WO1997050111A1 - Semiconducteur chip and reticle for manufacturing semiconductor - Google Patents
Semiconducteur chip and reticle for manufacturing semiconductor Download PDFInfo
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- WO1997050111A1 WO1997050111A1 PCT/JP1997/002196 JP9702196W WO9750111A1 WO 1997050111 A1 WO1997050111 A1 WO 1997050111A1 JP 9702196 W JP9702196 W JP 9702196W WO 9750111 A1 WO9750111 A1 WO 9750111A1
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/544—Marks applied to semiconductor devices or parts
- H01L2223/54413—Marks applied to semiconductor devices or parts comprising digital information, e.g. bar codes, data matrix
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/544—Marks applied to semiconductor devices or parts
- H01L2223/54433—Marks applied to semiconductor devices or parts containing identification or tracking information
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/544—Marks applied to semiconductor devices or parts
- H01L2223/54453—Marks applied to semiconductor devices or parts for use prior to dicing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/544—Marks applied to semiconductor devices or parts
- H01L2223/54473—Marks applied to semiconductor devices or parts for use after dicing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Definitions
- the present invention relates to a semiconductor chip and a reticle for manufacturing a semiconductor, and more particularly to a reticle for manufacturing a semiconductor chip and a semiconductor chip whose design coordinate position can be easily specified by a pattern provided on the semiconductor chip.
- the location of the final functional defect of a semiconductor chip detected by fail bit inspection is specified by CAD data, and when visually checking the cause of the defect for observation and analysis, the semiconductor chip to be observed is Alternatively, load the semiconductor wafer on which the semiconductor chip is built into a stage equipped with a microscope, such as a review station, and locate it at the location specified by the CAD data. To this end, alignment techniques used for other applications such as steppers were used.
- the alignment force used for other uses such as steppers does not exactly match the design coordinate system based on the virtually existing scribe center, and this alignment marker is used.
- this alignment marker is used.
- it When it is positioned by positioning it, it will be out of order of tens of micrometers.
- a review station or the like described in the prior art even if the stage is moved to the indicated coordinate values, several to ten cells are required from the target location. It is located some distance away, and it takes a lot of man-hours to look around the area visually.
- design coordinate system on actual chip It is necessary to reduce the man-hours required for the observation by taking measures to make the observation possible. Disclosure of the invention
- the problem described above is to utilize the peripheral area of the chip formed on the semiconductor wafer, and to set the position in the chip to the uppermost layer part during visual observation or to the layer that can be detected at the time of observation by design coordinates in this area.
- a pattern obtained by encoding the position on each coordinate axis of the design coordinate system is provided in a specific area in the outer peripheral part on the chip in a horizontal and vertical direction, so that the pattern is read by a computer at the time of observation and encoded. This is achieved by reading the position information on each coordinate axis by decoding from and positioning the chip.
- FIG. 1 is a plan view showing an arrangement of semiconductor chips on a semiconductor wafer
- FIG. 2 is a view showing a variation of an XY coordinate system on the semiconductor chip.
- FIG. 3 is a plan view showing a schematic configuration of a semiconductor chip.
- FIG. 4 is an enlarged plan view showing a part of the corner of the gardening portion when the present invention selects the gardening portion of the semiconductor chip as a predetermined region.
- FIGS. 5 and 6 are plan views showing a method of encoding a pattern in a girder drilling part when a girder part of a semiconductor chip is selected as a predetermined region according to the present invention.
- the figure is a diagram for explaining a correspondence table between an encoding pattern and a decoded value according to the present invention.
- FIG. 8 is a plan view showing a method of coding a pattern in the guarding portion when the present invention selects a guarding portion of a semiconductor chip as a predetermined region.
- FIG. 9 shows that the present invention is applied to a semiconductor chip gardening as a predetermined region.
- FIG. 6 is an enlarged plan view showing a corner portion of the semiconductor chip when the outside of the portion is selected.
- FIG. 10 is a plan view showing a method of encoding a pattern in a scribe area when the present invention selects a scribe area as a predetermined area.
- FIG. 11 and FIG. FIG. 7 is a plan view showing another example of a method of encoding a pattern in a scribe area.
- FIG. 13 is an enlarged plan view showing a part of a corner of a semiconductor chip when the present invention is selected between a bonding portion and a circuit pattern forming region region as a predetermined region. is there.
- FIG. 1 is an enlarged view of one of the semiconductor chips built on a semiconductor substrate.
- the rectangular area around the diagonal line shown by 1 is one semiconductor chip, and the diagonal area around 8 is the semiconductor chip built on the semiconductor wafer adjacent to the 1 semiconductor chip. Is shown.
- the dashed-dotted line indicated by 2 is called a scribe center, and serves as a guideline when dicing the semiconductor chip 1 and surrounding chips to separate them and finally cut them into individual semiconductor chips.
- Fig. 1 two vertically running scribe centers and two horizontally running scribe centers are indicated by alternate long and short dash lines.
- the position in the semiconductor chip 1 shown at the center is defined by the XY coordinate system defined by the X and Y coordinates shown in FIG. , 4, 5, and 6 are rectangular areas.
- the origin indicated by 3 is called the design origin.
- semiconductor chip 1 The design origin of the upper adjacent semiconductor chip is 4, and the same coordinate system and area are defined recursively. Depending on the design data, the design origin may be 4, 5, or 6, instead of 3. Also, as shown in FIG. 2, there are eight possible ways to define the XY coordinate system, including the method shown in FIG. Hereinafter, the description will be made using the design origin position shown in FIG. 1 and the design coordinate system defined by the XY coordinate system.
- FIG. 3 is an enlarged view of the semiconductor chip 1 shown in FIG.
- Reference numeral 7 denotes a region sandwiched between the rectangular regions 3, 4, 5, and 6 and the semiconductor chip 1, and is called a scribe region.
- Reference numeral 8 denotes a region provided on the outer peripheral portion of the semiconductor chip 1 and is called a bonding portion.
- the guard ring is provided to prevent moisture and sodium from entering the chip from the side, and is made of aluminum or silicon oxide with a width of about tens of microphones. Is formed by the material used in the above.
- Reference numeral 10 denotes a circuit pattern forming area of the chip body in which a wiring circuit pattern that actually functions is formed.
- Reference numeral 9 denotes an area between the normal gardening portion 8 and the circuit pattern formation area 10, which is usually a blank area of 100 to 200 microphones D-torl.
- the area for forming a pattern that encodes the position on each coordinate axis of the design coordinate system so that the position in the circuit pattern formation area 10 can be identified by the design coordinate value includes the scribe area 7, the guard-ring section 8, and the blank area. 9 It may be used.
- FIG. 4 is an enlarged view of the lower left corner of the semiconductor chip shown in FIG.
- the design coordinate system is represented by the X and Y axes defined by the design coordinate origin 3 and the scribe center.
- 8 is a girdering part
- 10 is a circuit pattern formation area.
- a rectangular wave pattern is cut around the outer periphery of the guiding portion 8 shown in FIG.
- the coordinate value on the X axis or the coordinate value on the Y axis is encoded using the cut position of the rectangular wave in the directions corresponding to the X axis and the Y axis, the size of the rectangular wave, and the distance between the rectangular waves.
- FIG. 5 shows a first specific example of encoding using a gardening unit.
- the interval U represents one unit of the encoded pattern.
- Section D is a delimiter that indicates a break in the pattern unit.
- Section B is a bit pattern. If there is a rectangular cut pattern as shown in part of section B, the value is set to binary code 1; otherwise, it is set to 0.
- the cut width of the rectangle is set to one half of the bit area section B. This width may be an arbitrary fixed distance.
- the delimiter and the bit pattern are distinguished by the difference of each pattern width s1 and S2.
- the code coded by the pattern unit is read as follows. First, a delimiter of pattern width S1 is detected, and the bit pattern following it is read. In FIG. 5, the width is written in 9 bits, but this bit width may be changed as necessary.
- the bit pattern in FIG. 5 is 101 1 110 1, which represents a decimal number of 370.
- 0 to 5 1 1 can be represented. Therefore, as shown in FIG. 5, when considered in the X direction, the size XS in the X direction of the circuit pattern formation area 10 shown in FIG. Is defined as X unit, and the starting position of the pattern unit is determined in advance as X start as shown in Fig. 4, so that the pattern unit shown in Fig. 5 Start position X n
- the encoded pattern in the X and Y directions of the gardening section 8 is formed.
