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WO1995018455A1 - Thermistance a corps fritte et dispositif a thermistance utilisant ce corps - Google Patents

Thermistance a corps fritte et dispositif a thermistance utilisant ce corps Download PDF

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Publication number
WO1995018455A1
WO1995018455A1 PCT/JP1994/002266 JP9402266W WO9518455A1 WO 1995018455 A1 WO1995018455 A1 WO 1995018455A1 JP 9402266 W JP9402266 W JP 9402266W WO 9518455 A1 WO9518455 A1 WO 9518455A1
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WO
WIPO (PCT)
Prior art keywords
thermistor
sintered body
metal
crystal phase
metal component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP1994/002266
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English (en)
Japanese (ja)
Inventor
Hirofumi Hajime
Shuichi Takeda
Akio Konishi
Hideki Shishiba
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Komatsu Ltd
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Komatsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Komatsu Ltd filed Critical Komatsu Ltd
Priority to DE4480337T priority Critical patent/DE4480337T1/de
Priority to GB9612686A priority patent/GB2300520A/en
Publication of WO1995018455A1 publication Critical patent/WO1995018455A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/04—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient
    • H01C7/042—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient mainly consisting of inorganic non-metallic substances
    • H01C7/043—Oxides or oxidic compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/02—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient
    • H01C7/022—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient mainly consisting of non-metallic substances
    • H01C7/023—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient mainly consisting of non-metallic substances containing oxides or oxidic compounds, e.g. ferrites

