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TWI287853B - Method and apparatus for depositing a metal film on a substrate - Google Patents

Method and apparatus for depositing a metal film on a substrate Download PDF

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Publication number
TWI287853B
TWI287853B TW090109943A TW90109943A TWI287853B TW I287853 B TWI287853 B TW I287853B TW 090109943 A TW090109943 A TW 090109943A TW 90109943 A TW90109943 A TW 90109943A TW I287853 B TWI287853 B TW I287853B
Authority
TW
Taiwan
Prior art keywords
substrate
module
acid
metal film
film layer
Prior art date
Application number
TW090109943A
Other languages
English (en)
Inventor
Maximilian A Biberger
Paul E Schilling
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Application granted granted Critical
Publication of TWI287853B publication Critical patent/TWI287853B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H01L21/67167—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers surrounding a central transfer chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C23C14/021—Cleaning or etching treatments
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
    • H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02101—Cleaning only involving supercritical fluids
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67184—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the presence of more than one transfer chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76814—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics post-treatment or after-treatment, e.g. cleaning or removal of oxides on underlying conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/906—Cleaning of wafer as interim step

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Weting (AREA)
  • Physical Vapour Deposition (AREA)
  • Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)

Description

1287853 A7 B7 五、發明説明（1 ) 〔發明領域〕 ：---·—^^衣-- (請先閱讀背面之注意事項再填寫本頁) 本發明係關於膜層的沉積的領域。更特定地，本發明 係關於沉積膜層於一基材上的領域，其中一早先的處理步 驟包括反吸收或預淸潔該基材。 〔發明背景〕 在半導體製程中沉積一金屬膜層通常在該金屬膜層的 沉積之前都需要反吸收及預淸潔步驟。該反吸收及預淸潔 步驟可確保該金屬膜層對於一基材有良好的粘著性且亦在 基材金屬與金屬膜層之間提供較佳的接觸電阻。 在前技中，該反吸收步驟，該預淸潔步驟，及金屬膜 層的沉積是在一群串工具中進行的，使得基材在反吸收或 預淸潔步驟與該金屬膜層的沉積之間不會曝露於大氣中。 經濟部智慧財產局員工消費合作社印製 前技的反吸收步驟在真空中對該基材加熱用以將該基 材去氣（degas)。藉由在真空中加熱該基材，被吸收於該基 材的表面中或被吸收至該基材內的物質可從該基材中被去 除。典型的處理條件包括1(Τ3托爾（Torr)或更高的真空，及 介於200至400 °C之間的溫度。通常，較高的溫度被使用， 以縮短處理時間，對於較高的溫度而言，處理時間大致上 是在30秒至60秒之間。 前技的預淸潔步驟將該基材曝露於離子轟擊中，其通 常被稱爲一濺射蝕刻預淸潔。在該濺射蝕刻預淸潔中，氬 離子，氫離子，氨離子，或它們的組合，及電子形成一電 漿，其轟擊該基材的表面用以將一薄的物質層濺射掉。典 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -4
1287853 五、發明説明（2 ) (請先閱讀背面之注意事項再填寫本頁) 型地，在半導體製程中，一蝕刻步驟在該金屬膜層的沉積 之前。該蝕刻步驟形成溝渠及介電孔於該基材內到達一底 下的金屬層。在蝕刻步驟之後，因爲該基材曝露於大氣中 的關係，一氧化物形成於在該等孔處之該底下的金屬層的 一被曝露的表面上。該濺射蝕刻預淸潔嘗試將該氧化物及 在去灰（ashing)及濕式淸潔之後的任何殘留物鈾刻掉。該職 射蝕刻預淸潔典型地需要1〇·3托爾（Ton·)或更高的真空。 經濟部智慧財產局員工消費合作社印製 前技的一特定的金屬沉積處理沉積一阻障金屬層及一 銅晶種層於一半導體基材上與在介電孔（via hole)處的底下 銅層形成接點。在該蝕刻步驟中，介電孔被形成穿透二氧 化矽及氮化矽層到達該底下的銅層。在前技的另一蝕刻步 驟中，該等介電孔被形成於低k的介電材質中，如一聚合 物基的材質及含氟或碳的氧化物。在鈾刻步驟之後及在基 屬膜層的沉積之前，一電漿去灰步驟及一濕式淸潔步驟可 大致上將光阻，光阻殘留物，及鈾刻殘留物去除掉留下被 吸收至該基材表面上的物質及留下一層薄的氧化銅層於該 等介電孔處的底下銅層之上。前技的反吸收步驟將被吸收 於該基材的表面內之物質去除掉。該濺射蝕刻預淸潔將介 電孔內的氧化銅層去除掉並去除掉該基材之包圍在該等介 電孔周圍的一裸露層。該阻障金屬然後被沉積，接著銅晶 種層被沉積。接下來，一電鍍步驟沉積額外的銅層至該銅 晶種層上。 前技的群束工具包括一離手站（ha n doff station)，一前 端輸送模組，一後端輸送模組，一去氣模組，一濺射鈾刻 -5- 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 1287853 A7 B7 五、發明説明（3 ) 模組，及一金屬沉積模組。該前端輸送模組包括一第一機 器人。該後端輸送模組包括一第二機器人。該離手站藉由 一第一閥或負載鎖定件而耦合至該前端輸送模組。該去氣 模組及濺射鈾刻模組係耦合至該前端輸送模組。該後端輸 送模組藉由一第二閥或負載鎖定而耦合至該前端輸送模組 。該金屬沉積模組係耦合至該後端輸送模組。通常，該群 束工具包括兩個去氣模組，兩個濺射蝕刻模組，及兩個或 更多的金屬沉積模組。在操作時，該前端輸送模組在真空 下操作。一用來實施前技的反吸收，預淸潔及金屬沉積的 第二群束工具包括一單一的輸送模組，該去氣模組，該濺 射蝕刻模組，及該金屬沉積模組，其中該去氣模組，該濺 射蝕刻模組，及該金屬沉積模組係耦合至該單一的輸送模 組。 該群束工具的操作是以該第一機器人將一基材從該離 手站送至實施該反吸收步驟之去氣模組來開始。該第一機 器人然後將該基材輸送至實施該濺射蝕刻預淸潔的該濺射 蝕刻模組。該第一機器人然後將該基材輸送至該第二機器 人，該第二機器人將該基材置於該金屬沉積模組中。在該 金屬膜層沉積之後，該第二機器人將該基材輸送回該第一 機器人，其將該基材送回到該離手站。 因爲前技的反吸收步驟是在高溫下操作的，所以存在 著溫度所誘發的基材損壞的可能。此顧慮對於聚合物材質 特別容易發生，因爲聚合物材質之低介電常數的特性，所 以未來的積體電路可能會使用聚合物材質作爲絕緣體。 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 一 ：---,—衣-- (請先閲讀背面之注意事項再填寫本頁} 訂 經濟部智慧財產局員工消費合作社印製 1287853 A7 —_B7 _^ 五、發明説明（4 ) 在該預淸潔步驟中，該電漿會對該基材的表面造成電 漿損害。而且，濺射蝕刻預淸潔會在溝渠的邊緣及在介電 孔的邊緣造成角落修剪（corner clipping)而產生缺陷是眾所 習知的。角落修剪對於較小尺寸的積體電路而言特別有害 ，因爲角落修剪減少相鄰接線之間的隔離而導致相鄰接線 之間無法被接受的電子干擾。濺射鈾刻不只造成積體電路 實體上的損害，其亦造成電子損害。 再者，在溝渠及介電孔內之底下金屬層的濺射會造成 圓桶化（barreling)及造成被濺射的物質沉積於溝渠及介電孔 的側壁上。例如，在介電孔內之氧化銅層的濺射蝕刻預淸 潔造成銅及氧化銅沉積於介電孔的側壁上。甚者，對於預 淸潔聚合物基的物質而言濺射蝕刻預淸潔是不恰當的，因 爲可預期到在濺射蝕刻預淸潔中之實體的轟擊會造成損傷 。而且，即使濺射蝕刻預淸潔可被使用，氫離子在聚合物 物質被曝露時無法被使用，因爲氫會將聚合物基的物質氫 化。