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AU2003217530A1 - Apparatus and method for depositing organic matter of vapor phase - Google Patents

Apparatus and method for depositing organic matter of vapor phase

Info

Publication number
AU2003217530A1
AU2003217530A1 AU2003217530A AU2003217530A AU2003217530A1 AU 2003217530 A1 AU2003217530 A1 AU 2003217530A1 AU 2003217530 A AU2003217530 A AU 2003217530A AU 2003217530 A AU2003217530 A AU 2003217530A AU 2003217530 A1 AU2003217530 A1 AU 2003217530A1
Authority
AU
Australia
Prior art keywords
organic matter
vapor phase
depositing organic
depositing
vapor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2003217530A
Inventor
Kyung-Bin Bae
Dong-Kwon Choi
Dong-Soo Kim
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ANS Inc
Original Assignee
ANS Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020020017755A external-priority patent/KR100358727B1/en
Priority claimed from KR10-2002-0061629A external-priority patent/KR100375076B1/en
Application filed by ANS Inc filed Critical ANS Inc
Publication of AU2003217530A1 publication Critical patent/AU2003217530A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45587—Mechanical means for changing the gas flow
    • C23C16/45589—Movable means, e.g. fans
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/228—Gas flow assisted PVD deposition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4485—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation without using carrier gas in contact with the source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4486—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by producing an aerosol and subsequent evaporation of the droplets or particles

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Dispersion Chemistry (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
AU2003217530A 2002-04-01 2003-03-27 Apparatus and method for depositing organic matter of vapor phase Abandoned AU2003217530A1 (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
KR1020020017755A KR100358727B1 (en) 2002-04-01 2002-04-01 Apparatus and method for depositing organic matter of vapor phase
KR10-2002-0017755 2002-04-01
KR10-2002-0061629A KR100375076B1 (en) 2002-10-10 2002-10-10 Apparatus and method for manufacturing the organic semiconductor device with a large size of substrate
KR10-2002-0061629 2002-10-10
PCT/KR2003/000605 WO2003083169A1 (en) 2002-04-01 2003-03-27 Apparatus and method for depositing organic matter of vapor phase

Publications (1)

Publication Number Publication Date
AU2003217530A1 true AU2003217530A1 (en) 2003-10-13

Family

ID=28677688

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2003217530A Abandoned AU2003217530A1 (en) 2002-04-01 2003-03-27 Apparatus and method for depositing organic matter of vapor phase

Country Status (5)

Country Link
JP (2) JP3962349B2 (en)
CN (1) CN1218372C (en)
AU (1) AU2003217530A1 (en)
TW (1) TW200304956A (en)
WO (1) WO2003083169A1 (en)

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Publication number Priority date Publication date Assignee Title
US7238389B2 (en) * 2004-03-22 2007-07-03 Eastman Kodak Company Vaporizing fluidized organic materials
US20060099344A1 (en) * 2004-11-09 2006-05-11 Eastman Kodak Company Controlling the vaporization of organic material
US7989021B2 (en) * 2005-07-27 2011-08-02 Global Oled Technology Llc Vaporizing material at a uniform rate
TWI386516B (en) * 2005-10-28 2013-02-21 Hon Hai Prec Ind Co Ltd Apparatus for fabrication of carbon nanotubes
DE102006023046B4 (en) * 2006-05-17 2009-02-05 Qimonda Ag Method and starting material for providing a gaseous precursor
KR101028044B1 (en) * 2007-09-04 2011-04-08 주식회사 테라세미콘 Source gas supply device
CN102575347B (en) * 2009-10-05 2014-02-26 东京毅力科创株式会社 Film forming device, film forming head and film forming method
JP5452178B2 (en) * 2009-11-12 2014-03-26 株式会社日立ハイテクノロジーズ Vacuum deposition apparatus, vacuum deposition method, and organic EL display device manufacturing method
KR101479528B1 (en) * 2010-09-03 2015-01-07 울박, 인크 Protective film forming method, and surface flattening method
JP5570939B2 (en) * 2010-10-21 2014-08-13 株式会社アルバック Thin film forming apparatus and thin film forming method
CN104911565B (en) * 2014-03-11 2017-12-22 中微半导体设备(上海)有限公司 A kind of chemical vapor deposition unit
CN105339522B (en) * 2014-06-12 2018-08-10 深圳市大富精工有限公司 A vacuum coating device and a vacuum coating method
DE202014106226U1 (en) 2014-09-30 2015-10-28 Osram Oled Gmbh Organic electronic component
WO2016070941A1 (en) * 2014-11-07 2016-05-12 Applied Materials, Inc. Material source arrangment and nozzle for vacuum deposition
CN114016129B (en) * 2021-10-09 2023-03-24 山东有研国晶辉新材料有限公司 Novel zinc selenide growth method
CN114934265B (en) * 2022-05-26 2023-03-07 中国科学院长春光学精密机械与物理研究所 Film growth device and method and vanadium dioxide film growth method
CN114705789B (en) * 2022-06-06 2022-09-02 中科阿斯迈(江苏)检验检测有限公司 Gas chromatography device for laboratory detection

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61291965A (en) * 1985-06-18 1986-12-22 Fujitsu Ltd Superhigh-vacuum chamber
JPH0774450B2 (en) * 1987-12-22 1995-08-09 日電アネルバ株式会社 Surface treatment equipment
JPH04236769A (en) * 1991-01-17 1992-08-25 Ulvac Japan Ltd Film forming device
JPH07243025A (en) * 1994-03-03 1995-09-19 Kobe Steel Ltd Surface treated material excellent in design characteristic and its production
JPH07321057A (en) * 1994-05-23 1995-12-08 Nippon Steel Corp Deposition system for semiconductor devices
WO1997008356A2 (en) * 1995-08-18 1997-03-06 The Regents Of The University Of California Modified metalorganic chemical vapor deposition of group iii-v thin layers
JPH1197433A (en) * 1997-09-18 1999-04-09 Nec Yamagata Ltd Atmospheric-pressure cvd equipment
JPH11293461A (en) * 1998-04-16 1999-10-26 Matsushita Electric Ind Co Ltd Oxide vapor deposition and deposited thin films
US6368665B1 (en) * 1998-04-29 2002-04-09 Microcoating Technologies, Inc. Apparatus and process for controlled atmosphere chemical vapor deposition
JP2000216095A (en) * 1999-01-20 2000-08-04 Tokyo Electron Ltd Single wafer processing type heat treating apparatus
JP4487338B2 (en) * 1999-08-31 2010-06-23 東京エレクトロン株式会社 Film forming apparatus and film forming method
EP1167566B1 (en) * 2000-06-22 2011-01-26 Panasonic Electric Works Co., Ltd. Apparatus for and method of vacuum vapor deposition
JP4980204B2 (en) * 2007-11-29 2012-07-18 日揮触媒化成株式会社 Method for producing titanium oxide-based deodorant

Also Published As

Publication number Publication date
JP2003293140A (en) 2003-10-15
CN1450610A (en) 2003-10-22
TW200304956A (en) 2003-10-16
JP2007146292A (en) 2007-06-14
CN1218372C (en) 2005-09-07
WO2003083169A1 (en) 2003-10-09
JP3962349B2 (en) 2007-08-22

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase