[go: up one dir, main page]

TW200700935A - Formulations for cleaning ion-implanted photoresist layers from microelectronic devices - Google Patents

Formulations for cleaning ion-implanted photoresist layers from microelectronic devices

Info

Publication number
TW200700935A
TW200700935A TW095113363A TW95113363A TW200700935A TW 200700935 A TW200700935 A TW 200700935A TW 095113363 A TW095113363 A TW 095113363A TW 95113363 A TW95113363 A TW 95113363A TW 200700935 A TW200700935 A TW 200700935A
Authority
TW
Taiwan
Prior art keywords
microelectronic devices
formulations
implanted photoresist
photoresist layers
composition
Prior art date
Application number
TW095113363A
Other languages
English (en)
Inventor
Pamela M Visintin
Michael B Korzenski
Thomas H Baum
Original Assignee
Advanced Tech Materials
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Tech Materials filed Critical Advanced Tech Materials
Publication of TW200700935A publication Critical patent/TW200700935A/zh

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3046Mechanical treatment, e.g. grinding, polishing, cutting using blasting, e.g. sand-blasting
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/02Inorganic compounds ; Elemental compounds
    • C11D3/04Water-soluble compounds
    • C11D3/042Acids
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16Organic compounds
    • C11D3/20Organic compounds containing oxygen
    • C11D3/2075Carboxylic acids-salts thereof
    • C11D3/2086Hydroxy carboxylic acids-salts thereof
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16Organic compounds
    • C11D3/24Organic compounds containing halogen
    • C11D3/245Organic compounds containing halogen containing fluorine
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16Organic compounds
    • C11D3/26Organic compounds containing nitrogen
    • C11D3/28Heterocyclic compounds containing nitrogen in the ring
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16Organic compounds
    • C11D3/26Organic compounds containing nitrogen
    • C11D3/30Amines; Substituted amines ; Quaternized amines
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16Organic compounds
    • C11D3/34Organic compounds containing sulfur
    • C11D3/3427Organic compounds containing sulfur containing thiol, mercapto or sulfide groups, e.g. thioethers or mercaptales
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16Organic compounds
    • C11D3/36Organic compounds containing phosphorus
    • C11D3/367Organic compounds containing phosphorus containing halogen
    • C11D3/368Organic compounds containing phosphorus containing halogen containing fluorine
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/43Solvents
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02Inorganic compounds
    • C11D7/04Water-soluble compounds
    • C11D7/08Acids
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22Organic compounds
    • C11D7/26Organic compounds containing oxygen
    • C11D7/261Alcohols; Phenols
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22Organic compounds
    • C11D7/28Organic compounds containing halogen
    • C11D7/30Halogenated hydrocarbons
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22Organic compounds
    • C11D7/32Organic compounds containing nitrogen
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22Organic compounds
    • C11D7/34Organic compounds containing sulfur
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22Organic compounds
    • C11D7/36Organic compounds containing phosphorus
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0279Ionlithographic processes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26Bombardment with radiation
    • H01L21/263Bombardment with radiation with high-energy radiation
    • H01L21/265Bombardment with radiation with high-energy radiation producing ion implantation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604Chemical etching
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10Objects to be cleaned
    • C11D2111/14Hard surfaces
    • C11D2111/22Electronic devices, e.g. PCBs or semiconductors
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22Organic compounds
    • C11D7/32Organic compounds containing nitrogen
    • C11D7/3209Amines or imines with one to four nitrogen atoms; Quaternized amines
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22Organic compounds
    • C11D7/32Organic compounds containing nitrogen
    • C11D7/3218Alkanolamines or alkanolimines
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22Organic compounds
    • C11D7/32Organic compounds containing nitrogen
    • C11D7/3281Heterocyclic compounds

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Emergency Medicine (AREA)
  • Inorganic Chemistry (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Toxicology (AREA)
  • General Chemical & Material Sciences (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW095113363A 2005-04-15 2006-04-14 Formulations for cleaning ion-implanted photoresist layers from microelectronic devices TW200700935A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US67215705P 2005-04-15 2005-04-15

Publications (1)

Publication Number Publication Date
TW200700935A true TW200700935A (en) 2007-01-01

Family

ID=37115816

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095113363A TW200700935A (en) 2005-04-15 2006-04-14 Formulations for cleaning ion-implanted photoresist layers from microelectronic devices

Country Status (7)