此外，該濺射蝕刻預淸潔在溝渠或介電孔的深寬比（深 度除以寬度）增大時即會變得較沒有效果。 經濟部智慧財產局員工消費合作社印製 C请先閱讀背面之注意事項再填寫本頁) 去氣模組與濺射蝕刻模組兩者都需要高真空幫浦及相 關的真空管路，這將增加該群束工具的購製及維修成本。 該濺射蝕刻模組進一步增加該群束工具的購製及維修成本 ，因爲其相對複雜且經常的維修用以確保其不會成爲一顆 粒污染物的來源。 一種可與金屬沉積相容的反吸收方法是所需要的，該 .方法不需過高的溫度。 本紙張尺度適用中國國家標準（CNS ) A4規格（210X：297公釐Ί " ~ 1287853 A7 B7 五、發明説明（5 ) 一種可與金屬沉積相容的預淸潔方法是所需要的，該 方法不使用電漿。 一種可與低k物質，如聚合物基的材質及含氟或碳的 氧化物，相容的反吸收方法是所需要的。 一種可與低k物質，如聚合物基的材質及含氟或碳的 氧化物，相容的預淸潔方法是所需要的。 一種可與金屬沉積相容的反吸收方法是所需要的，該 方法較便宜。 一種可與金屬沉積相容的預淸潔方法是所需要的，該 方法較便宜。 〔發明槪要〕 一種將一金屬膜層沉積於一基材上的方法包括一超臨 界預淸潔步驟，一超臨界反吸收（desorb)步驟，及一金屬沉 積步驟。最好是，該預淸潔步驟包含保持超臨界二氧化碳 及一螯合劑與該基材接觸用以從該基材的一金屬表面上去 除氧化層。更佳的是，該預淸潔步驟包含保持超臨界二氧 化碳，該螯合劑，及一酸與該基材接觸其中該酸溶解該氧 化層同時該螯合劑附著用以釋出金屬離子並將釋出的金屬 離子帶走。或者，該預淸潔步驟包含保持該超臨界二氧化 碳及一胺與該氧化層接觸，其中該J安溶解該氧化層並帶走 金屬離子。該反吸收步驟包含保持該超臨界二氧化碳與該 基材接觸用以從該基材中去除被吸收的物質。該金屬沉積 步驟然後將該金屬膜層沉積於該基材上，此沉積不需將該 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -8 J---.I^^裝-- (請先閱讀背面之注意事項再填寫本頁) 、11 d 經濟部智慧財產局員工消費合作社印製 1287853 A7 B7 五、發明説明（6 ) s材曝露於一會將該被預淸潔的基材的金屬表面氧化的氧 化材質中及不需將該基材曝露於會吸附於該基材上的一非 揮發性吸附材質中。 一用來將一金屬膜層沉積於一基材上的設備包括一輸 送模組，一超臨界處理模組，一真空模組，及一金屬沉積 模組。該超臨界處理模組被耦合至該輸送模組。該真空模 組將該金屬沉積模組耦合至該輸送模組。在操作時，用來 沉積該金屬膜層的設備實施該超臨界預淸潔步驟，該超臨 界反吸收步驟，及該金屬沉積步驟。 〔圖式簡要說明〕 第1圖示意地顯示本發明之較佳的方法。 第2圖示意地顯示本發明的另一方法。 第3圖顯示本發明之較佳的金屬沉積群束工具。 〔符號說明〕 ：---·I -- (請先閲讀背面之注意事項再填寫本頁) 訂 經濟部智慧財產局員工消費合作社印製 20 較佳方法 22 超臨界預淸潔步驟 24 超臨界反吸收步驟 26 金屬沉積步驟 30 第四替代方法 32 超臨界殘留物去除步驟 40 較佳金屬沉積群束工具 42 裝載模組 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -9 - 以7853
66 68 70 72 經濟部智慧財產局員工消費合作社印製 A7 B7 前端輸送模組 前端輸送模組機器人 第一超臨界模組 第二超臨界模組 第三超臨界模組 第四超臨界模組 後端輸送模組 後端輸送模組機器人 第一金屬沉積模組 第二金屬沉積模組 第三金屬沉積模組 第四金屬沉積模組 第一負載鎖定件 第二負載鎖定件 裝載機器人 閥 第一前端開口單元莢 第二前端開口單元莢 半導體基材 〔最佳實施例詳細說明〕 本發明之較佳的方法被示意地示於第i圖中。此較佳 的方法20沉積一金屬膜層於一基材上。最好是，該基材爲 一半導體基材，其具有穿透一介電材質到達一底下的金屬 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐）-1〇 - (請先閱讀背面之注意事項再填寫本頁)
1287853 A7 _____B7____ 五、發明説明（8 ) 層之介電孔。當該金屬膜層被沉積於該半導體基材上時 該金屬膜層在該等介電孔處與底下金屬層相接觸。更佳地 ，該半導體基材包括在一雙鑲嵌結構中之介電孔及溝渠。 在該雙鑲嵌結構中，該金屬膜層亦在該等介電孔處與底下 金屬層相接觸。或者，該金屬膜層被沉積於一替代的基材 上，其中該金屬膜層與該替代基材上之裸露的金屬表面相 接觸。 此較佳的方法20包含一超臨界預淸潔步驟22，一超臨 界反吸收步驟24，及一金屬沉積步驟26。在該超臨界預淸 潔步驟22中，該基材被保持在一超臨界室中且最好是被曝 露於超臨界二氧化碳及一螯合劑中。該超臨界二氧化碳及 螯合劑一起與在底下的金屬層上的一氧化物起反應用以，形 成底下金屬的螯合物。在超臨界反吸收步驟24中，該基材 被保持在該超臨界室內並被曝露於超臨界二氧化碳中，其 可從基材中釋出被吸收的物質。 更佳地，超臨界預淸潔步驟22包含將一酸及該超臨界 二氧化碳及該螯合劑保持與該基材接觸。