[go: up one dir, main page]

WO2008028625A3 - Verfahren zur simultanen dotierung und oxidation von halbleitersubstraten und dessen verwendung - Google Patents

Verfahren zur simultanen dotierung und oxidation von halbleitersubstraten und dessen verwendung Download PDF

Info

Publication number
WO2008028625A3
WO2008028625A3 PCT/EP2007/007703 EP2007007703W WO2008028625A3 WO 2008028625 A3 WO2008028625 A3 WO 2008028625A3 EP 2007007703 W EP2007007703 W EP 2007007703W WO 2008028625 A3 WO2008028625 A3 WO 2008028625A3
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor substrates
simultaneously doping
oxidizing semiconductor
oxidizing
doping
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2007/007703
Other languages
English (en)
French (fr)
Other versions
WO2008028625A2 (de
Inventor
Daniel Biro
Ralf Preu
Jochen Rentsch
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fraunhofer Gesellschaft zur Foerderung der Angewandten Forschung eV
Original Assignee
Fraunhofer Gesellschaft zur Foerderung der Angewandten Forschung eV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fraunhofer Gesellschaft zur Foerderung der Angewandten Forschung eV filed Critical Fraunhofer Gesellschaft zur Foerderung der Angewandten Forschung eV
Priority to JP2009525991A priority Critical patent/JP2010503190A/ja
Priority to US12/439,964 priority patent/US20100136768A1/en
Priority to EP07802115A priority patent/EP2064750A2/de
Publication of WO2008028625A2 publication Critical patent/WO2008028625A2/de
Publication of WO2008028625A3 publication Critical patent/WO2008028625A3/de
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/128—Annealing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)

Abstract

Die Erfindung betrifft ein Verfahren zur simultanen Dotierung und Oxidation von Halbleitersubstraten sowie derart hergestellte dotierte und oxidierte Halbleitersubstrate. Weiterhin betrifft die Erfindung die Verwendung dieses Verfahrens zur Herstellung von Solarzellen.
PCT/EP2007/007703 2006-09-04 2007-09-04 Verfahren zur simultanen dotierung und oxidation von halbleitersubstraten und dessen verwendung Ceased WO2008028625A2 (de)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2009525991A JP2010503190A (ja) 2006-09-04 2007-09-04 半導体基板に対して同時にドーピングおよび酸化を実行する方法および当該方法の利用
US12/439,964 US20100136768A1 (en) 2006-09-04 2007-09-04 Method for simultaneous doping and oxidizing semiconductor substrates and the use thereof
EP07802115A EP2064750A2 (de) 2006-09-04 2007-09-04 Verfahren zur simultanen dotierung und oxidation von halbleitersubstraten und dessen verwendung

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102006041424.1 2006-09-04
DE102006041424A DE102006041424A1 (de) 2006-09-04 2006-09-04 Verfahren zur simultanen Dotierung und Oxidation von Halbleitersubstraten und dessen Verwendung

Publications (2)

Publication Number Publication Date
WO2008028625A2 WO2008028625A2 (de) 2008-03-13
WO2008028625A3 true WO2008028625A3 (de) 2008-05-08

Family

ID=39078879

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2007/007703 Ceased WO2008028625A2 (de) 2006-09-04 2007-09-04 Verfahren zur simultanen dotierung und oxidation von halbleitersubstraten und dessen verwendung

Country Status (5)

