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TW200634170A - Pressure control system in a photovoltaic substrate deposition apparatus - Google Patents

Pressure control system in a photovoltaic substrate deposition apparatus

Info

Publication number
TW200634170A
TW200634170A TW094139518A TW94139518A TW200634170A TW 200634170 A TW200634170 A TW 200634170A TW 094139518 A TW094139518 A TW 094139518A TW 94139518 A TW94139518 A TW 94139518A TW 200634170 A TW200634170 A TW 200634170A
Authority
TW
Taiwan
Prior art keywords
control system
pressure control
deposition apparatus
substrate deposition
photovoltaic substrate
Prior art date
Application number
TW094139518A
Other languages
English (en)
Inventor
John R Tuttle
Original Assignee
Daystar Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Daystar Technologies Inc filed Critical Daystar Technologies Inc
Publication of TW200634170A publication Critical patent/TW200634170A/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/137—Batch treatment of the devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/568—Transferring the substrates through a series of coating stations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/167—Photovoltaic cells having only PN heterojunction potential barriers comprising Group I-III-VI materials, e.g. CdS/CuInSe2 [CIS] heterojunction photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/126—Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Chemical Vapour Deposition (AREA)
TW094139518A 2004-11-10 2005-11-10 Pressure control system in a photovoltaic substrate deposition apparatus TW200634170A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US62684304P 2004-11-10 2004-11-10

Publications (1)

Publication Number Publication Date
TW200634170A true TW200634170A (en) 2006-10-01

Family

ID=36337215

Family Applications (6)

Application Number Title Priority Date Filing Date
TW094139516A TW200635090A (en) 2004-11-10 2005-11-10 Process and photovoltaic device using an alkali-containing layer
TW094139517A TW200703672A (en) 2004-11-10 2005-11-10 Thermal process for creation of an in-situ junction layer in CIGS
TW094139513A TW200633240A (en) 2004-11-10 2005-11-10 Method and apparatus for forming a thin-film solar cell using a continuous process
TW094139514A TW200637022A (en) 2004-11-10 2005-11-10 Pallet based system for forming thin-film solar cells
TW094139518A TW200634170A (en) 2004-11-10 2005-11-10 Pressure control system in a photovoltaic substrate deposition apparatus
TW094139515A TW200633241A (en) 2004-11-10 2005-11-10 Vertical production of photovoltaic devices

Family Applications Before (4)

Application Number Title Priority Date Filing Date
TW094139516A TW200635090A (en) 2004-11-10 2005-11-10 Process and photovoltaic device using an alkali-containing layer
TW094139517A TW200703672A (en) 2004-11-10 2005-11-10 Thermal process for creation of an in-situ junction layer in CIGS
TW094139513A TW200633240A (en) 2004-11-10 2005-11-10 Method and apparatus for forming a thin-film solar cell using a continuous process
TW094139514A TW200637022A (en) 2004-11-10 2005-11-10 Pallet based system for forming thin-film solar cells

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW094139515A TW200633241A (en) 2004-11-10 2005-11-10 Vertical production of photovoltaic devices

Country Status (7)

Country Link
US (2) US7319190B2 (zh)
EP (2) EP1810344A2 (zh)
JP (2) JP2008520103A (zh)
CN (6) CN101080511A (zh)
CA (2) CA2586966A1 (zh)
TW (6) TW200635090A (zh)
WO (2) WO2006053129A2 (zh)

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