DE69839935D1 - Aktiv-Matrix-Flüssigkristallanzeige und deren Herstellungsverfahren - Google Patents
Aktiv-Matrix-Flüssigkristallanzeige und deren HerstellungsverfahrenInfo
- Publication number
- DE69839935D1 DE69839935D1 DE69839935T DE69839935T DE69839935D1 DE 69839935 D1 DE69839935 D1 DE 69839935D1 DE 69839935 T DE69839935 T DE 69839935T DE 69839935 T DE69839935 T DE 69839935T DE 69839935 D1 DE69839935 D1 DE 69839935D1
- Authority
- DE
- Germany
- Prior art keywords
- manufacturing
- liquid crystal
- crystal display
- active matrix
- matrix liquid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004973 liquid crystal related substance Substances 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000011159 matrix material Substances 0.000 title 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/441—Interconnections, e.g. scanning lines
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Liquid Crystal (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32342397 | 1997-11-25 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE69839935D1 true DE69839935D1 (de) | 2008-10-09 |
Family
ID=18154528
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69839935T Expired - Lifetime DE69839935D1 (de) | 1997-11-25 | 1998-11-24 | Aktiv-Matrix-Flüssigkristallanzeige und deren Herstellungsverfahren |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US6284558B1 (de) |
| EP (1) | EP0919850B1 (de) |
| KR (1) | KR100329094B1 (de) |
| DE (1) | DE69839935D1 (de) |
| TW (1) | TW394986B (de) |
Families Citing this family (60)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3230664B2 (ja) * | 1998-04-23 | 2001-11-19 | 日本電気株式会社 | 液晶表示装置とその製造方法 |
| US7064070B2 (en) | 1998-09-28 | 2006-06-20 | Tokyo Electron Limited | Removal of CMP and post-CMP residue from semiconductors using supercritical carbon dioxide process |
| WO2001047044A2 (en) | 1999-12-21 | 2001-06-28 | Plastic Logic Limited | Forming interconnects |
| WO2001046987A2 (en) * | 1999-12-21 | 2001-06-28 | Plastic Logic Limited | Inkjet-fabricated integrated circuits |
| KR100603851B1 (ko) * | 2000-02-12 | 2006-07-24 | 엘지.필립스 엘시디 주식회사 | 반사형 액정 표시장치 |
| US6890853B2 (en) | 2000-04-25 | 2005-05-10 | Tokyo Electron Limited | Method of depositing metal film and metal deposition cluster tool including supercritical drying/cleaning module |
| KR100752212B1 (ko) * | 2000-12-29 | 2007-08-24 | 엘지.필립스 엘시디 주식회사 | 액정표시소자 제조방법 |
| KR100641732B1 (ko) * | 2000-12-29 | 2006-11-06 | 엘지.필립스 엘시디 주식회사 | 엑스-선 검출소자의 제조방법 |
| US6639281B2 (en) | 2001-04-10 | 2003-10-28 | Sarnoff Corporation | Method and apparatus for providing a high-performance active matrix pixel using organic thin-film transistors |
| KR100495702B1 (ko) * | 2001-04-13 | 2005-06-14 | 삼성에스디아이 주식회사 | 유기 전계 발광 표시 장치 및 그 제조 방법 |
| KR100720099B1 (ko) | 2001-06-21 | 2007-05-18 | 삼성전자주식회사 | 박막 트랜지스터 기판 및 그의 제조 방법 |
| JP4002410B2 (ja) * | 2001-06-22 | 2007-10-31 | 日本電気株式会社 | アクティブマトリックス型液晶表示装置の製造方法 |
| TW513593B (en) * | 2001-10-03 | 2002-12-11 | Chunghwa Picture Tubes Ltd | Liquid display device |
| KR100813016B1 (ko) * | 2001-10-22 | 2008-03-13 | 삼성전자주식회사 | 액정표시장치의 제조방법 |
| TW522570B (en) * | 2001-11-06 | 2003-03-01 | Hannstar Display Corp | Manufacturing method of thin film transistor array substrate and its structure |
| US6924086B1 (en) | 2002-02-15 | 2005-08-02 | Tokyo Electron Limited | Developing photoresist with supercritical fluid and developer |
| WO2003070846A2 (en) | 2002-02-15 | 2003-08-28 | Supercritical Systems Inc. | Drying resist with a solvent bath and supercritical co2 |