Definitions

  • the present invention relates to a sintered body and a sintered apparatus using the same.
  • the present invention relates to a thermistor sintered body and a thermostat using the same, and in particular, to a chip type thermostat, a disk type thermostat, and a thermometer which require high accuracy and high reliability as a temperature sensor.
  • the present invention relates to an oxide semiconductor sintered body for a thermistor having a negative temperature coefficient of resistance, which is used for a crystal oscillation circuit for precision temperature compensation, an SMT type thermistor used for a surface mount circuit, and the like.
  • oxide semiconductors having a negative resistance temperature characteristic and having a negative resistance temperature characteristic include manganese ( ⁇ ), cobalt (Co), nickel (N i), copper ( It is an oxide sintered body consisting mainly of a cubic spinel type crystal phase of two or more components containing Cu), iron (Fe), etc., and further has a resistance value and a temperature coefficient of resistance value (hereinafter referred to as B It is known that aluminum or the like is added for the purpose of adjusting the constant. This B constant is expressed by the following equation.
  • a cubic spinel-type crystal phase is used for thermistor oxynitride sintered body with a specific resistance of several ⁇ cm to several k ⁇ cm to adjust its resistance and B constant.
  • the cubic spinel-type crystal phase is liable to undergo phase transformation to NaC1-type cubic during the process of undergoing heat history, such as the electrode baking process including the sintering process, and causes a reduction in the characteristic value yield.
  • the present invention has been made in view of the above-mentioned circumstances, and a single-component system is capable of developing a wide range of characteristics, has a high characteristic value yield, is highly accurate, and has a high-temperature storage reliability and is highly reliable.
  • the purpose is to provide the body.
  • a first feature of the present invention is that in a thermistor oxide semiconductor having a negative resistance-temperature characteristic, the constituent metal main component is composed of Mn and Co, and Cu and Ti are further represented by moles of a metal component. % To 0.1% to 24%.
  • the contents of the metal main components Mn and Co constituting the thermistor sintered body are 30 ⁇ Mn ⁇ 52, 46 ⁇ Co
  • Mn which is a metal main component
  • the content of Cu and Ti simultaneously added to Co should be 0.04 Cu ⁇ 14, 0.06 ⁇ Ti ⁇ 10 in terms of mol% with respect to the metal component, respectively.
  • a second feature of the present invention is that, in the thermistor sintering suspension in which the main metal component is composed of Mn and Co and Cu and Ti are added, the sintering suspension is mainly cubic subbing. Na-Cl-type cubic crystal phase whose main metal component is Co, the cubic crystal phase whose main component is Cu, as well as the main phase of Cu At least one of the monoclinic crystal phases or the respective second phase crystal phases.
  • the third feature of the present invention is that, as a metal component, Mn and Co are main components, and Cu and Ti are 0.1 to 40% by weight in total (0.1 to 44.4% for mol%). %) In the thermistor sintered body.
  • the content of the metal components Mn and Co is 24 ⁇ Mn ⁇ 50 (23.2-52.3% for mol%) and 36 ⁇ Co in weight% with respect to the metal component, respectively.
  • the sintered body is formed into a disk-shaped or chip-shaped body to form a thermistor body, and electrodes are formed on at least one pair of both end edges of the thermistor body.
  • the main component of the metal of the thermistor sintered body is composed of Mn and Co, and Cu and Ti are further contained in an amount of ⁇ .1 to 24% in terms of mol% total of the metal component.
  • the contents of the metal main components Mn and Co constituting the sintered body of the thermistor are 30 ⁇ Mn ⁇ 52 and 46 ⁇ Co ⁇ 65, respectively, in mol% with respect to the metal component. .
  • the content of Cu and Ti simultaneously added to Mn and Co, which are the main components of the metal is in mol% of the metal component.
  • the main metal component is composed of Mn and Co
  • the sintered body in the thermistor sintered body, is mainly cubic spinel type.
  • a thermistor sintered body made of an oxide semiconductor for a thermistor having a negative resistance temperature characteristic is formed into a disk shape or a chip shape to form a thermistor body.
  • Mn and Co are main components as constituent metal components of the thermistor sintered body; And Ti in a total amount of 1 to 40% by weight.
  • Mn is a metal component, the content of C o, 24 ⁇ Mn ⁇ 50 in weight percent about the metal components respectively, the c present inventors, which is a 36 ⁇ C o ⁇ 60 In a sintered body composed of Mn, Co, Cu, and Ti, various experiments were repeated with changing the composition ratio, and as a result, the specific resistance increased greatly with the increase of Ti. The B constant was found to increase only slightly.
