TW512645B - Ceramic substrate for semiconductor manufacture/inspection apparatus, ceramic heater, electrostatic clamp holder, and substrate for wafer prober - Google Patents
Ceramic substrate for semiconductor manufacture/inspection apparatus, ceramic heater, electrostatic clamp holder, and substrate for wafer prober Download PDFInfo
- Publication number
- TW512645B TW512645B TW090118133A TW90118133A TW512645B TW 512645 B TW512645 B TW 512645B TW 090118133 A TW090118133 A TW 090118133A TW 90118133 A TW90118133 A TW 90118133A TW 512645 B TW512645 B TW 512645B
- Authority
- TW
- Taiwan
- Prior art keywords
- ceramic substrate
- ceramic
- heating element
- substrate
- resistance heating
- Prior art date
Links
- 239000000919 ceramic Substances 0.000 title claims abstract description 172
- 239000000758 substrate Substances 0.000 title claims abstract description 96
- 239000004065 semiconductor Substances 0.000 title claims abstract description 50
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 29
- 238000007689 inspection Methods 0.000 title claims abstract description 10
- 238000010438 heat treatment Methods 0.000 claims description 204
- 239000004020 conductor Substances 0.000 claims description 45
- 238000011049 filling Methods 0.000 claims description 39
- 230000007246 mechanism Effects 0.000 claims description 6
- 239000002245 particle Substances 0.000 abstract description 34
- 235000012431 wafers Nutrition 0.000 description 63
- 239000010410 layer Substances 0.000 description 56
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 39
- 229910052751 metal Inorganic materials 0.000 description 34
- 239000002184 metal Substances 0.000 description 34
- 238000000034 method Methods 0.000 description 26
- 239000002923 metal particle Substances 0.000 description 24
- 229910000679 solder Inorganic materials 0.000 description 24
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 23
- 239000000843 powder Substances 0.000 description 23
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 22
- 229910052770 Uranium Inorganic materials 0.000 description 22
- 150000004767 nitrides Chemical class 0.000 description 22
- 230000008859 change Effects 0.000 description 21
- 229910052759 nickel Inorganic materials 0.000 description 20
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 17
- 229910052709 silver Inorganic materials 0.000 description 17
- 239000004332 silver Substances 0.000 description 17
- 230000015572 biosynthetic process Effects 0.000 description 15
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 14
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 14
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 13
- 239000010931 gold Substances 0.000 description 13
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 12
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 12
- 229910044991 metal oxide Inorganic materials 0.000 description 12
- 150000004706 metal oxides Chemical class 0.000 description 12
- 239000002904 solvent Substances 0.000 description 12
- 229910052776 Thorium Inorganic materials 0.000 description 11
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 11
- 229910052737 gold Inorganic materials 0.000 description 11
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 11
- 229910010271 silicon carbide Inorganic materials 0.000 description 11
- 239000000243 solution Substances 0.000 description 11
- 239000000126 substance Substances 0.000 description 11
- JFALSRSLKYAFGM-UHFFFAOYSA-N uranium(0) Chemical compound [U] JFALSRSLKYAFGM-UHFFFAOYSA-N 0.000 description 11
- 229920005822 acrylic binder Polymers 0.000 description 10
- LWUVWAREOOAHDW-UHFFFAOYSA-N lead silver Chemical compound [Ag].[Pb] LWUVWAREOOAHDW-UHFFFAOYSA-N 0.000 description 10
- 238000005259 measurement Methods 0.000 description 10
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 10
- 239000000523 sample Substances 0.000 description 10
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 9
- 238000010304 firing Methods 0.000 description 9
- RUDFQVOCFDJEEF-UHFFFAOYSA-N oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 9
- 238000012545 processing Methods 0.000 description 9
- 239000000377 silicon dioxide Substances 0.000 description 9
- 235000012239 silicon dioxide Nutrition 0.000 description 9
- 238000003786 synthesis reaction Methods 0.000 description 9
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 9
- 229910052721 tungsten Inorganic materials 0.000 description 9
- 239000010937 tungsten Substances 0.000 description 9
- 239000003463 adsorbent Substances 0.000 description 8
- 239000007864 aqueous solution Substances 0.000 description 8
- 238000007747 plating Methods 0.000 description 8