- the positions of X and Y are determined, and the position indicated by any design coordinates in the circuit pattern formation region 10 can be determined.
- the distance of the pattern unit section U may be shortened and the bit width may be increased.
- the Y direction may be shortened and the bit width may be increased.
- FIG. 6 shows a second embodiment using a girder ring.
- Section U represents one unit of the encoded pattern.
- the section D is a delimiter indicating a break between the patterns Pl, P2, and P3 encoded by the length.
- the pattern lengths indicated by Pl, P2, and P3 are quantized in 10 steps. That is, if the minimum unit distance is d, the pattern length P n is
- the combination of the following three pattern lengths starting from any delimiter must be unique, that is, it corresponds to one axis direction of X or Y in one chip.
- the condition is that there is no overlap in the combination of three consecutive pattern lengths, which are in the drawing 8. This is hereinafter referred to as a non-duplication condition.
- the pattern length In determining the pattern length, the following must be considered. First, the pattern length must be determined cyclically. That is, if P1, P2, and P3 are determined, the first two of the next pattern are P2 and P3, and P2, P3 It is necessary to determine the next pattern P4 following. Second, the distance U including the three pattern lengths needs to be averaged as a whole.
- the encoding of the gardening section 8 in the X and Y directions is performed.
- the positions of X and Y are determined from the obtained pattern, and the position indicated by arbitrary design coordinates in the chip 10 can be determined.
- the pattern combination is 3 and the pattern length is 10 steps.
- the number of combinations of patterns and the number of steps of the pattern length may be different values.
- FIG. 8 shows a third embodiment using a guiding part.
- This method is a modification of the first embodiment using the gardening unit shown in FIG. 5, and a section U represents one unit of the encoded pattern.
- Section D is a pattern This is a delineation showing the end of the unit.
- Section B is a bit pattern. If there is a rectangular cut pattern as shown in part of section B, it is set to binary code 1; otherwise, it is set to 0.
- the cut width of the rectangle is set to one half of the bit area section B, but this width may be an arbitrary constant distance.
- the delimiter and the 'bit pattern are identified by the difference between the pattern widths S1 and S2.
- the first embodiment using the guarding part is that one bit has a depth d. d is quantized in six steps. That is, assuming that the minimum unit distance is w, the path length P n is
- the bit pattern encoding method such as NRZ-I, MFM, and MDM used in magnetic recording devices and the like is used. Etc. can also be applied.
- the pattern provided to the girdering portion may be outside or inside the girdering.
- the pattern to be formed is described as a rectangle, any other shape may be used as long as it can be detected, for example, a sawtooth shape, a triangle, a semicircle, or the like.
- FIG. 9 is an enlarged view of the lower left corner of the semiconductor chip shown in FIG.
- the design coordinate system is represented by the design coordinate origin 3 and the X and Y axes defined by the scribe center.
- 8 is Gardrin And 10, a circuit pattern forming area.
- the oblique hatched rectangular area 11 shown in FIG. 9 is a pattern formed for the same purpose as the pattern formed on the edge of the gardening portion in the above-described embodiment using the gardening portion.
- the coordinate value on the X axis or the coordinate value on the Y axis is encoded using the position of the rectangular pattern in the direction corresponding to the X axis and the Y axis, the size of the rectangular pattern, and the distance between the rectangular patterns.
- FIG. 10 shows a first specific example of encoding using a scribe area.
- Section U represents one unit of the encoded pattern.
- Section D is a delimiter that indicates a break in the unit in the palace.
- Section B is a bit pattern. If there is a sheep-shaped notch pattern as shown in part of section B, set it to binary code 1; otherwise, set it to 0.
- the width of the rectangular pattern is set to one half of the bit area section B, but the width may be any constant distance.
- the delimiter and bit pattern are identified by the difference between each pattern width S 1 and S 2.
- the code coded by the pattern unit is read as follows. First, a delimiter with a pattern width of S1 is detected, and the subsequent bit pattern is read. In Fig. 10, it is written in 9-bit width, but this bit width may be changed as needed.
- the bit pattern in FIG. 10 is 101 1 110 0 10 and represents a decimal number of 3700.
- 0 to 5 1 1 can be represented.Thus, considering in the X direction as shown in Fig. 10, the X direction size XS of chip 10 shown in Fig. 3 is 5 12 or less. If the appropriate divided distance is defined as X unit and the starting position of the pattern unit is determined in advance as X start as shown in Fig. 9, the starting position of the pattern unit shown in Fig. 10 X n
- the X and Y encoded patterns in the X and Y directions of the scribe area 7 can be obtained. Is determined, and a position indicated by arbitrary design coordinates in the circuit pattern formation region 10 can be determined.
- Section U represents one unit of the encoded pattern.
- Section D is a delimiter indicating a break between patterns P1, P2, and P3 encoded by the length.
- the pattern lengths indicated by Pl, P2, and P3 are quantized in 10 steps. That is, if the minimum unit distance is d, the pattern length P n is
- the position of the delimiter can be specified by measuring the first three pattern lengths P1, P2, and P3 from one delimiter.
- the combination of the following three pattern lengths starting from an arbitrary delimiter must be unique, that is, a scribe area corresponding to one X or Y axis direction in one chip.
- the condition is that there is no overlap in the combination of three consecutive pattern lengths. This is hereinafter referred to as a non-overlapping condition.
- the pattern length must be determined cyclically. That is, if P 1, P 2, and P 3 are determined, the first two of the following patterns are P 2 and P 3, and under these conditions, P 2 It is necessary to determine the next pattern P4 following P3.
- P 1, P 2, and P 3 determined under the above conditions complicates the correspondence with the actual coordinate values. Therefore, as shown in FIG. 7, P 1, P 2, and P 3 The combination is used as an index, and table data is stored in advance so that the coordinate value X can be obtained.
- the scribe area 7 can be encoded in the X and Y directions.
- the positions of X and Y are determined from the obtained pattern, and the position indicated by arbitrary design coordinates in the circuit pattern formation region 10 can be determined.
- FIG. 8 shows a third embodiment using a scribe area. This method is a modification of the first embodiment using the scribe area shown in FIG. 10, and a section U represents one unit of the encoded pattern. Section D is a delimiter indicating a break in the unit of the pattern. Section B is a bit pattern. If a rectangular cut pattern as shown in the figure exists in a part of section B, the binary code is set to 1. Otherwise, it is set to 0.
- the cut width of the rectangle is set to one half of the bit area section B, but this width may be an arbitrary constant distance.
- the delimiter and the bit pattern are identified by the difference between the pattern widths S 1 and S 2.
- the first embodiment using the gardening part is that one bit has a depth d.
- d is quantized in six stages. That is, if the minimum unit distance is w, the pattern length P n is
- the value of 6 to the fourth power that is, a value from 0 to 1295, and the length of one unit can be expressed by the first It can be expressed in about half as compared with the embodiment.
- the correspondence with the coordinate values is the same as in the first embodiment using the scribe area.
- bit pattern coding methods such as NRZ-I, MFM, and M used in magnetic recording devices and the like. Etc. are also applicable.
- the pattern to be formed has been described as a rectangle, but any other shape, such as a sawtooth shape, a triangle, or a semicircle, may be used as long as it can be detected.
- FIG. 13 is a further enlarged view of the lower left corner of the semiconductor chip shown in FIG.
- the design coordinate system is represented by the design coordinate origin 3 and the X and Y axes defined by the scribe center.
- Reference numeral 8 denotes a guard portion
- 10 denotes a circuit pattern forming region
- 9 denotes a blank region between the guard portion 8 and the circuit pattern forming region.
- a hatched rectangular area 12 shown in FIG. 13 corresponds to c X-axis and Y-axis, which are patterns formed for the same purpose as the pattern described in the above embodiment using the scribe area. Using the position of the rectangular pattern in the direction, the size of the rectangular pattern, and the distance between the rectangular patterns, the coordinate value on the X axis or the coordinate value on the Y axis is encoded.
- X start in FIG. 13 corresponds to X start in the first embodiment using the scribe area disclosed in the scribe area 7.
- the encoded pattern only needs to be formed on the uppermost layer or a layer that can be observed by a method using an optical or an electron beam and a method using an ultrasonic wave during visual observation. .