Country Link
US (1) US8114220B2 (zh)
EP (1) EP1879704A2 (zh)
JP (1) JP2008537343A (zh)
KR (1) KR20070120609A (zh)
CN (1) CN101198416A (zh)
TW (1) TW200700935A (zh)
WO (1) WO2006113621A2 (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9230823B1 (en) 2014-08-05 2016-01-05 Chipbond Technology Corporation Method of photoresist strip
TWI803551B (zh) * 2017-12-27 2023-06-01 日商東京應化工業股份有限公司 去除基板上之有機系硬化膜之方法,及酸性洗淨液

Families Citing this family (60)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050107274A1 (en) * 2003-10-14 2005-05-19 Jerome Daviot Removal of post etch residues and copper contamination from low-k dielectrics using supercritical CO2 with diketone additives
JP4988165B2 (ja) * 2005-03-11 2012-08-01 関東化学株式会社 フォトレジスト剥離液組成物及びフォトレジストの剥離方法
WO2007120259A2 (en) * 2005-11-08 2007-10-25 Advanced Technology Materials, Inc. Formulations for removing copper-containing post-etch residue from microelectronic devices
CN101356629B (zh) 2005-11-09 2012-06-06 高级技术材料公司 用于将其上具有低k介电材料的半导体晶片再循环的组合物和方法
TWI516573B (zh) * 2007-02-06 2016-01-11 安堤格里斯公司 選擇性移除TiSiN之組成物及方法
US20080234162A1 (en) * 2007-03-21 2008-09-25 General Chemical Performance Products Llc Semiconductor etch residue remover and cleansing compositions
US20090029274A1 (en) * 2007-07-25 2009-01-29 3M Innovative Properties Company Method for removing contamination with fluorinated compositions
TW200916571A (en) * 2007-08-02 2009-04-16 Advanced Tech Materials Non-fluoride containing composition for the removal of residue from a microelectronic device
WO2009087492A1 (en) 2008-01-09 2009-07-16 Freescale Semiconductor, Inc. Semiconductor processing method
GB0804055D0 (en) * 2008-03-04 2008-04-09 Univ Nottingham Trent Cleaning method
TWI591158B (zh) * 2008-03-07 2017-07-11 恩特葛瑞斯股份有限公司 非選擇性氧化物蝕刻濕清潔組合物及使用方法
CN201219685Y (zh) * 2008-04-16 2009-04-15 韩广民 组装结构产品及庭院椅
US8961701B2 (en) 2008-09-24 2015-02-24 Lam Research Corporation Method and system of drying a microelectronic topography
US8153533B2 (en) 2008-09-24 2012-04-10 Lam Research Methods and systems for preventing feature collapse during microelectronic topography fabrication
BRPI0920545A2 (pt) 2008-10-09 2015-12-29 Avantor Performance Mat Inc formulações acídicas aquosas para remoção de resíduos corrosívos de óxido de cobre e prevenção de eletrodeposição de cobre
US20100184301A1 (en) * 2009-01-20 2010-07-22 Lam Research Methods for Preventing Precipitation of Etch Byproducts During an Etch Process and/or Subsequent Rinse Process
US9620410B1 (en) 2009-01-20 2017-04-11 Lam Research Corporation Methods for preventing precipitation of etch byproducts during an etch process and/or subsequent rinse process
MX2011008789A (es) * 2009-02-25 2011-09-29 Avantor Performance Mat Inc Composiciones removedoras para limpiar polimero fotosensible implantado ionicamente de obleas de dispositivos semiconductores.
KR101746879B1 (ko) * 2009-07-30 2017-06-14 바스프 에스이 고급 반도체 적용을 위한 이온 주입 후 스트리퍼
KR101627392B1 (ko) * 2009-10-02 2016-06-03 미츠비시 가스 가가쿠 가부시키가이샤 금속 미세 구조체의 패턴 도괴 억제용 처리액 및 이것을 이용한 금속 미세 구조체의 제조 방법
KR20120108984A (ko) * 2009-12-11 2012-10-05 인터내셔널 비지네스 머신즈 코포레이션 마스킹재의 제거 방법
US8128755B2 (en) * 2010-03-03 2012-03-06 L'air Liquide Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Cleaning solvent and cleaning method for metallic compound
WO2011109811A2 (en) * 2010-03-05 2011-09-09 Alta Devices, Inc. Substrate clean solution for copper contamination removal
US20110253171A1 (en) * 2010-04-15 2011-10-20 John Moore Chemical Composition and Methods for Removing Epoxy-Based Photoimageable Coatings Utilized In Microelectronic Fabrication
US9238850B2 (en) 2010-08-20 2016-01-19 Advanced Technology Materials, Inc. Sustainable process for reclaiming precious metals and base metals from e-waste
US20130171828A1 (en) * 2010-09-08 2013-07-04 Mitsubishi Gas Chemical Company , Inc. Processing liquid for suppressing pattern collapse of microstructure, and method for producing microstructure using same