- 229910052810 boron oxide Inorganic materials 0.000 description 7
- 230000007423 decrease Effects 0.000 description 7
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 7
- 229910052750 molybdenum Inorganic materials 0.000 description 7
- 239000011733 molybdenum Substances 0.000 description 7
- 229910052757 nitrogen Inorganic materials 0.000 description 7
- 238000005245 sintering Methods 0.000 description 7
- 239000011787 zinc oxide Substances 0.000 description 7
- WUOACPNHFRMFPN-SECBINFHSA-N (S)-(-)-alpha-terpineol Chemical compound CC1=CC[C@@H](C(C)(C)O)CC1 WUOACPNHFRMFPN-SECBINFHSA-N 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 6
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 6
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 6
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 6
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 6
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 6
- 229910052778 Plutonium Inorganic materials 0.000 description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 6
- OVKDFILSBMEKLT-UHFFFAOYSA-N alpha-Terpineol Natural products CC(=C)C1(O)CCC(C)=CC1 OVKDFILSBMEKLT-UHFFFAOYSA-N 0.000 description 6
- 229940088601 alpha-terpineol Drugs 0.000 description 6
- 235000019270 ammonium chloride Nutrition 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 6
- 239000011247 coating layer Substances 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- 239000002270 dispersing agent Substances 0.000 description 6
- 238000009826 distribution Methods 0.000 description 6
- 229910000833 kovar Inorganic materials 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- OYEHPCDNVJXUIW-UHFFFAOYSA-N plutonium atom Chemical compound [Pu] OYEHPCDNVJXUIW-UHFFFAOYSA-N 0.000 description 6
- 239000011148 porous material Substances 0.000 description 6
- 229920005989 resin Polymers 0.000 description 6
- 239000011347 resin Substances 0.000 description 6
- 238000007650 screen-printing Methods 0.000 description 6
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 5
- 239000004327 boric acid Substances 0.000 description 5
- 238000001816 cooling Methods 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 229910002804 graphite Inorganic materials 0.000 description 5
- 239000010439 graphite Substances 0.000 description 5
- LGQLOGILCSXPEA-UHFFFAOYSA-L nickel sulfate Chemical compound [Ni+2].[O-]S([O-])(=O)=O LGQLOGILCSXPEA-UHFFFAOYSA-L 0.000 description 5
- 229910000363 nickel(II) sulfate Inorganic materials 0.000 description 5
- 229910052697 platinum Inorganic materials 0.000 description 5
- 239000010970 precious metal Substances 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 230000009467 reduction Effects 0.000 description 5
- KWSLGOVYXMQPPX-UHFFFAOYSA-N 5-[3-(trifluoromethyl)phenyl]-2h-tetrazole Chemical compound FC(F)(F)C1=CC=CC(C2=NNN=N2)=C1 KWSLGOVYXMQPPX-UHFFFAOYSA-N 0.000 description 4
- 229910052580 B4C Inorganic materials 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 150000004645 aluminates Chemical class 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 239000011230 binding agent Substances 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 238000005553 drilling Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 229910000464 lead oxide Inorganic materials 0.000 description 4
- 150000001247 metal acetylides Chemical class 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000002002 slurry Substances 0.000 description 4
- 229910001379 sodium hypophosphite Inorganic materials 0.000 description 4
- VXUYXOFXAQZZMF-UHFFFAOYSA-N titanium(IV) isopropoxide Chemical compound CC(C)O[Ti](OC(C)C)(OC(C)C)OC(C)C VXUYXOFXAQZZMF-UHFFFAOYSA-N 0.000 description 4
- 238000003466 welding Methods 0.000 description 4
- 244000126211 Hericium coralloides Species 0.000 description 3
- VMHLLURERBWHNL-UHFFFAOYSA-M Sodium acetate Chemical compound [Na+].CC([O-])=O VMHLLURERBWHNL-UHFFFAOYSA-M 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 230000005260 alpha ray Effects 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 229910001570 bauxite Inorganic materials 0.000 description 3
- 238000009529 body temperature measurement Methods 0.000 description 3
- 238000007606 doctor blade method Methods 0.000 description 3
- -1 for example Substances 0.000 description 3
- 239000004519 grease Substances 0.000 description 3
- 238000007731 hot pressing Methods 0.000 description 3
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 3
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 3
- 238000005121 nitriding Methods 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 229910052763 palladium Inorganic materials 0.000 description 3