  • the structure of the thermistor sintered body is from a single-phase structure of a cubic spinel to a structure close to a single-phase structure, so that the variation in resistance value, B constant, coefficient of thermal expansion, and the like is extremely large. It is possible to provide a small and stable thermistor with high accuracy and high reliability at high temperature storage.
  • a cubic spinel-type single crystal phase or a cubic spinel-type single crystal phase is mainly formed by selecting the sintering temperature, and
  • the second phase is a NaC1-type cubic crystal phase mainly composed of Co, a cubic crystal phase mainly composed of Cu, and a monoclinic crystal phase mainly composed of Cu. It is possible to obtain a sintered body structure containing at least one of each of the above or each of the second phase crystal phases.
  • the yield and precision of resistance can be improved extremely well.For example, it is necessary to suppress the fluctuation of the characteristic value to within 1%. Even at a certain stand, almost all falls within this range without the necessity of property selection, so that mass productivity can be improved. However, for example, in high-temperature storage reliability of 125 ° C, depending on the composition of Mn, Co, Cu, and Ti selected, at least the both edges of this sintered body of thermistor body are charged. It is necessary to allow a resistance change rate of several percent in a thermistor device formed with poles.
  • the second phase is a Na C 1 type cubic crystal phase whose main metal component is Co as the second phase, and Cu is the main component.
  • Thermistor having a sintered body structure containing at least one of the cubic crystal phase and the monoclinic crystal phase mainly composed of Cu, or at least two of the respective second phase crystal phases.
  • the rate of change of the resistance value it is possible to control the rate of change of the resistance value to 1% or less when left at a high temperature of 125 ° C. This is because the cubic spinel-type crystal phase contains the above-mentioned crystal phase as the second phase, so that the second phase enters the crystal grain interface to form a stable structure, and the resistance change rate It is thought that it will be possible to keep the value small.
  • the specific resistance does not change significantly, but the B constant can be changed significantly.At the same time, the specific resistance value increases with the increase in the amount of Ti. We found that the B constant increased only slightly, but we found that the B constant increased only slightly.We focused on this fact, and as a metal component, Mn and Co were the main components, and Cu and Ti were 0.1 in total. By containing up to 40% by weight, a high yield in resistance value and B constant was achieved, and high-temperature storage reliability at a temperature of 100 ° C or lower could be obtained.
  • FIG. 1 is a flowchart showing a process of manufacturing a thermistor sintered body according to an embodiment of the present invention.
  • FIG. 2 is a diagram of a process of manufacturing a thermistor using the thermistor sintered body.
  • FIG. 3 is a quasi-ternary phase diagram showing a metal component mole% ratio composition region of the thermistor sintered body of the present invention.
  • FIG. 4 is a manufacturing process diagram of an SMT thermistor using a thermistor sintered body according to the third embodiment of the present invention.
  • FIG. 5 is an SMT thermistor using the thermistor sintered body according to the third embodiment of the present invention.
  • FIG. 6 is a diagram illustrating a metal component weight% ratio composition of the thermistor sintered body according to the fourth embodiment of the present invention. Pseudo-ternary phase diagram showing the region Best mode for carrying out the invention
  • trimanganese manganese oxide ( ⁇ ⁇ 0 4 ), cobalt oxide (C ⁇ 0), copper oxide (Cu 0), and titanium oxide (Ti 09 ) were weighed and mixed in a ball mill for 24 hours. After that, it was dehydrated and dried (step 1).
  • the dried powder is maintained at 850 to 950 ° C (900 ° C in this case) under atmospheric pressure and calcined for 2 hours.
  • the calcined powder is ground again with a ball mill for 24 hours, Water-dried material was used as raw material powder (Step 2).
  • each metal component was adjusted in the weighing step of Step 1 so as to have a molar percentage composition ratio of Mn 40.3 / Co50.7 / Cu3.0 / Ti6.0.
  • Step 3 1 wt% of polyvinyl alcohol was added to the raw material powder thus obtained, and molded into a disk having a diameter of 5 mm and a thickness of 1 mm using a mold.
  • Step 4 the molded body was baked by heating at a temperature of 1200 ° C. for 2 hours under a heating schedule capable of sufficiently removing polyvinyl alcohol.
  • Electrodes were formed on both end surfaces of the thus obtained thermistor sintering plate using an Ag electrode paste, and a disk-shaped sampler was formed as shown in the process diagram in Fig. 2. — Miss evening formed.
  • the resistance value of the disk-shaped sample obtained in this way was measured at 25 ° C, the specific resistance value was calculated from the geometric shape, and the resistance values at 25 ° C and 50 ° C were further calculated.
  • the B constant was calculated.
  • the resistance R 25 at 25 ° C and the B constant B 25/5 () at 25 ° C and 50 ° C were measured for a total of 1,000 disk-shaped thermistors on which electrodes were formed.