KR101850356B1 (ko) * 2010-09-08 2018-04-20 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 미세 구조체의 패턴 붕괴 억제용 처리액 및 이를 이용한 미세 구조체의 제조 방법
WO2012051380A2 (en) 2010-10-13 2012-04-19 Advanced Technology Materials, Inc. Composition for and method of suppressing titanium nitride corrosion
SG11201407650VA (en) * 2012-05-18 2014-12-30 Entegris Inc Composition and process for stripping photoresist from a surface including titanium nitride
WO2014089196A1 (en) 2012-12-05 2014-06-12 Advanced Technology Materials, Inc. Compositions for cleaning iii-v semiconductor materials and methods of using same
US8853081B2 (en) * 2012-12-27 2014-10-07 Intermolecular, Inc. High dose ion-implanted photoresist removal using organic solvent and transition metal mixtures
SG11201507014RA (en) 2013-03-04 2015-10-29 Advanced Tech Materials Compositions and methods for selectively etching titanium nitride
WO2014197808A1 (en) 2013-06-06 2014-12-11 Advanced Technology Materials, Inc. Compositions and methods for selectively etching titanium nitride
CN105431506A (zh) 2013-07-31 2016-03-23 高级技术材料公司 用于去除金属硬掩模和蚀刻后残余物的具有Cu/W相容性的水性制剂
KR102340516B1 (ko) 2013-08-30 2021-12-21 엔테그리스, 아이엔씨. 티타늄 니트라이드를 선택적으로 에칭하기 위한 조성물 및 방법
SG11201603122XA (en) 2013-10-21 2016-05-30 Fujifilm Electronic Materials Cleaning formulations for removing residues on surfaces
JP6494627B2 (ja) 2013-12-06 2019-04-03 フジフイルム エレクトロニック マテリアルズ ユー.エス.エー., インコーポレイテッド 表面上の残渣を除去するための洗浄用製剤
TWI654340B (zh) 2013-12-16 2019-03-21 美商恩特葛瑞斯股份有限公司 Ni:NiGe:Ge選擇性蝕刻配方及其使用方法
US20160322232A1 (en) 2013-12-20 2016-11-03 Entegris, Inc. Use of non-oxidizing strong acids for the removal of ion-implanted resist
WO2015095664A2 (en) 2013-12-20 2015-06-25 Greene Lyon Group, Inc. Method and apparatus for recovery of noble metals, including recovery of noble metals from plated and/or filled scrap
WO2015103146A1 (en) 2013-12-31 2015-07-09 Advanced Technology Materials, Inc. Formulations to selectively etch silicon and germanium
TWI659098B (zh) 2014-01-29 2019-05-11 美商恩特葛瑞斯股份有限公司 化學機械研磨後配方及其使用方法
KR102156059B1 (ko) * 2014-02-04 2020-09-15 엘지전자 주식회사 태양 전지의 제조 방법
WO2015119925A1 (en) 2014-02-05 2015-08-13 Advanced Technology Materials, Inc. Non-amine post-cmp compositions and method of use
CN105785725A (zh) * 2014-12-23 2016-07-20 安集微电子(上海)有限公司 一种光阻残留物清洗液
CN104614954A (zh) * 2015-01-09 2015-05-13 苏州瑞红电子化学品有限公司 一种去除光刻胶的水系剥离液组合物
CN107922992B (zh) 2015-06-24 2021-03-02 格林里昂集团有限公司 使用包括含有硝酸根离子的流体的酸性流体的贵金属的选择性移出
CN106281789B (zh) * 2016-08-11 2018-10-26 江阴江化微电子材料股份有限公司 一种配线基板干刻后残渣清洗剂
CN106744703A (zh) * 2016-11-16 2017-05-31 太原理工大学 一种焦化硫膏的复合洗提剂及其制备方法
US10510851B2 (en) * 2016-11-29 2019-12-17 Taiwan Semiconductor Manufacturing Company, Ltd. Low resistance contact method and structure
JP7073655B2 (ja) * 2017-09-19 2022-05-24 荒川化学工業株式会社 洗浄剤組成物原液、及び該洗浄剤組成物原液を含む洗浄剤組成物
SG11202008828VA (en) 2018-03-28 2020-10-29 Fujifilm Electronic Materials Usa Inc Cleaning compositions
EP3826982B1 (en) 2018-07-23 2023-11-01 Basf Se Use of a substituted thiazolidine compound as nitrification inhibitor
DK3826983T3 (da) * 2018-07-23 2024-08-05 Basf Se Anvendelse af substituerede 2-thiazoliner som nitrificeringshæmmere
KR101910157B1 (ko) 2018-08-06 2018-10-19 영창케미칼 주식회사 유무기 하이브리드 포토레지스트 공정액 조성물
WO2022070969A1 (ja) * 2020-09-30 2022-04-07 株式会社フジミインコーポレーテッド 酸化ガリウム基板用洗浄剤
US12046511B2 (en) 2021-11-19 2024-07-23 International Business Machines Corporation Selective metal residue and liner cleanse for post-subtractive etch
US20240194540A1 (en) * 2022-12-08 2024-06-13 Applied Materials, Inc. Two step implant to improve line edge roughness and line width roughness
KR20240176690A (ko) * 2023-06-16 2024-12-24 에스케이 주식회사 포토레지스트 세정액 조성물 및 이를 이용한 포토레지스트 패턴의 형성 방법
TWI866765B (zh) * 2023-09-11 2024-12-11 萬能貿易股份有限公司 去光阻劑組合物及應用該光阻形成導線結構之方法

