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TW200623240A - Remote chamber methods for removing surface deposits - Google Patents

Remote chamber methods for removing surface deposits

Info

Publication number
TW200623240A
TW200623240A TW094121537A TW94121537A TW200623240A TW 200623240 A TW200623240 A TW 200623240A TW 094121537 A TW094121537 A TW 094121537A TW 94121537 A TW94121537 A TW 94121537A TW 200623240 A TW200623240 A TW 200623240A
Authority
TW
Taiwan
Prior art keywords
surface deposits
removing surface
remote chamber
pretreatment
pathway
Prior art date
Application number
TW094121537A
Other languages
Chinese (zh)
Other versions
TWI284929B (en
Inventor
Herbert Harold Sawin
Bo Bai
Original Assignee
Massachusetts Inst Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Massachusetts Inst Technology filed Critical Massachusetts Inst Technology
Publication of TW200623240A publication Critical patent/TW200623240A/en
Application granted granted Critical
Publication of TWI284929B publication Critical patent/TWI284929B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02C—CAPTURE, STORAGE, SEQUESTRATION OR DISPOSAL OF GREENHOUSE GASES [GHG]
    • Y02C20/00—Capture or disposal of greenhouse gases
    • Y02C20/30—Capture or disposal of greenhouse gases of perfluorocarbons [PFC], hydrofluorocarbons [HFC] or sulfur hexafluoride [SF6]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Computer Hardware Design (AREA)
  • Analytical Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Cleaning In General (AREA)
  • ing And Chemical Polishing (AREA)

Abstract

The present invention relates to an improved remote plasma cleaning method for removing surface deposits from a surface, such as the interior of a deposition chamber that is used in fabricating electronic devices. The improvement involves addition of a nitrogen source to the feeding gas mixture comprising of oxygen and fluorocarbon. The improvement also involves pretreatment of interior surface of the pathway from the remote chamber to the surface deposits by activating a pretreatment gas mixture comprising of nitrogen source and passing the activated pretreatment gas through the pathway.
TW094121537A 2004-03-24 2005-06-28 Remote chamber methods for removing surface deposits TWI284929B (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US55622704P 2004-03-24 2004-03-24
US64083304P 2004-12-30 2004-12-30
US64044404P 2004-12-30 2004-12-30

Publications (2)

Publication Number Publication Date
TW200623240A true TW200623240A (en) 2006-07-01
TWI284929B TWI284929B (en) 2007-08-01

Family

ID=34965582

Family Applications (3)

Application Number Title Priority Date Filing Date
TW094121537A TWI284929B (en) 2004-03-24 2005-06-28 Remote chamber methods for removing surface deposits
TW094121538A TWI281714B (en) 2004-03-24 2005-06-28 Remote chamber methods for removing surface deposits
TW094121536A TWI281715B (en) 2004-03-24 2005-06-28 Remote chamber methods for removing surface deposits

Family Applications After (2)

Application Number Title Priority Date Filing Date
TW094121538A TWI281714B (en) 2004-03-24 2005-06-28 Remote chamber methods for removing surface deposits
TW094121536A TWI281715B (en) 2004-03-24 2005-06-28 Remote chamber methods for removing surface deposits

Country Status (6)

Country Link
EP (3) EP1737998A2 (en)
JP (3) JP2007531289A (en)
KR (3) KR20070043697A (en)
BR (3) BRPI0508214A (en)
TW (3) TWI284929B (en)
WO (3) WO2005095670A2 (en)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0697467A1 (en) * 1994-07-21 1996-02-21 Applied Materials, Inc. Method and apparatus for cleaning a deposition chamber
US7581549B2 (en) 2004-07-23 2009-09-01 Air Products And Chemicals, Inc. Method for removing carbon-containing residues from a substrate
TW200718479A (en) * 2005-08-02 2007-05-16 Massachusetts Inst Technology Method of using sulfur fluoride for removing surface deposits
US9034199B2 (en) 2012-02-21 2015-05-19 Applied Materials, Inc. Ceramic article with reduced surface defect density and process for producing a ceramic article
US9212099B2 (en) 2012-02-22 2015-12-15 Applied Materials, Inc. Heat treated ceramic substrate having ceramic coating and heat treatment for coated ceramics
WO2014094103A1 (en) * 2012-12-18 2014-06-26 Seastar Chemicals Inc. Process and method for in-situ dry cleaning of thin film deposition reactors and thin film layers
JP6202423B2 (en) * 2013-03-05 2017-09-27 パナソニックＩｐマネジメント株式会社 Plasma cleaning method and plasma cleaning apparatus
US9850568B2 (en) 2013-06-20 2017-12-26 Applied Materials, Inc. Plasma erosion resistant rare-earth oxide based thin film coatings
CN106414798B (en) * 2013-12-30 2021-04-06 科慕埃弗西有限公司 Chamber Cleaning and Semiconductor Etching Gases
SG11202106864TA (en) * 2018-12-25 2021-07-29 Showa Denko Kk Adhesion removal method and film-forming method
US11854773B2 (en) 2020-03-31 2023-12-26 Applied Materials, Inc. Remote plasma cleaning of chambers for electronics manufacturing systems
EP3954804A1 (en) * 2020-08-14 2022-02-16 Siltronic AG Device and method for depositing a layer of semiconductor material on a substrate wafer
CN116145106B (en) * 2023-02-21 2024-12-24 苏州鼎芯光电科技有限公司 Cleaning method for semiconductor coating process chamber

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5158644A (en) * 1986-12-19 1992-10-27 Applied Materials, Inc. Reactor chamber self-cleaning process
JP2002280376A (en) * 2001-03-22 2002-09-27 Research Institute Of Innovative Technology For The Earth Cleaning method for CVD apparatus and cleaning apparatus therefor

Also Published As

Publication number Publication date
WO2005090638A9 (en) 2006-01-26
KR20070037434A (en) 2007-04-04
WO2005095670A3 (en) 2006-05-04
JP2007531288A (en) 2007-11-01
KR20070040748A (en) 2007-04-17
BRPI0508204A (en) 2007-07-17
WO2005090638A2 (en) 2005-09-29
EP1733072A2 (en) 2006-12-20
WO2005090638A8 (en) 2006-11-16
TW200623251A (en) 2006-07-01
EP1733071A2 (en) 2006-12-20
BRPI0508205A (en) 2007-07-17
TWI284929B (en) 2007-08-01
WO2005090638A3 (en) 2006-04-13
TW200623281A (en) 2006-07-01
TWI281714B (en) 2007-05-21
EP1737998A2 (en) 2007-01-03
JP2007531289A (en) 2007-11-01
KR20070043697A (en) 2007-04-25
JP2007530792A (en) 2007-11-01
WO2005098086A3 (en) 2006-05-04
BRPI0508214A (en) 2007-07-17
WO2005098086A2 (en) 2005-10-20
TWI281715B (en) 2007-05-21
WO2005095670A2 (en) 2005-10-13

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees