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WO2009060902A1 - セラミックス基板、セラミックス基板の製造方法及びパワーモジュール用基板の製造方法 - Google Patents

セラミックス基板、セラミックス基板の製造方法及びパワーモジュール用基板の製造方法 Download PDF

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Publication number
WO2009060902A1
WO2009060902A1 PCT/JP2008/070219 JP2008070219W WO2009060902A1 WO 2009060902 A1 WO2009060902 A1 WO 2009060902A1 JP 2008070219 W JP2008070219 W JP 2008070219W WO 2009060902 A1 WO2009060902 A1 WO 2009060902A1
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WO
WIPO (PCT)
Prior art keywords
producing
substrate
ceramic substrate
power module
ceramic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/070219
Other languages
English (en)
French (fr)
Inventor
Hiroshi Tonomura
Takeshi Kitahara
Hiroya Ishizuka
Yoshirou Kuromitsu
Yoshiyuki Nagatomo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Materials Corp
Original Assignee
Mitsubishi Materials Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2008072509A external-priority patent/JP5176627B2/ja
Priority claimed from JP2008271037A external-priority patent/JP5422964B2/ja
Priority claimed from JP2008271036A external-priority patent/JP5309885B2/ja
Application filed by Mitsubishi Materials Corp filed Critical Mitsubishi Materials Corp
Priority to CN2008801146408A priority Critical patent/CN101849445B/zh
Priority to US12/734,428 priority patent/US20100258233A1/en
Priority to EP08846400.3A priority patent/EP2217043B1/en
Publication of WO2009060902A1 publication Critical patent/WO2009060902A1/ja
Anticipated expiration legal-status Critical
Priority to US13/867,439 priority patent/US9079264B2/en
Ceased legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/20—Preliminary treatment of work or areas to be soldered, e.g. in respect of a galvanic coating
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    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
    • C04B35/584—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on silicon nitride
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    • C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
    • C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
    • C04B37/023—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used
    • C04B37/026—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used consisting of metals or metal salts
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
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    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
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    • H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
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    • H05K3/0011—Working of insulating substrates or insulating layers
    • H05K3/0044—Mechanical working of the substrate, e.g. drilling or punching
    • H05K3/0052—Depaneling, i.e. dividing a panel into circuit boards; Working of the edges of circuit boards
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/49155—Manufacturing circuit on or in base

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Structural Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Ceramic Products (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

　珪素を含有するセラミックス基板であって、同基板の表面における酸化シリコン及びシリコンの複合酸化物の濃度が、２．７Ａｔｏｍ％以下である。
PCT/JP2008/070219 2007-11-06 2008-11-06 セラミックス基板、セラミックス基板の製造方法及びパワーモジュール用基板の製造方法 Ceased WO2009060902A1 (ja)

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CN2008801146408A CN101849445B (zh) 2007-11-06 2008-11-06 陶瓷基板、陶瓷基板的制造方法和电源模块用基板的制造方法
US12/734,428 US20100258233A1 (en) 2007-11-06 2008-11-06 Ceramic substrate, method of manufacturing ceramic substrate, and method of manufacturing power module substrate
EP08846400.3A EP2217043B1 (en) 2007-11-06 2008-11-06 Method for producing a substrate for power module
US13/867,439 US9079264B2 (en) 2007-11-06 2013-04-22 Ceramic substrate, method of manufacturing ceramic substrate, and method of manufacturing power module substrate

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JP2007-288287 2007-11-06
JP2007288287 2007-11-06
JP2008072509A JP5176627B2 (ja) 2008-03-19 2008-03-19 パワーモジュール用基板のセラミックス基板、パワーモジュール用基板のセラミックス基板の製造方法及びパワーモジュール用基板の製造方法
JP2008-072509 2008-03-19
JP2008-271037 2008-10-21
JP2008271037A JP5422964B2 (ja) 2007-11-06 2008-10-21 セラミックス基板の製造方法及びパワーモジュール用基板の製造方法
JP2008271036A JP5309885B2 (ja) 2008-10-21 2008-10-21 パワーモジュール用基板のセラミックス基板の製造方法及びパワーモジュール用基板の製造方法
JP2008-271036 2009-10-21

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US13/867,439 Division US9079264B2 (en) 2007-11-06 2013-04-22 Ceramic substrate, method of manufacturing ceramic substrate, and method of manufacturing power module substrate

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WO2013046675A1 (ja) * 2011-09-28 2013-04-04 富士電機株式会社 電力変換装置
TW201316461A (zh) * 2011-10-05 2013-04-16 Cctled Technology Group 陶瓷基板的加工方法
JP6056446B2 (ja) * 2012-12-17 2017-01-11 三菱マテリアル株式会社 パワーモジュール用基板の製造方法
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JP6079505B2 (ja) * 2013-08-26 2017-02-15 三菱マテリアル株式会社 接合体及びパワーモジュール用基板
JP6550971B2 (ja) * 2014-07-02 2019-07-31 三菱マテリアル株式会社 接合体の製造方法、多層接合体の製造方法、パワーモジュール用基板の製造方法及びヒートシンク付パワーモジュール用基板の製造方法
JP2019009333A (ja) * 2017-06-27 2019-01-17 三菱マテリアル株式会社 セラミックス−金属接合体の製造方法、セラミックス回路基板の製造方法及びセラミックス−金属接合体
JP6911805B2 (ja) * 2018-03-27 2021-07-28 三菱マテリアル株式会社 ヒートシンク付き絶縁回路基板の製造方法
CN108558413B (zh) * 2018-07-02 2021-05-18 上海安费诺永亿通讯电子有限公司 一种陶瓷基电子线路的制备方法
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EP2217043A1 (en) 2010-08-11
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EP2217043B1 (en) 2019-01-30
US20130232783A1 (en) 2013-09-12
CN101849445A (zh) 2010-09-29
EP2217043A4 (en) 2013-10-02
US20100258233A1 (en) 2010-10-14

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