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7205265B2 (en) 1990-11-05 2007-04-17 Ekc Technology, Inc. Cleaning compositions and methods of use thereof
US6149828A (en) 1997-05-05 2000-11-21 Micron Technology, Inc. Supercritical etching compositions and method of using same
US6500605B1 (en) 1997-05-27 2002-12-31 Tokyo Electron Limited Removal of photoresist and residue from substrate using supercritical carbon dioxide process
US6596093B2 (en) 2001-02-15 2003-07-22 Micell Technologies, Inc. Methods for cleaning microelectronic structures with cyclical phase modulation
US6602351B2 (en) 2001-02-15 2003-08-05 Micell Technologies, Inc. Methods for the control of contaminants following carbon dioxide cleaning of microelectronic structures
US6641678B2 (en) 2001-02-15 2003-11-04 Micell Technologies, Inc. Methods for cleaning microelectronic structures with aqueous carbon dioxide systems
US6613157B2 (en) 2001-02-15 2003-09-02 Micell Technologies, Inc. Methods for removing particles from microelectronic structures
US6764551B2 (en) 2001-10-05 2004-07-20 International Business Machines Corporation Process for removing dopant ions from a substrate
US7326673B2 (en) 2001-12-31 2008-02-05 Advanced Technology Materials, Inc. Treatment of semiconductor substrates using long-chain organothiols or long-chain acetates
US7557073B2 (en) 2001-12-31 2009-07-07 Advanced Technology Materials, Inc. Non-fluoride containing supercritical fluid composition for removal of ion-implant photoresist
US6943142B2 (en) * 2002-01-09 2005-09-13 Air Products And Chemicals, Inc. Aqueous stripping and cleaning composition
US6764552B1 (en) 2002-04-18 2004-07-20 Novellus Systems, Inc. Supercritical solutions for cleaning photoresist and post-etch residue from low-k materials
US6669785B2 (en) 2002-05-15 2003-12-30 Micell Technologies, Inc. Methods and compositions for etch cleaning microelectronic substrates in carbon dioxide
US6780475B2 (en) 2002-05-28 2004-08-24 Battelle Memorial Institute Electrostatic deposition of particles generated from rapid expansion of supercritical fluid solutions
US6756084B2 (en) 2002-05-28 2004-06-29 Battelle Memorial Institute Electrostatic deposition of particles generated from rapid expansion of supercritical fluid solutions
US6749902B2 (en) 2002-05-28 2004-06-15 Battelle Memorial Institute Methods for producing films using supercritical fluid
US6905556B1 (en) * 2002-07-23 2005-06-14 Novellus Systems, Inc. Method and apparatus for using surfactants in supercritical fluid processing of wafers
US7223352B2 (en) * 2002-10-31 2007-05-29 Advanced Technology Materials, Inc. Supercritical carbon dioxide/chemical formulation for ashed and unashed aluminum post-etch residue removal
US6943139B2 (en) * 2002-10-31 2005-09-13 Advanced Technology Materials, Inc. Removal of particle contamination on patterned silicon/silicon dioxide using supercritical carbon dioxide/chemical formulations
US7485611B2 (en) 2002-10-31 2009-02-03 Advanced Technology Materials, Inc. Supercritical fluid-based cleaning compositions and methods
US6989358B2 (en) * 2002-10-31 2006-01-24 Advanced Technology Materials, Inc. Supercritical carbon dioxide/chemical formulation for removal of photoresists
US6735978B1 (en) * 2003-02-11 2004-05-18 Advanced Technology Materials, Inc. Treatment of supercritical fluid utilized in semiconductor manufacturing applications
US7119052B2 (en) * 2003-06-24 2006-10-10 Advanced Technology Materials, Inc. Compositions and methods for high-efficiency cleaning/polishing of semiconductor wafers
KR20060121168A (ko) * 2003-12-01 2006-11-28 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 초임계 유체/화학적 제제를 이용한 mems 희생층의제거
US20050118832A1 (en) 2003-12-01 2005-06-02 Korzenski Michael B. Removal of MEMS sacrificial layers using supercritical fluid/chemical formulations
US7553803B2 (en) 2004-03-01 2009-06-30 Advanced Technology Materials, Inc. Enhancement of silicon-containing particulate material removal using supercritical fluid-based compositions
US20050227482A1 (en) 2004-03-24 2005-10-13 Korzenski Michael B Composition useful for removal of bottom anti-reflection coatings from patterned ion-implanted photoresist wafers
US7384871B2 (en) * 2004-07-01 2008-06-10 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing compositions and methods relating thereto