該酸作用，以將 該氧化物溶解，同時該螯合劑附著用以釋出金屬離子並將 釋出的金屬離子帶走。 最好是，該螯合劑是從包含2，4-戊烷二酮，1，1， 1，6，6，6·六氟-2，4-戊烷二酮，1，1，1-三氟戊烷-2，4-二酮，2，6-六甲基庚烷-3，5-二酮，2，2，7-三 甲基辛院-2，4-二酮，2，2，6，6·四甲基庚烷-3，5·二 酮，乙烯二胺二醋酸（EDTA)，及三價氮基三醋酸（NTA)的組 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -11 - K---‘I·裝-- (請先閲讀背面之注意事項再填寫本頁) 訂 經濟部智慧財產局員工消費合作社印製 1287853 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明説明（9 ) 群中所選取的。 最好是，該酸是依據將被預淸潔的特定氧化物而從包 含一有機酸或一無機酸的組群中選取的。最好是，有機酸 是被用於銅氧化物的預淸潔。更佳的是，對於銅氧化物而 言’該有機酸是從包含乙酸，甲酸，草酸及丙二酸；α-羥 基酸如羥乙酸，檸檬酸，蘋果酸或乳酸；或胺基酸如甘胺 酸’丙胺酸，白胺酸，錨胺酸，麩醯胺或維胺酸的組群中 所選取的。 最好是，該無機酸是用於氧化鋁的預淸潔。更佳的是 ’對氧化鋁的預淸潔而言，該無機酸是從包含氫氟酸及緩 衝的氫氟酸公式如氟化銨及二氟化胺的組群中所選取的。 或者，在預淸潔步驟22中，該螯合劑及酸被一胺所取 代。該胺作用以溶解該氧化物並帶走金屬離子。最好是， 該胺是從包含三乙醇胺，2-甲胺基乙醇，吡啶，2，2，-聯 吡啶，及五甲基二乙烯三胺的組群中所選取的。 在超臨界預猜潔步驟22中，該超臨界室最好是被加壓 至一超過臨界壓力的高壓及該超臨界二氧化碳與該螯合劑 被流至該基材上。更佳地，該超臨界二氧化碳，該螯合劑 及酸被流到該基材上。或者，該超臨界二氧化碳，及胺被 流到該基材上。 爲了要在該超臨界室內達到超臨界條件，在該室內的 溫度必需被保持在一臨界溫度（30.5 °C )或在臨界溫度之上。 此外，壓力在該高壓與一低壓之間被循環至少一又二分之 一次。最好是，該低壓是在該臨界壓力之上。 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） _、2: I ----„---IT------l· (請先閱讀背面之注意事項再填寫本頁) 1287853 A7 B7______ 五、發明説明（1〇 ) (請先閱讀背面之注意事項再填寫本頁) 該超臨界反吸收步驟24最好是該超臨界預淸潔步^驟22 的一部分。被吸收至該基材上或被吸收至該基材內的^ M 及液體將於該預淸潔步驟22期間被反吸收。將該室內的溫 度升高被預期可改善該超臨界反吸收步驟24。或者，該超 臨界反吸收步驟24如一獨立的步驟地於該超臨界預淸潔步 驟22之前或之後被實施。 最好是，超臨界預淸潔及反吸收步驟22及24期間’該 室內的溫度是在31 °C至100 °C之間。或者，該室內的溫度 被保持在該基材的溫度限制之下。 該金屬沉積步驟26包含將該金屬膜層沉積於該基材上 。最好是，該基材包括到達該底下的金屬層之介電孔。該 金屬沉積步驟26最好是將金屬膜層沉積至介電孔內使得金 屬膜層與底下的金屬層接觸。最好是，該金屬沉積步驟26 爲化學氣相沉積（CVD)處理。或者，該金屬沉積步驟26爲 物理氣相沉積（PVD)處理）。 經濟部智慧財產局員工消費合作社印製 在該超臨界預淸潔，超臨界反吸收，及金屬沉積步驟 22，24及26之間，該基材沒有被曝露於大氣中或其它會在 該基材上形成一非揮發性吸收物，不會在該基材內形成非 揮發性吸收物，或會於基材反應的氣體中，是很重要的。 在基材上形成揮發性吸收物是無害的，因爲在該超臨界預 淸潔步驟22或在該超臨界反吸收步驟24的終了短暫地曝露 於真空下可將該揮發性吸收物快速地從該基材上去除掉。 最好是，在該超臨界預淸潔，超臨界反吸收，及金屬沉積 步驟22，24及26之間，該基材被保持在真空下。或者， 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐) ΓΊΤΙ _ ~ '— 1287853 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明説明（彳1 ) 在該超臨界預淸潔，超臨界反吸收，及金屬沉積步驟22 ， 24及26之間，該基材都被保持在一鈍氣的氛圍中，其中該 鈍氣氛圍既不會形成非揮發性吸收物亦不會形成揮發性吸 收物。 藉由使用超臨界預淸潔步驟22而非濺射蝕刻預淸潔步 驟，因而可避免基材的電漿損傷。再者，藉由使用超臨界 預淸潔步驟22而非濺射蝕刻預淸潔步驟，因而可避免在溝 渠及介電孔邊緣處之角落修剪與切面的形成，可避免溝渠 及介電孔之圓筒化（barreling)，及可避免被濺射的物質沉積 在溝渠及介電孔的側壁上。此外，使用超臨界預淸潔步驟 而非濺射蝕刻預淸潔步驟，因而可避免製造在該基材上之 積體電路的電子損傷。甚者，與濺射蝕刻預淸潔步驟比較 起來，該超臨界預淸潔步驟22對於聚合物基的介電材質造 成的傷害較小。 使用超臨界反吸收步驟24而非在真空下對基材加熱來 使基材去氣可避免在處理基材時使用過高的溫度’這對於 聚合物基的介電材質而言是特別重要的。 依據特定的處理需求，該超臨界預淸潔步驟22或該超 臨界反吸收步驟24可被省略。在本發明的一第一替代方法 中，該超臨界預淸潔步驟22及金屬沉積步驟26被實施’但 該超臨界反吸收步驟24則被省略。在本發明的一第二替代 方法中，該超臨界反吸收步驟24及金屬沉積步驟26被實施 ，但該超臨界預淸潔步驟22則被省略。在本發明的一第三 替代方法中，第二替代方法中之金屬沉積步驟26被一替代 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐）-14 - (請先閱讀背面之注意事項再填寫本頁)
