[go: up one dir, main page]

MX2011008789A - Composiciones removedoras para limpiar polimero fotosensible implantado ionicamente de obleas de dispositivos semiconductores. - Google Patents

Composiciones removedoras para limpiar polimero fotosensible implantado ionicamente de obleas de dispositivos semiconductores.

Info

Publication number
MX2011008789A
MX2011008789A MX2011008789A MX2011008789A MX2011008789A MX 2011008789 A MX2011008789 A MX 2011008789A MX 2011008789 A MX2011008789 A MX 2011008789A MX 2011008789 A MX2011008789 A MX 2011008789A MX 2011008789 A MX2011008789 A MX 2011008789A
Authority
MX
Mexico
Prior art keywords
semiconductor device
ion implanted
implanted photoresist
device wafers
stripping compositions
Prior art date
Application number
MX2011008789A
Other languages
English (en)
Inventor
Glenn Westwood
Original Assignee
Avantor Performance Mat Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Avantor Performance Mat Inc filed Critical Avantor Performance Mat Inc
Publication of MX2011008789A publication Critical patent/MX2011008789A/es

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/0005—Other compounding ingredients characterised by their effect
    • C11D3/0073—Anticorrosion compositions
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C11D7/08—Acids
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C11D7/10—Salts
    • C11D7/105—Nitrates; Nitrites
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3218—Alkanolamines or alkanolimines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/36—Organic compounds containing phosphorus
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50—Solvents
    • C11D7/5004—Organic solvents
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50—Solvents
    • C11D7/5004—Organic solvents
    • C11D7/5009—Organic solvents containing phosphorus, sulfur or silicon, e.g. dimethylsulfoxide
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Detergent Compositions (AREA)

Abstract

Una composición para la remoción de polímero fotosensible, implantado iónicamente, de alta dosis de la superficie de un dispositivo semiconductor, la composición que tiene al menos un solvente que tiene un punto de inflamación >65°C, al menos un componente que proporciona un ión de nitronio, y al menos un compuesto inhibidor de corrosión de ácido fosfónico, y el uso de esta composición para remover polímero fotosensible, implantado iónicamente, de alta dosis, de la superficie de un dispositivo semiconductor.
MX2011008789A 2009-02-25 2010-02-18 Composiciones removedoras para limpiar polimero fotosensible implantado ionicamente de obleas de dispositivos semiconductores. MX2011008789A (es)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US15520609P 2009-02-25 2009-02-25
US23280009P 2009-08-11 2009-08-11
PCT/US2010/024529 WO2010099017A2 (en) 2009-02-25 2010-02-18 Stripping compositions for cleaning ion implanted photoresist from semiconductor device wafers

Publications (1)

Publication Number Publication Date
MX2011008789A true MX2011008789A (es) 2011-09-29

Family

ID=42027682

Family Applications (1)

Application Number Title Priority Date Filing Date
MX2011008789A MX2011008789A (es) 2009-02-25 2010-02-18 Composiciones removedoras para limpiar polimero fotosensible implantado ionicamente de obleas de dispositivos semiconductores.

Country Status (14)

Country Link
US (1) US8497233B2 (es)
EP (1) EP2401352B1 (es)
JP (1) JP5622752B2 (es)
KR (1) KR101752924B1 (es)
AU (1) AU2010218275A1 (es)
BR (1) BRPI1008034A2 (es)
CA (1) CA2753435A1 (es)
IL (1) IL214730A0 (es)
MX (1) MX2011008789A (es)
RU (1) RU2011139105A (es)
SG (1) SG173833A1 (es)
TW (1) TWI495965B (es)
WO (1) WO2010099017A2 (es)
ZA (1) ZA201106934B (es)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012129496A (ja) * 2010-11-22 2012-07-05 Tokyo Electron Ltd 液処理方法、その液処理方法を実行させるためのプログラムを記録した記録媒体及び液処理装置
EP2540800A1 (en) * 2011-06-30 2013-01-02 Solvay Sa Process for etching using sulfur compounds
US9678430B2 (en) * 2012-05-18 2017-06-13 Entegris, Inc. Composition and process for stripping photoresist from a surface including titanium nitride
US8853081B2 (en) * 2012-12-27 2014-10-07 Intermolecular, Inc. High dose ion-implanted photoresist removal using organic solvent and transition metal mixtures
US20170125240A1 (en) 2014-03-31 2017-05-04 National Institute Of Advanced Industrial Science And Technology Method for manufacturing semiconductor and method for cleaning wafer substrate
CN104614954A (zh) * 2015-01-09 2015-05-13 苏州瑞红电子化学品有限公司 一种去除光刻胶的水系剥离液组合物
WO2017218147A1 (en) * 2016-06-13 2017-12-21 Avantor Performance Materials, Llc Cleaning compositions for microelectronic substrates containing aluminum
JP6769760B2 (ja) * 2016-07-08 2020-10-14 関東化学株式会社 エッチング液組成物およびエッチング方法