- 238000007639 printing Methods 0.000 description 3
- 239000001632 sodium acetate Substances 0.000 description 3
- 235000017281 sodium acetate Nutrition 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 3
- GHPYJLCQYMAXGG-WCCKRBBISA-N (2R)-2-amino-3-(2-boronoethylsulfanyl)propanoic acid hydrochloride Chemical compound Cl.N[C@@H](CSCCB(O)O)C(O)=O GHPYJLCQYMAXGG-WCCKRBBISA-N 0.000 description 2
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 239000001856 Ethyl cellulose Substances 0.000 description 2
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 239000004372 Polyvinyl alcohol Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 2
- 238000007664 blowing Methods 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 229920002301 cellulose acetate Polymers 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000007772 electroless plating Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229920001249 ethyl cellulose Polymers 0.000 description 2
- 235000019325 ethyl cellulose Nutrition 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 230000004927 fusion Effects 0.000 description 2
- 229920006015 heat resistant resin Polymers 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- 230000007257 malfunction Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 229910052574 oxide ceramic Inorganic materials 0.000 description 2
- 239000011224 oxide ceramic Substances 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229920002451 polyvinyl alcohol Polymers 0.000 description 2
- LJCNRYVRMXRIQR-OLXYHTOASA-L potassium sodium L-tartrate Chemical compound [Na+].[K+].[O-]C(=O)[C@H](O)[C@@H](O)C([O-])=O LJCNRYVRMXRIQR-OLXYHTOASA-L 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 238000004080 punching Methods 0.000 description 2
- 230000031070 response to heat Effects 0.000 description 2
- 238000012552 review Methods 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 235000011006 sodium potassium tartrate Nutrition 0.000 description 2
- 239000004408 titanium dioxide Substances 0.000 description 2
- ZSLUVFAKFWKJRC-IGMARMGPSA-N 232Th Chemical compound [232Th] ZSLUVFAKFWKJRC-IGMARMGPSA-N 0.000 description 1
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 241001391944 Commicarpus scandens Species 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 150000004703 alkoxides Chemical class 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- QAXZPSYBHUXKNN-UHFFFAOYSA-N alumane;plutonium Chemical compound [AlH3].[Pu] QAXZPSYBHUXKNN-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- PONLSTWIGVAHBQ-UHFFFAOYSA-N azane plutonium Chemical compound N.[Pu] PONLSTWIGVAHBQ-UHFFFAOYSA-N 0.000 description 1
- JWVAUCBYEDDGAD-UHFFFAOYSA-N bismuth tin Chemical compound [Sn].[Bi] JWVAUCBYEDDGAD-UHFFFAOYSA-N 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 230000001364 causal effect Effects 0.000 description 1
- 239000001913 cellulose Substances 0.000 description 1
- 229920002678 cellulose Polymers 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000002788 crimping Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000000706 filtrate Substances 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- MSNOMDLPLDYDME-UHFFFAOYSA-N gold nickel Chemical compound [Ni].[Au] MSNOMDLPLDYDME-UHFFFAOYSA-N 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 230000003301 hydrolyzing effect Effects 0.000 description 1
- 238000001095 inductively coupled plasma mass spectrometry Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000010977 jade Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000011021 lapis lazuli Substances 0.000 description 1
- 239000011133 lead Substances 0.000 description 1
- LQBJWKCYZGMFEV-UHFFFAOYSA-N lead tin Chemical compound [Sn].[Pb] LQBJWKCYZGMFEV-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 235000012054 meals Nutrition 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 229910003455 mixed metal oxide Inorganic materials 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052575 non-oxide ceramic Inorganic materials 0.000 description 1
- 239000011225 non-oxide ceramic Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- NRTDAKURTMLAFN-UHFFFAOYSA-N potassium;gold(3+);tetracyanide Chemical compound [K+].[Au+3].N#[C-].N#[C-].N#[C-].N#[C-] NRTDAKURTMLAFN-UHFFFAOYSA-N 0.000 description 1
- 238000004663 powder metallurgy Methods 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000002285 radioactive effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000001509 sodium citrate Substances 0.000 description 1