  • Variations in the resistance values R 25 and B constant were sufficient for mass production of high precision thermistors.
  • a high-temperature reliability test was conducted in which the disc-shaped thermistor with the electrodes formed was left in a thermostat at 125 ° C for 10 hours.
  • the change rate of the resistance value R 25 characteristics and sampling the total number 5 ⁇ pieces from samples of the examination of B constant optionally, 125 ° C, 1000 hours left at high temperature before and after the resistance change rate and the B constant evaluated.
  • the rate of change of the resistance value and the rate of change of the B constant were determined by the following formula.
  • the resistance value and B constant of the obtained disk-shaped thermistor are extremely accurate, and in addition, the reliability at high temperature storage is high, and the stability is excellent. Investigate the cross-sectional structure of the sintered body and the crystal phase of the sintered body by X-ray diffraction.
  • the present sintered ceramics consisted of a cubic spinel-type crystal phase and a NaCl-type cubic-type crystal phase as the second phase.
  • the main component of the second phase metal element was analyzed by an electron probe microanalyzer (EPMA). As a result, it was found to be a NaC1-type cubic crystal phase mainly composed of Co.
  • each metal component was adjusted in the weighing step of Step 1 so as to have a molar percentage composition ratio of Mn 49.0 / Co 47.4 / Cu2.4 Til.2.
  • Step 3 1 wt% of polyvinyl alcohol was added to the raw material powder obtained in this manner, and the mixture was molded into a cylindrical shape having a diameter of 3 Ommx and a thickness of 15 mm using a cold isostatic press (CHP). After degreasing according to a heating schedule that can sufficiently remove polyvinyl alcohol, baking was performed at 1250 for 1 hour. (Step 3).
  • the sintered body is again 0.85 mm x O. 85 mni by dicer. After cutting, a chip-shaped thermistor was prepared.
  • Resistance change rate (R 25 -R 25 ) / R 25 ) is within ⁇ 0.5%
  • B constant change rate ( ⁇ ⁇ 000) — B (0)) / B ° is within ⁇ 0.2%
  • the cross-sectional structure of the sintered body of the thermistor and the crystal phase of the sintered body by X-ray diffraction were examined.As a result, the sintered body consisted of a cubic spinel type crystal phase and a Na C 1 type cubic type crystal phase as the second phase. It became clear.
  • the main component of the second phase metal element was analyzed by an electron probe microanalyzer (EPMA). As a result, it was found to be a NaC1-type cubic crystal phase mainly composed of Co.
  • the composition of each metal component was changed so that in Examples 1 and 2, After the sintering raw material powder was prepared in the same manner as shown, 10 wt% methylcellulose was added as a binder to the raw material powder thus obtained, and the mixture was sufficiently mixed to prepare a compound. Thereafter, a green sheet having a thickness of 0.6 to 1.1 mm was formed by an extrusion molding method.
  • Co 1 Co main component Na C 1 type cubic phase
  • the green sheet is cut into an appropriate size, degreased using a heating schedule capable of sufficiently removing the methylcellulose binder, and then 1 to 1300. Baking for 1-3 hours at C. (Step 3).
  • a glass paste was screen-printed on both sides of the sheet-like fired body 1u (Fig. 4 (a)) obtained in this way, and baked at 80 CTC for 10 minutes to form the glass protective layers 3a and 3b. (See Fig. 4 (b)).
  • the sheet-like fired body 1u after the glass baking was cut into a strip of about 1.8mm by dicer as shown in Fig. 4 (c). Ag electrode 2 and bake it at 750 ° C for 10 minutes.
  • the Ni the plating layer 4 and the solder plating were applied to the strip-shaped thermistor structure on which the Ag electrode was baked by using the electric plating method.
  • Layer 5 was formed (FIG. 4 (e)).
  • the strip-shaped thermistor structure having the Ag electrode 2, the Ni plating layer 4, and the soldering layer 5 formed in this way is further cut by a dicer into a chip having a width of 1.15 to 1.2. (See Fig. 4 (f)) to create SMT thermistors with electrodes formed on at least a pair of both edges of the sintered body of thermistor (Figs. 5 (a) and (b)). See).
  • the resistivity and the variation in resistance at 25 ° C in the thermistor thus obtained, the B constant at 25 ° C and 50 ° C, and 25 ° C in the high-temperature storage reliability test at 125 ° C for 1000 hours Rate of change of resistance value, 25 CZ50.
  • the rate of change of the B constant of C was evaluated. Variations in resistance were evaluated at ⁇ 3% and ⁇ 1% resistance yields relative to the target value to determine whether mass production was possible.
  • the results obtained are shown in Table 1 for each thermistor composition.
  • Co is the main metal as the second phase crystal phase with the cubic spinel-type crystal phase as the structure of the sintered crystal phase.
  • N a C 1-type cubic crystal phase as the component, cubic phase with Cu as the main metal component, and / or monoclinic crystal phase with Cu as the main metal component or the second phase of each
