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WO2012174518A3 - Compositions and methods for selectively etching silicon nitride - Google Patents

Compositions and methods for selectively etching silicon nitride Download PDF

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Publication number
WO2012174518A3
WO2012174518A3 PCT/US2012/042925 US2012042925W WO2012174518A3 WO 2012174518 A3 WO2012174518 A3 WO 2012174518A3 US 2012042925 W US2012042925 W US 2012042925W WO 2012174518 A3 WO2012174518 A3 WO 2012174518A3
Authority
WO
WIPO (PCT)
Prior art keywords
silicon nitride
compositions
methods
selectively etching
etching silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2012/042925
Other languages
French (fr)
Other versions
WO2012174518A2 (en
Inventor
Hsing-Chen WU
Emanuel I. Cooper
Yukichi Koji
Jeffrey A. Barnes
Jieh-Hwa Shyu
Toshiyuki IDA
Yung-Hsin Huang
Heng-Kai Hsu
Wisma HSU
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Technology Materials Inc
Original Assignee
Advanced Technology Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Technology Materials Inc filed Critical Advanced Technology Materials Inc
Publication of WO2012174518A2 publication Critical patent/WO2012174518A2/en
Publication of WO2012174518A3 publication Critical patent/WO2012174518A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)

Abstract

Compositions useful for the selective removal of silicon nitride materials relative to silicon oxide materials from a microelectronic device having same thereon. The removal compositions include at least one alkoxysilane, at least one etchant, at least one oxidizing agent, at least one organic solvent, and water.
PCT/US2012/042925 2011-06-16 2012-06-18 Compositions and methods for selectively etching silicon nitride Ceased WO2012174518A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201161497941P 2011-06-16 2011-06-16
US61/497,941 2011-06-16

Publications (2)

Publication Number Publication Date
WO2012174518A2 WO2012174518A2 (en) 2012-12-20
WO2012174518A3 true WO2012174518A3 (en) 2013-04-25

Family

ID=47357798

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2012/042925 Ceased WO2012174518A2 (en) 2011-06-16 2012-06-18 Compositions and methods for selectively etching silicon nitride

Country Status (2)

Country Link
TW (1) TW201311869A (en)
WO (1) WO2012174518A2 (en)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5933950B2 (en) 2011-09-30 2016-06-15 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド Etching solution for copper or copper alloy
WO2013101907A1 (en) 2011-12-28 2013-07-04 Advanced Technology Materials, Inc. Compositions and methods for selectively etching titanium nitride
KR102105381B1 (en) 2012-02-15 2020-04-29 엔테그리스, 아이엔씨. Post-cmp removal using compositions and method of use
EP2850495A4 (en) 2012-05-18 2016-01-20 Entegris Inc Composition and process for stripping photoresist from a surface including titanium nitride
WO2014089196A1 (en) 2012-12-05 2014-06-12 Advanced Technology Materials, Inc. Compositions for cleaning iii-v semiconductor materials and methods of using same
WO2014138064A1 (en) 2013-03-04 2014-09-12 Advanced Technology Materials, Inc. Compositions and methods for selectively etching titanium nitride
JP6723152B2 (en) 2013-06-06 2020-07-15 インテグリス・インコーポレーテッド Compositions and methods for selectively etching titanium nitride
US10138117B2 (en) 2013-07-31 2018-11-27 Entegris, Inc. Aqueous formulations for removing metal hard mask and post-etch residue with Cu/W compatibility
WO2015031620A1 (en) 2013-08-30 2015-03-05 Advanced Technology Materials, Inc. Compositions and methods for selectively etching titanium nitride
WO2015095175A1 (en) 2013-12-16 2015-06-25 Advanced Technology Materials, Inc. Ni:nige:ge selective etch formulations and method of using same
TWI662379B (en) 2013-12-20 2019-06-11 美商恩特葛瑞斯股份有限公司 Use of non-oxidizing strong acids for the removal of ion-implanted resist
US10475658B2 (en) 2013-12-31 2019-11-12 Entegris, Inc. Formulations to selectively etch silicon and germanium
TWI659098B (en) 2014-01-29 2019-05-11 美商恩特葛瑞斯股份有限公司 Post chemical mechanical polishing formulations and method of use
WO2015119925A1 (en) 2014-02-05 2015-08-13 Advanced Technology Materials, Inc. Non-amine post-cmp compositions and method of use
WO2017091572A1 (en) 2015-11-23 2017-06-01 Entegris, Inc. Composition and process for selectively etching p-doped polysilicon relative to silicon nitride
US10995269B2 (en) * 2016-11-24 2021-05-04 Samsung Electronics Co., Ltd. Etchant composition and method of fabricating integrated circuit device using the same
JP7078616B2 (en) * 2016-12-26 2022-05-31 ソウルブレイン シーオー．， エルティーディー． Etching composition and manufacturing method of semiconductor device using it
US11186771B2 (en) 2017-06-05 2021-11-30 Versum Materials Us, Llc Etching solution for selectively removing silicon nitride during manufacture of a semiconductor device
EP3938465B1 (en) * 2019-03-11 2025-07-09 Versum Materials US, LLC Etching solution and method for selectively removing silicon nitride during manufacture of a semiconductor device
KR102081708B1 (en) * 2019-04-15 2020-02-27 세메스 주식회사 Substrate treating apparatus and substrate treating method
CN111019659B (en) * 2019-12-06 2021-06-08 湖北兴福电子材料有限公司 Selective silicon etching liquid
CN114717559A (en) * 2022-03-03 2022-07-08 深圳市金泉益科技有限公司 Titanium etching solution and application thereof
CN115011350A (en) * 2022-07-05 2022-09-06 上海集成电路材料研究院有限公司 Etching composition, etching method and application

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6162370A (en) * 1998-08-28 2000-12-19 Ashland Inc. Composition and method for selectively etching a silicon nitride film
KR20090030702A (en) * 2007-09-20 2009-03-25 주식회사 하이닉스반도체 Etch Composition for Removing Insulator
WO2009073596A2 (en) * 2007-11-30 2009-06-11 Advanced Technology Materials, Inc. Formulations for cleaning memory device structures
US20100176082A1 (en) * 2006-12-21 2010-07-15 Advanced Technology Materials, Inc. Compositions and methods for the selective removal of silicon nitride

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6162370A (en) * 1998-08-28 2000-12-19 Ashland Inc. Composition and method for selectively etching a silicon nitride film
US20100176082A1 (en) * 2006-12-21 2010-07-15 Advanced Technology Materials, Inc. Compositions and methods for the selective removal of silicon nitride
KR20090030702A (en) * 2007-09-20 2009-03-25 주식회사 하이닉스반도체 Etch Composition for Removing Insulator
WO2009073596A2 (en) * 2007-11-30 2009-06-11 Advanced Technology Materials, Inc. Formulations for cleaning memory device structures

Also Published As

Publication number Publication date
TW201311869A (en) 2013-03-16
WO2012174518A2 (en) 2012-12-20

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