- NLJMYIDDQXHKNR-UHFFFAOYSA-K sodium citrate Chemical compound O.O.[Na+].[Na+].[Na+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O NLJMYIDDQXHKNR-UHFFFAOYSA-K 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000001694 spray drying Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000002562 thickening agent Substances 0.000 description 1
- 101150095744 tin-9.1 gene Proteins 0.000 description 1
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/10—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
- H05B3/12—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
- H05B3/14—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material the material being non-metallic
- H05B3/141—Conductive ceramics, e.g. metal oxides, metal carbides, barium titanate, ferrites, zirconia, vitrous compounds
- H05B3/143—Conductive ceramics, e.g. metal oxides, metal carbides, barium titanate, ferrites, zirconia, vitrous compounds applied to semiconductors, e.g. wafers heating
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
- H05B3/22—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
- H05B3/26—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor mounted on insulating base
- H05B3/265—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor mounted on insulating base the insulating base being an inorganic material, e.g. ceramic
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B2203/00—Aspects relating to Ohmic resistive heating covered by group H05B3/00
- H05B2203/013—Heaters using resistive films or coatings
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B2203/00—Aspects relating to Ohmic resistive heating covered by group H05B3/00
- H05B2203/017—Manufacturing methods or apparatus for heaters
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Resistance Heating (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
- Surface Heating Bodies (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000223767 | 2000-07-25 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW512645B true TW512645B (en) | 2002-12-01 |
Family
ID=18717815
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW090118133A TW512645B (en) | 2000-07-25 | 2001-07-25 | Ceramic substrate for semiconductor manufacture/inspection apparatus, ceramic heater, electrostatic clamp holder, and substrate for wafer prober |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US6815646B2 (ja) |
| EP (1) | EP1248293A1 (ja) |
| TW (1) | TW512645B (ja) |
| WO (1) | WO2002009171A1 (ja) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI466847B (zh) * | 2010-10-29 | 2015-01-01 | Nhk Spring Co Ltd | 陶瓷燒結體之製造方法、陶瓷燒結體及陶瓷加熱器 |
| TWI494575B (zh) * | 2012-06-18 | 2015-08-01 | Sharp Kk | Check the device |
| TWI683391B (zh) * | 2015-08-20 | 2020-01-21 | 日商日本碍子股份有限公司 | 靜電夾具加熱器 |
Families Citing this family (89)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6900149B1 (en) * | 1999-09-06 | 2005-05-31 | Ibiden Co., Ltd. | Carbon-containing aluminum nitride sintered compact and ceramic substrate for use in equipment for manufacturing or inspecting semiconductor |
| US6861165B2 (en) * | 2000-02-24 | 2005-03-01 | Ibiden Co., Ltd. | Aluminum nitride sintered compact, ceramic substrate, ceramic heater and electrostatic chuck |
| JP2001247382A (ja) * | 2000-03-06 | 2001-09-11 | Ibiden Co Ltd | セラミック基板 |
| US6888106B2 (en) * | 2000-04-07 | 2005-05-03 | Ibiden Co., Ltd. | Ceramic heater |
| EP1296360A1 (en) * | 2000-05-26 | 2003-03-26 | Ibiden Co., Ltd. | Semiconductor manufacturing and inspecting device |
| JP3516392B2 (ja) * | 2000-06-16 | 2004-04-05 | イビデン株式会社 | 半導体製造・検査装置用ホットプレート |
| EP1229572A1 (en) * | 2000-07-04 | 2002-08-07 | Ibiden Co., Ltd. | Hot plate for semiconductor manufacture and testing |
| US6815646B2 (en) * | 2000-07-25 | 2004-11-09 | Ibiden Co., Ltd. | Ceramic substrate for semiconductor manufacture/inspection apparatus, ceramic heater, electrostatic clampless holder, and substrate for wafer prober |
| AU2003274521A1 (en) * | 2002-11-22 | 2004-06-18 | Koninklijke Philips Electronics N.V. | Sol-gel based heating element |
| JP3992018B2 (ja) * | 2003-07-23 | 2007-10-17 | 松下電器産業株式会社 | プラズマ処理装置 |
| JP2005072559A (ja) * | 2003-08-05 | 2005-03-17 | Dainippon Screen Mfg Co Ltd | 基板処理装置および基板処理方法 |
| US20060088692A1 (en) * | 2004-10-22 | 2006-04-27 | Ibiden Co., Ltd. | Ceramic plate for a semiconductor producing/examining device |
| JP4869610B2 (ja) * | 2005-03-17 | 2012-02-08 | 東京エレクトロン株式会社 | 基板保持部材及び基板処理装置 |
| JP2007042910A (ja) * | 2005-08-04 | 2007-02-15 | Sumitomo Electric Ind Ltd | ウェハプローバ用チャックトップおよびそれを搭載したウェハプローバ |
| US8226769B2 (en) * | 2006-04-27 | 2012-07-24 | Applied Materials, Inc. | Substrate support with electrostatic chuck having dual temperature zones |
| JP4762208B2 (ja) * | 2006-07-19 | 2011-08-31 | 日本碍子株式会社 | 静電チャックヒータ |