Family Cites Families (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3787239A (en) 1970-09-25 1974-01-22 Allied Chem Chemical strippers and method of using
JPH01189921A (ja) * 1988-01-26 1989-07-31 Mitsubishi Electric Corp レジスト除去装置
JPH01274426A (ja) * 1988-04-26 1989-11-02 Mitsubishi Electric Corp 半導体装置製造のポジレジスト除去方法
JP2924022B2 (ja) * 1989-12-04 1999-07-26 ソニー株式会社 化学増幅型レジスト用のレジスト剥離液、及びレジスト剥離方法
US6492311B2 (en) 1990-11-05 2002-12-10 Ekc Technology, Inc. Ethyenediaminetetraacetic acid or its ammonium salt semiconductor process residue removal composition and process
JPH1055993A (ja) 1996-08-09 1998-02-24 Hitachi Ltd 半導体素子製造用洗浄液及びそれを用いた半導体素子の製造方法
US6030932A (en) 1996-09-06 2000-02-29 Olin Microelectronic Chemicals Cleaning composition and method for removing residues
US5861064A (en) 1997-03-17 1999-01-19 Fsi Int Inc Process for enhanced photoresist removal in conjunction with various methods and chemistries
US6107202A (en) 1998-09-14 2000-08-22 Taiwan Semiconductor Manufacturing Company Passivation photoresist stripping method to eliminate photoresist extrusion after alloy
JP4224652B2 (ja) 1999-03-08 2009-02-18 三菱瓦斯化学株式会社 レジスト剥離液およびそれを用いたレジストの剥離方法
US6599370B2 (en) * 2000-10-16 2003-07-29 Mallinckrodt Inc. Stabilized alkaline compositions for cleaning microelectronic substrates
MY143399A (en) 2001-07-09 2011-05-13 Avantor Performance Mat Inc Microelectronic cleaning compositons containing ammonia-free fluoride salts for selective photoresist stripping and plasma ash residue cleaning
MY131912A (en) 2001-07-09 2007-09-28 Avantor Performance Mat Inc Ammonia-free alkaline microelectronic cleaning compositions with improved substrate compatibility
JP2003129089A (ja) 2001-10-24 2003-05-08 Daikin Ind Ltd 洗浄用組成物
KR20030082767A (ko) 2002-04-18 2003-10-23 주식회사 덕성 수용액에서의 전해질의 전기전도도가 높은 물질을 이용한레지스트 박리액 조성물
AU2003240827A1 (en) * 2002-06-07 2003-12-22 Mallinckrodt Baker Inc. Cleaning compositions for microelectronic substrates
JP4304154B2 (ja) * 2002-06-07 2009-07-29 マリンクロッド・ベイカー・インコーポレイテッド 酸化剤および有機溶媒を含有するマイクロエレクトロニクス洗浄組成物
US7393819B2 (en) 2002-07-08 2008-07-01 Mallinckrodt Baker, Inc. Ammonia-free alkaline microelectronic cleaning compositions with improved substrate compatibility
US20040011386A1 (en) 2002-07-17 2004-01-22 Scp Global Technologies Inc. Composition and method for removing photoresist and/or resist residue using supercritical fluids
WO2004019134A1 (ja) 2002-08-22 2004-03-04 Daikin Industries, Ltd. 剥離液
US7166419B2 (en) 2002-09-26 2007-01-23 Air Products And Chemicals, Inc. Compositions substrate for removing etching residue and use thereof
KR20040098179A (ko) 2003-05-14 2004-11-20 리퀴드테크놀로지(주) 감광성 내식각막의 잔사제거 조성물
EP1692572A2 (en) * 2003-10-29 2006-08-23 Mallinckrodt Baker, Inc. Alkaline, post plasma etch/ash residue removers and photoresist stripping compositions containing metal-halide corrosion inhibitors
JP4326928B2 (ja) 2003-12-09 2009-09-09 株式会社東芝 フォトレジスト残渣除去液組成物及び該組成物を用いる半導体回路素子の製造方法
US20050167284A1 (en) 2004-01-30 2005-08-04 International Business Machines Corporation Electrolytic method for photoresist stripping
US7521406B2 (en) * 2004-02-11 2009-04-21 Mallinckrodt Baker, Inc Microelectronic cleaning composition containing halogen oxygen acids, salts and derivatives thereof
ATE488570T1 (de) * 2004-03-01 2010-12-15 Mallinckrodt Baker Inc Nanoelektronik- und mikroelektronik- reinigungsmittel
US20050227482A1 (en) 2004-03-24 2005-10-13 Korzenski Michael B Composition useful for removal of bottom anti-reflection coatings from patterned ion-implanted photoresist wafers
EP1628336B1 (en) 2004-08-18 2012-01-04 Mitsubishi Gas Chemical Company, Inc. Cleaning liquid and cleaning method
KR20070117624A (ko) * 2005-04-04 2007-12-12 말린크로트 베이커, 인코포레이티드 기판 공정 적용시의 이온 주입 포토레지스트 세척용 조성물
KR101164959B1 (ko) 2005-04-06 2012-07-12 주식회사 동진쎄미켐 반도체 소자용 포토레지스트를 제거하기 위한 박리액 조성물
US20070251551A1 (en) 2005-04-15 2007-11-01 Korzenski Michael B Removal of high-dose ion-implanted photoresist using self-assembled monolayers in solvent systems
US8114220B2 (en) * 2005-04-15 2012-02-14 Advanced Technology Materials, Inc. Formulations for cleaning ion-implanted photoresist layers from microelectronic devices
EP1893355A1 (en) 2005-06-16 2008-03-05 Advanced Technology Materials, Inc. Dense fluid compositions for removal of hardened photoresist, post-etch residue and/or bottom anti-reflective coating layers
JP4731406B2 (ja) * 2006-05-31 2011-07-27 花王株式会社 剥離剤組成物
KR20090076938A (ko) 2006-09-25 2009-07-13 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 웨이퍼 재작업 적용을 위한 포토레지스트의 제거를 위한 조성물 및 방법
JP4642001B2 (ja) * 2006-10-24 2011-03-02 関東化学株式会社 フォトレジスト残渣及びポリマー残渣除去液組成物
US7879783B2 (en) 2007-01-11 2011-02-01 Air Products And Chemicals, Inc. Cleaning composition for semiconductor substrates
WO2009032460A1 (en) * 2007-08-02 2009-03-12 Advanced Technology Materials, Inc. Non-fluoride containing composition for the removal of residue from a microelectronic device
CN101910057A (zh) * 2007-10-29 2010-12-08 Ekc技术公司 稳定的含羟胺溶液和其制备方法
US20100105595A1 (en) * 2008-10-29 2010-04-29 Wai Mun Lee Composition comprising chelating agents containing amidoxime compounds

