vapor deposition apparatus
US4558660A (en) * 1982-03-16 1985-12-17 Handotai Kenkyu Shinkokai Semiconductor fabricating apparatus
DE4006449A1 (en) * 1989-03-01 1990-09-13 Toyoda Gosei Kk SUBSTRATE FOR GROWING A GALLIUM NITRIDE CONNECTION SEMICONDUCTOR DEVICE AND LIGHT EMITTER DIODE
US5044943A (en) * 1990-08-16 1991-09-03 Applied Materials, Inc. Spoked susceptor support for enhanced thermal uniformity of susceptor in semiconductor wafer processing apparatus
JPH04187597A (en) * 1990-11-22 1992-07-06 Matsushita Electric Ind Co Ltd Method for manufacturing gallium nitride thin film
US5179677A (en) * 1990-08-16 1993-01-12 Applied Materials, Inc. Apparatus and method for substrate heating utilizing various infrared means to achieve uniform intensity

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4558660A (en) * 1982-03-16 1985-12-17 Handotai Kenkyu Shinkokai Semiconductor fabricating apparatus
US4545327A (en) * 1982-08-27 1985-10-08 Anicon, Inc. Chemical vapor deposition apparatus
DE4006449A1 (en) * 1989-03-01 1990-09-13 Toyoda Gosei Kk SUBSTRATE FOR GROWING A GALLIUM NITRIDE CONNECTION SEMICONDUCTOR DEVICE AND LIGHT EMITTER DIODE
US5044943A (en) * 1990-08-16 1991-09-03 Applied Materials, Inc. Spoked susceptor support for enhanced thermal uniformity of susceptor in semiconductor wafer processing apparatus
US5179677A (en) * 1990-08-16 1993-01-12 Applied Materials, Inc. Apparatus and method for substrate heating utilizing various infrared means to achieve uniform intensity
JPH04187597A (en) * 1990-11-22 1992-07-06 Matsushita Electric Ind Co Ltd Method for manufacturing gallium nitride thin film

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9196800B2 (en) 1996-06-26 2015-11-24 Osram Gmbh Light-radiating semiconductor component with a luminescence conversion element

Also Published As

Publication number Publication date
WO1997008356A2 (en) 1997-03-06

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