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9230823B1 (en) 2014-08-05 2016-01-05 Chipbond Technology Corporation Method of photoresist strip
CN105321807A (zh) * 2014-08-05 2016-02-10 颀邦科技股份有限公司 光刻胶剥离方法
TWI595332B (zh) * 2014-08-05 2017-08-11 頎邦科技股份有限公司 光阻剝離方法
TWI803551B (zh) * 2017-12-27 2023-06-01 日商東京應化工業股份有限公司 去除基板上之有機系硬化膜之方法,及酸性洗淨液

Also Published As

Publication number Publication date
US20080269096A1 (en) 2008-10-30
WO2006113621A2 (en) 2006-10-26
EP1879704A2 (en) 2008-01-23
JP2008537343A (ja) 2008-09-11
CN101198416A (zh) 2008-06-11
WO2006113621A3 (en) 2007-03-01
US8114220B2 (en) 2012-02-14
KR20070120609A (ko) 2007-12-24

Similar Documents

Publication Publication Date Title
TW200700935A (en) Formulations for cleaning ion-implanted photoresist layers from microelectronic devices
TW200728454A (en) Formulations for removing copper-containing post-etch residue from microelectronic devices
TW200639595A (en) Fluoride liquid cleaners with polar and non-polar solvent mixtures for cleaning low-k-containing microelectronic devices
TW200730621A (en) Oxidizing aqueous cleaner for the removal of post-etch residues
SG169363A1 (en) Low ph post-cmp residue removal composition and method of use
TW200712198A (en) Copper passivating post-chemical mechanical polishing cleaning composition and method of use
WO2012051380A3 (en) Composition for and method of suppressing titanium nitride corrosion
TW200636835A (en) Composition for cleaning semiconductor device and method for cleaning semiconductor device using the same
TW200710205A (en) Dense fluid compositions for removal of hardened photoresist, post-etch residue and/or bottom anti-reflective coating layers
WO2010048139A3 (en) Copper cleaning and protection formulations
WO2008144501A3 (en) New antioxidants for post-cmp cleaning formulations
WO1999060448A8 (en) Silicate-containing alkaline compositions for cleaning microelectronic substrates
AU2001296947A1 (en) Stabilized alkaline compositions for cleaning microelectronic substrates
TW200720862A (en) Metals compatible photoresist and/or sacrificial antireflective coating removal composition
AU2001278890A1 (en) Compositions for cleaning organic and plasma etched residues for semiconductor devices
IL169438A0 (en) Composition for stripping and cleaning and use thereof
TW200718775A (en) Composition and method for removing thick film photoresist
IL187121A (en) Preparations for reducing residues that have been engraved and ash residues of light active substance and light active substance
TW200702944A (en) Compositions for cleaning ion implanted photoresist in front end of line applications
EP1453084A3 (en) Post-etch cleaning treatment
WO2004104697A3 (en) Decontamination of supercritical wafer processing equipment
EP1381656A4 (en) AQUEOUS CLEANING COMPOSITION COMPRISING A COPPER-SPECIFIC CORROSION INHIBITOR FOR THE CLEANING OF INORGANIC RESIDUES LOCATED ON SEMICONDUCTOR SUBSTRATES
SG146575A1 (en) Semiconductor etch residue remover and cleansing compositions
TW200634450A (en) Resist stripper and residue remover for cleaning copper surfaces in semiconductor processing
WO2005008739A3 (en) Micellar technology for post-etch residues