- a pattern that encodes the position on each coordinate axis of the design coordinate system is provided on the chip so that the position in the chip can be identified by the design coordinate value. Observing the pattern, extracting the pattern by image processing, decoding the coded pattern information, and reading out the position information on each coordinate axis to obtain the chip position accurately Becomes possible.
- the semiconductor chip to which the present invention is applied to the production process of a semiconductor device, it becomes possible to observe a defect position that causes a final functional defect of the semiconductor chip in a short time, thereby making it possible to process the semiconductor chip in a short time. It is expected that the feedback for improvement will be faster.
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Abstract
Description
明 細 書 Specification
半導体チップおよび半導体製造用レチクル 技術分野 Technical field of semiconductor chips and semiconductor manufacturing reticles
本発明は半導体チップおよび半導体製造用レチクルに係わり、 特に設 計座標位置が半導体チップに設けられたパターンによつて特定容易な半 導体チップおよびそめ半導体チップを製造するためのレチクルに関する ( 背景技術 The present invention relates to a semiconductor chip and a reticle for manufacturing a semiconductor, and more particularly to a reticle for manufacturing a semiconductor chip and a semiconductor chip whose design coordinate position can be easily specified by a pattern provided on the semiconductor chip.
従来、 フェイルビッ 卜検査で検出される半導体チップの最終的な機能 欠陥はその位置が C A Dデータで指定され、 その欠陥原因を観察 · 解析 するために目視確認するときは、 被観察対象である半導体チップあるい はその半導体チップが作り込まれている半導体ゥヱ一ハをレビューステ ーショ ンなどの顕微鏡等が装着されているステージにローディ ングし、 前記 C A Dデータで指定された場所に位置だしをするために、 ステツパ 等の他の用途に使用されるァライメ ン トマ一力を用いていた。 Conventionally, the location of the final functional defect of a semiconductor chip detected by fail bit inspection is specified by CAD data, and when visually checking the cause of the defect for observation and analysis, the semiconductor chip to be observed is Alternatively, load the semiconductor wafer on which the semiconductor chip is built into a stage equipped with a microscope, such as a review station, and locate it at the location specified by the CAD data. To this end, alignment techniques used for other applications such as steppers were used.
しかしながら、 ステツパ等の他の用途に使用されるァライメ ン トマ一 力は、 仮想的に存在するスクライブセンタ一を基準と した設計座標系と は厳密には一致せず、 このァライメ ン 卜マーカを用いて位置決めしたと き数十マイクロメ-トルの狂いを生じる。 このため従来の技術で述べたレビュー ステーショ ン等を用いて設計座標値で指示された欠陥を観察するときに、 指示された座標値にステージを移動させても目的の場所より数から十セ ル程度離れた場所に位置だしされ、 後は目視で周辺を探すために、 大変 な工数がかかっている。 このため実際のチップ上に設計座標系との対応 がとれるような工夫を施し、 前記観察の工数を低減する必要がある。 発明の開示 However, the alignment force used for other uses such as steppers does not exactly match the design coordinate system based on the virtually existing scribe center, and this alignment marker is used. When it is positioned by positioning it, it will be out of order of tens of micrometers. For this reason, when observing a defect indicated by design coordinate values using a review station or the like described in the prior art, even if the stage is moved to the indicated coordinate values, several to ten cells are required from the target location. It is located some distance away, and it takes a lot of man-hours to look around the area visually. Correspondence with design coordinate system on actual chip It is necessary to reduce the man-hours required for the observation by taking measures to make the observation possible. Disclosure of the invention
上記課題は、 半導体ゥエーハ上に形成されるチップの周辺領域を利用 して、 この領域に目視観察時において最上層の部分あるいは観察時に検 出可能な層に、 チップ内の位置が設計座標値で分かるよう前記設計座標 系の各座標軸上の位置を符号化したパターンをチップ上の外周部の水平. 垂直方向の特定領域に設けることにより、 観察時そのパターンを計算機 に読み込ませ符号化されたパターンからデコーディ ングにより各座標軸 上の位置情報を読み出し、 チップを位置決めすることにより達成される。 図面の簡単な説明 The problem described above is to utilize the peripheral area of the chip formed on the semiconductor wafer, and to set the position in the chip to the uppermost layer part during visual observation or to the layer that can be detected at the time of observation by design coordinates in this area. As can be seen, a pattern obtained by encoding the position on each coordinate axis of the design coordinate system is provided in a specific area in the outer peripheral part on the chip in a horizontal and vertical direction, so that the pattern is read by a computer at the time of observation and encoded. This is achieved by reading the position information on each coordinate axis by decoding from and positioning the chip. BRIEF DESCRIPTION OF THE FIGURES
第 1図は、 半導体ゥェ一ハ上の半導体チップ配置を示す平面図であり、 第 2図は、 半導体チップ上の X Y座標系のバリエ一シヨ ンを示す図であ る。 FIG. 1 is a plan view showing an arrangement of semiconductor chips on a semiconductor wafer, and FIG. 2 is a view showing a variation of an XY coordinate system on the semiconductor chip.
第 3図は、 半導体チップの概略構成を示す平面図である。 第 4図は、 本発明を、 所定の領域として半導体チップのガ一 ドリ ング部を選んだ場 合の、 ガー ドリ ング部のコーナ一部分を拡大して示した平面図である。 第 5図および第 6図は、 本発明を、 所定の領域として半導体チップのガ — ドリ ング部を選んだ場合の、 ガー ドリ ング部におけるパターンの符号 化方法を示す平面図であり、 第 7図は、 本発明による符号化パターンと デコー ド値の対応テーブルを説明する図である。 FIG. 3 is a plan view showing a schematic configuration of a semiconductor chip. FIG. 4 is an enlarged plan view showing a part of the corner of the gardening portion when the present invention selects the gardening portion of the semiconductor chip as a predetermined region. FIGS. 5 and 6 are plan views showing a method of encoding a pattern in a girder drilling part when a girder part of a semiconductor chip is selected as a predetermined region according to the present invention. The figure is a diagram for explaining a correspondence table between an encoding pattern and a decoded value according to the present invention.
第 8図は、 本発明を、 所定の領域として半導体チップのガー ドリ ング 部を選んだ場合の、 ガー ドリ ング部におけるパターンの符号化方法を示 す平面図である。 FIG. 8 is a plan view showing a method of coding a pattern in the guarding portion when the present invention selects a guarding portion of a semiconductor chip as a predetermined region.
第 9図は、 本発明を、 所定の領域として半導体チップのガー ドリ ング 部の外側を選んだ場合の、 半導体チップのコーナー部分を拡大して示し た平面図である。 FIG. 9 shows that the present invention is applied to a semiconductor chip gardening as a predetermined region. FIG. 6 is an enlarged plan view showing a corner portion of the semiconductor chip when the outside of the portion is selected.
第 1 0図は、 本発明を、 所定の領域としてスクライブ領域を選んだ場 合の、 スクライブ領域におけるパターンの符号化方法を示した平面図で あり、 第 1 1図および第 1 2図は、 それぞれ、 スクライブ領域におけ るパターンの符号化方法の別の例を示す平面図である。 FIG. 10 is a plan view showing a method of encoding a pattern in a scribe area when the present invention selects a scribe area as a predetermined area. FIG. 11 and FIG. FIG. 7 is a plan view showing another example of a method of encoding a pattern in a scribe area.
第 1 3図は、 本発明を、 所定の領域としてガ一 ドリ ング部と回路パタ ―ン形成領域領域との間を選んだ場合の、 半導体チップのコーナ一部分 を拡大して示した平面図である。 発明を実施するための最良の形態 FIG. 13 is an enlarged plan view showing a part of a corner of a semiconductor chip when the present invention is selected between a bonding portion and a circuit pattern forming region region as a predetermined region. is there. BEST MODE FOR CARRYING OUT THE INVENTION
以下、 本発明の実施例を図面を参照しながら説明する。 第 1図は半導 体ゥヱ一ハ上に作り込まれた半導体チップの 1つを拡大して図示したも のである。 Hereinafter, embodiments of the present invention will be described with reference to the drawings. FIG. 1 is an enlarged view of one of the semiconductor chips built on a semiconductor substrate.