Also Published As

Publication number Publication date
EP2401352B1 (en) 2013-06-12
JP5622752B2 (ja) 2014-11-12
US8497233B2 (en) 2013-07-30
WO2010099017A2 (en) 2010-09-02
TWI495965B (zh) 2015-08-11
RU2011139105A (ru) 2013-04-10
JP2012518716A (ja) 2012-08-16
US20120028871A1 (en) 2012-02-02
CA2753435A1 (en) 2010-09-02
KR101752924B1 (ko) 2017-07-03
TW201040674A (en) 2010-11-16
SG173833A1 (en) 2011-09-29
BRPI1008034A2 (pt) 2016-03-15
ZA201106934B (en) 2012-05-30
KR20110129431A (ko) 2011-12-01
IL214730A0 (en) 2011-11-30
EP2401352A2 (en) 2012-01-04
AU2010218275A1 (en) 2011-10-20
WO2010099017A3 (en) 2010-10-28

Similar Documents

Publication Publication Date Title
MX2011008789A (es) Composiciones removedoras para limpiar polimero fotosensible implantado ionicamente de obleas de dispositivos semiconductores.
TW200940706A (en) Methods of cleaning semiconductor devices at the back end of line using amidoxime compositions
MY162416A (en) Cleaning formulations and method of using the cleaning formulations
SG10201807214WA (en) Etching solution for selectively removing silicon over silicon-germanium alloy from a silicon-germanium/ silicon stack during manufacture of a semiconductor device
WO2012154498A3 (en) Removal of metal impurities from silicon surfaces for solar cell and semiconductor applications
IL287327A (en) Preparations for removing materials that protect against light from semiconductor substrates
TW200942609A (en) Compositions for removal of metal hard mask etching residues from a semiconductor substrate
SG11201804639QA (en) Composition for etching and method for manufacturing semiconductor device using same
TW200636835A (en) Composition for cleaning semiconductor device and method for cleaning semiconductor device using the same
SG10201907142VA (en) Etching composition
SG143115A1 (en) Formulation for removal of photoresist, etch residue and barc
MY173184A (en) Tin hard mask and etch residue removal
AU2003286584A8 (en) Aqueous phosphoric acid compositions for cleaning semiconductor devices
WO2012097143A3 (en) Formulations for the removal of particles generated by cerium- containing solutions
WO2009135102A3 (en) Low ph mixtures for the removal of high density implanted resist
WO2012174518A3 (en) Compositions and methods for selectively etching silicon nitride
EP2592131A3 (en) Aqueous cerium-containing solution having an extended bath lifetime for removing mask material
MY152051A (en) Multipurpose acidic, organic solvent based microelectronic cleaning composition
PH12014500719B1 (en) Microelectronic substrate cleaning compositions having copper/azole polymer inhibition
DE502007006152D1 (de) Verfahren zur Behandlung einer Halbleiterscheibe
SG10201807213YA (en) Etching solution for selectively removing tantalum nitride over titanium nitride during manufacture of a semiconductor device
SG10201805234YA (en) Use of non-oxidizing strong acids for the removal of ion-implanted resist
MY184912A (en) Compositions for anti pattern collapse treatment comprising gemini additives
TW200710611A (en) Photoresist remover composition for removing modified photoresist of semiconductor device
TWI799476B (zh) 用於從半導體基板及對應製程中移除蝕刻後或灰化後殘餘物之清潔組成物