  • the SMT thermistors of No. 11 to No. 12 are composed of a single phase of a cubic spinel-type crystal structure. % As good as%, it has achieved zero reliability.
  • the target resistance value yield which is one of the criteria for determining mass productivity, is ⁇ 3%
  • the thermistor sintering time according to the present invention is independent of the crystal phase of the sintered body.
  • the cubic spinel single phase is higher than 9 °%
  • the pedestal containing the cubic spinel phase and at least one second phase is higher than 7 °% and lower than 80%, which is extremely good. Met.
  • the mol% of the Co metal component is 46- If the value is out of 65, the high-temperature storage reliability (resistance change rate, B-constant change rate) will decrease even if the target resistance value yield is high.
  • FIG. 3 shows a desirable composition area (gray area) of the constituent metal component mol% of the sintered body for a thermistor of the present invention in order to improve the accuracy of the thermistor product and improve the yield and the reliability at high temperature storage. With this composition range, a highly reliable thermistor can be obtained.
  • a binder was added to the raw material powder thus obtained, mixed, and then dried again (step 3).
  • the raw material powder is formed into a pellet having a diameter of 5 mm and a thickness of lmm, and the obtained pellet is heated at a temperature of 1,000 to 1300 ° C for 1 to 4 hours. Firing was performed (Step 4).
  • a disk-type thermistor was formed using the pellets of the thus obtained sintered body of thermistor as shown in FIG.
  • the specific resistance of the disk-type thermistor obtained in this way was calculated from the R 25 measured at 25 ° C and the geometric shape, and the B constant was calculated from the resistances at 25 ° C and 50 ° C. Calculated.
  • the composition ratio of Mn, Co, Ti, and Cu was varied in the pellet formation process shown in Fig. 1, the resistance was measured for each, and the specific resistance and the ⁇ constant were calculated.
  • the results are shown in Table 3.
  • the target resistance value after sintering ⁇ 1% yield is a conventional example (No. 115, 116) and a comparative example in the present invention (No. 112 to 114, 117, 118)
  • the yield of the sintered body of the thermistor according to the present invention is remarkably high, and has a great effect on the improvement of the yield of the product and the improvement of the reliability of high temperature storage at 100 ° C or lower in addition to the improvement of the accuracy.
  • Table 3 Composition ratio of metal components (% by weight) Specific resistance B constant
  • sample No. 101, 102, 105 has a structure consisting of a NaC1-type cubic phase with a cubic spinel-type crystal phase as the main component and a second phase with Co as the main metal component.
  • both the high-temperature storage reliability and the target resistance value yield ( ⁇ 1%) were sufficient for mass production, and showed good results.
  • Sample No. 1 ⁇ 8 mainly consists of a cubic spinel-type crystal phase, and as the second phase, a Na C 1-type cubic phase with Co as the main metal component, and a cubic phase with Cu as the main metal component.
  • No. 103, No. 104, No. 106, No. 107, No. 10, No. 110, No. 111 are single-phase cubic spinel-type crystal phases.
  • the target resistance yield ( ⁇ 1%) is high, and the reliability of high temperature storage at 9 CTC slightly decreases.
  • Samples Nos. 112 to 118 show the results of a disk thermistor deviating from the composition range of the present invention.
  • the target resistance value ⁇ 1% yield is remarkably reduced, and the high-temperature storage reliability is also reduced.
  • the target resistance yield was high because the cubic spinel-type crystal phase was particularly unstable in the heat treatment process including the firing step, and was transformed into the tetragonal spinel-type crystal phase. It seems to have declined.
  • FIG. 6 shows a desirable metal component weight% composition range (gray portion) of the thermistor sintered body of the present invention for improving the characteristic value yield and increasing the integration of the product.
  • the target value characteristic yield is high, the high-temperature rule-of-law reliability of 100% or less can be secured, and thermistors can be obtained with high mass productivity.
  • This sintered ceramic body is a laminated ceramic body in which electrodes are interposed between a disk-shaped ceramic body, a chip-shaped thermistor body, a surface-mounted chip thermistor, and a thermistor sintered body. It can be applied to miss evenings. Industrial applicability
  • the crystal structure is stable, the variation in the electrical characteristics among the elements can be suppressed, and the environmental resistance, especially the characteristics and stability at high temperatures, can be improved. Because it is excellent, it is extremely effective as a material for thermistors for various temperature sensors or for temperature compensation for circuits that require high accuracy and high reliability.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Ceramic Engineering (AREA)
  • Thermistors And Varistors (AREA)
  • Compositions Of Oxide Ceramics (AREA)