1で示される斜線を周囲に施された矩形領域が 1個の半導体チップで あり、 周囲 8近傍に示される斜線領域は 1の半導体チップに隣接して半 導体ゥエーハ上に作り込まれた半導体チップを示す。 2で示される一点 鎖線はスクライブセンターと呼ばれ、 半導体チップ 1および周囲のチッ プをダイシングして切り離し一個一個の半導体チップに最終的にするた めに切断するときの目安となる線である。 The rectangular area around the diagonal line shown by 1 is one semiconductor chip, and the diagonal area around 8 is the semiconductor chip built on the semiconductor wafer adjacent to the 1 semiconductor chip. Is shown. The dashed-dotted line indicated by 2 is called a scribe center, and serves as a guideline when dicing the semiconductor chip 1 and surrounding chips to separate them and finally cut them into individual semiconductor chips.
第 1図には 2本の垂直に走るスクライブセンターと 2本の水平に走る スクライブセンターが一点鎖線で示されている。 中央に示される半導体 チップ 1 内の位置は 3で示されるスクライブセンターの交点を原点とし、 第 1図中に示される X, Y座標で定義される X Y座標系で示され、 その 範囲は点 3、 4、 5、 6で囲まれる矩形領域である。 In Fig. 1, two vertically running scribe centers and two horizontally running scribe centers are indicated by alternate long and short dash lines. The position in the semiconductor chip 1 shown at the center is defined by the XY coordinate system defined by the X and Y coordinates shown in FIG. , 4, 5, and 6 are rectangular areas.
3で示される原点は設計原点と呼ばれる。 例えば、 半導体チップ 1の 上方に隣接する半導体チップの設計原点は 4 となり、 同様の座標系、 領 域が、 再帰的に定義される。 設計デ一夕によっては、 設計原点を 3では なく、 4、 5あるいは 6にとることもありうる。 また、 X Yの座標系も、 第 2図に示すように、 定義の仕方としては、 第 1図で示した方法も含め て 8通りが考えられる。 以降は、 第 1図に示した設計原点位置、 及び X Y座標系で定義される設計座標系を用いて説明を進める。 The origin indicated by 3 is called the design origin. For example, semiconductor chip 1 The design origin of the upper adjacent semiconductor chip is 4, and the same coordinate system and area are defined recursively. Depending on the design data, the design origin may be 4, 5, or 6, instead of 3. Also, as shown in FIG. 2, there are eight possible ways to define the XY coordinate system, including the method shown in FIG. Hereinafter, the description will be made using the design origin position shown in FIG. 1 and the design coordinate system defined by the XY coordinate system.
半導体チップ内の全ての配線パターン、 回路位置等の設計データは第 1図で示した設計原点 3を原点とした X Y座標値によって記述される。 第 3図は、 第 1図に示した半導体チップ 1の拡大図である。 7は矩形 領域 3、 4、 5、 6 と半導体チップ 1 に挟まれた領域でスクライブ領域 と呼ばれる。 8は半導体チップ 1の外周部に設けられた領域でガ一 ドリ ング部と呼ばれる。 Design data such as all wiring patterns and circuit positions in the semiconductor chip is described by XY coordinate values with the origin 3 as the origin shown in FIG. FIG. 3 is an enlarged view of the semiconductor chip 1 shown in FIG. Reference numeral 7 denotes a region sandwiched between the rectangular regions 3, 4, 5, and 6 and the semiconductor chip 1, and is called a scribe region. Reference numeral 8 denotes a region provided on the outer peripheral portion of the semiconductor chip 1 and is called a bonding portion.
ガー ドリ ング部はチップへの横からの水分や、 ナ ト リゥ厶等の侵入を 防ぐことを目的に設けられ、 幅数十マイク口メ-トル程度のアルミあるいは酸化 シ リ コ ン等各工程で使用される材料により形成されている。 1 0は実際 に機能する配線回路パターンが作り込まれるチップ本体の回路パターン 形成領域を示す。 9は通常ガー ドリ ング部 8 と回路パターン形成領域 1 0の間の領域で通常 1 0 0〜 2 0 0マイク D -トルの空白領域となっている。 回路パターン形成領域 1 0内の位置が設計座標値で分かるよう設計座 標系の各座標軸上の位置を符号化したパターンを形成する領域としては、 スクライブ領域 7、 ガー ドリ ング部 8、 空白領域 9使用することが考え られる。 The guard ring is provided to prevent moisture and sodium from entering the chip from the side, and is made of aluminum or silicon oxide with a width of about tens of microphones. Is formed by the material used in the above. Reference numeral 10 denotes a circuit pattern forming area of the chip body in which a wiring circuit pattern that actually functions is formed. Reference numeral 9 denotes an area between the normal gardening portion 8 and the circuit pattern formation area 10, which is usually a blank area of 100 to 200 microphones D-torl. The area for forming a pattern that encodes the position on each coordinate axis of the design coordinate system so that the position in the circuit pattern formation area 10 can be identified by the design coordinate value includes the scribe area 7, the guard-ring section 8, and the blank area. 9 It may be used.
まず、 第 1の実施例としてガー ドリ ング部 8を用いた場合を説明する。 第 4図は第 3図に示した半導体チップの左下コーナーをさらに拡大図示 したものである。 設計座標系が設計座標原点 3およびスクライブセンタ 一で定義される X軸および Y軸で表されている。 8はガー ドリ ング部、 1 0は回路パターン形成領域である。 第 4図に示したガ一 ドリ ング部 8 の外周には矩形波上のパターンが切られれている。 X軸、 および Y軸に 対応する方向の矩形波の切り込み位置、 矩形波の大きさ、 矩形波間の距 離を用いて X軸上の座標値あるいは Y軸上の座標値を符号化する。 First, a case where the gardening unit 8 is used as a first embodiment will be described. FIG. 4 is an enlarged view of the lower left corner of the semiconductor chip shown in FIG. The design coordinate system is represented by the X and Y axes defined by the design coordinate origin 3 and the scribe center. 8 is a girdering part, 10 is a circuit pattern formation area. A rectangular wave pattern is cut around the outer periphery of the guiding portion 8 shown in FIG. The coordinate value on the X axis or the coordinate value on the Y axis is encoded using the cut position of the rectangular wave in the directions corresponding to the X axis and the Y axis, the size of the rectangular wave, and the distance between the rectangular waves.
ガー ドリ ング部を用いた符号化の第 1の具体例を、 第 5図に示す。 区 間 Uは符号化されたパターンの 1ュニッ 卜を表す。 区間 Dはパターンの ュニッ 卜の切れ目を示すデリ ミネ一夕一である。 区間 Bはビッ 卜パター ンである。 区間 Bの一部に図示したような矩形の切り込みパターンが存 在すれば 2進符号の 1 とし、 無ければ 0 とする。 FIG. 5 shows a first specific example of encoding using a gardening unit. The interval U represents one unit of the encoded pattern. Section D is a delimiter that indicates a break in the pattern unit. Section B is a bit pattern. If there is a rectangular cut pattern as shown in part of section B, the value is set to binary code 1; otherwise, it is set to 0.
第 5図では、 矩形の切り込み幅をビッ 卜領域区間 Bの片側半分とした カ^ この幅は任意の一定距離であっても構わない。 デリ ミネ一夕一とビ ッ トパターンは各パターン幅 s 1 , S 2の違いで識別する。 第 5図では In FIG. 5, the cut width of the rectangle is set to one half of the bit area section B. This width may be an arbitrary fixed distance. The delimiter and the bit pattern are distinguished by the difference of each pattern width s1 and S2. In Figure 5
S 1 : S 2 = 2 : 1 として表したが、 この比率は各パターンュニッ 卜間 で同一であれば任意である。 Although expressed as S1: S2 = 2: 1, this ratio is arbitrary as long as it is the same between each pattern unit.
第 5図において、 パターンュニッ 卜で符号化されたコ一 ドは次のよう にして読みとる。 まず、 パターン幅 S 1のデリ ミネ一夕一を検出しそれ に続く ビッ 卜パターンを読みとる。 第 5図では、 9 ビッ ト幅で書いてあ るが、 このビッ 卜幅も、 必要に応じて変更して構わない。 In FIG. 5, the code coded by the pattern unit is read as follows. First, a delimiter of pattern width S1 is detected, and the bit pattern following it is read. In FIG. 5, the width is written in 9 bits, but this bit width may be changed as necessary.