| AU2002336341A1 (en) | 2002-02-20 | 2003-09-09 | Planar Systems, Inc. | Light sensitive display |
| US7009663B2 (en) | 2003-12-17 | 2006-03-07 | Planar Systems, Inc. | Integrated optical light sensitive active matrix liquid crystal display |
| US7053967B2 (en) | 2002-05-23 | 2006-05-30 | Planar Systems, Inc. | Light sensitive display |
| US7387868B2 (en) | 2002-03-04 | 2008-06-17 | Tokyo Electron Limited | Treatment of a dielectric layer using supercritical CO2 |
| JP4246640B2 (ja) | 2002-03-04 | 2009-04-02 | 東京エレクトロン株式会社 | ウェハ処理において低誘電率材料を不動態化する方法 |
| KR20030079542A (ko) * | 2002-04-04 | 2003-10-10 | 동우 화인켐 주식회사 | 포토레지스트 조성물 |
| US7169540B2 (en) | 2002-04-12 | 2007-01-30 | Tokyo Electron Limited | Method of treatment of porous dielectric films to reduce damage during cleaning |
| KR100436181B1 (ko) * | 2002-04-16 | 2004-06-12 | 엘지.필립스 엘시디 주식회사 | 액정표시장치용 어레이기판 제조방법 |
| KR100482328B1 (ko) * | 2002-04-29 | 2005-04-13 | 엘지.필립스 엘시디 주식회사 | 액티브 매트릭스형 유기 전계발광 표시패널 및 그의제조방법 |
| US20080084374A1 (en) | 2003-02-20 | 2008-04-10 | Planar Systems, Inc. | Light sensitive display |
| US7163380B2 (en) | 2003-07-29 | 2007-01-16 | Tokyo Electron Limited | Control of fluid flow in the processing of an object with a fluid |
| US6921679B2 (en) * | 2003-12-19 | 2005-07-26 | Palo Alto Research Center Incorporated | Electronic device and methods for fabricating an electronic device |
| TWI255535B (en) * | 2004-03-31 | 2006-05-21 | Sanyo Electric Co | Device mounting board and semiconductor apparatus using the same |
| US7773139B2 (en) | 2004-04-16 | 2010-08-10 | Apple Inc. | Image sensor with photosensitive thin film transistors |
| JP2005347411A (ja) * | 2004-06-01 | 2005-12-15 | Sanyo Electric Co Ltd | 素子搭載基板およびそれを用いる半導体装置 |
| US20060045240A1 (en) * | 2004-08-31 | 2006-03-02 | Buchner Gregory C | Method and apparatus for delayed answering of telecommunications request |
| US7307019B2 (en) | 2004-09-29 | 2007-12-11 | Tokyo Electron Limited | Method for supercritical carbon dioxide processing of fluoro-carbon films |
| US7491036B2 (en) | 2004-11-12 | 2009-02-17 | Tokyo Electron Limited | Method and system for cooling a pump |
| US7291565B2 (en) | 2005-02-15 | 2007-11-06 | Tokyo Electron Limited | Method and system for treating a substrate with a high pressure fluid using fluorosilicic acid |
| US7550075B2 (en) | 2005-03-23 | 2009-06-23 | Tokyo Electron Ltd. | Removal of contaminants from a fluid |
| US7442636B2 (en) | 2005-03-30 | 2008-10-28 | Tokyo Electron Limited | Method of inhibiting copper corrosion during supercritical CO2 cleaning |
| US7399708B2 (en) | 2005-03-30 | 2008-07-15 | Tokyo Electron Limited | Method of treating a composite spin-on glass/anti-reflective material prior to cleaning |
| US7789971B2 (en) | 2005-05-13 | 2010-09-07 | Tokyo Electron Limited | Treatment of substrate using functionalizing agent in supercritical carbon dioxide |
| KR100631858B1 (ko) | 2005-12-22 | 2006-10-04 | 제일모직주식회사 | 액정표시장치 칼라필터용으로 사용되는 블랙 매트릭스용카본블랙 분산액 조성물 |
| TWI290771B (en) * | 2006-01-02 | 2007-12-01 | Wintek Corp | TFT substrate, liquid crystal display panel, transflective liquid crystal display device, and methods for the same |
| CN100559569C (zh) * | 2006-01-18 | 2009-11-11 | 胜华科技股份有限公司 | 薄膜晶体管基板、液晶显示面板及半穿透半反射型液晶显示器的制造方法 |
| CN100449737C (zh) * | 2006-02-28 | 2009-01-07 | 友达光电股份有限公司 | 薄膜晶体管阵列基板及其制造方法 |
| US9310923B2 (en) | 2010-12-03 | 2016-04-12 | Apple Inc. | Input device for touch sensitive devices |
| US8928635B2 (en) | 2011-06-22 | 2015-01-06 | Apple Inc. | Active stylus |
| US9329703B2 (en) | 2011-06-22 | 2016-05-03 | Apple Inc. | Intelligent stylus |