| SE530400C2 (sv) | 2006-10-09 | 2008-05-20 | Sandvik Intellectual Property | Uppvärmningsenhet med ett motståndselement format som ett ledningsmönster |
| JP2009006350A (ja) * | 2007-06-27 | 2009-01-15 | Sony Corp | レーザ加工装置とその加工方法、デブリ回収機構とその回収方法、並びに表示パネルの製造方法 |
| US8993939B2 (en) * | 2008-01-18 | 2015-03-31 | Momentive Performance Materials Inc. | Resistance heater |
| DE102008036837A1 (de) * | 2008-08-07 | 2010-02-18 | Epcos Ag | Sensorvorrichtung und Verfahren zur Herstellung |
| US8405005B2 (en) * | 2009-02-04 | 2013-03-26 | Mattson Technology, Inc. | Electrostatic chuck system and process for radially tuning the temperature profile across the surface of a substrate |
| US8785821B2 (en) * | 2009-07-06 | 2014-07-22 | Sokudo Co., Ltd. | Substrate processing apparatus with heater element held by vacuum |
| US10242890B2 (en) * | 2011-08-08 | 2019-03-26 | Applied Materials, Inc. | Substrate support with heater |
| US9132436B2 (en) | 2012-09-21 | 2015-09-15 | Applied Materials, Inc. | Chemical control features in wafer process equipment |
| US10256079B2 (en) | 2013-02-08 | 2019-04-09 | Applied Materials, Inc. | Semiconductor processing systems having multiple plasma configurations |
| US9966240B2 (en) | 2014-10-14 | 2018-05-08 | Applied Materials, Inc. | Systems and methods for internal surface conditioning assessment in plasma processing equipment |
| US9355922B2 (en) | 2014-10-14 | 2016-05-31 | Applied Materials, Inc. | Systems and methods for internal surface conditioning in plasma processing equipment |
| US11637002B2 (en) | 2014-11-26 | 2023-04-25 | Applied Materials, Inc. | Methods and systems to enhance process uniformity |
| US10573496B2 (en) | 2014-12-09 | 2020-02-25 | Applied Materials, Inc. | Direct outlet toroidal plasma source |
| US20160225652A1 (en) | 2015-02-03 | 2016-08-04 | Applied Materials, Inc. | Low temperature chuck for plasma processing systems |
| WO2016135565A1 (en) * | 2015-02-23 | 2016-09-01 | M Cubed Technologies, Inc. | Film electrode for electrostatic chuck |
| US10631372B2 (en) * | 2015-04-24 | 2020-04-21 | Guanping Feng | Low-power electro-thermal film devices and methods for making the same |
| TWI808334B (zh) * | 2015-08-06 | 2023-07-11 | 美商應用材料股份有限公司 | 工件握持器 |
| US9741593B2 (en) | 2015-08-06 | 2017-08-22 | Applied Materials, Inc. | Thermal management systems and methods for wafer processing systems |
| US9691645B2 (en) * | 2015-08-06 | 2017-06-27 | Applied Materials, Inc. | Bolted wafer chuck thermal management systems and methods for wafer processing systems |
| US10504700B2 (en) | 2015-08-27 | 2019-12-10 | Applied Materials, Inc. | Plasma etching systems and methods with secondary plasma injection |
| KR20170036165A (ko) * | 2015-09-23 | 2017-04-03 | 삼성전자주식회사 | 기판 지지 유닛 및 이를 포함하는 기판 처리 장치 |
| JP6703872B2 (ja) * | 2016-03-28 | 2020-06-03 | 日本碍子株式会社 | ヒータ及びそのヒータを備えるハニカム構造体 |
| US10504754B2 (en) | 2016-05-19 | 2019-12-10 | Applied Materials, Inc. | Systems and methods for improved semiconductor etching and component protection |
| US10522371B2 (en) | 2016-05-19 | 2019-12-31 | Applied Materials, Inc. | Systems and methods for improved semiconductor etching and component protection |
| JP6693808B2 (ja) * | 2016-05-25 | 2020-05-13 | 日本特殊陶業株式会社 | 電極内蔵型載置台構造 |
| US9865484B1 (en) | 2016-06-29 | 2018-01-09 | Applied Materials, Inc. | Selective etch using material modification and RF pulsing |
| US10636690B2 (en) * | 2016-07-20 | 2020-04-28 | Applied Materials, Inc. | Laminated top plate of a workpiece carrier in micromechanical and semiconductor processing |
| US10629473B2 (en) | 2016-09-09 | 2020-04-21 | Applied Materials, Inc. | Footing removal for nitride spacer |
| JP6847610B2 (ja) * | 2016-09-14 | 2021-03-24 | 株式会社Ｓｃｒｅｅｎホールディングス | 熱処理装置 |
| JP6758143B2 (ja) * | 2016-09-29 | 2020-09-23 | 日本特殊陶業株式会社 | 加熱装置 |
| US10679873B2 (en) * | 2016-09-30 | 2020-06-09 | Ngk Spark Plug Co., Ltd. | Ceramic heater |
| US9934942B1 (en) | 2016-10-04 | 2018-04-03 | Applied Materials, Inc. | Chamber with flow-through source |
| US10546729B2 (en) | 2016-10-04 | 2020-01-28 | Applied Materials, Inc. | Dual-channel showerhead with improved profile |
| US10163696B2 (en) | 2016-11-11 | 2018-12-25 | Applied Materials, Inc. | Selective cobalt removal for bottom up gapfill |
| US10026621B2 (en) | 2016-11-14 | 2018-07-17 | Applied Materials, Inc. | SiN spacer profile patterning |
| US10431429B2 (en) | 2017-02-03 | 2019-10-01 | Applied Materials, Inc. | Systems and methods for radial and azimuthal control of plasma uniformity |
| US10319739B2 (en) | 2017-02-08 | 2019-06-11 | Applied Materials, Inc. | Accommodating imperfectly aligned memory holes |
| JP6831269B2 (ja) * | 2017-02-28 | 2021-02-17 | 日本特殊陶業株式会社 | セラミックヒータ |