第 5図でのビッ トパターンは 1 0 1 1 1 0 0 1 ひであり、 十進数の 3 7 0を表す。 9 ビッ トパターンでは、 0から 5 1 1 までを表すことがで きるので、 第 5図に示すように、 X方向で考えれば、 第 3図に示す回路 パターン形成領域 1 0の X方向サイズ X Sを 5 1 2以下で分割した適当 な距離を X u n i t と定義し、 予めパターンュニッ 卜の開始する位置を 第 4図に示すように X s t a r t として決めておけば、 第 5図でしめす パターンユニッ トの開始位置 X nは The bit pattern in FIG. 5 is 101 1 110 1, which represents a decimal number of 370. In the 9-bit pattern, 0 to 5 1 1 can be represented. Therefore, as shown in FIG. 5, when considered in the X direction, the size XS in the X direction of the circuit pattern formation area 10 shown in FIG. Is defined as X unit, and the starting position of the pattern unit is determined in advance as X start as shown in Fig. 4, so that the pattern unit shown in Fig. 5 Start position X n
X n = X s t a r t + X u n i t x 3 7 O ( 101110010 : 2進 表現) X n = X start + X unitx 3 7 O (101110010: binary Expression)
で決定することができる。 Can be determined.
Y軸に関しても同様にしてガー ドリ ング部 8に Y軸座標上の座標位置 を符号化したパターンを形成しておけば、 ガー ドリ ング部 8の X方向及 び、 Y方向の符号化したパターンから X, Yの位置が決まり、 回路パタ ーン形成領域 1 0内の任意の設計座標で示される位置を決定することが できる。 Similarly, if a pattern in which the coordinate position on the Y-axis coordinate is encoded is formed in the gardening section 8 for the Y axis, the encoded pattern in the X and Y directions of the gardening section 8 is formed. Thus, the positions of X and Y are determined, and the position indicated by any design coordinates in the circuit pattern formation region 10 can be determined.
前述したようにもつと細かく X nの位置を定義したい場合はパターン ュニッ ト区間 Uの距離を短く し、 且つビッ ト幅を増やせば良い。 Y方向 についても同様である。 As described above, when it is desired to define the position of Xn finely, the distance of the pattern unit section U may be shortened and the bit width may be increased. The same applies to the Y direction.
ガー ドリ ング部を用いた第 2の実施例を、 第 6図に示す。 区間 Uは、 符号化されたパターンの 1ュニッ 卜を表す。 区間 Dは、 その長さで符号 ィ匕されているパターン P l、 P 2、 P 3の切れ目を示すデリ ミネ一ター である。 FIG. 6 shows a second embodiment using a girder ring. Section U represents one unit of the encoded pattern. The section D is a delimiter indicating a break between the patterns Pl, P2, and P3 encoded by the length.
P l、 P 2、 P 3で示されるパターン長は、 1 0段階で量子化されて いる。 すなわち、 最小単位距離を d とすれば、 パターン長 P nは The pattern lengths indicated by Pl, P2, and P3 are quantized in 10 steps. That is, if the minimum unit distance is d, the pattern length P n is
P n = d X n ( n = l、 2、 "ヽ 1 0 ) P n = d X n (n = l, 2, "ヽ 1 0)
の 1 0段階の長さをとる。 よって、 P l、 P 2、 P 3の組み合わせ数 1 0の 3乗、 すなわち 1 0 0 0通りの組み合わせが可能である。 よって、 一つのデリ ミネーターから先三つのパターン長さ P 1、 P 2、 P 3を測 定することにより、 そのデリ ミネ一ターの位置を特定できる。 Take the length of 10 steps. Therefore, the number of combinations of Pl, P2, and P3, which is the third power of 10th, that is, 10000 combinations is possible. Therefore, by measuring the first three pattern lengths P1, P2, and P3 from one delimiter, the position of the delimiter can be specified.
ただし、 これを実現するためには、 任意のデリ ミネ一夕一からはじま る次の三つのパターン長の組み合わせはユニークであること、 すなわち、 1チップ内の Xあるいは Yの 1軸方向に対応するガ一 ドリ ング 8にあり、 かつ連続した三つのパターン長の組み合わせに重複はないことが条件で ある。 これを以下、 重複不可条件と呼ぶ。 パターン長の決定にあたっては、 次のことを勘案する必要がある。 第 一に、パターン長は、巡回的に決定されなければならない。すなわち、 P 1、 P 2、 P 3を決めれば、 つぎのパターンの最初の二つは P 2、 P 3 であり、 その条件のもとで前述の重複不可条件を満たしながら P 2、 P 3に続く次のパターン P 4を決定する必要がある。 第二に、 三つのパタ 一ン長を含む距離 Uは、 全体的に平均化されていることが必要である。 こ れ は 、 あ る 部 分 は (PI , P2, P3) = (d, d, d) 、 ま た 別 の 部 分 は (p l , p2, p3) = ( 10d, 10d, 10d )であると、 座標位置の決定のためのデリ ミネ —ターの分布に大きなばらつきが生じ、 実用上の不都合が生じるためで ある。 However, in order to realize this, the combination of the following three pattern lengths starting from any delimiter must be unique, that is, it corresponds to one axis direction of X or Y in one chip. The condition is that there is no overlap in the combination of three consecutive pattern lengths, which are in the drawing 8. This is hereinafter referred to as a non-duplication condition. In determining the pattern length, the following must be considered. First, the pattern length must be determined cyclically. That is, if P1, P2, and P3 are determined, the first two of the next pattern are P2 and P3, and P2, P3 It is necessary to determine the next pattern P4 following. Second, the distance U including the three pattern lengths needs to be averaged as a whole. This means that one part is (PI, P2, P3) = (d, d, d) and another part is (pl, p2, p3) = (10d, 10d, 10d). This is because the distribution of the delimiters for determining the coordinate position greatly varies, which causes practical inconvenience.
以上の条件で決定された P 1、 P 2、 P 3の組み合わせは、 実際の座 標値との対応が複雑になるので、 第 7図に示すように、 P l、 P 2、 P 3の組み合わせをインデックスとして、 座標値 Xを求められるように、 予めテーブルデータ化し記憶しておき、 使用時参照する。 The combination of P1, P2, and P3 determined under the above conditions complicates the correspondence with the actual coordinates, and as shown in Fig. 7, the combination of P1, P2, and P3 The combination is used as an index, and table data is stored in advance so that the coordinate value X can be obtained.
Y軸に関しても、 同様にして、 ガー ドリ ング部 8に Y軸座標上の座標 位置を符号化したパターンを形成しておけば、 ガー ドリ ング部 8の X方 向及び、 Y方向の符号化したパターンから X , Yの位置が決まり、 チッ プ 1 0内の任意の設計座標で示される位置を、 決定することができる。 前述したようにもっと細かく X nの位置を定義したい場合はバタ一ン ュニッ 卜区間 Uの距離を短く し、 且つビッ ト幅を増やせば良い。 Y方向 についても同様である。 以上はパターンの組み合わせを 3、 パターンの 長さを 1 0段階として説明したがパ夕一ン組み合わせ数、 パターン長の 段階数は別の数値であっても構わない。 Similarly, if a pattern in which the coordinate position on the Y-axis coordinate is encoded is formed in the gardening section 8 with respect to the Y-axis, the encoding of the gardening section 8 in the X and Y directions is performed. The positions of X and Y are determined from the obtained pattern, and the position indicated by arbitrary design coordinates in the chip 10 can be determined. As described above, when it is desired to define the position of Xn more finely, it is only necessary to shorten the distance of the butterfly unit section U and increase the bit width. The same applies to the Y direction. In the above description, the pattern combination is 3 and the pattern length is 10 steps. However, the number of combinations of patterns and the number of steps of the pattern length may be different values.
ガ一 ドリ ング部を用いた第 3の実施例を、 第 8図に示す。 この方法は 第 5図に示したガー ドリ ング部を用いた第 1の実施例を改良したもので、 区間 Uは符号化されたパターンの 1ュニッ トを表す。 区間 Dはパターン のュニッ 卜の切れ目を示すデリ ミネ一夕一である。 区間 Bはビッ 卜パ夕 ーンである。 区間 Bの一部に図示したような矩形の切り込みパターンが 存在すれば 2進符号の 1 とし、 無ければ 0 とする。 FIG. 8 shows a third embodiment using a guiding part. This method is a modification of the first embodiment using the gardening unit shown in FIG. 5, and a section U represents one unit of the encoded pattern. Section D is a pattern This is a delineation showing the end of the unit. Section B is a bit pattern. If there is a rectangular cut pattern as shown in part of section B, it is set to binary code 1; otherwise, it is set to 0.