1287853 A7 ___B7 _ 五、發明説明（12 ) 沉積方法所取代。在該替代沉積方法中，一膜層，而非一 金屬膜層，被沉積於該基材上。 -----：----- (請先閲讀背面之注意事項再填寫本頁) 本發明的一第四替代方法被示意地示於第2圖中。該 第四替代方法30在較佳的方法20中添加一超臨界殘留物去 除步驟32。該超臨界殘留物去除步驟32將前一鈾刻步驟之 後留在該基材上殘留物去除掉。在該前一蝕刻步驟中，光 阻遮蔽一部分的基材使得只有沒有被遮蔽的基材部分被触 刻。此蝕刻步驟亦蝕刻該光阻。通常，在蝕刻步驟之後都 會有一些光阻殘留在該基材上且亦會有鈾刻殘留物及光阻 殘留物在基材上。因此，蝕刻步驟之後之留在該基材上之 殘留物包括了光阻殘留物，蝕刻殘留物，及殘餘的光阻。 該超臨界殘留物去除步驟32包含將帶有殘留物之基材曝露 於超臨界二氧化碳及一溶劑中直到該殘留物從該基材上被 去除爲止。該超臨界殘留物去除步驟32被詳細揭示於2000 年十月25日所提申之美國專利第09/697,227號中，該案內 容藉由此參照而被倂於本文中。 經濟部智慧財產局員工消費合作社印製 本發明之較佳的金屬沉積群束工具被示於第3圖中。 該較佳的金屬沉積群束工具40包含一裝載模42，一前端輸 送模組44 ’ 一*前端輸送模組機器人46 ’第一至第四超臨界 模組48-51 ，一後端輸送模組52 ’ 一後端輸送模組機器人 54，及第一至第四金屬沉積模組56-59。該裝載模組42包 含第一及第二負載鎖定件60及62 ’及一裝載機器人64。 該第一及第二負載鎖定件60及62包含一供該前端輸送模組 用的入口。 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐1 ~^15 : ' 一 1287853 A7 B7 五、發明説明（13 ) (請先閱讀背面之注意事項再填寫本頁) 該裝載模42，前端輸送模組機器人46，第一至第四超 臨界模組48-51被耦合至該前端輸送模組44上。該後端輸 送模組5 2經由一閥6 6而被耦合至該前端模組。該後端模組 機器人54及第一至第四金屬沉積模組56-59被耦合至該後 端輸送模組52。 在操作時，應用一標準的機械界面（SMIF)槪念的第一 及第二前開口單元莢（F〇UP)68，70與該裝載模42相耦合。 最好是，第一莢68最初包含半導體基材72其在一濕式淸潔 處理中被鈾刻，去灰，及淸潔。該裝載機器人64將〜半導 體基材72從該第一莢68送到該第一負載鎖定件60。該負 載鎖定件60關閉並被被抽至真空。該負載鎖定件60然後被 開啓至同樣在真空下的該前端輸送模組46。該前端輸送模 組46將該半導體基材72送至該第一超臨界模48，該超臨 界預淸潔及反吸收步驟22及24(第1圖）於該模組中被實施 。同時，其它的半導體基材從第一莢經由該第一負載鎖定 件60被裝載至該第二至第三超臨界模組49-51 。或者該等 FOUP被SMIF或開放匣盒所取代。 經濟部智慧財產局員工消費合作社印製 當超臨界預淸潔及反吸收步驟22及24完成時，該半導 體基材72從該第一超臨界模組48通過閥66而被送至後端 輸送模組52。該後端輸送模組52亦在真空下操作。該後端 輸送模組機器人54然後將該半導體基材72送至該第一金屬 沉積模組56，該金屬沉積步驟26(第1圖）在該模組中實施 。同時，其它的半導體基材則從該第二至第三超臨界模組 49-51被送至該第二至第三金屬沉積模組57-59。 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -16- ^ 1287853 A7 B7 五、發明説明（14 ) (請先閲讀背面之注意事項再填寫本頁) 當該金屬沉積步驟26完成時，該半導體基材72從該第 一金屬沉積模組56被該第二輸送模組機器人54送至該第一 輸送模組機器人46。該第一輸送模組機器人46然後將該半 導體基材72送至該第一負載鎖定件60，其被加壓至大氣壓 。該半導體基材72然後被該裝載模組機器人46送至該第一 莢68 。依序地，其它的半導體基材從該第二至第三金屬沉 積模組57-59被送至該第一俠68。稍後，更多來自於第二 莢70的半導體基材被處理並回到第二莢70。 對於熟悉此技藝者而言將會很明顯的是，更多或更少 的超臨界處理模組可被耦合至該前端輸送模五44。再者， 對於熟悉此技藝者而言將會很明顯的是，更多或更少的金 屬沉積模組可被耦合至該後端輸送模組52。甚者，對於熟 悉此技藝者而言將會很明顯的是，對於前端輸送模組44而 言，一單一的負載鎖定件將足以進入該前端輸送模組44。 