| US10943834B2 (en) | 2017-03-13 | 2021-03-09 | Applied Materials, Inc. | Replacement contact process |
| US11276590B2 (en) | 2017-05-17 | 2022-03-15 | Applied Materials, Inc. | Multi-zone semiconductor substrate supports |
| US11276559B2 (en) | 2017-05-17 | 2022-03-15 | Applied Materials, Inc. | Semiconductor processing chamber for multiple precursor flow |
| JP7176860B6 (ja) | 2017-05-17 | 2022-12-16 | アプライド マテリアルズ インコーポレイテッド | 前駆体の流れを改善する半導体処理チャンバ |
| US10920320B2 (en) | 2017-06-16 | 2021-02-16 | Applied Materials, Inc. | Plasma health determination in semiconductor substrate processing reactors |
| US10541246B2 (en) | 2017-06-26 | 2020-01-21 | Applied Materials, Inc. | 3D flash memory cells which discourage cross-cell electrical tunneling |
| US10727080B2 (en) | 2017-07-07 | 2020-07-28 | Applied Materials, Inc. | Tantalum-containing material removal |
| US10541184B2 (en) | 2017-07-11 | 2020-01-21 | Applied Materials, Inc. | Optical emission spectroscopic techniques for monitoring etching |
| US10043674B1 (en) | 2017-08-04 | 2018-08-07 | Applied Materials, Inc. | Germanium etching systems and methods |
| US10297458B2 (en) | 2017-08-07 | 2019-05-21 | Applied Materials, Inc. | Process window widening using coated parts in plasma etch processes |
| US10903054B2 (en) | 2017-12-19 | 2021-01-26 | Applied Materials, Inc. | Multi-zone gas distribution systems and methods |
| US11328909B2 (en) | 2017-12-22 | 2022-05-10 | Applied Materials, Inc. | Chamber conditioning and removal processes |
| US10854426B2 (en) | 2018-01-08 | 2020-12-01 | Applied Materials, Inc. | Metal recess for semiconductor structures |
| US10679870B2 (en) | 2018-02-15 | 2020-06-09 | Applied Materials, Inc. | Semiconductor processing chamber multistage mixing apparatus |
| US10964512B2 (en) | 2018-02-15 | 2021-03-30 | Applied Materials, Inc. | Semiconductor processing chamber multistage mixing apparatus and methods |
| TWI716818B (zh) | 2018-02-28 | 2021-01-21 | 美商應用材料股份有限公司 | 形成氣隙的系統及方法 |
| US10593560B2 (en) | 2018-03-01 | 2020-03-17 | Applied Materials, Inc. | Magnetic induction plasma source for semiconductor processes and equipment |
| US10319600B1 (en) | 2018-03-12 | 2019-06-11 | Applied Materials, Inc. | Thermal silicon etch |
| US10497573B2 (en) | 2018-03-13 | 2019-12-03 | Applied Materials, Inc. | Selective atomic layer etching of semiconductor materials |
| US10573527B2 (en) | 2018-04-06 | 2020-02-25 | Applied Materials, Inc. | Gas-phase selective etching systems and methods |
| US10490406B2 (en) | 2018-04-10 | 2019-11-26 | Appled Materials, Inc. | Systems and methods for material breakthrough |
| US10699879B2 (en) | 2018-04-17 | 2020-06-30 | Applied Materials, Inc. | Two piece electrode assembly with gap for plasma control |
| US10886137B2 (en) | 2018-04-30 | 2021-01-05 | Applied Materials, Inc. | Selective nitride removal |
| US10755941B2 (en) | 2018-07-06 | 2020-08-25 | Applied Materials, Inc. | Self-limiting selective etching systems and methods |
| US10872778B2 (en) | 2018-07-06 | 2020-12-22 | Applied Materials, Inc. | Systems and methods utilizing solid-phase etchants |
| US10672642B2 (en) | 2018-07-24 | 2020-06-02 | Applied Materials, Inc. | Systems and methods for pedestal configuration |
| US10892198B2 (en) | 2018-09-14 | 2021-01-12 | Applied Materials, Inc. | Systems and methods for improved performance in semiconductor processing |
| US11049755B2 (en) | 2018-09-14 | 2021-06-29 | Applied Materials, Inc. | Semiconductor substrate supports with embedded RF shield |
| US11062887B2 (en) | 2018-09-17 | 2021-07-13 | Applied Materials, Inc. | High temperature RF heater pedestals |
| US11417534B2 (en) | 2018-09-21 | 2022-08-16 | Applied Materials, Inc. | Selective material removal |
| US11682560B2 (en) | 2018-10-11 | 2023-06-20 | Applied Materials, Inc. | Systems and methods for hafnium-containing film removal |
| US11121002B2 (en) | 2018-10-24 | 2021-09-14 | Applied Materials, Inc. | Systems and methods for etching metals and metal derivatives |
| US11437242B2 (en) | 2018-11-27 | 2022-09-06 | Applied Materials, Inc. | Selective removal of silicon-containing materials |
| US11721527B2 (en) | 2019-01-07 | 2023-08-08 | Applied Materials, Inc. | Processing chamber mixing systems |
| US10920319B2 (en) | 2019-01-11 | 2021-02-16 | Applied Materials, Inc. | Ceramic showerheads with conductive electrodes |
Family Cites Families (65)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6635853B2 (en) * | 1909-08-09 | 2003-10-21 | Ibiden Co., Ltd. | Hot plate unit |
| JPS58218143A (ja) * | 1982-06-11 | 1983-12-19 | Ngk Spark Plug Co Ltd | Ｉｃパツケ−ジの製造法 |
| JPS60204637A (ja) | 1984-03-19 | 1985-10-16 | Nippon Electric Glass Co Ltd | 低融点封着用組成物 |