Abstract

La présente invention concerne un corps de thermistance à frittage de haute précision, doté de caractéristiques stables. Un oxyde semi-conducteur pour thermistance, caractérisé par une composante résistance/température négative, est constitué principalement de manganèse et de cobalt. Il contient en proportion molaire 0,1 % à 24 % de cuivre et de titane par rapport à la teneur totale en composants métalliques.
PCT/JP1994/002266 1993-12-27 1994-12-27 Thermistance a corps fritte et dispositif a thermistance utilisant ce corps Ceased WO1995018455A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
DE4480337T DE4480337T1 (de) 1993-12-27 1994-12-27 Thermistor-Sinterkörper und diesen verwendende Thermistorvorrichtung
GB9612686A GB2300520A (en) 1993-12-27 1994-12-27 Thermistor

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP5/332409 1993-12-27
JP33240993 1993-12-27

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WO1995018455A1 true WO1995018455A1 (fr) 1995-07-06

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PCT/JP1994/002266 Ceased WO1995018455A1 (fr) 1993-12-27 1994-12-27 Thermistance a corps fritte et dispositif a thermistance utilisant ce corps

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GB (1) GB2300520A (fr)
WO (1) WO1995018455A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102171774B (zh) * 2008-10-03 2013-01-02 三菱综合材料株式会社 热敏电阻元件的制造方法和热敏电阻元件
CN106828021A (zh) * 2017-03-03 2017-06-13 镇江海姆霍兹传热传动系统有限公司 汽车加热器温度传感器

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102290174A (zh) * 2005-02-08 2011-12-21 株式会社村田制作所 表面安装型负特性热敏电阻
CN110223812A (zh) * 2019-06-19 2019-09-10 唐山恭成科技有限公司 一种片式ntc热敏电阻及制备方法

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Publication number Priority date Publication date Assignee Title
JPS341239B1 (fr) * 1956-11-28 1959-03-07
JPS52140893A (en) * 1976-05-19 1977-11-24 Matsushita Electric Ind Co Ltd Element for detecting temperature of moisture
JPH05283205A (ja) * 1992-03-31 1993-10-29 Mitsubishi Materials Corp チップ型サーミスタ及びその製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS341239B1 (fr) * 1956-11-28 1959-03-07
JPS52140893A (en) * 1976-05-19 1977-11-24 Matsushita Electric Ind Co Ltd Element for detecting temperature of moisture
JPH05283205A (ja) * 1992-03-31 1993-10-29 Mitsubishi Materials Corp チップ型サーミスタ及びその製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102171774B (zh) * 2008-10-03 2013-01-02 三菱综合材料株式会社 热敏电阻元件的制造方法和热敏电阻元件
CN106828021A (zh) * 2017-03-03 2017-06-13 镇江海姆霍兹传热传动系统有限公司 汽车加热器温度传感器

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GB2300520A (en) 1996-11-06
DE4480337T1 (de) 1996-12-19
GB9612686D0 (en) 1996-08-21

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