經濟部智慧財產局員工消費合作社印製 在一第一替代的金屬沉積群束工具中，該前端輸送模 組44是在大氣壓下操作並提供一鈍氣環境給該半導體晶圓 。在該第一替代的金屬沉積群束工具中，第三及第四負載 鎖定件將該前端輸送模組44耦合至該後端輸送模組52 °同 樣在該第一替代的金屬沉積群束工具中，一鈍氣注入結構 被耦合至該前端輸送模組。 在一第二替代的金屬沉積群束工具中’該第一及第二 超臨界處理模組48及49，及第一及第二金屬沉積模組56 及57係耦合至單一的輸送模組。與較佳的金屬沉積工具40 比較起來，該第一替代的金屬沉積工具係較不好的，因爲 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -17 · 1287853 A7
「 遞見制I 五、發明説明（15) -- _丨 該較佳的金屬沉積工具藉由將模組安排在各自的輸送模組 附近而將超臨界處理模組與金屬沉積模組分隔開來。這可 達成一較乾淨的金屬沉積處理。該第一替代的金屬沉積工 具係被教導於2000年十一月1日所提申之美國專利申請案 第09/704,641號中，該案內容藉由此參照而被倂於本文中 〇 對於熟悉此技藝者而言將會很明顯的是，該較佳的實 施曆之不同的變化可在不偏離由以下的申請專利範圍所界 定之本發明的精神與範圍下被達成。 (請先閲讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 -18- 本紙張尺度適用中國國家標準（CNS ) A4規格（210X29*7公釐）

Claims (1)

  1. A8 B8 C8 D8 經濟部智慧財產局員工消費合作社印製 1287853 —- ZZZZ~T ^mrT 六、申請專利範圍 一— 附件4A; 第90109943號專利申請案 中文申請專利範圍替換本 民國93年9月22日修正 1. 一種將一金屬膜層沉積於一基材上的方法，其包含以 下的步驟： a) 保持超臨界二氧化碳及一螯合劑與該基材接觸用以從 該基材的一金屬表面上去除一氧化物層，藉以形成一經過 預淸潔的基材；及 b) 在不需將該經過預淸潔的基材曝露於一會將該經過 預淸潔的基材的金屬表面氧化的物質中之下，沉積該金屬 膜層於該經過預淸潔的基材上。 2. 如申請專利範圍第1項所述之方法，其中該保持超臨 界二氧化碳及一螯合劑與該基材接觸的步驟更包含保持一’ 酸與該基材接觸使得該酸溶解該氧化物層。 3 ·如申請專利範圍第2項所述之方法，其中該酸係選自 於包含一有機酸及一無機酸的組群中。 4.如申請專利範圍第2項所述之方法，其中該氧化物層 包含氧化銅。 5 .如申請專利範圍第4項所述之方法，其中該酸包含一 有機酸。 6.如申請專利範圍第4項所述之方法，其中該酸係選自 於包含乙酸’甲酸，草酸及丙二酸；^ -羥基酸如羥乙酸， 檸檬酸，蘋果酸或乳酸；或胺基酸如甘胺酸，丙胺酸，白 本紙張尺度適用中國國家標準（CNS ) Α4規格（210X297公釐） (請先閲讀背面之注意事項再填寫本頁)
    1287853 A8 B8 C8 D8 六、申請專利範圍 胺酸，鏘胺酸，麩醯胺或維胺酸的組群中。 (請先聞讀背面之注意事項再填寫本頁) 7 ·如申請專利範圍第2項所述之方法，其中該氧化物包 含氧化鋁。 8·如申請專利範圍第7項所述之方法，其中該酸包含一 無機酸。 9.如申請專利範圍第7項所述之方法，其中該酸係選自 於包含氫氟酸及緩衝的氫氟酸公式如氟化銨及二氟化胺的 組群中。 10·如申請專利範圍第1項所述之方法，其更包含在沉 積該金屬膜層之前，保持該超臨界二氧化碳與該基材接觸 用以將一被吸收物質從該基材中釋出的步驟。 1 1 ·如申請專利範圍第1 0項所述之方法，其中該保持該 超臨界二氧化碳與該基材接觸將一被吸收的物質從該基材 釋出。 經濟部智慧財產局員工消費合作社印製 I2.如申請專利範圍第1項所述之方法，其更包含在沉 積該金屬膜層之前，保持該超臨界二氧化碳及一溶劑與該 基材接觸用以將一殘留物從該基材上去除的步驟，該殘留 物是選自於包含光阻，光阻殘留物，及鈾刻殘留物的組群 中〇 1 3 .如申請專利範圍第1項所述之方法，其中該螯合劑 係選自於包含包含2，4-戊烷二酮，1，1，1，6，. 6，6·六 氟-2，4-戊烷二酮，1，1，1-三氟戊烷-2，4-二酮，2，6-六 甲基庚烷-3，5-二酮，2，2，7-三甲基辛烷-2，4-二酮，2 ，2，6，6-四甲基庚烷-3，5-二酮，乙烯二胺二醋酸 本紙張尺度適用中國國家摞準（CNS ) A4規格（210X297公釐） _ 2 _ 1287853 A8 B8 C8 D8 六、申請專利範圍 (EDTA)，及三價氮基三醋酸（NTA)的組群中。 14.一種將一金屬膜層沉積於一基材上的方法，其包含 以下的步驟： a) 保持超臨界二氧化碳及一胺與該基材接觸用以從該基 材的一金屬表面上去除一氧化物層，藉以形成一經過預淸 潔的基材；及 b) 在不需將該經過預淸潔的基材曝露於一會將該經過 預淸潔的基材的金屬表面氧化的物質中之下，沉積該金屬 膜層於該經過預淸潔的基材上。 15·如申請專利範圍第1項所述之方法，其中該胺係 選自於包含三乙醇胺，2-甲胺基乙醇，吡啶，2，2，-聯吡啶 ，及五甲基二乙烯三胺的組群中。 