| JPH0825790B2 (ja) | 1984-06-27 | 1996-03-13 | 京セラ株式会社 | 半導体素子パッケージ用ムライト焼結体およびその製造方法 |
| JPH05330924A (ja) | 1992-06-02 | 1993-12-14 | Toshiba Corp | 窒化アルミニウム基板の製造方法および焼成容器 |
| JPH0680473A (ja) | 1992-08-27 | 1994-03-22 | Toshiba Corp | 窒化アルミニウム基板の製造方法 |
| JPH06151332A (ja) | 1992-11-12 | 1994-05-31 | Ngk Insulators Ltd | セラミックスヒーター |
| JP3093897B2 (ja) * | 1992-11-13 | 2000-10-03 | 東芝セラミックス株式会社 | 高純度アルミナセラミックス及びその製造方法 |
| JPH06219848A (ja) | 1993-01-21 | 1994-08-09 | Sekisui Chem Co Ltd | 窒化アルミニウム焼結体の製造方法 |
| JPH06219844A (ja) | 1993-01-27 | 1994-08-09 | Showa Denko Kk | ＡｌＮ焼結体およびその製造方法 |
| JP3385059B2 (ja) | 1993-04-09 | 2003-03-10 | 三井化学株式会社 | 高純度窒化アルミニウム粉末の製造方法 |
| KR100204268B1 (ko) | 1994-02-03 | 1999-06-15 | 시바타 마사하루 | 질화알루미늄 소결체 및 이의 제조방법 |
| JPH08130237A (ja) | 1994-11-01 | 1996-05-21 | Fuji Electric Co Ltd | プラズマ処理装置 |
| JP3670416B2 (ja) | 1995-11-01 | 2005-07-13 | 日本碍子株式会社 | 金属包含材および静電チャック |
| JP3457495B2 (ja) | 1996-03-29 | 2003-10-20 | 日本碍子株式会社 | 窒化アルミニウム焼結体、金属埋設品、電子機能材料および静電チャック |
| WO2000069219A1 (en) * | 1999-05-07 | 2000-11-16 | Ibiden Co., Ltd. | Hot plate and method of producing the same |
| JP2001118664A (ja) | 1999-08-09 | 2001-04-27 | Ibiden Co Ltd | セラミックヒータ |
| US6835916B2 (en) * | 1999-08-09 | 2004-12-28 | Ibiden, Co., Ltd | Ceramic heater |
| WO2001013423A1 (en) * | 1999-08-10 | 2001-02-22 | Ibiden Co., Ltd. | Semiconductor production device ceramic plate |
| JP3381909B2 (ja) * | 1999-08-10 | 2003-03-04 | イビデン株式会社 | 半導体製造・検査装置用セラミックヒータ |
| US6900149B1 (en) * | 1999-09-06 | 2005-05-31 | Ibiden Co., Ltd. | Carbon-containing aluminum nitride sintered compact and ceramic substrate for use in equipment for manufacturing or inspecting semiconductor |
| EP1199908A4 (en) * | 1999-10-22 | 2003-01-22 | Ibiden Co Ltd | CERAMIC HEATING PLATE |
| WO2001035459A1 (fr) * | 1999-11-10 | 2001-05-17 | Ibiden Co., Ltd. | Substrat en ceramique |
| DE60021848T2 (de) * | 1999-11-19 | 2006-06-08 | Ibiden Co., Ltd. | Keramisches heizgerät |
| EP1137321A1 (en) * | 1999-11-30 | 2001-09-26 | Ibiden Co., Ltd. | Ceramic heater |
| EP1383167A1 (en) * | 1999-12-09 | 2004-01-21 | Ibiden Co., Ltd. | Ceramic plate for semiconductor producing/inspecting apparatus |
| JP2001237053A (ja) * | 1999-12-14 | 2001-08-31 | Ibiden Co Ltd | 半導体製造・検査装置用セラミックヒータおよび支持ピン |
| US20040016746A1 (en) * | 1999-12-29 | 2004-01-29 | Ibiden Co., Ltd. | Ceramic heater |
| JP3228923B2 (ja) * | 2000-01-18 | 2001-11-12 | イビデン株式会社 | 半導体製造・検査装置用セラミックヒータ |
| JP3228924B2 (ja) * | 2000-01-21 | 2001-11-12 | イビデン株式会社 | 半導体製造・検査装置用セラミックヒータ |
| WO2001058828A1 (en) * | 2000-02-07 | 2001-08-16 | Ibiden Co., Ltd. | Ceramic substrate for semiconductor production/inspection device |
| WO2001059833A1 (en) * | 2000-02-08 | 2001-08-16 | Ibiden Co., Ltd. | Ceramic board for semiconductor production and inspection devices |
| EP1187185A1 (en) * | 2000-02-10 | 2002-03-13 | Ibiden Co., Ltd. | Hot plate unit |
| US6861165B2 (en) * | 2000-02-24 | 2005-03-01 | Ibiden Co., Ltd. | Aluminum nitride sintered compact, ceramic substrate, ceramic heater and electrostatic chuck |
| JP2001244320A (ja) * | 2000-02-25 | 2001-09-07 | Ibiden Co Ltd | セラミック基板およびその製造方法 |
| US20030098299A1 (en) * | 2000-03-06 | 2003-05-29 | Ibiden Co., Ltd. | Ceramic heater |
| EP1205451A1 (en) * | 2000-03-07 | 2002-05-15 | Ibiden Co., Ltd. | Ceramic substrate for manufacture/inspection of semiconductor |
| JP2001253777A (ja) * | 2000-03-13 | 2001-09-18 | Ibiden Co Ltd | セラミック基板 |
| WO2002091458A1 (fr) * | 2000-03-15 | 2002-11-14 | Ibiden Co., Ltd. | Procede relatif a l'elaboration de mandrins electrostatiques et procede relatif a l'elaboration d'elements chauffants en ceramique |
| US20040149718A1 (en) * | 2000-04-07 | 2004-08-05 | Yasutaka Ito | Ceramic heater |
| US6888106B2 (en) * | 2000-04-07 | 2005-05-03 | Ibiden Co., Ltd. | Ceramic heater |
| US20030160042A1 (en) * | 2000-04-10 | 2003-08-28 | Yasuji Hiramatsu | Ceramic board |
| JP3565496B2 (ja) * | 2000-04-13 | 2004-09-15 | イビデン株式会社 | セラミックヒータ、静電チャックおよびウエハプローバ |
| WO2001080601A1 (fr) * | 2000-04-14 | 2001-10-25 | Ibiden Co., Ltd. | Dispositif de chauffage en ceramique |
| JP2001302330A (ja) * | 2000-04-24 | 2001-10-31 | Ibiden Co Ltd | セラミック基板 |
| EP1225790A1 (en) * | 2000-05-02 | 2002-07-24 | Ibiden Co., Ltd. | Ceramic heater |
| JP2002025758A (ja) * | 2000-05-02 | 2002-01-25 | Ibiden Co Ltd | ホットプレートユニット |
| WO2001084885A1 (en) * | 2000-05-02 | 2001-11-08 | Ibiden Co., Ltd. | Ceramic heater |
| WO2001086717A1 (en) * | 2000-05-10 | 2001-11-15 | Ibiden Co., Ltd. | Electrostatic chuck |
| EP1296360A1 (en) * | 2000-05-26 | 2003-03-26 | Ibiden Co., Ltd. | Semiconductor manufacturing and inspecting device |
