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WO2009028560A1 - 半導体材料、それを用いた太陽電池、およびそれらの製造方法 - Google Patents

半導体材料、それを用いた太陽電池、およびそれらの製造方法 Download PDF

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Publication number
WO2009028560A1
WO2009028560A1 PCT/JP2008/065312 JP2008065312W WO2009028560A1 WO 2009028560 A1 WO2009028560 A1 WO 2009028560A1 JP 2008065312 W JP2008065312 W JP 2008065312W WO 2009028560 A1 WO2009028560 A1 WO 2009028560A1
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor material
solar cell
atom
manufacturing
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/065312
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English (en)
French (fr)
Inventor
Takashi Suemasu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Japan Science and Technology Agency
Original Assignee
Japan Science and Technology Agency
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Filing date
Publication date
Application filed by Japan Science and Technology Agency filed Critical Japan Science and Technology Agency
Priority to US12/675,741 priority Critical patent/US8728854B2/en
Publication of WO2009028560A1 publication Critical patent/WO2009028560A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/06—Metal silicides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
    • C01P2002/72—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by d-values or two theta-values, e.g. as X-ray diagram
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Photovoltaic Devices (AREA)
  • Silicon Compounds (AREA)

Abstract

　Ａｓ原子、Ｓｂ原子、Ｂｉ原子およびＮ原子からなる群から選択される少なくとも１種の不純物原子とＢａ原子とＳｉ原子とを反応させる、半導体材料の製造方法、ならびにこの半導体材料を備える太陽電池。
PCT/JP2008/065312 2007-08-30 2008-08-27 半導体材料、それを用いた太陽電池、およびそれらの製造方法 Ceased WO2009028560A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US12/675,741 US8728854B2 (en) 2007-08-30 2008-08-27 Semiconductor material, solar cell using the semiconductor material, and methods for producing the semiconductor material and the solar cell

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-223671 2007-08-30
JP2007223671 2007-08-30

Publications (1)

Publication Number Publication Date
WO2009028560A1 true WO2009028560A1 (ja) 2009-03-05

Family

ID=40387277

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/065312 Ceased WO2009028560A1 (ja) 2007-08-30 2008-08-27 半導体材料、それを用いた太陽電池、およびそれらの製造方法

Country Status (3)

Country Link
US (1) US8728854B2 (ja)
JP (1) JP5110593B2 (ja)
WO (1) WO2009028560A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8502191B2 (en) 2009-05-12 2013-08-06 University Of Tsukuba Semiconductor device, manufacturing method therefor, and solar cell

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5732978B2 (ja) * 2011-03-31 2015-06-10 東ソー株式会社 珪化バリウム多結晶体、その製造方法ならびに珪化バリウムスパッタリングターゲット
JP5979667B2 (ja) * 2012-09-19 2016-08-24 国立研究開発法人物質・材料研究機構 金属ケイ化物形成方法
JP2016000674A (ja) * 2014-06-12 2016-01-07 東ソー株式会社 珪化バリウム系多結晶体及び前記珪化バリウム多結晶体からなるスパッタリングターゲット又は熱電変換素子
JP6478369B2 (ja) * 2014-02-27 2019-03-06 東ソー株式会社 珪化バリウム膜およびその製造方法
TW201536679A (zh) * 2014-02-27 2015-10-01 Tosoh Corp 矽化鋇系塊狀體、膜及其製造方法
JP2016084262A (ja) * 2014-10-28 2016-05-19 東ソー株式会社 珪化バリウム系多結晶体及びその用途
JP6428439B2 (ja) * 2014-04-30 2018-11-28 東ソー株式会社 珪化バリウム系バルク体、珪化バリウム系スパッタリングターゲット及びそれを用いた珪化バリウム系結晶膜の製造方法
JP2016008316A (ja) * 2014-06-23 2016-01-18 国立大学法人名古屋大学 ＭＳｉ２（ＭはＭｇ、Ｃａ、Ｓｒ、Ｂａ、Ｒａから選択される少なくとも１種のアルカリ土類金属）膜の製造方法
JP6534088B2 (ja) * 2014-09-04 2019-06-26 国立大学法人名古屋大学 太陽電池

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JPH05335610A (ja) * 1992-03-03 1993-12-17 Canon Inc 光起電力装置
JPH07288334A (ja) * 1994-04-18 1995-10-31 Nichia Chem Ind Ltd 窒化ガリウム系化合物半導体受光素子
JPH10189924A (ja) * 1996-12-27 1998-07-21 Canon Inc 半導体基材の製造方法、および太陽電池の製造方法
JP2000261025A (ja) * 1999-03-12 2000-09-22 Toyoda Gosei Co Ltd 受光素子
JP2002128591A (ja) * 2000-10-24 2002-05-09 Shin Etsu Handotai Co Ltd シリコン結晶及びシリコン結晶ウエーハ並びにその製造方法
JP2002246622A (ja) * 2001-02-16 2002-08-30 Mitsubishi Heavy Ind Ltd 結晶系シリコン薄膜光起電力素子、その製造方法、及びその評価方法
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JP2005503025A (ja) * 2001-09-06 2005-01-27 ミッシェル シー ニコラウ 直接的熱電エネルギー変換のための素子を製造する方法
JP2005311256A (ja) * 2004-04-26 2005-11-04 Kyocera Corp 光電変換装置およびその製造方法ならびに光発電装置
JP2006344724A (ja) * 2005-06-08 2006-12-21 Sharp Corp 太陽電池および太陽電池の製造方法
JP2008066719A (ja) * 2006-08-10 2008-03-21 Univ Of Tsukuba シリコンベースの高効率太陽電池およびその製造方法

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8502191B2 (en) 2009-05-12 2013-08-06 University Of Tsukuba Semiconductor device, manufacturing method therefor, and solar cell
TWI407575B (zh) * 2009-05-12 2013-09-01 Univ Tsukuba A semiconductor device, a method for manufacturing the same, and a solar battery

Also Published As

Publication number Publication date
JP5110593B2 (ja) 2012-12-26
US20100252097A1 (en) 2010-10-07
JP2009076895A (ja) 2009-04-09
US8728854B2 (en) 2014-05-20

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