Country Link
US (1) US20100136768A1 (de)
EP (1) EP2064750A2 (de)
JP (1) JP2010503190A (de)
DE (1) DE102006041424A1 (de)
WO (1) WO2008028625A2 (de)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008033169A1 (de) * 2008-05-07 2009-11-12 Ersol Solar Energy Ag Verfahren zur Herstellung einer monokristallinen Solarzelle
US8569100B2 (en) * 2008-06-26 2013-10-29 Mitsubishi Electric Corporation Solar cell and manufacturing method thereof
DE102008030725B4 (de) 2008-07-01 2013-10-17 Deutsche Cell Gmbh Verfahren zur Herstellung einer Kontakt-Struktur mittels einer Galvanikmaske
DE102008049281A1 (de) * 2008-09-26 2010-04-08 Centrotherm Photovoltaics Technology Gmbh Diffusionseinrichtung für die Solarzellenfertigung und Verfahren zur Herstellung von Solarzellen
US8124502B2 (en) * 2008-10-23 2012-02-28 Applied Materials, Inc. Semiconductor device manufacturing method, semiconductor device and semiconductor device manufacturing installation
EP2180531A1 (de) * 2008-10-23 2010-04-28 Applied Materials, Inc. Halbleitervorrichtungsherstellungsverfahren, Halbleitervorrichtung und Halbleitervorrichtungsherstellungsanlage
KR20110086833A (ko) * 2008-10-23 2011-08-01 어플라이드 머티어리얼스, 인코포레이티드 반도체 소자 제조 방법, 반도체 소자 및 반도체 소자 제조 설비
DE102009005168A1 (de) * 2009-01-14 2010-07-22 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Solarzelle und Verfahren zur Herstellung einer Solarzelle aus einem Siliziumsubstrat
DE102009003393A1 (de) * 2009-01-27 2010-07-29 Schott Solar Ag Verfahren zur Temperaturbehandlung von Halbleiterbauelementen
CA2759708C (en) * 2009-04-21 2019-06-18 Tetrasun, Inc. High-efficiency solar cell structures and methods of manufacture
EP2422377A4 (de) * 2009-04-22 2013-12-04 Tetrasun Inc Lokalisierte metallkontakte mit lokalisierter laserunterstützter umwandlung von funktionalen folien in solarzellen
US8450141B2 (en) * 2009-06-17 2013-05-28 University Of Delaware Processes for fabricating all-back-contact heterojunction photovoltaic cells
DE102010004498A1 (de) * 2010-01-12 2011-07-14 centrotherm photovoltaics AG, 89143 Verfahren zur Ausbildung einer zweistufigen Dotierung in einem Halbleitersubstrat
WO2011119910A2 (en) 2010-03-26 2011-09-29 Tetrasun, Inc. Shielded electrical contact and doping through a passivating dielectric layer in a high-efficiency crystalline solar cell, including structure and methods of manufacture
WO2011145731A1 (ja) * 2010-05-20 2011-11-24 京セラ株式会社 太陽電池素子およびその製造方法ならびに太陽電池モジュール
KR101150686B1 (ko) 2010-12-17 2012-05-25 현대중공업 주식회사 태양전지 및 그 제조방법
DE102011103538A1 (de) * 2011-06-07 2012-12-13 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Dotierung von Halbleitersubstraten sowie dotiertes Halbleitersubstrat und Verwendung
CN102751379A (zh) * 2012-06-20 2012-10-24 常州天合光能有限公司 一种在n型硅衬底上快速形成p-n结的方法
US10014425B2 (en) * 2012-09-28 2018-07-03 Sunpower Corporation Spacer formation in a solar cell using oxygen ion implantation
US9093598B2 (en) * 2013-04-12 2015-07-28 Btu International, Inc. Method of in-line diffusion for solar cells
US20140361407A1 (en) * 2013-06-05 2014-12-11 SCHMID Group Silicon material substrate doping method, structure and applications
JP6456279B2 (ja) * 2015-01-29 2019-01-23 三菱電機株式会社 太陽電池の製造方法
FR3035741B1 (fr) * 2015-04-28 2018-03-02 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de fabrication d'une cellule photovoltaique.
US9673341B2 (en) 2015-05-08 2017-06-06 Tetrasun, Inc. Photovoltaic devices with fine-line metallization and methods for manufacture
CN107293604A (zh) * 2017-07-27 2017-10-24 浙江晶科能源有限公司 一种p型面低反射率晶硅电池的制备方法
CN114566568A (zh) * 2022-02-28 2022-05-31 安徽华晟新能源科技有限公司 半导体衬底层的处理方法和太阳能电池的制备方法
CN118186578B (zh) * 2024-02-07 2025-06-03 北京怀柔实验室 硅单晶表面无损的铝选区扩散方法及其应用

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4210472A (en) * 1977-12-10 1980-07-01 Itt Industries, Incorporated Manufacturing process of semiconductor devices
US5665175A (en) * 1990-05-30 1997-09-09 Safir; Yakov Bifacial solar cell