| JP3618640B2 (ja) * | 2000-06-15 | 2005-02-09 | イビデン株式会社 | 半導体製造・検査装置用ホットプレート |
| JP3516392B2 (ja) * | 2000-06-16 | 2004-04-05 | イビデン株式会社 | 半導体製造・検査装置用ホットプレート |
| US6897414B2 (en) * | 2000-07-03 | 2005-05-24 | Ibiden Co., Ltd. | Ceramic heater for semiconductor manufacturing/testing apparatus |
| EP1229572A1 (en) * | 2000-07-04 | 2002-08-07 | Ibiden Co., Ltd. | Hot plate for semiconductor manufacture and testing |
| WO2002007195A1 (fr) * | 2000-07-19 | 2002-01-24 | Ibiden Co., Ltd. | Dispositif chauffant ceramique pour la fabrication/verification de semi-conducteurs, son procede de fabrication, et son systeme de fabrication |
| US6815646B2 (en) * | 2000-07-25 | 2004-11-09 | Ibiden Co., Ltd. | Ceramic substrate for semiconductor manufacture/inspection apparatus, ceramic heater, electrostatic clampless holder, and substrate for wafer prober |
| US6878906B2 (en) * | 2000-08-30 | 2005-04-12 | Ibiden Co., Ltd. | Ceramic heater for semiconductor manufacturing and inspecting equipment |
| JP2002076102A (ja) * | 2000-08-31 | 2002-03-15 | Ibiden Co Ltd | セラミック基板 |
| US20040035846A1 (en) * | 2000-09-13 | 2004-02-26 | Yasuji Hiramatsu | Ceramic heater for semiconductor manufacturing and inspecting equipment |
| JP2002160974A (ja) * | 2000-11-22 | 2002-06-04 | Ibiden Co Ltd | 窒化アルミニウム焼結体、窒化アルミニウム焼結体の製造方法、セラミック基板およびセラミック基板の製造方法 |
| JPWO2002043441A1 (ja) * | 2000-11-24 | 2004-04-02 | イビデン株式会社 | セラミックヒータ、および、セラミックヒータの製造方法 |
| JP2002170651A (ja) * | 2000-11-29 | 2002-06-14 | Ibiden Co Ltd | セラミックヒータ |
| US20030000938A1 (en) * | 2000-12-01 | 2003-01-02 | Yanling Zhou | Ceramic heater, and ceramic heater resistor paste |
| US6960743B2 (en) * | 2000-12-05 | 2005-11-01 | Ibiden Co., Ltd. | Ceramic substrate for semiconductor manufacturing, and method of manufacturing the ceramic substrate |
| US20040021475A1 (en) * | 2001-06-06 | 2004-02-05 | Atsushi Ito | Wafer prober |
-
2001
- 2001-07-25 US US10/088,098 patent/US6815646B2/en not_active Expired - Lifetime
- 2001-07-25 EP EP20010984368 patent/EP1248293A1/en not_active Withdrawn
- 2001-07-25 WO PCT/JP2001/006395 patent/WO2002009171A1/ja not_active Ceased
- 2001-07-25 TW TW090118133A patent/TW512645B/zh active
-
2004
- 2004-08-16 US US10/918,351 patent/US20050011878A1/en not_active Abandoned
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI466847B (zh) * | 2010-10-29 | 2015-01-01 | Nhk Spring Co Ltd | 陶瓷燒結體之製造方法、陶瓷燒結體及陶瓷加熱器 |
| US10462850B2 (en) | 2010-10-29 | 2019-10-29 | Nhk Spring Co., Ltd. | Method of manufacturing ceramic sintered body, ceramic sintered body, and ceramic heater |
| TWI494575B (zh) * | 2012-06-18 | 2015-08-01 | Sharp Kk | Check the device |
| TWI683391B (zh) * | 2015-08-20 | 2020-01-21 | 日商日本碍子股份有限公司 | 靜電夾具加熱器 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20030015515A1 (en) | 2003-01-23 |
| WO2002009171A1 (en) | 2002-01-31 |
| US6815646B2 (en) | 2004-11-09 |
| US20050011878A1 (en) | 2005-01-20 |
| EP1248293A1 (en) | 2002-10-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TW512645B (en) | Ceramic substrate for semiconductor manufacture/inspection apparatus, ceramic heater, electrostatic clamp holder, and substrate for wafer prober | |
| TW472500B (en) | Ceramic substrate, ceramic heater, electrostatic chuck and wafer probe for semiconductor manufacturing and checking device | |
| TW480895B (en) | Ceramic heater | |
| JP3228923B2 (ja) | 半導体製造・検査装置用セラミックヒータ | |
| EP1394847A1 (en) | Wafer prober | |
| US7011874B2 (en) | Ceramic substrate for semiconductor production and inspection devices | |
| WO2002019399A1 (en) | Ceramic substrate for semiconductor production and inspection | |
| WO2001041508A1 (en) | Ceramic heater | |
| WO2001091166A1 (en) | Semiconductor manufacturing and inspecting device | |
| WO2001062686A1 (en) | Aluminum nitride sintered compact, ceramic substrate, ceramic heater and electrostatic chuck | |
| TW449845B (en) | Wafer detector | |
| WO2001080307A1 (en) | Ceramic substrate | |
| WO2001097263A1 (fr) | Plaque chauffante | |
| JP3372235B2 (ja) | 半導体製造・検査装置用セラミック基板 | |
| JP2001257200A (ja) | 半導体製造・検査装置用セラミック基板 | |
| JP2004153288A (ja) | ウエハプローバ装置 | |
| JP3813420B2 (ja) | ウエハプローバ装置 | |
| JP3584203B2 (ja) | 半導体製造・検査装置用セラミック基板 | |
| JP3514384B2 (ja) | ウエハプローバおよびウエハプローバに使用されるセラミック基板 | |
| JP3681628B2 (ja) | ウエハプローバ装置およびウエハプローバ装置に使用されるセラミック基板 | |
| JP2001118912A (ja) | 半導体製造・検査装置用セラミック基板、セラミックヒータ、静電チャック、ウエハプローバ | |
| JP2001358205A (ja) | 半導体製造・検査装置 | |
| JPWO2002009171A1 (ja) | 半導体製造・検査装置用セラミック基板、セラミックヒータ、静電チャックおよびウエハプローバ用基板 | |
| JP3396468B2 (ja) | ウエハプローバおよびウエハプローバに使用されるセラミック基板 | |
| JP2001257196A (ja) | 半導体製造・検査装置用セラミック基板 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GD4A | Issue of patent certificate for granted invention patent |