第 8図では、 矩形の切り込み幅を、 ビッ ト領域区間 Bの片側半分とし たが、 この幅は任意の一定距離であっても構わない。 デリ ミネ一ターと ' ビッ トパターンは各パターン幅 S 1 , S 2の違いで識別する。 第 8図で は S 1 : S 2 = 2 : 1 として表したが、 この比率は各パターンュニッ 卜 間で同一であれば任意である。 In FIG. 8, the cut width of the rectangle is set to one half of the bit area section B, but this width may be an arbitrary constant distance. The delimiter and the 'bit pattern are identified by the difference between the pattern widths S1 and S2. In FIG. 8, the ratio is expressed as S 1: S 2 = 2: 1, but this ratio is arbitrary as long as it is the same between each pattern unit.
ガー ドリ ング部を用いた第 1の実施例は一つのビッ 卜に深さ dを持た せたことにある。 dは 6段階で量子化されている。 すなわち最小単位距 離を wとすればパ夕一ン長 P nは The first embodiment using the guarding part is that one bit has a depth d. d is quantized in six steps. That is, assuming that the minimum unit distance is w, the path length P n is
d = w X n ( n = 0、 1、 2、 "ヽ 5 ) d = w X n (n = 0, 1, 2, "ヽ 5)
の 6段階の長さをとる。 これにより 1つのビッ トで 6進数を表現するこ とが可能となり、 6の 4乗すなわち 0から 1 2 9 5までの値を 1ュニッ 卜の長さはガー ドリ ング部を用いた第 1の実施例に比べて約半分で表現 できる。 座標値との対応は第 1の実施例と同様である。 Take the length of 6 steps. This makes it possible to represent a hexadecimal number with one bit, and the value of 6 to the fourth power, that is, a value from 0 to 1 295, is set to the first unit length using the gardening unit. It can be expressed by about half as compared with the embodiment. The correspondence with the coordinate values is the same as in the first embodiment.
以上、 ガー ドリ ング部を用いた実施例を 3つ述べたが、 この他の符号 化方法として磁気記録装置等に用いられている NRZ- I , MFM, MDM等のビッ トパターンの符号化方式等も適用可能である。 またガ一 ドリ ング部に付 されるパターンはガー ドリ ングの外側あるいは内側にあってもよい。 ま た、 形成されるパターンは矩形で説明したが、 検出可能ならその他の形 状、 例えば鋸波状、 三角形、 半円形等でも構わない。 In the above, three embodiments using the guarding section have been described. As another encoding method, the bit pattern encoding method such as NRZ-I, MFM, and MDM used in magnetic recording devices and the like is used. Etc. can also be applied. Further, the pattern provided to the girdering portion may be outside or inside the girdering. Further, although the pattern to be formed is described as a rectangle, any other shape may be used as long as it can be detected, for example, a sawtooth shape, a triangle, a semicircle, or the like.
次に、 第 2の実施例としてスクライブ領域 7を用いた場合を説明する。 第 9図は、 第 3図に示した半導体チップの左下コーナーを、 さらに拡大 図示したものである。 設計座標系が、 設計座標原点 3およびスクライブ センタ一で定義される X軸および Y軸で表されている。 8はガー ドリ ン グ部、 1 0は回路パターン形成領域である。 Next, a case where the scribe area 7 is used as a second embodiment will be described. FIG. 9 is an enlarged view of the lower left corner of the semiconductor chip shown in FIG. The design coordinate system is represented by the design coordinate origin 3 and the X and Y axes defined by the scribe center. 8 is Gardrin And 10, a circuit pattern forming area.
第 9図に示した斜線の矩形領域 1 1は、 ガー ドリ ング部を用いた前述 の実施例の、 ガー ドリ ング部の縁に形成されたパターンと同様の目的で 形成されたパターンである。 X軸、 および Y軸に対応する方向の矩形パ ターンの位置、 矩形パターンの大きさ、 矩形パターン間の距離を用いて X軸上の座標値あるいは Y軸上の座標値を符号化する。 The oblique hatched rectangular area 11 shown in FIG. 9 is a pattern formed for the same purpose as the pattern formed on the edge of the gardening portion in the above-described embodiment using the gardening portion. The coordinate value on the X axis or the coordinate value on the Y axis is encoded using the position of the rectangular pattern in the direction corresponding to the X axis and the Y axis, the size of the rectangular pattern, and the distance between the rectangular patterns.
スクライブ領域を用いた符号化の第 1の具体例を、 第 1 0図に示す。 区間 Uは、 符号化されたパターンの 1ュニッ トを表す。 区間 Dは、 パ夕 ーンのュニッ 卜の切れ目を示すデリ ミネ一ターである。 区間 Bは、 ビッ トパターンである。 区間 Bの一部に、 図示したような炬形の切り込みパ 夕一ンが存在すれば、 2進符号の 1 とし、 無ければ 0 とする。 第 1 0図 では矩形パターンの幅をビッ 卜領域区間 Bの片側半分としたが、 この幅 は任意の一定距離であつても構わない。 FIG. 10 shows a first specific example of encoding using a scribe area. Section U represents one unit of the encoded pattern. Section D is a delimiter that indicates a break in the unit in the palace. Section B is a bit pattern. If there is a sheep-shaped notch pattern as shown in part of section B, set it to binary code 1; otherwise, set it to 0. In FIG. 10, the width of the rectangular pattern is set to one half of the bit area section B, but the width may be any constant distance.
デリ ミネーターとビッ 卜パターンは、 各パターン幅 S 1 , S 2の違い で識別する。 第 1 0図では S 1 : S 2 = 2 : 1 として表したが、 この比 率は各パターンュニッ ト間で同一であれば任意である。 The delimiter and bit pattern are identified by the difference between each pattern width S 1 and S 2. In FIG. 10, S 1: S 2 = 2: 1 is shown, but this ratio is arbitrary as long as it is the same between each pattern unit.
第 1 0図において、 パターンュニッ 卜で符号化されたコ一 ドは次のよ うにして読みとる。 まず、 パターン幅 S 1のデリ ミネーターを検出しそ れに続く ビッ トパターンを読みとる。 第 1 0図では 9 ビッ ト幅で書いて あるがこのビッ ト幅も必要に応じて変更して構わない。 第 1 0図でのビ ッ トパターンは 1 0 1 1 1 0 0 1 0であり十進数の 3 7 0を表す。 In FIG. 10, the code coded by the pattern unit is read as follows. First, a delimiter with a pattern width of S1 is detected, and the subsequent bit pattern is read. In Fig. 10, it is written in 9-bit width, but this bit width may be changed as needed. The bit pattern in FIG. 10 is 101 1 110 0 10 and represents a decimal number of 3700.
9 ビッ トパターンでは 0から 5 1 1までを表すことができるので、 第 1 0図に示すように X方向で考えれば第 3図に示すチップ 1 0の X方向 サイズ X Sを 5 1 2以下で分割した適当な距離を X u n i t と定義し、 予めパターンユニッ トの開始する位置を第 9図に示すように X s t a r t として決めておけば、 第 1 0図でしめすパターンュニッ 卜の開始位置 X nは In the 9-bit pattern, 0 to 5 1 1 can be represented.Thus, considering in the X direction as shown in Fig. 10, the X direction size XS of chip 10 shown in Fig. 3 is 5 12 or less. If the appropriate divided distance is defined as X unit and the starting position of the pattern unit is determined in advance as X start as shown in Fig. 9, the starting position of the pattern unit shown in Fig. 10 X n
X n = X s t a r t + X u n i t x 3 7 O (101110010 : 2進表 現) X n = X st a r t + X u n i t x 3 7 O (101110010: binary representation)
で決定することができる。 Can be determined.
Y軸に関しても同様にしてスクライブ領域 7に Y軸座標上の座標位置 を符号化したパターンを形成しておけば、 スクライブ領域 7の X方向及 び、 Y方向の符号化したパターンから X, Yの位置が決まり、 回路パ夕 一ン形成領域 1 0内の任意の設計座標で示される位置を決定することが できる。 Similarly, if a pattern in which the coordinate position on the Y-axis coordinate is encoded is formed in the scribe area 7 for the Y axis, the X and Y encoded patterns in the X and Y directions of the scribe area 7 can be obtained. Is determined, and a position indicated by arbitrary design coordinates in the circuit pattern formation region 10 can be determined.