| US8638320B2 (en) | 2011-06-22 | 2014-01-28 | Apple Inc. | Stylus orientation detection |
| US9557845B2 (en) | 2012-07-27 | 2017-01-31 | Apple Inc. | Input device for and method of communication with capacitive devices through frequency variation |
| US9176604B2 (en) | 2012-07-27 | 2015-11-03 | Apple Inc. | Stylus device |
| US9652090B2 (en) | 2012-07-27 | 2017-05-16 | Apple Inc. | Device for digital communication through capacitive coupling |
| US10048775B2 (en) | 2013-03-14 | 2018-08-14 | Apple Inc. | Stylus detection and demodulation |
| CN103926752B (zh) * | 2013-07-30 | 2017-04-19 | 上海中航光电子有限公司 | 一种液晶显示器、平面转换模式的阵列基板及其制造方法 |
| US9939935B2 (en) | 2013-07-31 | 2018-04-10 | Apple Inc. | Scan engine for touch controller architecture |
| CN105590848B (zh) * | 2014-11-17 | 2019-02-15 | 上海和辉光电有限公司 | 显示器件制备方法 |
| US10067618B2 (en) | 2014-12-04 | 2018-09-04 | Apple Inc. | Coarse scan and targeted active mode scan for touch |
| US10474277B2 (en) | 2016-05-31 | 2019-11-12 | Apple Inc. | Position-based stylus communication |
| CN109270796B (zh) * | 2017-07-17 | 2020-12-04 | 京东方科技集团股份有限公司 | 阵列基板的制备方法 |
| KR102075891B1 (ko) * | 2017-11-24 | 2020-02-12 | 한국생산기술연구원 | 펄스 자외선을 이용한 폴리실라잔계 소재 박막의 패터닝 및 이의 제조방법 |
| US12153764B1 (en) | 2020-09-25 | 2024-11-26 | Apple Inc. | Stylus with receive architecture for position determination |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6473316A (en) * | 1987-09-14 | 1989-03-17 | Canon Kk | Liquid crystal device |
| KR910010623A (ko) * | 1989-11-18 | 1991-06-29 | 문정환 | 건식 식각 및 습식 식각의 특성을 이용한 접촉 식각 방법 |
| DE69332142T2 (de) * | 1992-12-25 | 2003-03-06 | Sony Corp., Tokio/Tokyo | Substrat mit aktiver Matrix |
| GB2312543B (en) * | 1995-02-23 | 1999-06-30 | Citizen Watch Co Ltd | Liquid crystal display device and method of producing the same |
| KR970011972A (ko) * | 1995-08-11 | 1997-03-29 | 쯔지 하루오 | 투과형 액정 표시 장치 및 그 제조 방법 |
| JPH09244009A (ja) * | 1996-03-14 | 1997-09-19 | Seiko Epson Corp | 液晶表示体及びその製造方法 |
| KR100244450B1 (ko) | 1996-08-30 | 2000-02-01 | 구본준 | 액정표시장치의 기판의 제조방법 및 그 제조방법에 의하여 제조 되는 기판의 구조 |
| DE19712233C2 (de) * | 1996-03-26 | 2003-12-11 | Lg Philips Lcd Co | Flüssigkristallanzeige und Herstellungsverfahren dafür |
| KR100223153B1 (ko) * | 1996-05-23 | 1999-10-15 | 구자홍 | 액티브 매트릭스 액정표시장치의 제조방법 및 액티브매트릭스액정표시장치 |
| JP3317387B2 (ja) | 1996-06-03 | 2002-08-26 | シャープ株式会社 | アクティブマトリクス基板およびその製造方法 |
| JPH1031231A (ja) * | 1996-07-15 | 1998-02-03 | Sony Corp | 反射型ゲストホスト液晶表示装置及びその製造方法 |
| KR100251091B1 (ko) | 1996-11-29 | 2000-04-15 | 구본준 | 액정표시장치의 제조방법 및 그 제조방법으로 제조되는 액정표시장치 |
-
1998
- 1998-11-24 DE DE69839935T patent/DE69839935D1/de not_active Expired - Lifetime
- 1998-11-24 EP EP98122299A patent/EP0919850B1/de not_active Expired - Lifetime
- 1998-11-24 TW TW087119514A patent/TW394986B/zh not_active IP Right Cessation
- 1998-11-25 US US09/199,790 patent/US6284558B1/en not_active Expired - Lifetime
- 1998-11-25 KR KR1019980050553A patent/KR100329094B1/ko not_active Expired - Lifetime
-
2001
- 2001-07-06 US US09/899,073 patent/US20020047121A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| TW394986B (en) | 2000-06-21 |
| EP0919850A3 (de) | 2000-03-22 |
| EP0919850A2 (de) | 1999-06-02 |
| KR19990045543A (ko) | 1999-06-25 |
| US20020047121A1 (en) | 2002-04-25 |
| EP0919850B1 (de) | 2008-08-27 |
| KR100329094B1 (ko) | 2002-10-25 |
| US6284558B1 (en) | 2001-09-04 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition | ||
| 8327 | Change in the person/name/address of the patent owner |
Owner name: NEC CORP., TOKYO, JP |