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3690969A (en) * 1971-05-03 1972-09-12 Motorola Inc Method of doping semiconductor substrates
GB1536545A (en) * 1975-03-26 1978-12-20 Mullard Ltd Semiconductor device manufacture
US4295266A (en) * 1980-06-30 1981-10-20 Rca Corporation Method of manufacturing bulk CMOS integrated circuits
JP2989373B2 (ja) * 1992-05-08 1999-12-13 シャープ株式会社 光電変換装置の製造方法
US5591681A (en) * 1994-06-03 1997-01-07 Advanced Micro Devices, Inc. Method for achieving a highly reliable oxide film
US6180869B1 (en) * 1997-05-06 2001-01-30 Ebara Solar, Inc. Method and apparatus for self-doping negative and positive electrodes for silicon solar cells and other devices
US6274429B1 (en) * 1997-10-29 2001-08-14 Texas Instruments Incorporated Use of Si-rich oxide film as a chemical potential barrier for controlled oxidation
JPH11354516A (ja) * 1998-06-08 1999-12-24 Sony Corp シリコン酸化膜形成装置及びシリコン酸化膜形成方法
US6221789B1 (en) * 1998-07-29 2001-04-24 Intel Corporation Thin oxides of silicon
US6784121B1 (en) * 1998-10-23 2004-08-31 Texas Instruments Incorporated Integrated circuit dielectric and method
US6204198B1 (en) * 1998-11-24 2001-03-20 Texas Instruments Incorporated Rapid thermal annealing of doped polycrystalline silicon structures formed in a single-wafer cluster tool
JP2002076400A (ja) * 2000-08-30 2002-03-15 Shin Etsu Handotai Co Ltd 太陽電池セルおよび太陽電池セルの製造方法
US7217883B2 (en) * 2001-11-26 2007-05-15 Shell Solar Gmbh Manufacturing a solar cell with backside contacts
JP2004221149A (ja) * 2003-01-10 2004-08-05 Hitachi Ltd 太陽電池の製造方法
JP2005056875A (ja) * 2003-08-01 2005-03-03 Sharp Corp 太陽電池およびその製造方法
JP4761706B2 (ja) * 2003-12-25 2011-08-31 京セラ株式会社 光電変換装置の製造方法
JP4632672B2 (ja) * 2004-02-04 2011-02-16 シャープ株式会社 太陽電池の製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4210472A (en) * 1977-12-10 1980-07-01 Itt Industries, Incorporated Manufacturing process of semiconductor devices
US5665175A (en) * 1990-05-30 1997-09-09 Safir; Yakov Bifacial solar cell

Also Published As

Publication number Publication date
US20100136768A1 (en) 2010-06-03
WO2008028625A2 (de) 2008-03-13
EP2064750A2 (de) 2009-06-03
DE102006041424A1 (de) 2008-03-20
JP2010503190A (ja) 2010-01-28

Similar Documents

Publication Publication Date Title
WO2008028625A3 (de) Verfahren zur simultanen dotierung und oxidation von halbleitersubstraten und dessen verwendung
WO2010093177A3 (en) Solar cell and method for manufacturing the same
WO2010015310A3 (de) Solarzelle und verfahren zur herstellung einer solarzelle
WO2009128679A3 (en) Solar cell, method of forming emitter layer of solar cell, and method of manufacturing solar cell
WO2007121252A3 (en) Tandem photovoltaic cells
WO2007116001A3 (de) Flüssig-kristalline rylentetracarbonsäurederivate und deren verwendung
WO2009119995A3 (en) Method of texturing solar cell and method of manufacturing solar cell
WO2008034638A3 (de) Verfahren zur metallisierung von halbleiterbauelementen und verwendung
WO2010139342A8 (en) Lens and method for manufacturing same
WO2009045293A3 (en) Photovoltaic devices including an interfacial layer
WO2008089043A3 (en) Multi-junction solar cells and methods and apparatuses for forming the same
WO2010023264A3 (en) Thin film solar cell and photovoltaic string assembly
EP1804299B8 (de) Solarzelle und Herstellungsverfahren dafür
WO2008122027A3 (en) Novel electrode
EP2224534A4 (de) Fotosensibilisierte solarzelle, verfahren zur herstellung dieser und fotosensibilisiertes solarzellenmodul
WO2008104301A3 (de) Hybride organische solarzellen mit von photoaktiven oberflächenmodifikatoren umgebenen halbleiter- nanopartikeln
WO2008054858A3 (en) Anionic fuel cells, hybrid fuel cells, and methods of fabrication thereof
WO2009114190A3 (en) Photovoltaic cell module and method of forming same
WO2009055572A3 (en) Semiconductor structure and method of manufacture
WO2006101814A3 (en) Polymer photovoltaic cell
EP2214201A4 (de) Verfahren zur herstellung eines trägers für ein strommodul, träger für strommodul und strommodul
WO2008058119A3 (en) Photovoltaic devices including nitrogen-containing metal contact
WO2009039307A3 (en) Hydrogels and methods for producing and using the same
WO2009060902A1 (ja) セラミックス基板、セラミックス基板の製造方法及びパワーモジュール用基板の製造方法
WO2009108173A3 (en) Methods for formation of substrate elements

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 07802115

Country of ref document: EP

Kind code of ref document: A2

WWE Wipo information: entry into national phase

Ref document number: 2009525991

Country of ref document: JP

WWE Wipo information: entry into national phase

Ref document number: 1460/DELNP/2009

Country of ref document: IN

NENP Non-entry into the national phase

Ref country code: DE

WWE Wipo information: entry into national phase

Ref document number: 2007802115

Country of ref document: EP

WWE Wipo information: entry into national phase

Ref document number: 12439964

Country of ref document: US