前述したようにもっと細かく X nの位置を定義したい場合はパターン ュニッ 卜区間 Uの距離を短く し、 且つビッ ト幅を増やせば良い。 Y方向 についても同様である。 As described above, when it is desired to define the position of Xn more finely, it is only necessary to shorten the distance of the pattern unit section U and increase the bit width. The same applies to the Y direction.
スクライブ領域を用いた第 2の実施例を、 第 1 1図に示す。 区間 Uは、 符号化されたパターンの 1ュニッ トを表す。 区間 Dは、 その長さで符号 化されているパターン P 1、 P 2、 P 3の切れ目を示すデリ ミネ一ター である。 P l、 P 2、 P 3で示されるパター ン長は、 1 0段階で量子化 されている。 すなわち、 最小単位距離を dとすれば、 パター ン長 P nは A second embodiment using a scribe area is shown in FIG. Section U represents one unit of the encoded pattern. Section D is a delimiter indicating a break between patterns P1, P2, and P3 encoded by the length. The pattern lengths indicated by Pl, P2, and P3 are quantized in 10 steps. That is, if the minimum unit distance is d, the pattern length P n is
P n = d X n ( n = l、 2、 -、 1 0 ) P n = d X n (n = l, 2,-, 1 0)
の 1 0段階の長さをとる。 よって P l、 P 2、 P 3の組み合わせ数 1 0 の 3乗すなわち 1 0 0 0通りの組み合わせが可能である。 Take the length of 10 steps. Therefore, the number of combinations of Pl, P2, and P3, which is the third power of 10th, that is, 10000 combinations is possible.
よって、 一つのデリ ミネーターから先三つのパターン長さ P 1、 P 2、 P 3を測定することによりそのデリ ミネ一ターの位置を特定できる。 た だし、 これを実現するためには任意のデリ ミネ一ターからはじまる次の 三つのパターン長の組み合わせはユニークであること、 すなわち 1チッ プ内の Xあるいは Yの 1軸方向に対応するスクライブ領域 7にあり、 か つ連続した三つのパターン長の組み合わせに重複はないことが条件であ る、 これを以下重複不可条件と呼ぶ。 Therefore, the position of the delimiter can be specified by measuring the first three pattern lengths P1, P2, and P3 from one delimiter. However, in order to achieve this, the combination of the following three pattern lengths starting from an arbitrary delimiter must be unique, that is, a scribe area corresponding to one X or Y axis direction in one chip. The condition is that there is no overlap in the combination of three consecutive pattern lengths. This is hereinafter referred to as a non-overlapping condition.
パターン長の決定にあたっては、 次のことを勘案する必要がある。 第一に、 パターン長は、 巡回的に決定されなければならない。 すなわ ち、 P 1 、 P 2、 P 3を決めれば、つぎのパターンの最初の二つは P 2、 P 3であり、 その条件のもとで、 前述の重複不可条件を満たしながら P 2、 P 3に続く次のパターン P 4を決定する必要がある。 In determining the pattern length, the following must be considered. First, the pattern length must be determined cyclically. That is, if P 1, P 2, and P 3 are determined, the first two of the following patterns are P 2 and P 3, and under these conditions, P 2 It is necessary to determine the next pattern P4 following P3.
第二に、 三つのパターン長を含む距離 Uは、 全体的に平均化されてい ることが必要である。 これは、 ある部分は(Pl,P2, P3) = (d,d, d)、 また別 の部分は(Pl , p2, p3) = ( 10d, 10d, 10d)であると、 座標位置の決定のための デリ ミネ一ターの分布に大きなばらつきが生じ、 実用上の不都合が生じ るためである。 Second, the distance U including the three pattern lengths needs to be averaged as a whole. This means that if one part is (Pl, P2, P3) = (d, d, d) and another part is (Pl, p2, p3) = (10d, 10d, 10d), the coordinate position is determined. This is because the distribution of the delimiters for the above-mentioned purpose greatly varies, which causes practical inconvenience.
以上の条件で決定された P 1 、 P 2、 P 3の組み合わせは、 実際の座 標値との対応が複雑になるので、 第 7図に示すように、 P l、 P 2、 P 3の組み合わせをインデックスとして、 座標値 Xを求められるように、 予めテーブルデータ化し記憶しておき、 使用時参照する。 The combination of P 1, P 2, and P 3 determined under the above conditions complicates the correspondence with the actual coordinate values. Therefore, as shown in FIG. 7, P 1, P 2, and P 3 The combination is used as an index, and table data is stored in advance so that the coordinate value X can be obtained.
Y軸に関しても、 同様にして、 スクライブ領域 7に、 Y軸座標上の座 標位置を符号化したパ夕一ンを形成しておけば、 スクライブ領域 7の X 方向及び、 Y方向の符号化したパターンから X, Yの位置が決まり、 回 路パターン形成領域 1 0内の任意の設計座標で示される位置を決定する ことができる。 Similarly, if a pattern in which the coordinate positions on the Y-axis coordinates are encoded is formed in the scribe area 7 for the Y axis, the scribe area 7 can be encoded in the X and Y directions. The positions of X and Y are determined from the obtained pattern, and the position indicated by arbitrary design coordinates in the circuit pattern formation region 10 can be determined.
前述したように、 もっと細かく X nの位置を定義したい場合は、 パタ —ンュニッ ト区間 Uの距離を短く し、 且つビッ 卜幅を増やせば良い。 Y 方向についても同様である。 As described above, when it is desired to define the position of X n more finely, it is only necessary to shorten the distance of the pattern unit unit U and increase the bit width. The same applies to the Y direction.
以上はパターンの組み合わせを 3、 パターンの長さを 1 0段階として 説明したがパターン組み合わせ数、 パターン長の段階数は別の数値であ つても構わない。 スクライブ領域を用いた第 3の実施例を、 第 8図に示す。 この方法は、 第 1 0図に示したスクライブ領域を用いた第 1の実施例を改良したもの で、 区間 Uは、 符号化されたパターンの 1ュニッ トを表す。 区間 Dは、 パターンのュニッ 卜の切れ目を示すデリ ミネ一ターである。 区間 Bは、 ビッ 卜パターンである。 区間 Bの一部に、 図示したような矩形の切り込 みパターンが存在すれば、 2進符号の 1 とし、 無ければ 0 とする。 In the above description, the combination of patterns is 3 and the length of the pattern is 10 levels. However, the number of pattern combinations and the number of levels of the pattern length may be different values. FIG. 8 shows a third embodiment using a scribe area. This method is a modification of the first embodiment using the scribe area shown in FIG. 10, and a section U represents one unit of the encoded pattern. Section D is a delimiter indicating a break in the unit of the pattern. Section B is a bit pattern. If a rectangular cut pattern as shown in the figure exists in a part of section B, the binary code is set to 1. Otherwise, it is set to 0.
第 1 2図では、 矩形の切り込み幅をビッ 卜領域区間 Bの片側半分とし たが、 この幅は任意の一定距離であっても構わない。 デリ ミネ一ターと ビッ 卜パ夕—ンは各パターン幅 S 1 , S 2の違いで識別する。 第 1 2図 では S 1 : S 2 = 2 : 1 として表したが、 この比率は各パターンュニッ ト間で同一であれば任意である。 In FIG. 12, the cut width of the rectangle is set to one half of the bit area section B, but this width may be an arbitrary constant distance. The delimiter and the bit pattern are identified by the difference between the pattern widths S 1 and S 2. In FIG. 12, S1: S2 = 2: 1 is shown, but this ratio is arbitrary as long as it is the same between each pattern unit.
ガー ドリ ング部を用いた第 1の実施例は、 一つのビッ 卜に深さ dを持 たせたことにある。 dは、 6段階で量子化されている。 すなわち、 最小 単位距離を wとすれば、 パターン長 P nは The first embodiment using the gardening part is that one bit has a depth d. d is quantized in six stages. That is, if the minimum unit distance is w, the pattern length P n is
d = w X n ( n = 0、 l、 2、 "-、 5 ) d = w X n (n = 0, l, 2, "-, 5)
の 6段階の長さをとる。 これにより、 1つのビッ 卜で 6進数を表現する ことが可能となり、 6の 4乗すなわち 0から 1 2 9 5までの値を、 1ュ ニッ 卜の長さは、 スクライブ領域を用いた第 1の実施例に比べて、 約半 分で表現できる。 座標値との対応は、 スクライブ領域を用いた第 1の実 施例と同様である。 Take the length of 6 steps. This makes it possible to represent a hexadecimal number with one bit. The value of 6 to the fourth power, that is, a value from 0 to 1295, and the length of one unit can be expressed by the first It can be expressed in about half as compared with the embodiment. The correspondence with the coordinate values is the same as in the first embodiment using the scribe area.