1 6 ·如申請專利範圍第1 4項所述之方法，其更包含在沉 積該金屬膜層之前，保持該超臨界二氧化碳與該基材接觸· 用以將一被吸收物質從該基材中釋出的步驟。 17·如申請專利範圍第16項所述之方法，其中該保持該 超臨界二氧化碳與該基材接觸將一被吸收的物質從該基材· 釋出。 18·如申請專利範圍第I4項所述之方法，其更包含在沉 積該金屬膜層之前，保持該超臨界二氧化碳及一溶齊[|與_ 基材接觸用以將一殘留物從該基材上去除的步驟.，該^胃 物是選自於包含光阻，光阻殘留物，及蝕刻殘留物的，組肖 中 〇 19.一種將一金屬膜層沉積於一基材上的方法，其包含 ^氏張尺度適用中國國家摞準（CNS ) A4規格（210X297公釐) ---- "- ----------#! (請先閱讀背面之注意事項再填寫本頁) 訂 經濟部智慧財產局員工消費合作社印製 A8 B8 C8 D8 1287853 六、申請專利範圍 以下的步驟： (請先閱讀背面之注意事項再填寫本頁} a) 保持超臨界二氧化碳於一第一模組內且與該基材接觸 用以從該基材上去除一吸著物（sorbate)，其是由包含一被吸 收物（aborbate)及一吸附物（adsorbate)的組群中所選取的， 藉以形成一經過反吸收的基材；及 b) 在不需將該經過反吸收的基材曝露於會形成非揮發 性吸著物的物質中之下，在一第二模組中將該膜層沉積於 該經過反吸收的基材上，其中該基材是經由一閥而從該第 一模組被傳送至該第二模組。 2 0.如申請專利範圍第19項所述之方法，其中該膜層包 含一金屬膜層。 2 1 .如申請專利範圍第20項所述之方法，其更包含在沉 積該金屬膜層於該基材上的步驟之前，保持該超臨界二氧 化碳及一螯合劑與該基材接觸，用以將一氧化物層從該基‘ 材的一金屬表面上去除的步驟。 經濟部智慧財產局員工消費合作社印製 22.如申請專利範圍第21項所述之方法，其中保持該超 臨界二氧化碳及該螯合劑與該基材接觸的步驟更包含保持 一酸與該基材接觸使得該酸可溶解該氧化物層。 2 3.如申請專利範圍第20項所述之方法，其更包含在沉 積該金屬膜層於該基材上的步驟之前，保持該超臨界二氧 化碳及一胺與該基材接觸，用以將一氧化物層從該基材的 一金屬表面上去除的步驟。 2 4.如申請專利範圍第20項所述之方法，其更包含在沉 積該金屬膜層之前，保持該超臨界二氧化碳及一溶劑與該 -4 - 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） A8 B8 C8 D8 1287853 々、申請專利範圍 基材接觸用以將一殘留物從該基材上去除的步驟，該殘留 物是選自於包含光阻，光阻殘留物，及蝕刻殘留物的組群 中〇 2 5.—種將一金屬膜層沉積於一基材上的方法，其包含 以下的步驟： a) 保持超臨界二氧化碳與該基材接觸用以從該基材上去 除一吸著物（sorbate)，其是由包含一被吸收物（aborbate)及 一吸附物（adsorbate)的組群中所選取的； b) 保持該超臨界二氧化碳及一螯合劑與該基材接觸， 用以將一氧化物層從該基材.的一金屬表面上去除；及 c) 在不需將該基材曝露於會在沉積該金屬膜層之前形成 非揮發性吸著物的第一物質中及在不需將該基材曝露於會 在沉積該金屬膜層之前形成氧化物的第二物質中之下，沉 積該金屬膜層於該基材上。 26. 如申請專利範圍第25項所述之方法，其中保持該超 臨界二氧化碳及該螯合劑與該基材接觸的步驟更包含保持 一酸與該基材接觸使得該酸可溶解該氧化物層。 27. 如申請專利範圍第25項所述之方法，其更包含在沉 積該金屬膜層之前，保持該超臨界二氧化碳及一溶劑與該 基材接觸用以將一殘留物從該基材上去除的步驟，該殘留 物是選自於包含光阻，光阻殘留物，及蝕刻殘留物的組群 〇 28. —種將一金屬膜層沉積於一基材上的方法，其包含 以下的步驟： 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） (請先聞讀背面之注意事項再填寫本頁) 訂 經濟部智慧財產局員工消費合作社印製 A8 B8 C8 D8 1287853 六、申請專利範圍 (請先閱讀背面之注意事項再填寫本頁) a) 保持超臨界二氧化碳與該基材接觸用以從該基材上去 除一吸著物（sorbate)，其是由包含一被吸收物（aborbate)及 一吸附物（adsorbate)的組群中所選取的； b) 保持該超臨界二氧化碳及一胺與該基材接觸，用以 將一氧化物層從該基材的一金屬表面上去除；及 〇在不需將該基材曝露於會在沉積該金屬膜層之前形成 非揮發性吸著物的第一物質中及在不需將該基材曝露於會 在沉積該金屬膜層之前形成氧化物的第二物質中之下，沉 積該金屬膜層於該基材上。 29.如申請專利範圍第28所述之方法，其更包含在沉積 該金屬膜層之前，保持該超臨界二氧化碳及一溶劑與該基 材接觸用以將一殘留物從該基材上去除的步驟，該殘留物 是選自於包含光阻，光阻殘留物，及蝕刻殘留物的組群中 〇 3 0.—種將一金屬膜層沉積於一基材上的方法，其包含 以下的步驟： 經濟部智慧財產局員工消費合作社印製 a) 保持超臨界二氧化碳，一螯合劑及一酸與該基材接觸 使得該酸可溶解該基材的一金屬表面上的氧化物層及該螯 合劑可帶走金屬離子，藉以形成一經過預淸潔的基材；及 b) 在不需將該經過預淸潔的基材曝露於一會氧化該經 過預淸潔的基材的金屬表面的物質中之下，沉積該金屬膜 層於該經過預淸潔的基材上。 