以上、 スクライブ領域を用いた実施例を 3つ述べたが、 この他の符号 化方法として、 磁気記録装置等に用いられている NRZ- I , MFM,M 等の、 ビッ 卜パターンの符号化方式等も、 適用可能である。 また、 形成される パターンは、 矩形で説明したが、 検出可能ならその他の形状、 例えば鋸 波状、 三角形、 半円形等でも構わない。 The three embodiments using the scribe area have been described above. Other coding methods include bit pattern coding methods such as NRZ-I, MFM, and M used in magnetic recording devices and the like. Etc. are also applicable. Further, the pattern to be formed has been described as a rectangle, but any other shape, such as a sawtooth shape, a triangle, or a semicircle, may be used as long as it can be detected.
次に、 第 3の実施例として、 ガ一 ドリ ング部 8 と回路パターン形成領 域 1 0の間の空白領域 9を用いた場合を説明する。 第 1 3図は、 第 3図 に示した半導体チップの左下コーナーを、 さらに拡大図示したものであ る。 設計座標系が、 設計座標原点 3、 および、 スクライブセンタ一で定 義される X軸および Y軸で表されている。 8はガー ドリ ング部、 1 0は 回路パターン形成領域、 9はガー ドリ ング部 8 と回路パターン形成領域. 1 0の間の空白領域である。 Next, as a third embodiment, the galling portion 8 and the circuit pattern formation area The case where the blank area 9 between the areas 10 is used will be described. FIG. 13 is a further enlarged view of the lower left corner of the semiconductor chip shown in FIG. The design coordinate system is represented by the design coordinate origin 3 and the X and Y axes defined by the scribe center. Reference numeral 8 denotes a guard portion, 10 denotes a circuit pattern forming region, and 9 denotes a blank region between the guard portion 8 and the circuit pattern forming region.
第 1 3図に示した斜線の矩形領域 1 2は、 スクライブ領域を用いた前 述の実施例に記載のパターンと同様の目的で形成されたパターンである c X軸、 および Y軸に対応する方向の矩形パターンの位置、 矩形パターン の大きさ、 矩形パターン間の距離を用いて X軸上の座標値あるいは Y軸 上の座標値を符号化する。 A hatched rectangular area 12 shown in FIG. 13 corresponds to c X-axis and Y-axis, which are patterns formed for the same purpose as the pattern described in the above embodiment using the scribe area. Using the position of the rectangular pattern in the direction, the size of the rectangular pattern, and the distance between the rectangular patterns, the coordinate value on the X axis or the coordinate value on the Y axis is encoded.
空白領域 9領域を用いた実施例における符号化されたパターンは、 ス クライブ領域 7で開示したパターンと同一のものが適用できる。 第 1 3 図における X s t a r tは、 スクライブ領域 7で開示したスクライブ領 域を用いた第 1の実施例における X s t a r tに対応するものである。 以上、 位置情報が符号化されたパターンがガ一 ドリ ング部に形成され る場合、 スクライブ領域に形成される場合、 スクライブ領域とチップの 間に形成される場合について述べたが、 前記位置情報が符号化されたパ ターンは、 目視観察時において、 最上層の部分あるいは、 光学的あるい は電子線を用いた方法によって、 超音波を用いた方法により観察可能な 層に形成されていれば良い。 The same pattern as the pattern disclosed in the scribe area 7 can be applied to the encoded pattern in the embodiment using the 9 blank areas. X start in FIG. 13 corresponds to X start in the first embodiment using the scribe area disclosed in the scribe area 7. As described above, the case where the pattern in which the position information is encoded is formed in the corner portion, the case where the pattern is formed in the scribe region, and the case where the pattern is formed between the scribe region and the chip have been described. The encoded pattern only needs to be formed on the uppermost layer or a layer that can be observed by a method using an optical or an electron beam and a method using an ultrasonic wave during visual observation. .
以上、 半導体チップに形成される位置情報を符号化したパターンにつ いて述べたが、 このパターンを、 ゥヱーハ上の各チップの前述した所定 の位置につく り込むためには、 露光工程のステツパに用いられるレチク ルにもそれに対応する位置に形成されていなければならない。 產業上の利用可能性 As described above, the pattern in which the position information formed on the semiconductor chip is encoded has been described. In order to form this pattern at the above-described predetermined position of each chip on the wafer, a step in the exposure process is required. The reticle used must also be formed in a corresponding position. 上 の Business availability
以上説明したよう に、 本発明によれば、 チップ内の位置が設計座標値 で分かるように、 設計座標系の各座標軸上の位置を符号化したパターン を、 チップ上に設けたので、 そのパターンを観察して、 画像処理によつ てパターンを抽出し、 符号化されたパターン情報をデコ一ディ ングして 各座標軸上の位置情報を読み出すことにより、 チップの位置を正確に求 めることが可能となる。 As described above, according to the present invention, a pattern that encodes the position on each coordinate axis of the design coordinate system is provided on the chip so that the position in the chip can be identified by the design coordinate value. Observing the pattern, extracting the pattern by image processing, decoding the coded pattern information, and reading out the position information on each coordinate axis to obtain the chip position accurately Becomes possible.
これにより、 フェイルビッ ト検査のような、 欠陥位置が設計データで 指定される検査の結果を用いて、 欠陥原因を観察 ·解析するために目視 確認するような場合において、 試料を C A Dに接続されたステージ上に セッ ト し C A Dデータを用いて試料の位置決めをするこ とによ り、 観 察 ·解析したい欠陥位置を、 容易に正確な位置出しを行うこ とができ、 観察の工数を低減することが可能となる。 This allows the specimen to be connected to CAD in cases such as fail-bit inspection, where the defect location is specified by design data and the defect cause is visually checked to observe and analyze the cause. By setting the sample on the stage and positioning the sample using CAD data, the defect position to be observed and analyzed can be easily and accurately located, reducing the number of man-hours for observation. It becomes possible.
また、 本発明を適用した半導体チップを半導体装置の生産工程に適用 することにより、 半導体チップの最終的な機能欠陥の原因となる欠陥位 置を短時間に観察することが可能となるので、 プロセス改善のフィー ド バックが速くなることも期待できる。 In addition, by applying the semiconductor chip to which the present invention is applied to the production process of a semiconductor device, it becomes possible to observe a defect position that causes a final functional defect of the semiconductor chip in a short time, thereby making it possible to process the semiconductor chip in a short time. It is expected that the feedback for improvement will be faster.
Claims
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| JP8/165551 | 1996-06-26 | ||
| JP16555196A JPH1012527A (en) | 1996-06-26 | 1996-06-26 | Semiconductor chips and semiconductor manufacturing reticles |
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| EP2309539B1 (en) | 2009-10-09 | 2018-12-05 | STMicroelectronics Srl | Indexing of electronic devices using markers with different weightings |
| ITMI20101415A1 (en) * | 2010-07-29 | 2012-01-30 | St Microelectronics Srl | TRACEABLE INTEGRATED CIRCUITS AND RELATED PRODUCTION METHOD |
| JP5893287B2 (en) * | 2011-08-10 | 2016-03-23 | ルネサスエレクトロニクス株式会社 | Semiconductor device and substrate |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04340214A (en) * | 1990-12-14 | 1992-11-26 | Fujitsu Ltd | Manufacture of semiconductor device |
| JPH05313350A (en) * | 1992-04-01 | 1993-11-26 | Nec Corp | Photomask for semiconductor device |
| JPH0845800A (en) * | 1994-07-29 | 1996-02-16 | Nec Yamaguchi Ltd | Semiconductor wafer and its discrimination method |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023144548A1 (en) * | 2022-01-31 | 2023-08-03 | Cambridge Enterprise Limited | A machine-readable marker and identification method |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH1012527A (en) | 1998-01-16 |
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