31.—種用來將一金屬膜層沉積於一基材上的設備，其 包含： 本紙張尺度適用中國國家標準（CNS ) A4規格（210X 297公釐） -6 - 1287853 A8 B8 C8 D8 六、申請專利範圍 a) —輸送模組； b) —超臨界處理模組，其耦合至該輸送模組； c) 一金屬沉積模組；及 d) —真空模組，其將該金屬沉積模組耦合至該輸送模 組； e) 將該基材傳送於該超臨界處理模組與該金屬沉積模組 之間的機構。 3 2.如申請專利範圍第31項所述之設備，其中該輸送模 組包含一入口及一第一機器人。 3 3.如申請專利範圍第32項所述之設備，其中該入口包 含一負載鎖定件。 34·如申請專利範圍第33,項所述之設備，其更包含一鈍 氣注入結構，其耦合至該輸送模組使得在操作時該輸送模 組可提供一鈍氣環境。 3 5.如申請專利範圍第33項所述之設備，其更包含一真 空幫浦，其耦合至該輸送模組使得在操作時該輸送模組可 在真空下操作。 3 6·如申請專利範圍第32項所述之設備，其中該真空模 組包含一第二機器人。 3 7·如申請專利範圍第36項所述之設備，其更包含一閥 ’該閥將該輸送模組耦合至該真空模組。 38·如申請專利範圍第37項所述之設備，其更包含一真 空幫浦其耦合至該真空模組。 3 9·如申請專利範圍第36項所述之設備，其.更包含一負 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） (請先閱讀背面之注意事項再填寫本頁) 訂 P. 經濟部智慧財產局員工消費合作社印製 1287853 A8 B8 C8 D8 經濟部智慧財產局員工消費合作社印製 六、申請專利範圍 載鎖定件，該負載鎖定件將該輸送模組耦合至該真空模組 〇 4 0.如申請專利範圍第3 1項所述之設備，其中該超臨界 處理模組包含一壓力容器。 41. 一種用來將一金屬膜層沉積於一基材上的設備，其 包含： a) —輸送模組，其包含一入口及一第一機器人； b) —超臨界處理模組，其耦合至該輸送模組； c) 一金屬沉積模組；及 d) —真空模組，其將該金屬沉積模組耦合至該輸送模 組，該真空模組包含一真空室及一第二機器人，其中該第 一機器人與該第二檄器人被建構成可將該基材傳送於該超 臨界處理模組與該金屬沉積模組之間的機構。 42. —種用來將金屬膜層沈積於一基材上的設備，其包 含： a) —前端輸送模組，其包含一或多個超臨界模組被建構 成可用一超臨界溶液來處理一基材； b) —後端輸送模組，其耦合至該前端輸送模組，該後端 輸送模組包含一或多個沉積模組被建構成可將一物質層沉 積在該經過處理的基材上；及 c) 在不需將該經過處理的基材曝露於環境中之下，將該 基材傳送於該前端輸送模組與該後端輸送模組之間的機 構。 43·如申請專利範圍第42項所述之設備，其中將該基材 本紙張尺度適用中國國家標準（ CNS ) A4規格（210X297公釐） ~ (請先閲讀背面之注意事項再填寫本頁)
    1287853 Α8 Β8 C8 D8 經濟部智慧財產局員工消費合作社印製 々、申請專利範圍 傳送於該前端輸送模組與該後端輸送模組之間的機構包含 一或多個輸送機器人。 4(如申請專利範圍第42項所述之設備，其更包含一閥 用來將該基材隔離在前端輸送模組或該後端輸送模組之一 者內。 45. 如申請專利範圍第42項所述之設備，其更包含一裝 載器模組用來載入該基材。 46. 如申請專利範圍第45項所述之設備，其中該裝載器 模組被耦合至該前端輸送模組。 本紙張尺度適用中國國家標準（CNS ) μ規格（210X297公釐） (請先閱讀背面之注意事項存填寫本頁)
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US20020001929A1 (en) 2002-01-03
WO2001082368A2 (en) 2001-11-01
US20040229449A1 (en) 2004-11-18
CN1425194A (zh) 2003-06-18
KR20030043788A (ko) 2003-06-02
US6890853B2 (en) 2005-05-10
CN1216415C (zh) 2005-08-24
JP5000629B2 (ja) 2012-08-15
AU2001255656A1 (en) 2001-11-07
WO2001082368A3 (en) 2002-05-16
EP1277233A2 (en) 2003-01-22
JP2009102740A (ja) 2009-05-14
IL152376A (en) 2006-07-05
US7208411B2 (en) 2007-04-24
IL152376A0 (en) 2003-05-29
JP2003534646A (ja) 2003-11-18
KR100693691B1 (ko) 2007-03-09

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